MY188352A - Method for hetero-epitaxial growth of semiconductor films on silicon substrates - Google Patents
Method for hetero-epitaxial growth of semiconductor films on silicon substratesInfo
- Publication number
- MY188352A MY188352A MYPI2017700703A MYPI2017700703A MY188352A MY 188352 A MY188352 A MY 188352A MY PI2017700703 A MYPI2017700703 A MY PI2017700703A MY PI2017700703 A MYPI2017700703 A MY PI2017700703A MY 188352 A MY188352 A MY 188352A
- Authority
- MY
- Malaysia
- Prior art keywords
- silicon
- epitaxial growth
- film
- hetero
- crystalline
- Prior art date
Links
Abstract
A method (150) for metal-assisted hetero-epitaxial growth of a crystalline semiconducting film (115b) on Silicon, Si substrates (120), which provides high- quality epitaxial growth of said semiconductor film (115b) at lower temperatures and reduced defects including microcracks despite a mismatch between thermal expansion co-efficient and lattice constant between a crystalline form of said semiconducting film and crystalline Silicon, comprising a step (151) of etching on a Silicon, Si substrate (120) for synthesizing a plurality of nano-structures (118) on said Silicon, Si substrate (120); a step of depositing an amorphous film of a semiconductor (115a) and depositing a metal film (110) over said plurality of nano- structures (118); and a step of thermal annealing over a temperature range to control alloy fractions to hence provide metal induced hetero-epitaxial growth of a layer of crystalline semiconducting film (115b) on said Silicon, Si substrate (120).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2017700703A MY188352A (en) | 2017-02-28 | 2017-02-28 | Method for hetero-epitaxial growth of semiconductor films on silicon substrates |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MYPI2017700703A MY188352A (en) | 2017-02-28 | 2017-02-28 | Method for hetero-epitaxial growth of semiconductor films on silicon substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
MY188352A true MY188352A (en) | 2021-12-02 |
Family
ID=81329924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2017700703A MY188352A (en) | 2017-02-28 | 2017-02-28 | Method for hetero-epitaxial growth of semiconductor films on silicon substrates |
Country Status (1)
Country | Link |
---|---|
MY (1) | MY188352A (en) |
-
2017
- 2017-02-28 MY MYPI2017700703A patent/MY188352A/en unknown
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