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Priority to MYPI2017700703ApriorityCriticalpatent/MY188352A/en
Publication of MY188352ApublicationCriticalpatent/MY188352A/en
A method (150) for metal-assisted hetero-epitaxial growth of a crystalline semiconducting film (115b) on Silicon, Si substrates (120), which provides high- quality epitaxial growth of said semiconductor film (115b) at lower temperatures and reduced defects including microcracks despite a mismatch between thermal expansion co-efficient and lattice constant between a crystalline form of said semiconducting film and crystalline Silicon, comprising a step (151) of etching on a Silicon, Si substrate (120) for synthesizing a plurality of nano-structures (118) on said Silicon, Si substrate (120); a step of depositing an amorphous film of a semiconductor (115a) and depositing a metal film (110) over said plurality of nano- structures (118); and a step of thermal annealing over a temperature range to control alloy fractions to hence provide metal induced hetero-epitaxial growth of a layer of crystalline semiconducting film (115b) on said Silicon, Si substrate (120).
MYPI2017700703A2017-02-282017-02-28Method for hetero-epitaxial growth of semiconductor films on silicon substrates
MY188352A
(en)