MXPA99000451A - Auxiliary atomizing device by - Google Patents

Abstract

Gas-assisted atomizing devices are provided which include liquid orifices, which release liquid, and gas orifices, which release gas to atomize the liquid into droplets, the atomizing devices are formed by at least one first layer and a second layer; Atomizer device can include a gas supply chain and a liquid supply chain that supply gas and liquid to the gas and liquid orifices

Description

AUXILIARY ATOMIZING DEVICE FOR QAS BACKGROUND OF THE INVENTION The present invention claims the benefit of US Provisional Applications Nos. 60 / 021,306, 60 / 021,308, 60 / 021,309, and 60 / 021,310.

FIELD OF THE INVENTION The present invention relates to atomizing devices and to the methods for manufacturing same, and more particularly to atomizing, gas-assisted, micromachined devices that produce small droplets and to methods for manufacturing same.

DESCRIPTION OF THE RELATED TECHNIQUE Liquid atomizing devices are used in various mechanisms, such as medical nebulizers and fuel injectors for combustion chambers. The performance of many of these mechanisms can be improved if the spray device provides a spray with very small drops. For example, small droplets improve the effectiveness of medical nebulizers because small droplets (for example, between 2 and 5 microns) can be inhaled deeply into the lungs. In addition, small drops (for example, less than 20 microns) improve the efficiency of the combustion devices causing a faster vaporization of the fuel. Conventional atomizing devices typically provide a spray having drops within a wide range of sizes, including a small percentage of droplets having an average Sauter diameter smaller than 10 microns. Conventional atomizing devices have rarely been able to provide a spray that has droplets limited to a small scale in size and have an average Sauter diameter smaller than 10 microns, without using additional mechanisms such as ultrasonic current or high voltage electrostatic charges . The failure of conventional atomizing devices to provide a small scale and small droplets can be attributed to the way in which these devices perform atomization. Conventional atomizing devices break the liquid assembly into relatively large ligaments, break the ligaments into relatively large drops through atomization, and break the large drops into small drops through a second atomization. As the droplets become smaller than 100 microns, they become more difficult to break, and secondary atomization typically ends, thus preventing most droplets from becoming smaller than 10 microns. In addition, because the entire liquid is much larger than the desired droplet size, and therefore, must be decomposed a number of times to become relatively small, the droplets finally formed by conventional devices will have a relatively large scale. . Efforts have been made to decrease the drop size by increasing the amount that is forced through the atomizer device. However, this results in a large gas-liquid mass ratio, which is undesirable for many applications because it requires a large gas pump, a larger amount of gas, and a higher gas velocity. Another problem associated with conventional atomizing devices is that two devices, even of the same type, will often have different spray characteristics. These different spray characteristics result from very minor variations in the structure of the atomizing device. With current manufacturing methods, these variations occur more frequently than desired.

BRIEF DESCRIPTION OF THE INVENTION An object of the present invention is to provide atomizing devices that solve the problems before said. Another object of the present invention is to provide atomizing devices that produce a spray having droplets with an average Sauter diameter of 10 microns or smaller. Still another object of the present invention is to provide spraying devices that produce a spray having drops within a small scale of diameters. Another object of the present invention is to provide atomizing devices having a small gas-liquid mass ratio. Still another object of the present invention is to provide atomizing devices of very small size. Still another object of the present invention is to provide atomizing devices that can be mass produced and that, however, have consistent spray characteristics from device to device. Additional objects and advantages of the invention will be apparent from the description that follows. The additional advantages can also be learned by the practice of the invention. In a broad aspect, the invention provides a method for atomizing a liquid, comprising the steps of flowing a liquid over an atomizing edge of an orifice, and flowing a gas against the liquid to cause atomization of the liquid into droplets having a liquid. Sauter average size smaller than 35 microns and a gas-liquid mass ratio of less than or equal to 0.2. In another broad aspect, the invention provides a method of atomizing a liquid, comprising the steps of flowing a liquid over an atomizing edge of an orifice, and flowing a gas against the liquid to cause primary atomization of the liquid into droplets having an average diameter of Sauter smaller than a critical diameter Dmax of the drops, where Dmax = 80 / (CDPAUR where O: surface tension of the liquid; CD: drag coefficient of a drop having a diameter equal to the critical diameter; P ^ ^: density of the gas; and UR: relative speed between the drop and the gas. In another broad aspect, the invention provides an atomizing device comprising a first substantially flat layer having a first opening therethrough, and a second substantially flat layer having a second opening therethrough and being laminated to the first layer in such a way that the first and second openings are aligned to form a main gas hole guiding a main gas in a flow direction, the second opening being bounded by at least one internal surface with at least one edge Atomizer, according to which the first and second layers define at least one orifice for liquid that supplies the liquid to be atomized on the at least one internal surface of the second layer wherein the liquid forms a thin film. In another broad aspect, the invention provides a method for forming an atomizing device, consisting of the steps of forming a first opening in a substantially flat first layer, forming a second opening in a substantially flat second layer, the second opening having at least an inner surface with an atomizing edge, forming at least one hole for liquid in at least one of the first and second layers, and connecting the first and second layers in such a manner that the first and second openings are aligned to form a gas orifice The main one guiding a main gas in a flow direction and in such a way that the liquid orifice supplies the liquid to be atomized on the at least one internal surface of the second opening. In another broad aspect, the invention provides a gas assisted atomizing device consisting of a first substantially flat layer, and a second substantially flat layer having a plurality of holes formed therein, whereby the first and second layers form a gas supply network including a plurality of gas channels that supply gas to at least some of the plurality of orifices, and a liquid supply network that includes a plurality of liquid channels that supply liquid to at least some of the pluralities of holes. In another broad aspect, the invention provides a method for forming a gas aided atomizing device, comprising the steps of forming a gas supply chain and a liquid supply chain in a substantially flat first layer and a substantially second substantial layer. flat, forming a plurality of holes in the second layer to release a spray, and connecting the first and second layers in such a way that the gas and liquid supply chains supply gas and liquid to form a spray in the plurality of orifices. In another broad aspect, the invention provides a gas aided atomizing device consisting of a substantially flat first layer and a substantially flat second layer having a plurality of liquid orifices and a plurality of gas holes formed therein, the first and second layers form a liquid supply chain that includes a plurality of liquid channels that supply liquid to the plurality of liquid orifices and force the liquid through the liquid orifices to form liquid streams, and a supply chain of gas that includes a plurality of gas channels that supply gas to the plurality of gas orifices and force gas through the gas orifices to atomize the liquid streams. It should be understood that both the aforementioned summary and the following detailed description are illustrative and explanatory only and are not restrictive of the invention, as claimed.

