MY150458A - Sputtering target with low generation of particles - Google Patents

Sputtering target with low generation of particles

Info

Publication number
MY150458A
MY150458A MYPI20104619A MY150458A MY 150458 A MY150458 A MY 150458A MY PI20104619 A MYPI20104619 A MY PI20104619A MY 150458 A MY150458 A MY 150458A
Authority
MY
Malaysia
Prior art keywords
particles
sputtering target
less
roughness
target
Prior art date
Application number
Inventor
Koide Kei
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY150458A publication Critical patent/MY150458A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PROVIDED IS A SPUTTERING TARGET WITH LOW GENERATION OF PARTICLES HAVING A TARGET SURFACE IN WHICH INTERMETALLIC COMPOUND OXIDES, CARBIDES, CARBONITRIDES AND OTHER SUBSTANCES WITHOUT DUCTILITY EXIST IN A HIGHLY DUCTILE MATRIX PHASE AT A VOLUME RATIO OF 1 TO 50%, WHEREIN A CENTER-LINE AVERAGE SURFACE ROUGHNESS Ra IS 0.1?M OR LESS, A TEN-POINT AVERAGE ROUGHNESS RZ IS 0.4?M OR LESS, A DISTANCE BETWEEN LOCAL PEAKS (ROUGHNESS MOTIF) AR IS 12O?M OR LESS, AND AN AVERAGE LENGTH OF WAVINESS MOTIF AW IS 1500?M OR MORE. PROVIDED ARE A SPUTTERING TARGET WHEREIN THE GENERATION OF NODULES AND PARTICLES UPON SPUTTERING CAN BE PREVENTED OR INHIBITED BY IMPROVING THE TARGET SURFACE, WHICH CONTAINS LARGE AMOUNTS OF SUBSTANCES WITHOUT DUCTILITY; AND A SURFACE PROCESSING METHOD THEREOF.
MYPI20104619 2008-04-03 2009-03-27 Sputtering target with low generation of particles MY150458A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008096806 2008-04-03

Publications (1)

Publication Number Publication Date
MY150458A true MY150458A (en) 2014-01-30

Family

ID=41135433

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20104619 MY150458A (en) 2008-04-03 2009-03-27 Sputtering target with low generation of particles

Country Status (6)

Country Link
US (1) US8936706B2 (en)
JP (1) JP5301531B2 (en)
CN (1) CN101990584B (en)
MY (1) MY150458A (en)
TW (1) TWI447248B (en)
WO (1) WO2009123055A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010101051A1 (en) * 2009-03-03 2010-09-10 日鉱金属株式会社 Sputtering target and process for producing same
MY148731A (en) 2009-08-06 2013-05-31 Jx Nippon Mining & Metals Corp Inorganic-particle-dispersed sputtering target
JP4897113B2 (en) * 2009-12-25 2012-03-14 Ｊｘ日鉱日石金属株式会社 Sputtering target with less generation of particles and method of manufacturing the target
CN102482765B (en) 2010-07-20 2014-03-26 吉坤日矿日石金属株式会社 Sputtering target of ferromagnetic material with low generation of particles
MY157156A (en) 2010-07-20 2016-05-13 Jx Nippon Mining & Metals Corp Sputtering target of ferromagnetic material with low generation of particles
WO2012029498A1 (en) 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Fe-pt-type ferromagnetic material sputtering target
DE102010042828A1 (en) * 2010-10-22 2012-04-26 Walter Ag Target for arc process
TWI623634B (en) 2011-11-08 2018-05-11 塔沙Ｓｍｄ公司 Cerium sputtering target with special surface treatment and good particle performance and manufacturing method thereof
WO2013125296A1 (en) 2012-02-23 2013-08-29 Jx日鉱日石金属株式会社 Ferromagnetic material sputtering target containing chrome oxide
SG11201404067PA (en) 2012-06-18 2014-10-30 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording film
SG11201404072YA (en) 2012-07-20 2014-10-30 Jx Nippon Mining & Metals Corp Sputtering target for forming magnetic recording film and process for producing same
CN106574359B (en) 2014-07-03 2018-11-09 住友金属矿山株式会社 Target material for sputtering and manufacturing method thereof
CN108203806B (en) * 2016-12-20 2020-04-28 宁波江丰电子材料股份有限公司 Method for manufacturing nickel target material

