NL1037066C2 - ELECTRIC VIBRATION GENERATION DEVICE, WHICH IS INCLUDED IN A SEMICONDUCTOR INSTALLATION OR A SEMICONDUCTOR INCLUDED THEREIN TRANSFER / TUNNEL SETUP FOR THE INDICATION OF THEM AND THEREFORE SOME STORIES CONCERNED. OR UNDER-TUNNEL BLOCK SECTION OF SUCH A TUNNEL SET-UP THAT THEREFORE MAINTAINED AT LEASTLY DURING OPERATION OF AN AT LEAST LOW-FREQUENT PULSE CONDITION, TYPICALLY A FREQUENTLY CONVENIENT TRACK OF FULL - Google Patents

Description

Electric vibration generating device, which is included in a semiconductor installation or a semiconductor substrate transfer / treatment tunnel arrangement included therein for the purpose of generating and subsequently maintaining such an electrical current in strip-shaped transducers, which are included in the above - and / or sub-tunnel block portion of such a tunnel arrangement that, thereby, at least partly during its operation, continuously maintaining an at least low-frequency pulsing condition, typically an at least high-frequency vibration condition of such transducers.

In this Patent Application an electric vibration generating device is indicated and described, which is included in a semiconductor installation or a semiconductor substrate transfer / treatment tunnel arrangement incorporated therein for the purpose of generating it therein during its operation and subsequently maintaining it continuously of such an electric current in strip-shaped transducers, which are included in the upper and / or sub-tunnel block portion thereof, thereby maintaining, at least partly during their operation, an at least low-frequency pulsing condition of such transducers.

For the electric vibrations generated in such a semiconductor generator, the structures thereof, which are indicated in Figures 1 to 5 and Figures 1.3 and I3A to E of (Dutch Patent Application filed simultaneously by the applicant concerning such transducers and Figures 6 to 12, which originate from a study book on electricity teaching.

Among other things, the following is described and indicated in this textbook on electrical engineering:

Upon the generation of an alternating voltage and alternating current in this electric vibration-generating device, the uninterrupted occurrence of the following:

If an electric winding rotates uniformly during a revolution thereof in a homogeneously generated magnetic field about an axis perpendicular to the field device, Figure 6, 1037066 2, a sinusoidally changing electromotive force (EMK) is generated in that winding.

Thereafter, the same procedure repeats itself with every revolution of this turn and it is said that with every 5 revolutions such an EQC runs through a period.

During the first 1/4 period the EMK increases from 0 to Emaximal »during the second 1/4 period it decreases again from Emaximal to 0, then it becomes negative and decreases after the end of the third 1/4 period to its extreme 10 negative value -Emaximal to then rise to 0 again.

The course of the induced EMC is thereby sinusoidal, Figure 8.

If such a turn is cut and its two ends are connected in the manner indicated in Figure 7 to two slip rings which, when the turn is rotated, rotate along stationary brushes, a sinusoidally changing voltage difference arises between the brushes.

If an external circuit is connected between the brushes, a current will occur which, as further demonstrated, also changes sinusoidally and has the same frequency as the voltage.

The value of such an EMC as the periodically changing variable, which is an electrical voltage or current, varies during one period, typically such a revolution, alternately positive and negative, Figure 8.

In general, however, the length of time in which this quantity is positive is greater than that in which it is negative, typically also having a considerably greater height thereof, as indicated in Figure 9 of this book and hence of this application.

In addition, such periodically changing quantities, which play an important role in electrical engineering, are almost always positive for at least half of such a period and the rest negative.

35 In addition, the medium or effective value of the current determines its power.

The sinusoidally changing alternating current, which arises as a result of the sinusoidally changing alternating voltage, 3 has the same frequency as that of the voltage, but need not be in phase with it.

If the alternating voltage and current are in phase, the power generated is always positive and maximum (E x I).

However, if both this voltage and current change sinusoidally, this generated power also becomes smaller (lower operating power).

It is therefore very important that such a transducer has an optimum power factor.

Such a vibration-generating device, typically comprising a number of such electrical windings adjacent to each other in radial direction and wherein continuous rotation thereof takes place therein, can thus also be considered as an electrical current-generating generator. In the exchange circuit, in which the incorporation of such a strip-shaped transducer arrangement, its dielectric intermediate layer can be considered as a very high electrical resistance.

Considering two points between which such a sinusoidally changing voltage of this generating device and with the prevailing of a circle frequency "v" and a maximum value "Em", the instantaneous value of that voltage is equal to "e" = Emsinus wt.

As is connected to this voltage such a transducer, which contains almost exclusively a resistor "R", as indicated in Figure 10A (then at that time "t" the current "i" is therein according to Ohm's law "i "=! = ^ · | Ίη = f“ sin wt.

It follows that the current through such a transducer 30 also changes sinusoidally, has the same frequency as the voltage and is in phase with it.

The current reaches its maximum value of, if sine wave wt = 1.

F

If we indicate this value with "lm", then Im = -.

R

After division of both members by V2 we find for the p 35 effective value of the current: I = -.

R

Ohm's law therefore also applies to this transducer circuit, which contains almost exclusively resistor and in the same form as with direct current.

4

The vector diagram for this transducer chain is shown in Figure 10®.

In the case of an alternating current circuit, in which such a transducer contains a capacitance, as indicated in FIG.

Thus, alternating charging and discharging currents will flow into the conduit which, when alternating current is applied, will flow through such a capacitance, such as a dielectric substance.

In analogy with Ohm's law, it follows that such a capacity can be regarded as a kind of capacitive resistance or reactance.

With an increasing frequency, the capacitive resistance (reactance) becomes smaller, so that more current will flow in the circuit with the same voltage.

Figure 11® shows the vector diagram for such a circuit with such a capacitive resistor 20 incorporated therein and the current 900 advances at the terminal voltage.

If in such an alternating current circuit an alternative embodiment of the transducer included therein, comprising the combination of the resistor R and the capacitance C, as is indicated in Fig. 12, the total voltage of the electric current from the vector sum of the partial voltages IR and TXC required to flow the current through the combination of this resistor R and this capacitive reactance Xc.

In addition, this first partial voltage, which is connected to this resistor, as an ohmic voltage loss, in phase with I and the second partial voltage, as an ohmic voltage loss lying on this capacitor, is 90® lagging behind I.

In the vector diagram, Figure 12®, the horizontal I vector and the vectors IR and IXC are indicated and assembled to E, with the following formulas: Z = V R2 + Xc2, E = IZ and cos. φ = -.

c Z

5 r

This resistance triangle is indicated in Figure 12.

Furthermore, for such an electrical vibration-generating device, the possible use of electrical devices, which are described in the numerous patents granted in the past with regard to such a device / generator and in a suitable, simple structural construction thereof required for this purpose.