DETAILED DESCRIPTION OF THE DRAWINGS The invention will be described in conjunction with the appended drawings, which illustrate the presently preferred embodiments of the invention. Figure 1 is a sectional view of a first embodiment of an atomizing device according to the present invention, a sub-assembly element, and a distribution device. Figure 2 is a top view of the first embodiment. Figure 3 is a sectional view of the first embodiment taken along line 3-3 of Figure 2. Figure 4 is a sectional view of the first embodiment taken along line 4-4 of Figure 2. Figure 5 is a top view of a second embodiment of an atomizing device in accordance with the present invention. Figure 6 is a sectional view of the second embodiment taken along line 6-6 of Figure 5. Figure 7 is a top view of a third embodiment of an atomizing device in accordance with the present invention. Figure 8 is a sectional view of the third embodiment taken along line 8-8 of Figure 7. Figure 9 is a top view of a fourth embodiment of an atomizing device in accordance with the present invention. Figure 10 is a sectional view of the fourth embodiment taken along line 10-10 of Figure 9. Figure 11 is a sectional view of a fifth embodiment of an atomizing device in accordance with the present invention. Figure 12 is a sectional view of a sixth embodiment of an atomizing device in accordance with the present invention. Figure 13 is a top view of a disc having a plurality of atomizing devices. Figure 14 is a top view of a seventh embodiment of an atomizing device in accordance with the present invention. Figure 15 is a sectional view of the sixth embodiment taken along line 15-15 of Figure 14. Figure 16 is a sectional view of the seventh embodiment taken along line 16-16 of Figure 14. Figure 17 is a top view of an eighth embodiment of an atomizing device in accordance with the present invention. Figure 18 is a top view of a ninth embodiment of an atomizing device in accordance with the present invention. Figure 19 is a view of a tenth embodiment of an atomizing device in accordance with the present invention. Figure 20 is a top view of a seventeenth embodiment of an atomizing device in accordance with the present invention. Figure 21 is a sectional view of a twelfth embodiment of an atomizing device in accordance with the present invention. Figure 22 is an additional sectional view of the twelfth embodiment. Figure 23 is a top view of a thirteenth embodiment of an atomizing device in accordance with the present invention. Figure 24 is a sectional view of the thirteenth embodiment taken along line 24-24 of Figure 23. Figure 25 is a top view of a fourteenth embodiment of an atomizing device in accordance with the present invention. Figure 26 is a sectional view of the fourteenth embodiment taken along line 26-26 of Figure 25. Figure 27 is a sectional view of a fifteenth embodiment of an atomizing device in accordance with the present invention. Figure 28 is a sectional view of a sixteenth embodiment of an atomizing device in accordance with the present invention. Figure 29 is a schematic diagram of a flow distribution chain of a seventeenth embodiment of an atomizer device in accordance with the present invention. Figure 30 is an enlarged view of a portion of the fluid distribution chain of Figure 29. Figure 31 is a sectional view of the seventeenth embodiment taken along line 31-31 of Fig. 29. Fig. 32 is a sectional view of the seventeen embodiment taken along line 32-32 of Fig. 29. Fig. 33 is a sectional view of the seventeen modality taken along line 33-33 of Fig. 29. Fig. 34 is a sectional view of the seventeen modality taken along line 34-34 of Fig. 29. Fig. 25 is a view upper of a eighteenth embodiment of an atomizing device in accordance with the present invention. Figure 36 is a sectional view of the eighteenth embodiment taken along line 36-36 of Figure 35.

DESCRIPTION OF THE PREFERRED MODALITIES Reference is now made in detail to the preferred embodiment illustrated in the drawings. As generally shown in Figures 1 to 4, a first embodiment of an atomizing device 40 in accordance with the present invention includes a substantially planar first layer 42, a substantially planar second layer 44, and a substantially planar third layer 46. Each of the first, second and third layers preferably has a length of 10 millimeters, a width of 10 millimeters, and a thickness of 1 millimeter. The first, second and third layers 42, 44 and 46 are preferably made of a material that can be micromachined and precisely fused together. More preferably, the first, second, and third layers are formed of a taxable material. as an elemental semiconductor material or silicon carbide. Suitable semiconductor material includes orientation silicon (100), polycrystalline silicon, and germanium. Unless otherwise indicated in this specification, it is currently preferred that the layers of this embodiment and the other embodiments be cast of orientation silicon (100).

