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Application filed by Univ MalayafiledCriticalUniv Malaya
Priority to MYUI2017704972ApriorityCriticalpatent/MY190179A/en
Publication of MY190179ApublicationCriticalpatent/MY190179A/en
A method of growing semipolar GaN on m-plane sapphire substrate using metalorganic chemical vapor deposition (MOCVD) is described. A suitable m-plane Al2O3 (1- 100) is used as substrate. Nitridation of substrate is performed at growth temperature with gaseous H2 and NH3 flow. After a desired time has elapsed, growth of planar m-plane GaN layer on the substrate is performed with gaseous (Ga(CH3)3), H2 and NH3 flow. Semipolar m- plane GaN (11-22) is grown on the substrate. The surface morphology of semipolar (11-22) GaN has improved as captured by atomic force microscope and scanning electron microscope.
MYUI2017704972A2017-12-212017-12-21Method of growing semipolar gallium nitride film
MY190179A
(en)