Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telcordia Tech IncfiledCriticalTelcordia Tech Inc
Priority to MYPI9700046priorityCriticalpatent/MY116398A/en
Publication of MY116398ApublicationCriticalpatent/MY116398A/en
A FERROELECTRIC CAPACITOR STRUCTURE AND ITS METHOD OF MAKING IN WHICH A FERROELECTRIC STACK OF TWO, METAL-OXIDE ELECTRODES (46,52) SANDWICHING A FERROELECTRIC LAYER (50) IS FABRICATED ON A SILICON SUBSTRATE (22) WITH AN INTERVENING BARRIER LAYER (42), PREFERABLY OF TIN, IN ONE EMBODIMENT, A PLATINUM LAYER (44) IS GROWN BETWEEN THE TIN AND THE LOWER METAL-OXIDE ELECTRODE AT A SUFFICIENTLY HIGH TEMPERATURE THAT PROVIDES CRYSTALLOGRAPHICALLY ORDERED GROWTH OF THE FERROELECTRIC STACK, IN ANOTHER EMBODIMENT, THE PLATINUM LAYER WAS COMPLETELY ELIMINATED WITH THE LOWER ELECTRODE (46) BEING GROWN DIRECTLY ON THE TIN (42), ALTHOUGH THE CONVENTIONAL CONDUCTIVE METAL-OXIDE USED IN THE ELECTRODE IS LANTHANUM STRONTIUM COBALT (LSCO), LANTHANUM NICKEL OXIDE PROVIDES GOOD ELECTRICAL AND LIFETIME CHARACTERISTICS IN A FERROELECTRIC CELL. ALTERNATIVELY, THE ELECTRODES CAN BE FORMED OF THE ROCK-SALT METAL OXIDES, SUCH AS NEODYMIUM OXIDE (NDO).
MYPI97000461997-01-071997-01-07Electrode structure for ferroelectric capacitor integrated on silicon
MY116398A
(en)