The first layer 42, second layer 44 and third layer 46 have a first opening 52, second opening 54, and third opening 56, respectively. The openings form a main gas orifice 60 which guides a main gas in a flow direction. In this embodiment, each of the first, second, and third openings 52, 54, and 56 are defined by four internal surfaces each having a substantially rectangular shape. The four inner surfaces of the first opening 52 and the four internal surfaces of the second opening 54 converge in the flow direction. These internal surfaces that converge accelerate the main gas, which improves the efficiency of the atomization and aids in the movement of the liquid to the atomizing edges 62 provided on two of the internal surfaces of the second opening 54. Generally, an atomizing edge is a corner or edge of a wall or surface on which a liquid flows in a thin layer, where a high-velocity gas flow breaks the thin liquid layer into ligaments or drops. The fourth internal surface of the third opening 56 diverges in the direction of flow. These diverging internal surfaces decelerate the main gas, which provides a less turbulent sprinkler column. The atomizing edges 62 on the inner surfaces of the second opening 54 are preferably separated by a width of no more than 250 microns, which concentrates the gas flow at the atomizing edges 62 where the gas interacts more strongly with the liquid. The ratio of the smallest perimeter atomizer (that is, the length of an atomizing edge in an orifice) of the second opening 54 to the cross sectional area of the second opening 54 in the plane of this perimeter is preferably at least 8,000 meters- 1, which improves the efficiency of atomization and decreases the gas-liquid mass ratio. The first and second layers 42 and 44 form two orifice seats for liquid and channels 64 that each supply liquid to be atomized within the respective internal surfaces of the second opening 54. The liquid forms thin films having a substantially uniform thickness to the outlet of the liquid orifices 64. The liquid film is further thinned as it is stretched on the inner surfaces of the second opening 54. The liquid orifices and the channels 64 can be formed by providing cavities in the first layer 42, the second layer 44, or both. The liquid forced through the liquid orifices 64, at a flow rate of, for example, 5 milliliters per minute, will form thin films on the inner surfaces of the second opening 54. The thin liquid films are stretched, and additionally thinned, by the high velocity of the gas flow to the atomizing edges 62, wherein the main gas forced through the main gas supply orifice 60, at a flow rate of, for example, 5 liters per minute , breaks the fluid into ligaments and breaks the ligaments into drops through primary atomization. The atomizing device preferably also includes two bore seats for auxiliary gas and channels 66, one on each side of the main gas orifice 60, which is formed by the first, second and third layers 42, 44 and 46. The holes for auxiliary gas and the channels 66 can be formed by providing cavities in the first layer 42 and the second or third layer 44 or 46, or both. The auxiliary gas orifices 66 supply high velocity gas to the atomizing edges 62. The auxiliary gas orifices and the channels 66 are designed so that the auxiliary gas does not become turbulent under normal operating conditions. The gas forced out of the auxiliary gas orifices 66, at a flow rate of, for example, one liter per minute, impinges on the liquid at the atomizing edges 62, effectively releasing the liquid between the auxiliary gas flows and principal. The auxiliary gas thus aids the main gas in the formation of ligaments at the atomizing edges 62 by preventing the accumulation of liquid on the downstream side of the atomizing edges and by cutting the liquid between the auxiliary and main gas flows, forming fine ligaments. The atomizer device 40 of the first embodiment can be produced in batches, similar to the production of batches of integrated circuits. For example, as shown in Figure 13, a disk is processed so as to have a plurality of sections each constituting a third layer 46 of an atomizing device. These sections each have a third opening 56 and portions of holes for auxiliary gas and channels (not visible in Figure 13). Similarly, another disk is processed to have a plurality of sections each constituting a second layer 44 of an atomizing device, and yet another disk is processed so as to have a plurality of sections each constituting a first layer 42 of a device atomizer. The disks are aligned and connected to form a batch of atomizing devices, which are separated and connected to respective mounting structures. Alternatively, the atomizing devices could be connected to their respective mounting structures before separation. For ease of reference, the following, more specific description of the manufacture of an atomizing device according to the present invention will be provided with reference to only one of the plurality of atomizing devices. The following description specifies certain procedures that are currently preferred for micromachining of silicon layers. Unless otherwise indicated in this specification, the use of this method is currently preferred for the microformation of silicon layers of all the described modalities. Initially, a cover layer is deposited or allowed to grow on a first side of the first layer 42 and an etching pattern is then transferred into the cover layer according to conventional techniques used in the production of integrated circuits. The first side of the first layer 52 is etched to form a portion of the first opening 52, a portion of the liquid orifice and the channel 64, and a portion of the auxiliary gas orifice and the channel 66. Preferably, the first side is etched using a crystallographic etching, such as an etching of potassium hydroxide, which is known for its use in the production of integrated circuits. A crystallographic etching is useful because it causes the silicon to be recorded much faster along the crystal axis (100) compared to the direction (111). resulting in angled surfaces (54.7 ° relative to the plane of the layer) in the first layer 42 facing (100). A cover layer is deposited on a second side of the layer 42 with an engraving pattern aligned with the engraving on the first side. The second side is engraved to form a portion of the first opening 52, a portion of the liquid orifice and channel 64, and a portion of the auxiliary gas orifice and channel 66, using a crystallographic etching. The second layer 44 is recorded in the same manner as the first layer 42 to form the second opening 54 and a portion of the auxiliary gas hole and the channel 66. If desired, the second layer 44 could be etched to form a portion of the hole for liquid and channel 64. The third layer 46 is also etched in the same manner as the first layer 42 to form the third opening 56 and a portion of the auxiliary gas orifice and the channel 66. The first, second, and third layers 42 , 44 and 46 are then connected to form the atomizing device. Fusion bonding of silicon, with or without a flowable layer (for example, borophosphosilicate glass or phosphosilicate glass) or an alloying layer (for example, a thin copper film), is the currently preferred method for connecting two layers of silicon in this and the other modalities. Figure 1 shows a presently preferred arrangement for providing the main gas, the auxiliary gas and the liquid to the atomizing device. This arrangement includes a sub-assembly element 68 and a distribution device 70. The sub-assembly element 68 has channels for supplying the main gas, the auxiliary gas, and liquid to the respective channels of the atomizing device 40. Preferably, the sub-assembly element 68 It is made of PYREX. Anodic bonding is the currently preferred method for connecting a PYREX member to a silicon member in this and other embodiments. The channels of the sub-assembly element 68 are preferably formed by an ultrasonic machining method, because the channels are narrow and the walls between the channels are thin. Ultrasonic machining is a currently preferred method for forming channels in PYREX when the channels' do not extend completely through the layer, the channels are narrow, or thin walls exist between the channels. PYREX abrasive liquid jet machining is an alternate procedure that is preferred when the channels extend completely through the layer, the channels are not narrow, and the walls are thick. The dispensing device 70 has passages for distributing the main gas, the auxiliary gas and liquid to the respective channels of the sub-assembly element 68. The laminations 71 and two outer members 72 form these passages. The laminations 71 and the outer members 72 are preferably made of metal. The dispensing device also includes clamps 74 made of rigid material, such as metal or a rigid plastic, which hold the atomizing device 40 on the dispensing device 70. When the clamps 74 are made of hard metal, mats 75 formed of an elastomer can be provided to prevent cracking or breaking of the atomizing device 40. The sub-assembly element 68 and the dispensing device 70 are preferably connected by a sealing cap 77 made of a thin sheet of adhesive, such as PYRALUX adhesive (EIDu Pont De Nemours) and Co. (Inc :)), or a thin sheet of an adhesive polyamide, such as KAPTON KJ (DuPont High Performance Films). Alternatively, they can be joined by an anode bond. Figures 5 to 12 show embodiments of atomizing devices that are similar in many respects to the first embodiment shown in Figures 1 to 4. The differences between these embodiments and the first embodiment are described below. A second embodiment of an atomizing device 80 is shown in Figures 5 and 6. In this embodiment, the internal surfaces of the first opening 52, the third opening 56, and all the internal surfaces forming the holes and channels 66 and 64 of the first layer 42 extends substantially parallel to the flow direction. Because the internal surfaces of the third opening 56 extend parallel to the flow direction, these will condition the spraying of droplets before they are discharged from the atomizing device 80 and will provide a stable point of release for the gas flow and thus help to reduce turbulence in the spray column outside the atomizing device 80. The internal surfaces of the Atomizer device 80 extending parallel to the flow direction are formed by a different method than the corresponding angled inner surfaces of the atomizer device 40 of the first embodiment. Specifically, these parallel surfaces are preferably formed using a vertical wall micromachining process, such as a deep-etch silica reagent ion etching process (RIE), a vertical wall photoelectrochemical silicon etching (PEC) process (as is described in Richard Mlcak, Electrochemical and Photo Electrochemical Micromachining of Silicon in HF Electrolytes (1994) (thesis, Massachusetts Institute of Techonogy), which is incorporated herein by reference), a silicon-based hydroxide etch, or ultrasonic silicon machining or PYREX. Because the inner surfaces of the first layer 42 extend all parallel to the flow direction, they are all formed using a vertical wall micromachining process. The third layer 46 is formed by a combination of processes because it has parallel surfaces in the third opening 56 and angled surfaces forming a portion of the auxiliary gas orifice and the channel 66. The internal surfaces of the third opening 56 are formed covering the first side of the third layer 46 and performing a vertical wall micromachining process. The internal surfaces of the auxiliary gas orifice portion and the channel 66 are formed by covering the second side of the third layer 46, and performing a crystallographic etching procedure.