With such a transducer with a low, desired electrical resistance, the dielectric intermediate layer 10 usually consists of paper or a plastic, but any material suitable for this is also possible.

In addition, in connection with the passage of a maximum current through such a transducer for the purpose of co-effecting its vibration through the co-operation therewith, it is desirable to increase the mass of the combination of the strip-shaped, typically metal, surface. and lower electrodes and the intermediate dielectric layer can be minimized, with a typical micrometer height thereof especially for this intermediate layer.

In the patent figures 1 and 13 (Figures 1 and 17 of this transducer application), such a micrometer height is not indicated but can be used.

Such a micrometer height also contributes for the purpose of contributing to an optimum height of this current therethrough thereby thereby also ensuring an optimum heating thereof.

Such a heating is often desirable for at least thereby contributing to the uninterrupted occurrence of evaporation of the typically very low-boiling liquid carrier medium fed into a preceding tunnel section for particles of a semiconductor substance in a liquid or solid form thereof. .

In the accompanying Dutch Patent Application no. 5, such strip-shaped upper and lower transducers included in the semiconductor tunnel arrangement, which function primarily as vibrators, are indicated and described in detail and in which the use of the electrically generated and continuously maintained in these electrical vibration-generating devices 6 vibrations for at least co-occurrence of the following: a) for such a strip-shaped upper transducer, which is incorporated in the upper tunnel block at the location of the central semiconductor treatment part of the tunnel passage in typically an exchangeable upper transducer arrangement, continuously maintaining a desired vibrating condition of the semiconductor treatment medium in the upper slit portion below it above the subsequent semiconductor substrate portions moving continuously in a linear direction underneath it; or b) for such a strip-shaped lower transducer, which is included in the sub-tunnel block at the location of the central semiconductor treatment portion of the tunnel, in typically an interchangeable sub-transducer arrangement, using the electromotive force action of such an electric current generated continuously maintaining the desired vibrating condition of the subsequent semiconductor substrate portions moving continuously above it, and thereby also the semiconductor treatment medium located above it in the upper slit portion; or c) for such a combination of a strip-shaped upper and lower transducer maintaining therewith a combined vibrating condition of the successive, continuously moving substrate portions and therewith also of the semiconductor treatment located in the upper slit portion -medium.

Furthermore, such as this patent application no. 5 concerning the upper and lower transducer arrangements included in this tunnel arrangement simultaneously with this patent application no. 6 has been submitted by the applicant, the constructive structures of these transducer arrangements 35 indicated and described therein as well as the means and methods, such as the generated electrical vibrations in their various forms, can also be applied for the latter application.

Thus, the above need not be specified and described in detail in this application 7, with in this application in addition to this general explanatory initial text concerning such an electric vibration generating device almost exclusively the further need to describe the in this tunnel arrangement therewith realized semiconductor treatments.

In such an electrical oscillation generating device, during operation thereof, continuous maintenance of at least one of the following electrical pulsing or vibrating conditions thereof and therewith of the mechanical pulsing or vibrating conditions of such an upper and lower transducer : a) an approximately equal movement speed during its subsequent up and down movement; B) the combination of a rapid upward and a subsequent slow downward movement thereof; or c) the combination of a slow downward and a subsequent rapid upward movement thereof.

Also the following heights of such realized electrical vibrating conditions: a) a considerable height of the vibrations under a very low-frequency vibrating condition, typically a pulsating condition, Figure 6, or b) a small height of the vibrations under a high-25 frequency vibration condition; Figure 6 ^ or c) an even lower height of these vibrations with a very high-frequency vibration condition, Figure 6 ^ 'or d) an even lower height of these vibrations under an ultra-high required vibration condition, Figure 6 ^.

Furthermore, the following, possibly applicable, electrical vibrations: a) an even, typically long-term upward and downward displacement thereof, Fig. 6, or b) a fast upward and a subsequent typically long-term downward displacement thereof, Fig. 6B or c) a typical long-term upward and subsequent rapid downward displacement thereof, Figure 6 ^.

Thereby with the aid of a combination of such a high vibrating frequency and a large vibrating amplitude of these generated vibrations, which is effected in such an arrangement 8, that it also functions as a heat source, such a typical upper transducer.

Furthermore, the effect therein of the combination of such a high vibrating frequency and such a large vibrating amplitude that it also functions as such a heat source that at least thereby contributing to the occurrence of such a required evaporation -10 process of the continuous continuous low-boiling liquid carrier medium used in this tunnel arrangement of its combination with particles of a semiconductor substance in a solid or liquid form thereof used in this tunnel arrangement.

For the purpose of a total evaporation process therefor, if necessary, with the aid of a strip-shaped electric heating element in the transducer compartment, the possible maintenance of a low-frequency pulsing / vibrating condition of such a transducer under a suitable for this purpose. sufficiently high temperature.

Furthermore, in such an arrangement, the effectuation of such a high vibration frequency in combination with a sufficiently large vibration amplitude of the vibrations applied, that such an additional strip-shaped heat source is not required and therefore the continuous occurrence of such an at least almost total evaporation process.

By using such a strip-shaped upper tranducer with an extremely low, typically micrometer height thereof in combination with such a large vibrating amplitude of the vibrations effected with the aid of this device, and thereby also maintaining a mechanical vibrating condition thereof with a typically nanometer high amplitude of these mechanical vibrations.

In the use of such a strip-shaped sub-transducer arrangement, such a small height thereof in combination with at least partly such a large vibration amplitude of the electric vibrations effected with the aid of such an electric vibration generating device 9 and an extremely small required micrometer height of the successive, continuously moving semiconductor substrate parts, which, with the aid of the typical low-frequency pulsing condition of this generated current, thereby also maintaining such a pulsating condition of these successive, continuously moving semiconductor substrate parts .

It is impossible in the semiconductor treatment modules of the existing semiconductor installations by using such an electric vibration-generating device in combination with a sub-transducer to temporarily maintain a pulsing / vibrating condition of the semiconductor wafer temporarily accommodated therein. at least also the following X5: a) an excessively large mass of the typically substantially round wafer with a typically at least 300 mm diameter thereof in combination with a relatively large height thereof, thereby b) no possible use of a micrometer high film liquid coupling medium between such a wafer and such a transducer; and c) too large a mass of such a likewise round lower transducer. with no possible vibration condition of the wafer.

In addition, such a required round-top transducer is impossible in connection with substantially the following: a) too large a mass of the required round-top transducer; and b) the impossible application of the commonly used devices for the semiconductor treatment and cleaning medium, which are included in the central upper part of the module.

Furthermore, for this combination of such an electric vibration generating device and such a transducer arrangement, the possible use of several of the means and methods of the semiconductor devices, which are described in the Dutch patent filed simultaneously therewith.

