MY110504A - A method and apparatus for treating a surface. - Google Patents

A method and apparatus for treating a surface.

Info

Publication number
MY110504A
MY110504A MYPI91001123A MYPI19911123A MY110504A MY 110504 A MY110504 A MY 110504A MY PI91001123 A MYPI91001123 A MY PI91001123A MY PI19911123 A MYPI19911123 A MY PI19911123A MY 110504 A MY110504 A MY 110504A
Authority
MY
Malaysia
Prior art keywords
thin film
zone
deposition
relative movement
lateral direction
Prior art date
Application number
MYPI91001123A
Inventor
Norman Pain Geoffrey
Original Assignee
Norman Pain Geoffrey
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norman Pain Geoffrey filed Critical Norman Pain Geoffrey
Publication of MY110504A publication Critical patent/MY110504A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/025—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

METHOD AND APPARATUS FOR DEPOSITING A THIN FILM (OF MATERIALS SUCH AS METALS, OXIDES, CHALCOGENIDES, PNICTIDES, SUPERCONDUCTORS, ETC.) ON A SURFACE (SUCH AS A SEMICONDUCTOR SUBSTRATES) APPLICABLE TO TECHNIQUES (SUCH AS CHEMICAL VAPOUR DEPOSITION, SPUTTERING AND SPRAYING PYROLYSIS) THAT PROVIDE THE CONSTITUENTS OF THE THIN FILM IN GASEOUS OR AEROSOL FORM.THE METHOD INVOLVES CAUSING RELATIVE MOVEMENT, AT A CONSTANT RATE, BETWEEN THE SURFACE AND A THIN FILM DEPOSITION ZONE (105) OF A THIN FILM DEPOSITION CHAMBER (102) SUCH THAT THE SURFACE PASSES THROUGH THE ZONE (105). THE CHAMBER (102) IS CONFIGURED SUCH THAT DEPOSITION OF FILM ON THE SURFACE IN THE ZONE (105) IS UNIFORM IN A LATERAL DIRECTION ACROSS THE SURFACE. THE LATERAL DIRECTION IS PERPENDICULAR TO THE DIRECTION (118) OF THE RELATIVE MOVEMENT. (FIG. 7)
MYPI91001123A 1990-06-29 1991-06-21 A method and apparatus for treating a surface. MY110504A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPK087990 1990-06-29

Publications (1)

Publication Number Publication Date
MY110504A true MY110504A (en) 1998-07-31

Family

ID=3774786

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI91001123A MY110504A (en) 1990-06-29 1991-06-21 A method and apparatus for treating a surface.

Country Status (6)

Country Link
CN (1) CN1050158C (en)
IL (1) IL98627A (en)
IN (1) IN177541B (en)
MY (1) MY110504A (en)
WO (1) WO1992000406A1 (en)
ZA (1) ZA914759B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004056170A1 (en) * 2004-08-06 2006-03-16 Aixtron Ag Apparatus and method for high throughput chemical vapor deposition

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132543A (en) * 1981-02-09 1982-08-16 Nec Corp Horizontal type reaction tube with rotary type sample holding and heating table
JPS59193131A (en) * 1983-04-19 1984-11-01 Agency Of Ind Science & Technol Device for continuous growth of thin film
FR2591616A1 (en) * 1985-12-17 1987-06-19 Labo Electronique Physique REACTOR CHAMBER FOR EPITAXIAL GROWTH IN STEAM PHASE OF SEMICONDUCTOR MATERIALS.
GB2196019A (en) * 1986-10-07 1988-04-20 Cambridge Instr Ltd Metalorganic chemical vapour deposition
JPH0226893A (en) * 1988-07-15 1990-01-29 Fujitsu Ltd Vapor growth device
GB8824104D0 (en) * 1988-10-14 1988-11-23 Pilkington Plc Process for coating glass
GB8824102D0 (en) * 1988-10-14 1988-11-23 Pilkington Plc Apparatus for coating glass
JPH0344470A (en) * 1989-07-12 1991-02-26 Toshiba Corp Device for forming thin film on semiconductor substrate

Also Published As

Publication number Publication date
IN177541B (en) 1997-02-08
CN1050158C (en) 2000-03-08
WO1992000406A1 (en) 1992-01-09
ZA914759B (en) 1992-06-24
IL98627A (en) 1996-10-31
CN1059763A (en) 1992-03-25

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