A third embodiment of an atomizing device 82 is shown in Figures 7 and 8. In this embodiment, the internal surfaces of the first, second, and third openings 52, 54, and 56 and the internal surfaces of the holes and channels 64 and 66 of the first, second and third layers 42, 44 and 46 all extend substantially parallel to the flow direction. Because all internal surfaces extend parallel to the direction of flow, they can be formed using a vertical wall micromachining process. A fourth embodiment of an atomizing device 84 is shown in Figures 9 and 10. In this embodiment, additional openings 86 are provided in the third layer 46 (the openings are preferably produced by the same engraving used for the third opening 56). The openings 86 form auxiliary gas flows on opposite sides of the atomized liquid. Auxiliary gas flows reduce the tendency of spray droplets to fly off. The auxiliary gas flows can also create a gas cover around the sprinkling of droplets to cover the spray of the atmosphere. A fifth embodiment of an atomizing device 88 is shown in Figure 11. In this embodiment, a manifold 89 is provided to increase the distance between intakes for the main gas, the auxiliary gas and the liquid. This manifold 89 also makes the sub-assembly element 68 unnecessary. The manifold 89 is constituted by the first, second, and third manifold layers 90, 92 and 94. The first and third manifold layers 90 and 94 are preferably made of PYREX, which it can be anodically bonded to adjacent layers of silicon. The channels in the first and third layers of the manifold are preferably formed by ultrasonic machining. The second layer 92 of the manifold is preferably made of silicon, and the channels in the second layer of the manifold 92 are preferably formed by a vertical wall micromachining process or a crystallographic etching process. A sixth embodiment of an atomizing device is shown in Figure 12. In this embodiment, a manifold 99, formed in a single layer, is provided to increase the distance between the intakes for the main gas, the auxiliary gas, and the liquid. The multiple 99 is preferably made of PYREX. The channels in the manifold 99 are preferably formed by ultrasonic machining. A seventh embodiment of an atomizing device 100 is shown in Figures 14 to 16. The atomizing device includes a substantially planar first layer 102 and a substantially planar second layer 104. Each of the first and second layers 102 and 104 preferably has a length of 5 millimeters, a width of 5 millimeters, and a thickness of 1 millimeter. The first and second layers 102 and 104 form a gas passage 106 and a plurality of gas channels 108 that supply gas to a plurality of gas holes 110 formed in the second layer 104. The first and second layers 102 and 104 also form a liquid passage 112 and a plurality of liquid channels 114 that supply the liquid to a plurality of liquid orifices 116 formed in the second layer 104. As shown in Figure 14, the gas channels 108 and the liquid channels 114 are preferably interdigitated. The gas is supplied to the gas passage 106 through a gas port 118. Similarly, the liquid is supplied to the liquid passage 112 through a liquid port 120. The liquid port 120 preferably has a filter 122 in it. take to remove impurities from the liquid to avoid clogging of the liquid orifices 116. The filter 122 preferably has extremely fine filter pores which may, for example, be circular or square. The filter pores preferably have widths less than or equal to 1/3 the width of the liquid orifices 116. The width of the liquid orifices 116 is preferably less than 75 microns. Preferably, for an orifice where atomization is occurring (the gas orifices in this mode), a ratio of a smaller atomizing perimeter of the orifice to a cross-sectional area of the orifice is at least 8,000 meters. The width of each of the gas channels 108 and the liquid channels 114 is preferably less than 200 microns. The width of the gas holes 110 is preferably less than or equal to 10 times the Sauter average diameter of the atomized liquid droplets at an average air velocity of 100 m per second in the gas orifices. The Sauter average diameter is determined at a location spaced from the surface of an atomizing device by a distance that is 10 to 100 times the width of the gas holes 110. This provides the advantage of a low gas-liquid mass ratio. In relative terms, the width of each of the liquid channels 114 is preferably less than or equal to 10 times the width of each of the liquid orifices 116. The width of each of the liquid channels is preferably less than or equal to 50 times a smaller width of the liquid orifices 116. This allows a closer spacing of the gas and liquid orifices 110 and 116. The thickness of each of the liquid orifices 116 is also preferably less than or equal to 4 times a width of the orifice for liquid 116. This allows more channels per square millimeter of the arrangement of atomizing orifices. The liquid forced through the liquid orifices 116a, for example, a flow rate of 10 milliliters per minute per square millimeter of surface occupied by the orifice arrangement will move through the surface of the second layer 104 to the atomizing edges 124 of the gas holes 110. The gas forced through the gas holes 110, at a flow rate of, for example, a standard liter per minute per square millimeter of surface occupied by the arrangement of holes, breaks the liquid at the atomizing edges 124 in ligaments and breaks the ligaments into drops through a primary atomization. The atomizer device 100 of this seventh embodiment can be produced in batches on disks, similar to the atomizer device of the first embodiment. The internal surfaces of each layer are preferably formed using a vertical wall micromachining process, because this allows a higher density of supply channels and therefore allows a greater flow capacity per square millimeters of the atomizing arrangement. However, in this embodiment and in the modalities described below, an engraving stop is provided in the second layer 104 at a location corresponding to the bottom of the holes 110 and 116 and the upper part of the channels 108 and 114. The stop etching can be provided by known means such as diffusion, ion inplantation, and epitaxial growth, and disc bonding and thinning. Although disc bonding and thinning procedure require the use of two layers to form an engraving stop, the product formed by this procedure will be considered as a single layer 104 in this specification. It should be noted that the formation of oxygen beginners can be reduced by avoiding heating the first layer on the scale of 600 to 1000 EC over an extended period and using disks with low oxygen content. The first and second layers 102 and 104 are then preferably connected by silicon melt bonding to form atomizer device 100. Figures 17 to 20 show embodiments of atomizing devices having the same structure as the seventh embodiment, except for different arrangements of the holes for gas and liquid. The top views shown in Figures 17 to 20 are enlarged in relation to the top view shown in Figure 14 for ease of illustration. As shown in figure 17, the gas hole 110 of the eighth embodiment 126 has a zig zag shape. This shape provides more perimeter for atomization, that is, a larger atomizing edge 124, which increases the atomization performance. As shown in Figure 18, the gas and liquid orifices 110 and 116 of the ninth embodiment 128 are formed by a plurality of cylinders. As shown in FIG. 19, the gas holes 110 of the tenth embodiment 130 are grooved extending perpendicular to the liquid orifices 116. This arrangement provides an additional perimeter for atomization.

As shown in Figure 20, the gas and liquid orifices 110 and 116 of the eleventh embodiment 132 are grooved and off center. This arrangement provides an additional perimeter for atomization. Figures 21 and 22 show a twelfth embodiment of an atomizing device 134. This embodiment is the same as the seventh embodiment, except that the second layer 104 is relatively thin, having a thickness of preferably less than four times the width of the holes for liquid 116, and the aspect ratio of the holes for liquid (the ratio of hole thickness to hole width) is less than four. The gas and liquid orifices 110 and 116 are formed in the second layer 104. The gas and liquid channels 108 and 114 are formed primarily in the first layer 102. The surfaces of the first and second layers 102 and 104 are formed preferably by a vertical wall micromachining process. The first and second layers 102 and 104 are then aligned and connected by silicon fusion bonding. Figures 23 and 24 show a thirteenth embodiment 136 of the invention. This embodiment is the same as the seventh embodiment, except that a third substantially flat layer 138 is provided on the second layer 104 to form paths 139 which guide the liquid to the gas holes 110 and confine the liquid to a very thin film.