Patent applications by the applicant.

Such an electrical vibration generating device and thereby effecting such a semiconductor precipitation process with the aid of such an upper and / or lower transducer can also be used in these other semiconductor devices.

The invention will be explained in more detail below with reference to the electric vibration generating device shown and described in the Figures and this typically in a combination with such an upper and / or lower transducer arrangement.

Figure 1 shows: a typical strip-shaped electric vibration generating device, which is typically included in a semiconductor installation, comprising a semiconductor substrate transfer / treatment tunnel arrangement for the purpose of continuously generating / maintaining an alternating current for electric alternating current during its operation. continuous vibration of a strip-shaped transducer arrangement included in a strip-shaped portion of this tunnel arrangement.

Figure 2 shows a partial cross-section of the tunnel passage at the location of the starting part of this transducer and in which, with the aid of the electric current effected by this device, co-continuous evaporation of the therein from a previous medium-supply device takes place liquid carrier medium supplied for particles of a semiconductor substance.

Figure 3 shows a partial cross-section of the tunnel passage near the rear part of this transducer arrangement and in which, partly with the aid of its vibrating condition effected and maintained by this electric alternating current, the uninterrupted occurrence of precipitation of these particles on the successive, continuously moving semiconductor substrate sections beneath it under the structure of a micrometer-high layer thereof.

Figure 4 shows a partial cross-section of this 11 tunnel passage at the location of a strip-shaped section in the upper tunnel block behind this transducer arrangement for the evaporated liquid carrier medium and wherein with the aid of this electrical alternating current an at least substantially complete precipitation of such particles on the subsequent semiconductor substrate portions while having a micron high layer thereof.

Figure 5 shows an alternative embodiment of the exchangeable transducer block and in which the inclusion of a strip-shaped, thin-walled heating element in the transducer compartment of this block for the purpose of thereby co-maintaining a sufficiently high temperature of such a transducer during its relatively low-frequency vibration.

Figure 6 shows an electric winding which moves in radial direction through such an electric vibration generating device in an electromagnetic field generated therein.

Figure 7 shows a part of a generator and in which such a winding with a supply line is connected to two cylindrical supply and discharge rings for the discharge therethrough of the electric current generated in this generator.

Figure 8 shows for the generator according to Figure 7 the realization of an alternating current with an equal positive and negative part thereof.

Figures 8 show the following heights of their vibrations for such an upper transducer during its operation: a) a considerable height of the vibrations under a very low-frequency vibration condition, typically a pulsing condition, Figure 8 *; or b) a low height of the vibrations under a high-frequency vibration condition, Figure 8; or c) an even lower height of such vibrations, with a very high-free equivalent condition, Fig. 8; or d) an even lower height of such vibrations under an ultra-high-frequency vibration condition, FIG. 8, and with any desired length of these generated electrical vibrations and consequent successive sequencing and transducers also effected in such a transducer. downward movements thereof.

Figures 8 ^> ® and C furthermore show for such an upper transducer, with the aid of such a generated vibration, the continuous occurrence of one of the following conditions of its subsequent vibrating up and down movements: a) an approximately equal speed of these up and down movements, condition 8 ^; or b) the combination of a fast upward and a subsequent slow downward movement, condition 8 ^; or c) the combination of a slow upward and a subsequent fast downward movement, condition 8 ^.

Figure 9 shows for such an electric current generated in this electric vibration generating device a larger positive vibration part than its negative part. Figure 10 shows an alternating current circuit with connection to such an alternating current generator of an electrical resistor incorporated therein.

Figure 10B shows the vector diagram of this circuit, with such a transducer arrangement also typically functioning as such an electrical resistor.

Figure 11A shows an alternating current circuit, with the connection of an electric capacity connected to such a generator.

Figure 11B shows the vector diagram of this chain.

Figure 12 shows an alternating current circuit, with the connection of such a generator to the combination of an electrical resistor and a capacitance, possibly including an alternative transducer.

Figure 12 & shows the vector diagram for this chain.

Figure 13 shows a strip-shaped lower transducer, which is accommodated in a transducer compartment of an interchangeable strip-shaped lower transducer block, for the purpose of maintaining a typical high-frequency vibration condition of the subsequent one during its operation. semiconductor substrate portions moving thereabove and wherein this compartment is typically filled with exclusively gavoidal medium under a sealed condition thereof and with the aid of the subsequent strip-shaped semiconductor treatment medium feed and discharge grooves included in the upper portion of the upper tunnel block from the upper slit section above, the continuous occurrence of a semiconductor treatment 10 under a certain vibrating condition of these successive semiconductor substrate sections moving thereabove, including one of its subsequent vibrating conditions and these substrate sections moving along them above : a) an even up and down movement; or b) a fast upward and a subsequent slow downward movement; or c) a slow upward and a subsequent fast downward displacement.

Figure 1 shows a portion of the semiconductor tunnel rack 10, with the strip-shaped compartment 12 of the upper tunnel block IA at the location of at least the central semiconductor treatment portion thereof accommodating the typically at least high-frequency vibrating transducer 16 with the membrane section 18 around it.

In this block in front of this transducer the recording of the strip-shaped supply groove 20, with its connection to at least one medium supply line 22, for the purpose of a continuous supply of the combination of a low-boiling liquid carrier medium 2A and typically nanometer large particle semiconductor substance 26. '

In this tunnel arrangement, the further continuous movement therethrough of the film 28 with a width 35 thereof, which is substantially equal to that of the tunnel passage 30, as a semiconductor substrate of the subsequent semiconductor substrate portions 32 moving therethrough.

14

In addition, during this tunnel operation, the continuous movement of this combination of carrier medium 24 and particle semiconductor substance 26 through this tunnel passage along this transducer 16, with the heat developed therewith, the occurrence of a gradual and finally typically total evaporation of this carrier medium and the deposition of particles of this substance 26 on these successive semiconductor substrate portions 32, as highly enlarged is shown in Figures 2 and 3, and discharge of the produced vapor 40 via the highly-enlarged strip-shaped indicated in Figure 4 drain groove 34, with connection thereto of at least one drain line 36.

This under the effect of an ultra-flat condition of this micrometer high layer of particles of a semiconductor substance.

Furthermore, an increasing height of this tunnel passage 30 above these precipitated particles 42, as is shown to a great extent in these successive Figures 2, 3 and 4.

Figure 2 shows a partial cross-section of the tunnel passage 30 at the starting part of this transducer 16 and in which the uninterrupted occurrence of evaporation of the liquid carrier medium 24 for these particles 26 of a semiconductor substance under the realization of the vaporous medium 40.