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US4895592A (en) * 1987-12-14 1990-01-23 Eastman Kodak Company High purity sputtering target material and method for preparing high purity sputtering target materials
JPH03257158A (en) 1990-03-07 1991-11-15 Toshiba Corp Sputtering target
AU8629491A (en) * 1990-08-30 1992-03-30 Materials Research Corporation Pretextured cathode sputtering target and method of preparation thereof and sputtering therewith
JP2794382B2 (en) * 1993-05-07 1998-09-03 株式会社ジャパンエナジー Silicide target for sputtering and method for producing the same
US5630918A (en) * 1994-06-13 1997-05-20 Tosoh Corporation ITO sputtering target
JP3152108B2 (en) * 1994-06-13 2001-04-03 東ソー株式会社 ITO sputtering target
US6033620A (en) * 1995-04-18 2000-03-07 Tosoh Corporation Process of preparing high-density sintered ITO compact and sputtering target
JP3867328B2 (en) * 1996-12-04 2007-01-10 ソニー株式会社 Sputtering target and manufacturing method thereof
JP3755559B2 (en) * 1997-04-15 2006-03-15 株式会社日鉱マテリアルズ Sputtering target
US6599377B2 (en) * 1999-10-01 2003-07-29 Heraeus, Inc. Wrought processing of brittle target alloy for sputtering applications
JP4761605B2 (en) * 2000-05-09 2011-08-31 株式会社東芝 Sputtering target
JP2002069623A (en) 2000-08-30 2002-03-08 Hitachi Metals Ltd Co-Cr-Pt-B BASED TARGET AND MAGNETIC RECORDING MEDIUM
JP2002208125A (en) 2001-01-05 2002-07-26 Hitachi Metals Ltd Co-Cr-Pt BASED TARGET MATERIAL AND MAGNETIC RECORDING MEDIUM
JP4827033B2 (en) * 2004-03-01 2011-11-30 Ｊｘ日鉱日石金属株式会社 Sputtering target with less surface defects and surface processing method thereof
WO2005093124A1 (en) * 2004-03-26 2005-10-06 Nippon Mining & Metals Co., Ltd. Co-Cr-Pt-B BASED ALLOY SPUTTERING TARGET
JP4826066B2 (en) * 2004-04-27 2011-11-30 住友金属鉱山株式会社 Amorphous transparent conductive thin film and method for producing the same, and sputtering target for obtaining the amorphous transparent conductive thin film and method for producing the same
JP2006176808A (en) 2004-12-21 2006-07-06 Mitsubishi Materials Corp Manufacturing method of CoCrPt-SiO2 sputtering target for magnetic recording film formation
JP4553136B2 (en) 2005-07-29 2010-09-29 三菱マテリアル株式会社 Sputtering target for forming magnetic recording film with less generation of particles
WO2007080781A1 (en) * 2006-01-13 2007-07-19 Nippon Mining & Metals Co., Ltd. Nonmagnetic material particle dispersed ferromagnetic material sputtering target
CN101981224B (en) * 2008-03-28 2012-08-22 Jx日矿日石金属株式会社 Sputtering target of nonmagnetic-in-ferromagnetic dispersion type material
WO2010101051A1 (en) * 2009-03-03 2010-09-10 日鉱金属株式会社 Sputtering target and process for producing same
JP4673448B2 (en) * 2009-03-27 2011-04-20 Ｊｘ日鉱日石金属株式会社 Non-magnetic particle dispersed ferromagnetic sputtering target
MY148731A (en) * 2009-08-06 2013-05-31 Jx Nippon Mining & Metals Corp Inorganic-particle-dispersed sputtering target
MY149640A (en) * 2009-12-11 2013-09-13 Jx Nippon Mining & Metals Corp Sputtering target comprising oxide phase dispersed in co or co alloy phase, magnetic thin film made of co or co alloy phase and oxide phase, and magnetic recording medium using the said thin film
JP4897113B2 (en) * 2009-12-25 2012-03-14 Ｊｘ日鉱日石金属株式会社 Sputtering target with less generation of particles and method of manufacturing the target

Also Published As

Publication number Publication date
JPWO2009123055A1 (en) 2011-07-28
TWI447248B (en) 2014-08-01
JP5301531B2 (en) 2013-09-25
TW200948998A (en) 2009-12-01
CN101990584A (en) 2011-03-23
WO2009123055A1 (en) 2009-10-08
CN101990584B (en) 2013-05-08
US20110048935A1 (en) 2011-03-03
US8936706B2 (en) 2015-01-20

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