The third layer 138 preferably has a thickness sufficient to prevent breakage during operation and a length and width consistent with the first and second layers 102 and 104. The liquid forced through the liquid orifices, at a flow rate of, for example, 10 milliliters per minute per square millimeter of spray area arrangement, will move through the paths 139 between the second and third layers 108 and 104 to the atomizing edges 124. The gas forced through the gas orifices 110, at a speed of, for example, 200 meters per second, breaks the liquid at the edges of atomizers 124 into ligaments and breaks the ligaments into droplets through a primary atomization. The third layer 138 is preferably made by a conventional surface micromachining method (sacrificial layer) on the side of the second layer 104. A rapidly recordable sacrificial layer such as a phosphosilicate crystal with high phosphorus content (or a material of soluble polymers) is deposited on the second layer 104 after forming the holes 110 and 116 in the second layer 104 (it is preferable that the holes have bottom parts closed at this point-not yet open to the channels 108 and 114) with the sacrificial layer with a thickness equal to the desirable space between the second layer 104 and the third layer 138. The sacrificial layer is profiled and removed by etching in areas where the third layer 138 is to be adhered to the second layer 104. Next, the third layer such as polycrystalline silicon or an insoluble polymer layer such as a polyimide is deposited on the sacrificial profiled layer. The third layer 138 is profiled and removed by etching in areas where the third layer 138 must have openings. The last step of surface micromachining is the removal by etching of the remainder of the sacrificial layer, thereby obtaining the flow paths 139 between the third layer 138 and the second layer 104. Alternatively, the third layer 138 may be a film of unreachable plastic such as polyimide (e.g. KAPTON KJ) with paths and holes formed in the film by laser machining (such as an excimer laser), RIE or plasma etching, and / or hot embossing. Preferably, the paths 139 for fluid flow between the third layer 138 and the second layer 104 are laser cut or hot embossed in the plastic film uniformly bonded over a large area such that the precise alignment of the paths 139 in the third layer 138 to the holes in the second layer 104 is not required. After joining the third layer 138 to the second layer 104, the openings of the gas orifice in the third layer 138 are engraved or cut by laser. In view of the paths 139 provided by the third layer 138, the atomizing device shown in Figure 24 could also be operated by flowing the liquid into the port 118 that was previously used for the gas and flowing the gas into the port 120 that was previously used for the liquid. When the gas and liquid are switched, it is preferable that the liquid orifices have high gas flow velocity around all their perimeters, so that thick accumulations of liquid are not allowed to be acomulen. Figures 25 and 26 show a fourteenth embodiment 140 of an atomizing device. This modality is similar to the seventh modality shown in figures 14 to 16. However, this fourteenth modality has a different gas supply chain. Specifically, the atomizing device 140 includes a substantially flat plenum layer 142, which forms a plenum 143 for the gas. The gas port 118 supplies gas from a gas reservoir to the plenum 143. Each of the first and second layers 102 and 104 preferably has a length and a width determined by the desired liquid atomization rate (based on a breaking scale). as of 10 milliliters per minute per square millimeter of arrangement), and a width within the normal scale for silicon disks (for example 500 microns), used for bulk micromachining. The full layer is preferably silicon, although it could be formed from other materials such as PYREX. The gas holes 110 formed in one surface of the second layer have a significantly greater thickness than in the seventh embodiment. These gas orifices 110 extend through the first and second layers 102 and 104 so as to be in fluid communication with the plenum 143. The gas orifices 110 preferably have the same length and width as in the seventh embodiment. The liquid orifices 116 and liquid channels 114 preferably have the same dimensions as in the seventh embodiment. The liquid forced through the liquid orifices 116, for example, a flow rate of 10 milliliters per minute per square millimeter of spray area, will move through the surface of the second layer 104 to the atomizing edges. of the gas holes 110. The gas forced through the gas holes 110, at a speed of, for example, 200 meters per second, breaks the liquid at the atomizing edges 124 into ligaments and breaks the ligaments into drops through of the primary atomization. The atomizer device 140 of this fourteenth embodiment can be produced in batches on disks, similar to the atomizer device of the first embodiment. The internal surfaces of each layer are preferably formed using a vertical wall micromachining process. The layers are then aligned and connected by silicon fusion junction to form the atomizing device. Figure 27 shows a fifteenth embodiment 144 of the invention. This embodiment is the same as the fourteenth embodiment, except that a third substantially flat layer 138 is provided on the second layer 104 to form paths 139 which guide the liquid to the gas holes 110. The third layer 138 preferably has a sufficient thickness to avoid rupture during the operation, and a length and width consistent with the first and second layers 102 and 104. The liquid forced through the orifices for liquid to, for example, a flow rate of 10 milliliters per second per square millimeter of spray area arrangement, will move through the surface of the second layer 104 to the atomizing edges 124. The gas forced through the gas orifices 110, at a rate of, for example, 200 meters per second, breaks the liquid at the atomizing edges into ligaments and breaks the ligaments into drops through the primary atomization. The third layer 138 is micromachined and fixed to the second layer 104 by the method described above in relation to the thirteenth embodiment. A sixteenth embodiment of an atomizer device 146 is shown in FIG. 28. This embodiment includes a substantially flat 142 plenum layer., a first layer 102 substantially planar, and a second layer 104 substantially planar. Each of the first and second layers 102 and 104 preferably have a length and a width determined by the desired rate of liquid atomization (based on a breaking scale as of 10 milliliters per minute per square millimeter of holes), and a thickness within the normal scale for silicon disks (for example, 500 microns), used for bulk micro-machining. The plenum 142 is preferably formed of silicon, but Jj- may be made of other materials, such as PYREX. The plenum 142 and a first layer 102 form a plenum 143 for gas. A gas port (not shown) supplies gas from a gas reservoir to the plenum 143. The gas orifices 110 are formed in a surface of the second layer 104. These gas orifices extend through the first and second layers. 102 and 104 and 10 are in fluid communication with the plenum 143. The holes p for gas 110 preferably have the same length and width dimensions as in the seventh embodiment, but their thickness is significantly greater than in the seventh embodiment. The first and second layers 102 and 104 form a liquid passage 15 (not shown) and a plurality of liquid channels 114 that supply liquid to a plurality of liquid orifices 116 formed in the first layer 102. The orifices for liquid 116 and the liquid channels 114 preferably have the same dimensions as in the seventh embodiment. The liquid is supplied to the liquid passage through a liquid port (not shown), which preferably has a filter (not shown), like the filter of the seventh embodiment. The liquid forced through the holes to Liquid 116 a, for example, a flow rate of, for example, 10 milliliters per minute per square millimeter of the spray area arrangement, will move through the surface of the first layer 102 to the inlet ports for gas 110. The gas in the plenum 143 is forced into the gas holes 110, at a flow rate of, for example, 200 meters per second, and draws the liquid through the gas orifice at the exit of the orifice for gas. As the liquid moves along the walls of the gas orifice, some liquid is broken into ligaments and is atomized. The remaining liquid will be brought to the outlet of the gas hole (the atomizing edge). The gas flow breaks into liquid at the atomizing edges into ligaments and breaks the ligaments into droplets through primary atomization. The atomizer device 146 of this sixteenth embodiment can be produced in batches on disks, similar to the atomizer device of the first embodiment. The internal surfaces of each layer 142, 102 and 104 are preferably formed using a vertical wall micromachining process. The plenum, first and second layers are then aligned and connected by silicon fusion junction to form the atomizing device. If the PYREX to be used for a full layer, it is bonded to the silicon layers by anodic bonding. A seventeenth embodiment 148 of the invention is shown in FIGS. 29 to 34. This embodiment is similar in many aspects to the seventh embodiment shown in FIG. 15. However, this seventeenth mode has a string of. relatively complex supply that includes conduits, passages, and interdigitated supply channels, which supply gas and liquid to the holes for gas and liquid. As generally shown in Fig. 29, gas enters through a gas port 118 and flows through a conduit 150 into smaller passages 152. The gas from the passages 152 flows into even smaller channels 108 which supply the gas to the gas holes 110. Similarly, the liquid enters through a liquid port 120, flows through the conduit 154, flows through smaller passages 156, and flows through even smaller channels 114, which supply the liquid to the liquid orifices 116. As shown in Figure 31, the atomizing device includes a connecting block 158, a substantially flat filter layer 160, a substantially planar first layer 102, and a second layer 104 substantially flat Each of the filter layers 100, the first layer 102, and the second layer 104 preferably have a length and width determined by the desired rate of liquid atomization (based on a break scale as of 10 milliliters per minute per millimeter). square of holes), and a thickness within the normal scale for silicon disks (for example 500 microns) used for bulk micromachining (although the first layer is preferably made of PYREX).

