NL103476C - - Google Patents

Info

Publication number
NL103476C
NL103476C NL103476DA NL103476C NL 103476 C NL103476 C NL 103476C NL 103476D A NL103476D A NL 103476DA NL 103476 C NL103476 C NL 103476C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL103476C publication Critical patent/NL103476C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/032—Diffusion length
NL103476D 1955-04-21 NL103476C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL103476 1955-04-21

Publications (1)

Publication Number Publication Date
NL103476C true NL103476C (zh)

Family

ID=32041035

Family Applications (1)

Application Number Title Priority Date Filing Date
NL103476D NL103476C (zh) 1955-04-21

Country Status (5)

Country Link
US (1) US2822310A (zh)
BE (1) BE547227A (zh)
CH (1) CH342295A (zh)
FR (1) FR1153884A (zh)
NL (1) NL103476C (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981645A (en) * 1955-04-22 1961-04-25 Ibm Semiconductor device fabrication
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
BE580254A (zh) * 1958-07-17
NL242787A (zh) * 1958-09-05
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
US4032958A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
JPS5147583B2 (zh) * 1972-12-29 1976-12-15
JPS5147584B2 (zh) * 1972-12-29 1976-12-15
US4007474A (en) * 1972-12-29 1977-02-08 Sony Corporation Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion
AT377645B (de) * 1972-12-29 1985-04-10 Sony Corp Halbleiterbauteil
US4032957A (en) * 1972-12-29 1977-06-28 Sony Corporation Semiconductor device
US4032956A (en) * 1972-12-29 1977-06-28 Sony Corporation Transistor circuit
JPS5754969B2 (zh) * 1974-04-04 1982-11-20
GB1502165A (en) * 1974-04-10 1978-02-22 Sony Corp Semiconductor devices
JPS5753672B2 (zh) * 1974-04-10 1982-11-13
JPS57658B2 (zh) * 1974-04-16 1982-01-07
JPS5714064B2 (zh) * 1974-04-25 1982-03-20
JPS5648983B2 (zh) * 1974-05-10 1981-11-19
JPS5718710B2 (zh) * 1974-05-10 1982-04-17

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2623105A (en) * 1951-09-21 1952-12-23 Bell Telephone Labor Inc Semiconductor translating device having controlled gain
US2697052A (en) * 1953-07-24 1954-12-14 Bell Telephone Labor Inc Fabricating of semiconductor translating devices

Also Published As

Publication number Publication date
FR1153884A (fr) 1958-03-28
US2822310A (en) 1958-02-04
CH342295A (de) 1959-11-15
BE547227A (zh)

Similar Documents

Publication Publication Date Title
AT198143B (zh)
AT194324B (zh)
AT195787B (zh)
AT198671B (zh)
AT195882B (zh)
AT198478B (zh)
AT193805B (zh)
AT195202B (zh)
AT194860B (zh)
AT197696B (zh)
AT196165B (zh)
AT196487B (zh)
AT195329B (zh)
AT195450B (zh)
AT195570B (zh)
AT195613B (zh)
AT195620B (zh)
AT195663B (zh)
AT195705B (zh)
AT194962B (zh)
AT195857B (zh)
AT195858B (zh)
AT194664B (zh)
AT196153B (zh)
AT194311B (zh)