MY164426A - A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer - Google Patents

A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer

Info

Publication number
MY164426A
MY164426A MYPI2013004441A MYPI2013004441A MY164426A MY 164426 A MY164426 A MY 164426A MY PI2013004441 A MYPI2013004441 A MY PI2013004441A MY PI2013004441 A MYPI2013004441 A MY PI2013004441A MY 164426 A MY164426 A MY 164426A
Authority
MY
Malaysia
Prior art keywords
solar cell
thin
film solar
absorber layer
fabricating
Prior art date
Application number
MYPI2013004441A
Inventor
S M Mukter-Uz-Zaman A
The Aun Shih Dr
Gunawan Witjaksono Dr
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI2013004441A priority Critical patent/MY164426A/en
Priority to PCT/MY2014/000145 priority patent/WO2015088312A1/en
Publication of MY164426A publication Critical patent/MY164426A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

THE PRESENT INVENTION RELATES TO AN IMPROVED THIN-FILM SOLAR CELL AND A METHOD FOR FABRICATING A THIN-FILM SOLAR CELL HAVING NANOSTRUCTURES INCORPORATED ONTO AN ABSORBER LAYER AND A CONDUCTOR LAYER. ONE OF THE ADVANTAGES OF THE PRESENT INVENTION PROVIDES AN ABSORBER LAYER OF A THIN-FILM SOLAR CELL WITH NANOWIRES HAVING DIFFERENT LENGTH FOR COLLECTING THE SPLIT CHARGES FROM THE ENTIRE PORTION OF THE PHOTOACTIVE ABSORBER LAYER. THE ELECTRODE STRUCTURE ON THE TOP SURFACE OF A THIN-FILM SOLAR CELL COLLECTS AND REMOVES THE ELECTRONS FROM THE CELL WITHOUT BLOCKING THE INCIDENT OF LIGHTS. IN ADDITION, A TRANSPARENT CONDUCTIVE LAYER PROVIDES AN ASSISTANCE TO FLOW OUT ELECTRONS FROM THE SOLAR CELL WITH A MINIMAL LOSS. THE MOST ILLUSTRATIVE DRAWING IS
MYPI2013004441A 2013-12-10 2013-12-10 A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer MY164426A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI2013004441A MY164426A (en) 2013-12-10 2013-12-10 A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer
PCT/MY2014/000145 WO2015088312A1 (en) 2013-12-10 2014-06-03 A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2013004441A MY164426A (en) 2013-12-10 2013-12-10 A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer

Publications (1)

Publication Number Publication Date
MY164426A true MY164426A (en) 2017-12-15

Family

ID=51662271

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013004441A MY164426A (en) 2013-12-10 2013-12-10 A method for fabricating a thin-film solar cell having nanostructures incorporated onto an absorber layer and a conductor layer

Country Status (2)

Country Link
MY (1) MY164426A (en)
WO (1) WO2015088312A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8294025B2 (en) * 2002-06-08 2012-10-23 Solarity, Llc Lateral collection photovoltaics
US8431818B2 (en) * 2007-05-08 2013-04-30 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
CN202839630U (en) * 2009-06-10 2013-03-27 应用材料公司 Carbon nanotube-based solar cells and equipment forming solar cells
WO2012057604A1 (en) * 2010-10-29 2012-05-03 Mimos Berhad Nanostructure-based photovoltaic cell

Also Published As

Publication number Publication date
WO2015088312A1 (en) 2015-06-18

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