NL1012534A1 - A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems. - Google Patents
A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems.Info
- Publication number
- NL1012534A1 NL1012534A1 NL1012534A NL1012534A NL1012534A1 NL 1012534 A1 NL1012534 A1 NL 1012534A1 NL 1012534 A NL1012534 A NL 1012534A NL 1012534 A NL1012534 A NL 1012534A NL 1012534 A1 NL1012534 A1 NL 1012534A1
- Authority
- NL
- Netherlands
- Prior art keywords
- manufacturing
- well
- layer structure
- sensor systems
- magnetoresistive sensor
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19830343A DE19830343C1 (en) | 1998-07-07 | 1998-07-07 | Artificial antiferromagnetic layer manufacturing method for MR sensor, involves affecting symmetry of antiferromagnetic layer partially by mask to adjust orientation of magnetization of bias layer |
DE19830343 | 1998-07-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL1012534A1 true NL1012534A1 (en) | 2000-01-10 |
NL1012534C2 NL1012534C2 (en) | 2001-03-23 |
Family
ID=7873240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL1012534A NL1012534C2 (en) | 1998-07-07 | 1999-07-07 | A method of manufacturing a layer structure comprising an AAF system as well as magnetoresistive sensor systems. |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000049029A (en) |
DE (1) | DE19830343C1 (en) |
NL (1) | NL1012534C2 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10028640B4 (en) | 2000-06-09 | 2005-11-03 | Institut für Physikalische Hochtechnologie e.V. | Wheatstone bridge, including bridge elements, consisting of a spin valve system, and a method for their production |
JP3498737B2 (en) | 2001-01-24 | 2004-02-16 | ヤマハ株式会社 | Manufacturing method of magnetic sensor |
DE10128963A1 (en) * | 2001-06-15 | 2003-01-02 | Siemens Ag | Magnetoresistive sensor for detecting magnetic field has soft magnetic measurement layer system and artificial antiferromagnetic reference layer system |
DE10128964B4 (en) * | 2001-06-15 | 2012-02-09 | Qimonda Ag | Digital magnetic memory cell device |
US6531723B1 (en) * | 2001-10-16 | 2003-03-11 | Motorola, Inc. | Magnetoresistance random access memory for improved scalability |
DE10214946B4 (en) * | 2002-04-04 | 2006-01-19 | "Stiftung Caesar" (Center Of Advanced European Studies And Research) | TMR sensor |
DE102007026503B4 (en) | 2007-06-05 | 2009-08-27 | Bourns, Inc., Riverside | Process for producing a magnetic layer on a substrate and printable magnetizable paint |
DE102010018874A1 (en) * | 2010-04-30 | 2011-11-03 | Siemens Aktiengesellschaft | Wheatstone bridge with XMR Spinvalve systems |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4243358A1 (en) * | 1992-12-21 | 1994-06-23 | Siemens Ag | Magnetic resistance sensor with artificial antiferromagnet and method for its production |
-
1998
- 1998-07-07 DE DE19830343A patent/DE19830343C1/en not_active Expired - Fee Related
-
1999
- 1999-07-05 JP JP11190424A patent/JP2000049029A/en not_active Withdrawn
- 1999-07-07 NL NL1012534A patent/NL1012534C2/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE19830343C1 (en) | 2000-04-06 |
NL1012534C2 (en) | 2001-03-23 |
JP2000049029A (en) | 2000-02-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AD1A | A request for search or an international type search has been filed | ||
RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20010122 |
|
PD2B | A search report has been drawn up | ||
VD1 | Lapsed due to non-payment of the annual fee |
Effective date: 20040201 |