Figure 3 shows a partial cross-section of the tunnel passage 30 near the exit of this transducer arrangement and in which the deposition of these particles 26 on the subsequent semiconductor 30 substrate sections moving underneath them under the construction of a micrometer high layer 42 of them.

Figure 4 shows a partial cross-section of the tunnel passage 30 at the location of the strip-shaped discharge section 34 in the upper tunnel block 14 for the evaporated liquid carrier medium 40 and in which a substantially complete precipitation of these particles 26 of a semiconductor has been effected substance on these successive portions 32 while effecting a micrometer 15 layer 42 thereof

For this transducer 16, the use of any kind of material for its dielectric interlayer 44, which is sufficient to continuously and continuously move the pulsating / vibrating alternating current alternatingly generated in the electrical oscillation generating device 130 from the upper electrode plate 46 to the lower electrode section 48 of this exchangeable transducer block 50, while simultaneously heating it sufficiently that such an evaporation of the low-boiling liquid carrier medium 24 takes place.

Furthermore, any desired height of this intermediate layer 44, such as the low height thereof, which is indicated in this Figure.

In this transducer compartment 12 above the start and end portion of this transducer 16 the mouth of the supply channels 90 and 92 of gaseous medium 94 under a slight overpressure with respect to the pressure of the semiconductor treatment medium in the upper slit portion 72.

Against the bottom wall of this strip-shaped transducer block 14 at the location of this compartment 12 the accommodation of a strip-shaped heat-insulating, typically dielectric layer, against which in a favorable embodiment of this block the adhesion of a strip-shaped thin-walled electrical heating element 96 between these supply channels 90 and 92 for, if necessary, the maintenance of such a high temperature of the gaseous medium 94 in this compartment and, therefore, of this transducer 16, a very low vibrating frequency thereof, with its associated low heat development, and with the help of this additional heat added, such an evaporation process with the liquid carrier medium 24 supplied is ensured.

Fig. 5 shows the alternative embodiment 16 'of this transducer, and between the lower electrode plate 48' thereof and the lower wall of this exchangeable block 50 'there is the anchored dielectric intermediate layer 64, whereby its functioning as a a sufficient degree of electrically insulated transducer 16 '.

In this alternative embodiment, too, the inclusion of such a strip-shaped heating element 96 'against the dielectric upper layer 94', as also the maintenance of such a low-frequency vibration condition of this transducer 16 'under a sufficient high temperature thereof.

With the aid of, among other things, the electric vibration-generating device 130, the operation thereof is continuously interrupted. alternating current 148, typically maintaining, at least in part, the following: a) a vibrating condition of the semiconductor medium 24/26 in the upper, slit portion 72 located below said transducer 16; and b) heating this transducer while contributing at least 20 to the evaporation of the low-boiling liquid carrier medium 24 and precipitation of the semiconductor particles 26.

Figure 6 shows the electric winding 132, which moves in radial direction by maintaining an electromagnetic field in the electric vibration generating device 130 of the semiconductor tunnel arrangement 10, as is shown in detail in Figure 1, among others 134.

Figure 7 shows a portion 136 of an electric generator 138 and wherein such a coil 132 with its electrical supply and discharge lines 140 and 142 thereof is connected to the cylindrical electrical supply and discharge rings 144 and 146 for the purpose of continuous discharge of the electrical current generated therein and with its connection to an electrical device, such as such a transducer arrangement.

Figure 8 shows the realization of the alternating current 148, with an equal positive part 150 and a negative part 152 of such a current.

17

Figures 8 show, for such a transducer, during its operation, one of the following heights of the vibration conditions of the vibrations generated in such a device: a) a considerable height of the vibrations 56 below the sea layer -frequent vibration condition 58, typically a pulsation condition, Figure 8 - * -; or b) a low height of the vibrations 56 'under the high-frequency tri-condition 58', Figure 8, or c) an even lower height of the vibrations 56 '' under the very high-free equivalent condition. 58 '', Figure 8 ^ 1; or d) an even lower height of the vibrations 56 'r' under the ultra high-frequency vibration condition 58 '' ', Figure 8V.

Furthermore, any desired length of these generated electrical vibrations and thereby also of these open downward transducer displacements effected by such a transducer 16.

Figures 8A> B and C further show for such an upper transducer 16 during its operation with the aid of such a vibration 56 generated by this device, the continuous occurrence of one of the following conditions 58 of the subsequent, very low-frequency vibration up and down movements thereof: a) an approximately equal speed of this up and down movement, condition 58A, Figure 8A; or b) the combination of a fast upward and a subsequent slow downward displacement, condition 58B, Figure 8®; or c) the combination of a slow upward and a subsequent fast downward displacement, condition 58 ^ ·, Figure 8 * - ·.

Figure 9 shows for such an alternating current 148 'generated in the device 130 a larger positive portion 150' than its negative portion 152 '.

Fig. 10A shows the alternating current circuit 154, including 35 on such an alternating current generator 138, which may be such a device 130, the connection of an electrical resistor 156, which may be such a transducer.

18

Figure 10® shows the vectot diagram of the circuit 154 according to Figure 10 and wherein for such a transducer arrangement 16 or 102 the intermediate dielectric layer 44 typically has substantially such an electrical resistance 5.

Fig. 11A shows an alternating current circuit with such an alternating current generator 138, which may be such a device 130, the connection of an electric capacitance 158.

Figure 11B shows the vector diagram of the circuit according to Figure 11A and including the inclusion of such a capacity 158.

Figure 12a shows an alternating current circuit, with such an alternating current generator being connected to such an electrical resistor 156 in series with such an electric capacitance 158 and in which an alternate transducer circuit also incorporates such a capacitance.

Figure 12B shows the vector diagram for this chain.

Figure 13 shows the strip-shaped lower-transducer 102, which is included in the transducer compartment 104 of an exchangeable strip-shaped lower-transducer block 106, for thereby maintaining a typical high-frequency vibration condition during its operation. the successive, continuously moving semiconductor substrate portions 32 thereabove and wherein this compartment 104 is filled with typically exclusively gaseous medium 62 under a sealed condition thereof.

Thereby, with the aid of the successive strip-shaped supply and discharge grooves 110 and 112 for semiconductor treatment medium 114 included in the upper part of the upper tunnel block 108, typically a cleaning, stripping, rinsing or etching medium to and from the upper slit portion 116, the occurrence of such a treatment process under a particular vibration condition of these successive semiconductor substrate portions 32 moving therebetween and in which the possible application of its various possible vibration conditions and thereby also the successive, continuously moving substrate sections along it 19: a) an even up and down movement; or bj a rapid upward and a subsequent slow downward displacement; or c) a slow upward and a subsequent fast downward displacement.

Further below this transducer 102 is the incorporation in this compartment 104 of a heat-insulating layer 118.

