MY134043A - Substrate for epitaxy - Google Patents
Substrate for epitaxyInfo
- Publication number
- MY134043A MY134043A MYPI20023999A MY134043A MY 134043 A MY134043 A MY 134043A MY PI20023999 A MYPI20023999 A MY PI20023999A MY 134043 A MY134043 A MY 134043A
- Authority
- MY
- Malaysia
- Prior art keywords
- nitride
- gallium
- mono
- crystal
- bulk
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
THE INVENTION RELATES TO A SUBSTRATE FOR EPITAXY, ESPECIALLY FOR PREPARATION OF NITRIDE SEMICONDUCTOR LAYERS. INVENTION COVERS A BULK NITRIDE MONO-CRYSTAL CHARACTERIZED IN THAT IT IS A MONO-CRYSTAL OF GALLIUM NITRIDE AND ITS CROSS-SECTION IN A PLANE PERPENDICULAR TO C-AXIS OF HEXAGONAL LATTICE OF GALLIUM NITRIDE HAS A SURFACE AREA GREATER THAN 100 MM², IT IS MORE THAN 1, 0 µm THICK AND ITS C-PLANE SURFACE DISLOCATION DENSITY IS LESS THAN 10 6/CM², WHILE ITS VOLUME IS SUFFICIENT TO PRODUCE AT LEAST ONE FURTHER-PROCESSABLE NON-POLAR A-PLANE OR M-PLANE PLATE HAVING A SURFACE AREA AT LEAST 100 MM². MORE GENERALLY, THE PRESENT INVENTION COVERS A BULK NITRIDE MONO-CRYSTAL WHICH IS CHARACTERIZED IN THAT IT IS A MONO-CRYSTAL OF GALLIUM-CONTAINING NITRIDE AND ITS CROSS-SECTION IN A PLANE PERPENDICULAR TO C-AXIS OF HEXAGONAL LATTICE OF GALLIUM-CONTAINING NITRIDE HAS A SURFACE AREA GREATER THAN 100 MM², IT IS MORE THAN 1, 0 µm THICK AND ITS SURFACE DISCOLATION DENSITY IS LESS THAN 10 6/CM².MONO-CRYSTAL ACCORDING TO THE PRESENT INVENTION ARE SUITABLE FOR EPITAXIAL GROWTH OF NITRIDE SEMICONDUCTOR LAYERS. DUE TO THEIR GOOD CRYSTALLINE QUALITY THEY ARE SUITABLE FOR USE IN OPTO-ELECTRONICS FOR MANUFACTURING OPTO-ELECTRONIC SEMICONDUCTOR DEVICES BASED ON NITRIDES, IN PARTICULAR FOR MANUFACTURING SEMICONDUCTOR LASER DIODES AND LASER DEVICES.THE A.M. BULK MONO-CRYSTALS OF GALLIUM-CONTAINING NITRIDE ARE CRYSTALLIZED ON SEED CRYSTALS. VARIOUS SEED CRYSTALS MAY BE USED. THE BULK MONO-CRYSTALS OF GALLIUM-CONTAINING NITRIDE ARE CRYSTALLIZED BY A METHOD INVOLVING DISSOLUTION OF A GALLIUM-CONTAINING FEEDSTOCK IN A SUPERCRITICAL SOLVENT AND CRYSTALLIZATION OF A GALLIUM NITRIDE ON A SURFACE OF SEED CRYSTAL, AT TEMPERATURE HIGHER AND/OR PRESSURE LOWER THAN IN THE DISSOLUTION PROCESS.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PL35473901 | 2001-06-26 | ||
PL35037501A PL350375A1 (en) | 2001-10-26 | 2001-10-26 | Epitaxial layer substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
MY134043A true MY134043A (en) | 2007-11-30 |
Family
ID=47290485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI20023999 MY134043A (en) | 2001-06-26 | 2002-10-25 | Substrate for epitaxy |
Country Status (1)
Country | Link |
---|---|
MY (1) | MY134043A (en) |
-
2002
- 2002-10-25 MY MYPI20023999 patent/MY134043A/en unknown
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