The connection block 158 has a gas port 118 and a liquid port 120 for connection to the gas and liquid reservoirs. The connection block 158 is preferably made of steel or other machinable material which is impervious to liquid. As shown in Figure 33, the filter layer 160 has a main gas supply 162 that supplies the gas to the gas conduit 150. The main gas supply 162 is connected to the gas port 118 through an O-ring 164 The filter layer 160 has a main supply 166 of liquid which supplies the liquid to the liquid conduits 154. The main supply 166 of liquid is connected to the liquid port 120 through a ring 0 168. The main supply 166 of liquid includes a plurality of elongated channels 170 (figures 33 and 34). Each of these channels 170 has filter pores 173 in its intakes.

These filter pores 173 may, for example, be circular or square, and preferably have widths of less than or equal to one third of the width of the liquid orifices. 116. As shown in Figure 34, the filter pores 173 can be washed by the fluid flowing into the liquid port 120 and through a flow port 172. During normal operation, this flow port 172 is closed, at unless a recirculating liquid pumping system is used. Unlike the second layer 104 and the filter layer 160, the first layer 102 is preferably made of PYREX. The first layer 102 has gas and liquid conduits 150 and 154 (Figure 31) which are in fluid communication with the main gas and liquid supplies 162 and 166. The first layer 102 also has gas passages 152 (not shown in the section) and liquid passages 156 (Figure 32) which are in fluid communication with the gas and liquid conduits 150 and 154. The second layer 104 has gas and liquid channels 108 and 114 (Figure 31) which are in fluid communication with the gas and liquid passages 152 and 156 and are preferably interdigitated. The gas and liquid channels 108 and 114 provide gas and liquid to holes for gas and liquid 110 and 116 formed on a surface of the second layer 104. The gas and liquid channels 108 and 114 and the holes for gas and liquid 110 and 116 (FIG. 30) preferably have the same dimensions as the channels and holes of the seventh embodiment. The liquid forced through the liquid orifices 116 at a flow rate of, for example, 10 milliliters per minute per square millimeter of spray area arrangement, will move through the surface of the second layer 104 to the edges gas orifice atomizers 110. The gas forced through the gas holes 110, at a speed of, say, 100 meters per second, breaks the liquid at the atomizing edges into ligaments and breaks the ligaments into drops through of the primary atomization. The atomizing device 148 of this seventeenth mode can be produced in batches on disks, similar to the atomizer device of the first embodiment. The internal surfaces of each layer are preferably formed using a vertical wall micromachining process. However, the inner surfaces of the first layer 102, which is formed of PYREX, are preferably formed by ultrasonic machining. The filter, the first and second layers are then aligned and connected by anodic junction, which is a preferred method for connecting silicon to PYREX. The gas and liquid ports 118 and 120 of the connection block 158, which is made of steel, are preferably formed by common machining methods, and the plenum, first and second layers are then connected to the connection block through O-rings. 164 and 168 (or a sealing cap) to form the atomizing device. Having described the preferred implementations of the invention, it is appropriate to address the principles underlying the above and other implementations of the invention. It has been determined, in connection with the present invention, that the aforementioned atomizing devices cause the primary atomization of the liquid in droplets having an average Sauter diameter smaller than 35 microns at a gas-liquid mass ratio of less than or equal to to 0.2. An average Sauter diameter of less than 35 microns occurs because of the thickness of the liquid layer from which the ligaments are formed. A gas-liquid mass ratio of less than 0.2 occurs due to the narrowness of the gas orifices. This combination allows small droplets to be formed while using less gas to atomize a particular volume of liquid. Additionally, the aforementioned atomizing devices cause the primary atomization of the liquid into droplets having an average diameter of Sauter smaller than a critical diameter Dmax of the droplets. Dmax is the maximum stable diameter of a drop: Dmax = 8d / (CDpAUR2) where: d: liquid surface tension; CQ-: drag coefficient of a drop having a diameter equal to the critical diameter; A: gas density; and UR: relative speed between the drop and the gas. The primary atomization that produces droplets smaller than the critical diameter occurs due to the thinning of the liquid at the atomizing edge. This results in an average drop size somewhat smaller, and also in a narrower drop size distribution. The atomizing devices also form ligaments detached from liquid having an average width smaller than 5 times the critical diameter Dmax of the droplets.

This occurs due to the thinning of the liquid at the atomizing edge. This is advantageous because there is less resistance on the second atomization. The atomizing devices flow gas against the liquid and can achieve efficient atomization at a rate of less than or equal to 100 meters per second. This is possible due to the thinning of the liquid at the atomizing edge. This results in less turbulence in the sprinkler system. In each of the aforementioned atomizing devices, the ratio of an atomizing perimeter of each orifice to a cross-sectional area of the orifice is at least 8,000 meters. This is advantageous because the high velocity gas flow is concentrated at the atomizing edge where the first atomization takes place. Additionally, the gas-liquid mass ratio in each embodiment is preferably less than or equal to 0.2 and, more preferably, less than or equal to 0.1. This ratio provides better performance by limiting the amount of gas required. Additionally, these atomizing devices can be formed by manufacturing techniques that allow batch production, thus allowing simultaneous production of hundreds or possibly more than one million atomizing devices in a single layer. Because the atomizing devices do not need to be separated after being formed into a batch, the present invention also provides for the formation of large orifice arrangements. This is important to obtain high flow rates, or to adjust the flow velocity to a production environment. These atomizing devices are also made by methods that allow each device to be made exactly the same and in accordance with precise dimensional requirements. This is important to obtain reproducible spray characteristics from one spray device to the next, or from one batch to the next. The present invention provides high pressure operation of large arrangements with very thin structures maintaining the ratio of (a) channel width to (b) hole thickness low enough so that cracking and / or breakage do not occur. For example, a hole 4 microns thick can operate at 7.03 kg / cm without rupture when the channel width is limited to 100 microns. The present invention supplies fluid to long orifice arrangements, without requiring a large amount of space, utilizing efficient, space-saving supply chains. These chains can be made efficiently through batch production. Tens, hundreds, or even thousands of supply channels can be formed simultaneously in one layer or stack of layers, rather than being formed from one channel at a time. In addition, multiple layers of supply channels can be formed. This is important to provide large hole arrangements. The present invention also allows multifluid arrangements in which neighboring orifices release different fluids. A eighteenth embodiment of an atomizing device according to the present invention is shown in Figures 35 and 36. This mode works differently from the preceding modes. This mode works by breaking induced by first air and second air of liquid streams or jets. This eighteenth embodiment 180 includes a substantially planar first layer 182 and a substantially planar second layer 184. Each of the first and second layers 182 and 184 preferably has a length of 5 millimeters, a width of 5 millimeters, and a thickness of 1 millimeter. The first and second layers 182 and 184 form a gas passage 186 and a plurality of gas channels 188 that supply gas to a plurality of gas holes 190 formed in the second layer 184. The first and second layers 182 and 184 also form a liquid passage 192 and a plurality of liquid channels 194 that supply liquid to a plurality of liquid orifices 196 formed in the second layer 184. As shown in FIG. 36, gas channels 188 and liquid channels 194 they are preferably interdigitated.

The gas is supplied to the gas passage 186 through a gas port 198. Similarly, the liquid is supplied to the liquid passage 192 through a liquid port 200. The liquid port 200 has a filter (not shown). ) in its intake to remove impurities from the liquid to prevent clogging of the liquid orifices 196. The filter preferably has extremely fine filter pores which may, for example, be circular or square. The filter pores preferably have widths less than or equal to one third of the width of the liquid orifices 196. The liquid orifices 196 preferably have compact cross-sections (eg, circles or squares), with thicknesses less than four times the width of the liquid hole. In this embodiment sufficient liquid pressure is applied to initiate and maintain the liquid streams from these liquid orifices 196. The gas flow is arranged so that after the streams have left the liquid orifices 196, the gas interacts with the liquid. the currents with enough differential velocity to accelerate the breaking before the current breaks due to its own internal instability (Rayleigh breaking). The flow velocity of the liquid stream is preferably 10 meters per second and the gas flow rate is preferably greater than 100 meters per second.

