MY134043A - Substrate for epitaxy - Google Patents

Substrate for epitaxy

Info

Publication number
MY134043A
MY134043A MYPI20023999A MY134043A MY 134043 A MY134043 A MY 134043A MY PI20023999 A MYPI20023999 A MY PI20023999A MY 134043 A MY134043 A MY 134043A
Authority
MY
Malaysia
Prior art keywords
nitride
gallium
mono
crystal
bulk
Prior art date
Application number
Inventor
Robert Dwilinski
Roman Doradzinski
Jerzy Garczynski
Leszek P Sierzputowski
Yasuo Kanbara
Original Assignee
Ammono Sp Zoo
Nichia Coporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PL35037501A external-priority patent/PL350375A1/en
Application filed by Ammono Sp Zoo, Nichia Coporation filed Critical Ammono Sp Zoo
Publication of MY134043A publication Critical patent/MY134043A/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

THE INVENTION RELATES TO A SUBSTRATE FOR EPITAXY, ESPECIALLY FOR PREPARATION OF NITRIDE SEMICONDUCTOR LAYERS. INVENTION COVERS A BULK NITRIDE MONO-CRYSTAL CHARACTERIZED IN THAT IT IS A MONO-CRYSTAL OF GALLIUM NITRIDE AND ITS CROSS-SECTION IN A PLANE PERPENDICULAR TO C-AXIS OF HEXAGONAL LATTICE OF GALLIUM NITRIDE HAS A SURFACE AREA GREATER THAN 100 MM², IT IS MORE THAN 1, 0 µm THICK AND ITS C-PLANE SURFACE DISLOCATION DENSITY IS LESS THAN 10 6/CM², WHILE ITS VOLUME IS SUFFICIENT TO PRODUCE AT LEAST ONE FURTHER-PROCESSABLE NON-POLAR A-PLANE OR M-PLANE PLATE HAVING A SURFACE AREA AT LEAST 100 MM². MORE GENERALLY, THE PRESENT INVENTION COVERS A BULK NITRIDE MONO-CRYSTAL WHICH IS CHARACTERIZED IN THAT IT IS A MONO-CRYSTAL OF GALLIUM-CONTAINING NITRIDE AND ITS CROSS-SECTION IN A PLANE PERPENDICULAR TO C-AXIS OF HEXAGONAL LATTICE OF GALLIUM-CONTAINING NITRIDE HAS A SURFACE AREA GREATER THAN 100 MM², IT IS MORE THAN 1, 0 µm THICK AND ITS SURFACE DISCOLATION DENSITY IS LESS THAN 10 6/CM².MONO-CRYSTAL ACCORDING TO THE PRESENT INVENTION ARE SUITABLE FOR EPITAXIAL GROWTH OF NITRIDE SEMICONDUCTOR LAYERS. DUE TO THEIR GOOD CRYSTALLINE QUALITY THEY ARE SUITABLE FOR USE IN OPTO-ELECTRONICS FOR MANUFACTURING OPTO-ELECTRONIC SEMICONDUCTOR DEVICES BASED ON NITRIDES, IN PARTICULAR FOR MANUFACTURING SEMICONDUCTOR LASER DIODES AND LASER DEVICES.THE A.M. BULK MONO-CRYSTALS OF GALLIUM-CONTAINING NITRIDE ARE CRYSTALLIZED ON SEED CRYSTALS. VARIOUS SEED CRYSTALS MAY BE USED. THE BULK MONO-CRYSTALS OF GALLIUM-CONTAINING NITRIDE ARE CRYSTALLIZED BY A METHOD INVOLVING DISSOLUTION OF A GALLIUM-CONTAINING FEEDSTOCK IN A SUPERCRITICAL SOLVENT AND CRYSTALLIZATION OF A GALLIUM NITRIDE ON A SURFACE OF SEED CRYSTAL, AT TEMPERATURE HIGHER AND/OR PRESSURE LOWER THAN IN THE DISSOLUTION PROCESS.
MYPI20023999 2001-06-26 2002-10-25 Substrate for epitaxy MY134043A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PL35473901 2001-06-26
PL35037501A PL350375A1 (en) 2001-10-26 2001-10-26 Epitaxial layer substrate

Publications (1)

Publication Number Publication Date
MY134043A true MY134043A (en) 2007-11-30

Family

ID=47290485

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20023999 MY134043A (en) 2001-06-26 2002-10-25 Substrate for epitaxy

Country Status (1)

Country Link
MY (1) MY134043A (en)

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