As an alternative to this layer 118, the attachment of a thin-walled electric heating plate 120 for at least maintaining a certain high temperature therewith of these successive, continuously moving substrate sections along it and supporting certain semiconductor treatment therewith Processes, such as contributing to the evaporation of the applied low-boiling liquid carrier medium.

Here, too, the possible functioning of the transducer compartment 104 as a pressure chamber and in which also the successively very low-frequency supply and removal of the gas-containing medium 62 via the central medium supply / discharge line 60 for the purpose of also being maintained of a low-frequency pulsing condition of such an ultra-thin transducer 102 and thereby of the subsequent semiconductor substrate portions moving thereabove.

Further, for such a transducer 102, any desired height of the dielectric intermediate layer 44.

Also, in such an upper portion of the upper slit portion 116, it is possible for any other type of semiconductor treatment process to take place under any form and height of the electrical vibration effected in the electric vibration generating device.

Locally, such a bottom transducer 102, with which the continuous occurrence of a semiconductor treatment process using electrical pulses / vibrations, are continuously generated and maintained in such a bottom device, with at least a portion thereof located below such a upper transducer 16 for thereby supporting the same semiconductor treatment process with the aid of this upper transducer.

Furthermore, in a favorable embodiment of this tunnel arrangement, such a device 130, in which the generation 5 of an alternating current electric with a certain frequency and its construction, is connected to a plurality of upper transducers 16, which are included in the upper tunnel block and viewed in this respect in the longitudinal direction of this block.

Such a lower device 130 may also be connected to a plurality of lower transducers 102, which are included in the sub-tunnel block.

Furthermore, the indicated Figures of such an electric vibration generating device are also applicable to the simultaneously filed Dutch Patent Applications, in which the use of such a transducer arrangement is included.

It is also possible in such a strip-shaped feeding device 20 to only supply liquid medium, such as cleaning, stripping, etching or rinsing medium.

Also included in an alternative embodiment of such a transducer arrangement, comprising such a combination of at least one strip-shaped top or bottom transducer with typically before such a strip-shaped medium supply device and behind such a strip-shaped medium discharge device, it is included in an interchangeable portion of a semiconductor substrate transfer / treatment tunnel arrangement and also using such an electric vibration generating device.

Such a part is thereby pressure-tightly coupled with the adjacent parts on either side thereof, also interchangeable tunnel sections.

1037066

Claims (82)