The break is induced by the wind, that is, the substantially greater velocity of the gas incident on the liquid stream in relation to the speed of the liquid stream. This wind-induced breakage can be described in terms of first wind and second wind. In the breaking of the first wind, the liquid current oscillations are still mainly dilational, and the formed droplet diameters are almost the same as the diameter of the current. In the second wind break, the fluid current oscillations are mainly sinuous, and the diameters of droplets formed are much smaller than the diameter of the current. The benefits of this wind induced breakage include (1) the droplets formed are smaller than the drops due to Rayleigh breaking and (2) the drop size distribution is intermediate between the Rayleigh break (scattered monkey) and the typical atomization ( very large size distribution). The atomizer device 180 of this embodiment can be produced in batches on disks, similar to the atomizer device of the first embodiment. The internal surfaces of each layer are preferably formed using a vertical wall micromachining process. The first and second layers 182 and 184 are then connected by silicon fusion junction, or by anodic bond (if the first layer 182 is PYREX) to form the atomizer device 180.

The atomizer device 180 of this embodiment can be adapted to use the supply chains of the fourteenth and seventeenth modalities. It will be apparent to those skilled in the art that various modifications and variations may be made in the apparatus of the present invention without departing from the scope or spirit of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention described herein. It is intended that the specification and examples be considered as illustrative only, with a true scope and spirit of the invention being indicated by the following claims.

Claims (70)

NOVELTY OF THE INVENTION CLAIMS

1. - A method for atomizing a liquid, consisting of the steps of: providing a recordable material; etching 31 recordable material to form a hole that has an atomizing edge; flowing a liquid over the atomizing edge of the hole; and flowing a gas against the liquid to cause atomization of the liquid into droplets having an average Sauter diameter smaller than 35 microns at a gas-liquid mass ratio of less than or equal to 0.2.

2. The method according to claim 1, further characterized in that the gas is fluid against the liquid at a rate of less than or equal to 100 meters per second.

3. The method according to claim 1, further characterized in that the fluid gas against the liquid forms detached ligaments of liquid having an average width smaller than 5 times a critical diameter Dmax of the drops, wherein: Dmax = 80 / (CQP ^ UR), where O; surface tension of liquid; CJT: drag coefficient of a drop having a diameter equal to the critical diameter; PA: gas density; and UR: relative speed between the drop and the gas.

4. The method according to claim 1, further characterized in that a ratio of a smaller atomizer perimeter of an orifice to a cross-sectional area of the orifice is at least 8, OOO-1.

5. A method to atomize a liquid, which consists of the steps of: flowing a liquid on an atomizing edge of a hole; and flowing a gas against the liquid to cause the primary atomization of the liquid into droplets having an average Sauter diameter smaller than a critical diameter Dmax of the drops, wherein: Dmax = 80 / (C ^ P ^ UR), where: O: liquid surface tension; C £ -: Coefficient of drag of a drop having a diameter equal to the critical diameter; PA: Gas density; and UR: Relative velocity between the drop and the gas.

6. An atomizing device consisting of: a first substantially flat layer having a first opening therethrough; and a second substantially planar layer, said second planar layer parallel and adjacent to the first planar layer, said second planar layer has a second opening therethrough and is laminated to the first layer such that the first and second openings are aligned to form a main gas orifice that guides a main gas in a flow direction, the second opening is limited by at least one internal surface with at least one atomizing edge. Accordingly, the first and second layers define at least one orifice for liquid that supplies liquid to be atomized within at least one internal surface of the second layer wherein the liquid forms a thin film.

7. - The atomizing device according to claim 6, further characterized in that the second opening is limited by at least two internal surfaces converging in the flow direction.

8. - The atomizer device according to claim 7, further characterized in that the first opening is limited by at least two internal surfaces that converge in the direction of flow.

9. The atomizing device according to claim 8, further characterized in that it additionally comprises a third substantially flat layer, the third flat layer parallel and adjacent to the second flat layer, said third flat layer has a third opening through the It is laminated to the second layer, whereby the third opening is limited by at least two internal surfaces that diverge in the flow direction.

10. The atomizing device according to claim 7, further characterized in that the first opening is limited by at least two internal surfaces extending substantially parallel to the direction of flow.

11. The atomizing device according to claim 10, further characterized in that it additionally comprises a third substantially flat layer parallel to the second layer, said third layer having a third opening therethrough. It is laminated to the second layer, whereby the third opening is limited by at least two internal surfaces that are substantially parallel to the direction of flow.

12. The atomizing device according to claim 6, further characterized in that it additionally comprises a third layer substantially parallel to the second layer, the third layer has a third opening therethrough and is laminated to the second layer of the second layer. so that the third opening is aligned with the first and 10 second openings for forming the main gas orifice, whereby the first, second, and third openings are each bounded by at least two internal surfaces extending substantially parallel to the flow direction.

13. - The atomizing device in accordance with the 15 claim 6, further characterized in that the first and second layers consist of an elemental semiconductor material.

14. The atomizing device according to claim 13, further characterized in that the first and second layers include silicon.

15. The atomizing device according to claim 6, further characterized in that a ratio of a smaller atomizer perimeter of the second opening to a cross-sectional area of the second opening is at least 8,000 meters.

16. The atomizing device according to claim 6, further characterized in that the second opening has at least two opposite internal surfaces separated by a width of no more than 250 microns.

17. The atomizing device according to claim 6, further characterized in that it additionally comprises a third substantially flat layer parallel to the second layer, said third layer has a third opening therethrough and is laminated to the second layer of the second layer. such that the third opening is aligned with the first and second openings to form the main gas orifice, whereby the second and third layers define at least one auxiliary gas orifice that supplies auxiliary gas to the atomizing edge of at least one surface internal of the second opening.

18. The atomizing device according to claim 17, further characterized in that the third layer includes additional holes that form a flow of auxiliary gas on at least one side of atomized liquid.

19. The atomizer device according to claim 6, further characterized in that it consists additionally of a manifold having a first channel that supplies the main gas to the main gas orifice and a second channel that supplies the liquid to the liquid orifice, according to which the first and second channels converge each in the direction of flow.

20. A method for forming an atomizing device, comprising the steps of: engraving a first opening in a substantially flat first layer; etching a second opening in a second substantially flat layer, the second opening having at least one internal surface with an atomizing edge; engraving at least one hole for liquid in at least one of the first and second layers and connecting the first and second layers adjacently and parallelly such that the first and second openings are aligned to form a main gas orifice that guides a main gas in a flow direction and in such a way that the liquid orifice supplies liquid to be atomized on at least one of the internal surfaces of the second opening.

21. The method of claim 20, further characterized in that it additionally comprises the steps of: engraving a third opening in a substantially flat third layer; etch at least one auxiliary gas hole in at least one of the second and third layers and connect the second and third layers such that the third opening is aligned with the first and second openings so as to form the main gas orifice and such that the auxiliary gas orifice supplies auxiliary gas to the atomizing edge of at least one internal surface of the second opening.