What is claimed is: 1. An electrical vibration-generating device which is incorporated in a semiconductor installation for the purpose during its operation of continuously generating and subsequently maintaining an alternating alternating current under an at least low-frequency pulsing and thereby often a vibrating condition thereof and thereby maintaining such a current in the strip-shaped transducers, which are incorporated in a semiconductor substrate transfer / treatment tunnel arrangement thereof for the purpose of thereby continuously maintaining a mechanical up and down pulsing or vibrating condition of such transducers. Device according to Claim 1, characterized in that such a transducer is included as an upper transducer in a strip-shaped part of the upper tunnel block of this tunnel arrangement at the location of the central semiconductor treatment part of the tunnel - passage 20 thereof. 3. Device as claimed in claim 1, characterized in that such a transducer is included as a bottom transducer in a strip-shaped part of the under-tunnel block of this tunnel arrangement at the location of the central semiconductor treatment part of the tunnel passage thereof. 4. Device as claimed in claim 2, characterized in that it is further designed such that it comprises means such that, with the aid of such an upper transducer, at least co-continuous maintenance of a specific vibrating frequency of at least the upper layer of the semiconductor treatment medium in the upper slit portion below it above these successive, continuously moving semiconductor substrate portions below it. 5. Device as claimed in claim 2, characterized in that it is further embodied such and comprises such means that, with the aid of the alternating current produced therein, maintaining an at least approximately equal displacement speed during the subsequent up and down displacement of such an upper transducer. 6. Device as claimed in claim 2, characterized in that it is further embodied such and comprises means such that, with the aid of the alternating current produced therein, maintaining the combination of a rapid upward and a subsequent slow downward displacement of this alternating current generated therein and thereby also the combination of a rapid upward and a subsequent slow downward displacement of such an upper transducer. 7. Device as claimed in claim 2, characterized in that it is further embodied such and comprises such means that, with the aid of such alternating current established therein, maintaining the combination of a slow upward and a subsequent rapid downward displacement of the alternating current and thereby also the combination of a slow upward and a subsequent rapid downward displacement of such an upper transducer. Device as claimed in any of the foregoing Claims 5, 6 or 7, characterized in that it is further embodied and comprises such means that therein the realization of an alternating alternating current with a considerable height of its pulsations / vibrations under a low-frequency condition, including such a significant height of the low-frequency mechanical pulses / vibrations of such an upper transducer. 9. Device as claimed in any of the foregoing Claims 5, 30. or 7, characterized in that it is further designed and comprising such means that therein the processing of an alternating electric current with a small height of its generated vibrations under a high -frequent vibration condition, including a low height of the mechanical vibrations under a high-frequency vibration condition of such an upper transducer. 10. Device as claimed in claim 9, characterized in that it is further designed such that it comprises means such that an even lower height of these elaborate electrical vibrations under a very high-frequency vibration condition thereof and thus also of the mechanical application. and downward vibrations from such an upper transducer. 11. Device as claimed in claim 10, characterized in that it is further embodied such and comprises means such that an even lower height of these electrical vibrations effected therein is provided under an ultra high-frequency vibration condition thereof and thus also of the mechanical up and down vibrations of such an upper transducer. 12. Device as claimed in any of the foregoing Claims 5 to 11, characterized in that it is furthermore designed and comprising such means that therein therein uninterrupted occurrence of a uniform, long-term successive up and downward movement of the therein generated electrical pulses / vibrations and thus also of these up and down mechanical vibrations of such an upper transducer. 13. Device as claimed in any of the foregoing Claims 5 to 11, characterized in that it is further embodied and comprises such means that therein therein uninterrupted occurrence of a rapid upward and a subsequent slow downward movement of these electrical pulses / vibrations generated therein and thus also of these up and down mechanical pulses / vibrations of such an upper transducer. Device as claimed in any of the foregoing Claims 30 to 11, characterized in that it is further embodied and comprises such means that therein therein uninterrupted occurrence of a slow upward and a subsequent rapid downward movement of this electrical pulses / vibrations generated therein and thus also of the up and down mechanical vibrations of such an upper transducer. 15. Device as claimed in any of the foregoing Claims, characterized in that it is furthermore embodied such and comprising means that such a high vibrating frequency in combination with such a large vibrating amplitude of such an electrical vibration generated therein and such thus also of the electrical vibrations in such an upper transducer, that therewith the functioning thereof as a vibrating heat source. 16. Device as claimed in claim 15, characterized in that it is further embodied such and comprising means such that it also functions as a heat source such that at least thereby contributing to the occurrence of a required evaporation process of the continuous carrier fluid used in this tunnel arrangement, typically very low boiling, applied therefrom of its combination with particles of a semiconductor substance in a solid or liquid form thereof, which is supplied in a preceding part of the upper tunnel block. 17. Device as claimed in claim 16, characterized in that it is further designed in such a way and comprising means such that, with the aid of the heat continuously developing by this transducer, a total evaporation process of this typically highly low-boiling liquid carrier medium. 18. Device according to Claims 1.6 and 17, characterized in that therein the application of the medium supply device, which is indicated and described in the accompanying Dutch Patent Application No. 5 of the applicant. 19. Device as claimed in claim 16, characterized in that, as it is designed in such a way and comprising such limited means, that only an insufficient pulsing / vibrating condition of the alternating current generated therein is available for such an at least substantially total evaporation process of this liquid carrier medium, including for this purpose the use of a strip-shaped electric heating element, which is included in the transducer compartment above this transducer in order to effect the required additional heat development. 20. Device as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprises means such that during this tunnel operation the uninterrupted displacement of this combination of liquid carrier medium and particles of a semiconductor substance through the tunnel passage underneath this upper transducer, with the electric current generated continuously with the aid of this device and this, whether or not in combination with the heat development through such an electric heating element, the continuous occurrence of a gradual and finally typically a total evaporation of this carrier medium, thereby depositing the particulate semiconductor substance on the successive, continuously moving substrate sections underneath it while discharging the produced vapor to a strip-shaped discharge section included in the upper tunnel block behind this transducer. 21. Device as claimed in claim 20, characterized in that it is further embodied such and comprises means such that at least in part by such a continuous maintenance of such a vibrating condition of the electric alternating current generated therein and therewith of this above transducer to continuously prevent precipitation of these particles from such a semiconductor substance in a thereby typically solid form against its metal substrate. 22. Device as claimed in claim 20, characterized in that it is further designed such that it comprises means such that, partly with the aid of the electric alternating current generated therein, the vibrating condition of the semiconductor treatment medium in the upper slit portion below this transducer effecting a micrometer-high layer of particles of such a semiconductor substance on these successive, continuous, substrate-moving substrate portions. Device as claimed in claim 22, characterized in that it is further designed such that it comprises means such that at least partly with the aid of the heat generated by this electric alternating current it is already present at the start portion of this transducer in this top gap the uninterrupted occurrence of a substantially complete evaporation of the liquid carrier medium 5 under the effect of vaporous medium and discharge thereof into at least this top gap portion with an increasing height thereof. 24. Device as claimed in claim 23, characterized in that it is further embodied such and comprises means such that near the rear part of this transducer with the aid of the electric alternating current generated by this device the vibrating medium in the lower part thereof located above the slit portion, the uninterrupted occurrence of the build-up of such a micrometer-high layer on these successive substrate portions moving underneath it under a substantially whole deposit of these particles of a semiconductor substance on these successive substrate portions. 25. Device as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprises means such that, thereby, the use therein of such a large vibration amplitude of the electric vibrations generated therein in combination with an extremely small mass of such an upper transducer, the mechanical vibrations produced therein have a typical nanometer large amplitude thereof. 26. Device as claimed in claim 1, characterized in that it is further embodied such and comprising means such that, as in this case, in a strip-shaped lower transducer, which in the sub-tunnel block at the location of the central semiconductor treatment part of the tunnel passage is included, during the operation of this device the continuous maintenance of a desired, at least partly so considerable, magnitude of the electric alternating current generated therein in combination with such a small mass of the successive, continuously moving above this transducer semiconductor substrate portions, that, with the help of this transducer, the continuous maintenance of at least a pulsating condition of these successive, continuously moving semiconductor substrate portions along it. 27. Device as claimed in claim 26, characterized in that it is further embodied such and comprising means such that, during operation thereof, there is uninterrupted maintenance of the combination of a sufficiently low vibration condition of the generated electric alternating current. and this also in combination with such a small total mass of the subsequent substrate portions continuously moving along this transducer, with the aid of maintaining at least a vibration condition of these successive substrate portions. Device as claimed in claim 26 or 27, characterized in that it is further designed such that it comprises means such that, with the aid of these successive pulsating / vibrating substrate sections, a pulsed / vibrating condition of 20 at least the lower layer of the semiconductor treatment medium present in the upper slit portion above. 29. Device as claimed in claim 28, characterized in that it is further embodied such and comprising means such that, as at least locally in this tunnel arrangement, in the upper slit portion above at least the rear portion of this lower transducer there is at least partly a layer of a liquid adhesive substance that is at least nanometer high, with the aid of these successive vibrating substrate portions this layer is also in vibration. 30. Device as claimed in any of the foregoing Claims, characterized in that it is further embodied such and comprises means such that thereby the following alternative heights of such electrical vibration conditions effected therein and thereby also the successive, uninterrupted displacement thereof above it semiconductor substrate portions: a) an even up and down placement; or b) a fast upward and a subsequent slow downward movement; or c) a slow upward and a subsequent fast downward displacement. Device as claimed in any of the foregoing Claims, characterized in that it is further designed such that in this tunnel arrangement its connection to a plurality of sub-transducers, which are included in the sub-tunnel block 10 and viewed in the longitudinal direction of this block. 32. Device as claimed in any of the foregoing Claims, characterized in that it is further embodied such that such a lower transducer, with which the uninterrupted occurrence of a semiconductor treatment process takes place with the aid of electrical pulses / vibrations, which continuously therein be generated and maintained locally with at least a portion thereof under such an upper transducer for thereby supporting such a treatment process with the aid of it. Device as claimed in any of the foregoing Claims, characterized in that it is further embodied such that the connection thereof to a plurality of upper transducers which are included in the upper tunnel block of this tunnel arrangement 25 and viewed in the longitudinal direction of this block. 34. Device as claimed in any of the foregoing Claims, characterized in that it is furthermore designed in such a way that also its connection to a plurality of lower transducers, which are included in the sub-tunnel block. An apparatus according to any one of the preceding claims, characterized in that it is further embodied such that it is interchangeable, such as such a transducer arrangement. 36. Device according to Claim 34, characterized in that it is further designed such that it comprises means such that it can also be used in the other semiconductor tunnel arrangements which are indicated and described in the other Dutch applications submitted simultaneously with this application. Applicant's patent applications. 37. A method of an electrical illumination generating device, which is incorporated in a semiconductor installation / facility, characterized in that, as during the operation thereof, the continuous generation and subsequent maintenance of an alternating current, maintained therein, is maintained therewith. of such an alternating current in the strip-shaped transducers included in a semiconductor substrate transfer / processing tunnel arrangement thereof that thereby the uninterrupted maintenance of mechanical up and down movement of such a transducer takes place. 38. A method according to claim 37, characterized in that, as in such an electrical triggering device, the uninterrupted occurrence of the generation and subsequent maintenance of an electrical current under a pulsed condition thereof, the maintenance thereof with it. an electric alternating current in such a strip-shaped transducer that with it the uninterrupted occurrence of a mechanical up and down pulsing condition of such a transducer. 39. A method according to claim 37, characterized in that, as is the case in such an electrical vibration-generating device 25, the uninterrupted occurrence of the generation and subsequent maintenance of an electrical current under a vibration condition thereof, the maintenance thereof with it. an electric alternating current in such a strip-shaped transducer that with it the uninterrupted occurrence of a mechanical up and down vibrating condition of such a transducer. The method of the apparatus according to Claim 38, characterized in that such a transducer is included as an upper transducer in a strip-shaped portion 35 of the upper tunnel block of this tunnel arrangement at the central semiconductor treatment portion of its tunnel passage, thereby continuously maintaining its mechanical pulsing condition. A method according to Claim 39, characterized in that such a transducer is included as an upper transducer in a strip-shaped portion of the upper tunnel block of this tunnel arrangement at the location of the central semiconductor treatment portion of the tunnel by its running, thereby continuously maintaining a mechanical vibrating condition thereof. Method according to Claim 38, characterized in that such a transducer is included as a bottom transducer in a strip-shaped portion of the sub-tunnel block of this tunnel arrangement at the location of the central semiconductor treatment portion of the tunnel passage thereof, thereby continuously maintaining a pulsating condition thereof. A method according to claim 39, characterized in that such a tranducer is included as a bottom transducer in a strip-shaped portion of the sub-tunnel block of this tunnel arrangement at the central semiconductor treatment portion of the tunnel passage 20, the continuous maintenance of such a vibrating condition thereof. A method according to Claim 40 or 41, characterized in that, with the aid of such an upper transducer, at least co-continuous maintenance of a pulsing or vibrating frequency of at least the upper layer of the semiconductor treatment medium in the upper slit portion below it above these successive, continuously moving semiconductor substrate portions beneath it. 45. A method according to Claim 44, characterized in that, with the aid of the alternating current produced in such a device, maintaining an at least approximately equal speed of movement of the subsequent up and down movements of such an upper transducer. A method according to Claim 40, characterized in that, with the aid of the alternating current produced in such a device, maintaining the combination of a rapid upward and a subsequent slow downward movement of this alternating current generated therein and thereby also the combination of rapid upward and subsequent slow downward displacement of such an upper transducer. 47. A method according to Claim 40, characterized in that, by means of the alternating current produced in such a device, maintaining the combination of a slow upward and a subsequent rapid downward displacement of the alternating current and thereby also the combination of a slow upward and a subsequent rapid downward displacement of such an upper transducer. A method as claimed in any one of the preceding Claims 45, 46 or 47, characterized in that, as in such a device, the realization of an alternating alternating current with a considerable height of its generated pulses under a low-frequency pulsing condition, also such a considerable height of the low-frequency mechanical pulses of such an upper transducer. A method according to any one of the preceding Claims 45, 46 or 47, characterized in that, as in such a device, the realization of an alternating electric current with a small height of its generated vibrations under a high requisite tri-condition at the same time a low height of the mechanical vibrations under such a high-frequency vibration condition of such an upper transducer. 50. A method according to Claim 49, characterized in that, like an even lower height of these electric vibrations effected under a very high-frequency vibration condition thereof, thus maintaining the mechanical up and down vibrations of such an above transducer. A method according to Claim 50, characterized in that, like an even lower height of these electrical vibrations effected therein under an ultra high-frequency vibration condition thereof, thus maintaining mechanical up and down vibrations of such vibrations. an upper transducer. 52. Method as claimed in any of the foregoing Claims, characterized in that, as in such an arrangement, there is also continuous uninterrupted occurrence of a prolonged successive up and downward movement of the electrical pulses / vibrations generated therein, so that this also takes place from these up and down mechanical vibrations of such an upper transducer. 53. A method according to any one of the preceding Claims 44 to 51, characterized in that, as is the case in such a device, the continuous occurrence of a rapid upward and a subsequent slow downward movement of these electrical pulses generated therein / vibrations, which thus also occurs from these up and down mechanical pulses / vibrations from such an upper transducer. 54. A method according to any one of the preceding Claims 44 to 51, characterized in that, as is the case in such a device, the uninterrupted occurrence of a slow upward and subsequent rapid downward displacement of these electrical pulses generated therein / vibrations, which thus also occurs from the up and down mechanical vibrations of such an upper transducer. 55. A method according to any one of the preceding Claims, characterized in that, as is the case in such a device, the realization of such a high vibration frequency in combination with such a large vibration amplitude of such an electric vibration generated therein and thus also of the electrical vibrations in such an upper transducer, which thereby also acts as an electrical resistor, thereby functioning as a vibrating heat-generating device. 56. A method according to claim 55, characterized in that, like such an upper transducer, it also functions as a heat-generating device, thereby contributing at least to the occurrence of a required evaporation process of the equipment used in this tunnel arrangement, continuously moving therebetween, typically very low boiling, liquid carrier medium therefrom of its combination with particles of a semiconductor substance in a solid or liquid form thereof, which is supplied in a preceding part of the upper tunnel block. 57. A method according to Claim 56, characterized in that, with the aid of the heat that is continuously developed by this transducer, a total evaporation process of this typically very low-boiling liquid carrier medium takes place. 58. A method according to Claims 56 and 57, characterized in that for this purpose additionally the use of methods of the medium supply device is indicated and described in the accompanying Netherlands Patent Application No. 5. 5 from the applicant. A method according to Claim 57, characterized in that, as in such a device, there is only the availability of an insufficient pulsing / vibrating condition of the alternating current generated therein for such a substantially total evaporation process of this liquid carrier medium, also for that purpose with a typical strip-shaped electric heating element, which is accommodated in the transducer compartment above such an upper transducer, the realization of the required additional heat generation. 60. A method according to any one of the preceding claims, characterized in that, as during this tunnel operation, the continuous movement of this combination of liquid carrier medium and particles of a semiconductor substance 30 through the tunnel through passage along this upper transducer, the electric current generated continuously with the aid of this device and this, whether or not in combination with the heat generated by such an electric heating element, the continuous occurrence of a gradual and finally typically total evaporation of this carrier medium while depositing the particulate semiconductor substance thereon on the subsequent substrate sections moving continuously underneath it, and this while draining the produced vapor to a strip-shaped medium-discharge section included in the upper tunnel block behind this transducer. 61. The method as claimed in claim 60, characterized in that, at least in part by such a continuous maintenance of such a vibrating condition of the electric alternating current generated in such a device and hence of this upper transducer, the uninterrupted prevention of precipitation of these particles of such a semiconductor substance in a typical solid form against the metal substrate thereof. 62. A method according to Claim 60, characterized in that, also with the aid of the vibrating condition of the semiconductor treatment medium produced in such a device, the establishment of a micrometer high in the upper slit portion below this transducer layer of particles of such a semiconductor substance on these successive, continuously moving semiconductor substrate portions therebetween. 63. A method according to Claim 62, characterized in that, as at least partly with the heat generated by this electric alternating current, already at the location of the starting part of this transducer in this upper slit the uninterrupted occurrence of an at least substantially complete evaporation takes place. of the liquid carrier medium under the creation of vaporous medium, the discharge thereof taking place in at least the upper slit portion below this transducer with an increasing height thereof. A method according to Claim 63, characterized in that near the eight part of this transducer, by means of the electric alternating current generated by this device, effecting such a vibrating combination of media in the upper slit part below that, consequently, the uninterrupted occurrence of the build-up of such a micrometer-high layer on these successive substrate sections moving along underneath it is a substantially complete deposit of these particles of a semiconductor substance on these successive substrate sections moving along it. 65. A method according to any one of the preceding Claims, characterized in that, as therein, the use of. such a large vibration amplitude of the electrical vibrations generated in such a device in combination with an extremely small mass of such an upper transducer, the mechanical vibrations produced therein have a typical nanometer large amplitude thereof. A method according to Claim 42, characterized in that, as in the case of such a strip-shaped lower transducer, which is accommodated in the sub-tunnel block at the location of the central semiconductor treatment part of the tunnel passage, during the operation of this electrical 15, vibration generating device continuously maintaining a desired, at least partly so considerable, magnitude of the electric alternating current generated therein in combination with such a small mass of the subsequent semiconductor substrate portions continuously moving above this transducer, of this transducer the continuous maintenance of at least partly a pulsating condition of these successive, continuously moving substrate sections along it. 67. A method according to Claim 66, characterized in that, with the aid of these successive pulsating substrate portions, thereby also maintaining a pulsating condition of at least the lower layer of the semiconductor treatment present in the upper slit portion above -medium. Method according to Claim 43, characterized in that, as in the case of continuous maintenance of the combination of a sufficiently low vibration condition of the electric alternating current generated in such a device and also in combination with such a small total mass 35 of the successive substrate portions continuously moving along this transducer, with the aid of maintaining at least a vibration condition of these successive substrate portions. 69. A method according to claim 68, characterized in that, with the aid of these successive vibrating substrate portions, thereby also maintaining a vibrating condition of at least the lower layer of the semiconductor treatment present in the upper slit portion above -medium. 70. Method according to Claim 69, characterized in that, as at least locally in this tunnel arrangement in the upper slit portion above at least the rear portion of this lower transducer, there is at least partly an at least nanometer high layer of a liquid adhesive substance, with the aid of these successive vibrating substrate portions, this layer is also in vibration. 71. A method as claimed in any one of the preceding Claims, characterized in that the electrical vibrating conditions effected in such a device and therewith also of the successive continuous substrate parts moving along it have one of the following conditions: a) a uniform up and down movement; or b) a fast upward and a subsequent slow downward movement; or c) a slow upward and a subsequent fast downward displacement. A method according to any one of the preceding claims, characterized in that, as in this tunnel arrangement, the connection of such a device to a plurality of sub-transducers included in the sub-tunnel block and viewed in the longitudinal direction of this block, maintaining a pulsating condition of the successive, continuously moving substrate sections along it, with the aid of the pulsating currents generated therein. 73. A method according to any one of the preceding Claims, characterized in that, as in the case of this tunnel arrangement, the connection of such a device to a plurality of lower transducers, which are incorporated in the lower tunnel block, maintaining vibrations of a vibrating condition of the successive substrate portions moving along these transducers. 74. A method as claimed in any one of the preceding Claims, characterized in that, such as a lower transducer, with which the continuous operation of a semiconductor treatment process takes place with the aid of electrical pulses, which are continuously generated and maintained in such a device, is located locally with at least a portion thereof under such an upper transducer, thereby supporting the same treatment process with the aid of this upper transducer. 5. Method as claimed in any of the foregoing Claims, characterized in that, as such, a lower transducer, with which the uninterrupted occurrence of a semiconductor treatment process takes place in the upper slit above it by means of co-electric vibrations, which continuously in Such a device may be generated and maintained, with at least the major part of it being located beneath such an upper transducer, thereby supporting such a treatment process with the aid of this upper transducer. 76. A method as claimed in any one of the preceding Claims, characterized in that, as there is, the connection of such a device to a plurality of upper transducers, which are incorporated in the upper tunnel block of this tunnel arrangement, thereby taking place the same semiconductor treatment process. also with the help of the electric alternating current produced therein. A method according to Claim 76, characterized in that the use of the combination of liquid carrier medium and particles of a solid semiconductor substance, such as, inter alia, a dielectric substance, for depositing it on the upper layer of the successive substrate portions moving underneath. 78. A method according to claim 76, characterized in that the use of the combination of liquid carrier medium and ion-large particles of a metal substance for the purpose of filling therewith realized nanometer-wide crevices in the upper layer of this substrate. portions or the effect of such an upper layer. 79. A method according to Claim 76, characterized in that the use of a liquid semiconductor substance for the continuous uninterrupted occurrence of a semiconductor treatment process of the top layer of the subsequent substrate sections moving along it, such as others using cleaning, etching, stripping or rinsing medium. 80. A method according to claim 73, characterized in that in the upper slit portions above it, the very low-frequency vibrating successive substrate portions moving thereabove, the continuous occurrence of a semiconductor treatment process using the same semiconductor treatment medium, such as, among others, the mediums mentioned in Claims 77 and 78. 81. A method as claimed in any one of the preceding Claims, characterized in that the use of an exchangeable electrical oscillation generating device in combination with an also exchangeable upper or lower transducer arrangement. 82. A method according to Claims 78, 79 or 80, characterized in that it is also applicable in the other semiconductor tunnel arrangements, with the combination of such an electric vibration generating device 25 and such an above and / or below used. -transducer arrangement, which are indicated and described in the other Dutch Patent applications of the applicant filed simultaneously with this application. 83. A method according to any one of the preceding Claims, characterized in that the application of the methods of the combination of such an electric vibration generating device and such a strip-shaped upper and / or lower transducer, which are described in the simultaneous Dutch Patent Application No. 6 out of 35, regarding such an upper and lower transducer. 1037066