22. The method according to claim 20, further characterized in that the first and second layers are made of silicon.

23. - The method according to the claim 20, further characterized in that a plurality of first openings are formed on the first layer, a plurality of second openings are formed on the second layer, and a plurality of liquid orifices are formed in at least one of the first and second layers, and The first and second layers are divided into a plurality of atomizing devices after being connected. 24.- A gas-assisted atomizing device consisting of: a first layer substantially flat; and a second substantially planar layer parallel and adjacent to the first layer, said second layer having a plurality of holes formed therein, whereby the first and second layers form a gas supply chain that includes a plurality of gas channels which supply gas to at least one of the pluralities of orifices, and a liquid supply chain that includes a plurality of liquid channels that supply liquid to at least some of the plurality of orifices. 25. The atomizing device according to claim 24, further characterized in that the plurality of holes include a plurality of gas orifices and a plurality of liquid orifices, and gas channels supply gas to the gas orifices and channels of liquid supply liquid to the holes for liquid. 26.- The atomizing device according to claim 25, further characterized in that it additionally comprises a third substantially flat layer arranged adjacent and parallel to the second layer to form paths to guide the fluid from a hole for gas and liquid to others of the holes for liquid and gas. 27. The atomizing device according to claim 25, further comprising a plenum layer, which forms a plenum for supplying gas to the plurality of gas orifices. 28. The atomizing device according to claim 25, further characterized in that the gas supply chain further includes a plurality of gas passages, which are larger than the gas channels and which supply gas to the gas channels, and The liquid supply chain further includes a plurality of liquid passages, which are larger than the liquid channels and which supply liquid to the liquid channels. 29. The atomizing device according to claim 28, further characterized in that the gas supply chain additionally includes a gas conduit, which is larger than the gas passages and which supplies gas to the gas passages, and The liquid supply chain additionally includes a liquid conduit, which is larger than the liquid passages and which supplies liquid to the liquid passages. 30. The atomizing device according to claim 29, further characterized in that it additionally comprises a substantially flat filter layer having a filter for filtering the liquid supplied to the liquid conduit. 31. The atomizing device according to claim 24, further characterized in that it additionally comprises a filter for filtering the liquid supplied to the liquid channels. 32. The atomizing device according to claim 24, further characterized in that each liquid channel is adjacent to at least one gas channel. 33. - The atomizer device according to claim 24, further characterized in that it additionally comprises a plenum layer, which forms a plenum for the gas, according to which the first layer has holes for liquid that allow the liquid from the channels of liquid flows into the plenum, and the plurality of orifices formed in the second layer are holes for gas that extend through the first layer and are in fluid communication with the plenum. 34. The atomizer device according to claim 25, further characterized in that each of the liquid channels and the gas channels have a width of less than 200 microns. 35.- The atomizing device according to claim 25, further characterized in that each of the plurality of gas holes has a width smaller than 75 microns. 36.- The atomizing device according to claim 25, further characterized in that a width of a liquid channel is less than or equal to 50 times a smaller width of holes for liquid supplied by the liquid channel. 37.- The atomizing device according to claim 25, further characterized in that the liquid orifices are substantially slit-shaped, and a width of a liquid channel is less than or equal to 10 times a smaller width of liquid orifices supplied by the liquid channel. 38.- The atomizing device according to claim 25, further characterized in that a thickness of a hole for liquid is less than or equal to four times a width of the hole for liquid. 39.- The atomizer device according to claim 25, further characterized in that a width of a hole for gas is less than or equal to ten times an average Sauter diameter of drops, located at a distance, from a surface of the atomizing device , which is 10 to 100 times a hole width for gas, at an average gas velocity of 100 meters per second in the gas orifice. 40.- The atomizing device according to claim 25, further characterized in that for each of the plurality of liquid orifices, a ratio of a smaller atomizing perimeter of the liquid orifice to a cross-sectional area of the liquid orifice is at least 8,000 meters. 41.- The atomizing device according to claim 24, further characterized in that the first and second layers include an elemental semiconductor material. 42. - The atomizing device according to claim 41, further characterized in that the first and second layers include silicon. 43.- The atomizing device according to claim 24, further characterized in that the gas-liquid mass ratio is less than or equal to two. 44. A method for forming a gas aided atomizing device, comprising the steps of: forming a gas supply chain and a liquid supply chain in a substantially flat first layer and a substantially flat second layer; forming a plurality of holes in the second layer to form a spray; and connecting the first and second layers adjacently and parallel in such a way that the gas and liquid supply chains supply gas and liquid to form a spray in the plurality of orifices. 45. - The method according to claim 44, further characterized in that the first and second layers are made of silicon. 46.- The method according to claim 44, further characterized in that a plurality of gas supply chains and liquid supply chains are formed in the first and second layers and a plurality of holes are formed in the second layer, and the first and second layers are divided into a plurality of atomizing devices after being connected. 47.- A gas-assisted atomizing device consisting of: a first, substantially flat layer; and a second substantially flat layer parallel to the first layer, said second layer having a plurality of liquid orifices and a plurality of gas orifices formed therein, whereby the first and second layers form a liquid supply chain that includes a plurality of liquid channels that supply liquid to the plurality of liquid orifices and force liquid through the liquid orifices to form liquid streams, and a gas supply chain that includes a plurality of gas channels that supply gas to the plurality of gas orifices and force the gas through the gas orifices to atomize the liquid streams. 48.- A method for atomizing a liquid, which consists of the steps of: flowing a liquid on an atomizing edge of an orifice; flow a gas against the liquid to cause atomization of the liquid into droplets and to form detached ligaments of liquid having an average width smaller than 5 times a critical diameter Dmax of the droplets, wherein: Dmax = 8d / (CDPAUR2) in where: d: surface tension of the liquid; C ^: drag coefficient of a drop having a diameter equal to the critical diameter; PA: gas density; and UR: relative speed between the drop and the gas. 49. A method as claimed in claim 1, further characterized in that the engraving of said recordable material to form an orifice having an atomizing edge consists of micromachining said recordable material. 50.- A method as claimed in claim 1, further characterized in that the recordable material consists of silicon. 51. A method as claimed in claim 50, further characterized in that said recordable material consists of silicon carbide. 52. A method as claimed in claim 50, further characterized in that said recordable material consists of elemental silicon. 53. - A method as claimed in claim 50, further characterized in that said recordable material consists of orientation silicon (100). 54. - A method as claimed in claim 50, further characterized in that said recordable material consists of polycrystalline silicon. 55.- A method as claimed in claim 1, further characterized in that said recordable material consists of a semiconductor material. 56.- A method as claimed in claim 55, further characterized in that said recordable material consists of silicon. 57. A method as claimed in claim 55, further characterized in that said recordable material consists of germanium. 58.- An atomizing device according to claim 6, further characterized in that the first layer consists of a recordable material. 59.- An atomizing device according to claim 6, further characterized in that the first layer consists of silicon. 60.- An atomizing device according to claim 6, further characterized in that the first layer consists of a semiconductor material. 61.- An atomizing device according to claim 6, further characterized in that said atomizing device is micromachined. 62.- A method as claimed in claim 20, further characterized in that the first layer consists of silicon. 63. - A method as claimed in claim 20, further characterized in that the first layer consists of a semiconductor material. 64. - The atomizing device according to claim 24, further characterized in that the first layer consists of a recordable material. 65. - The atomizing device according to claim 24, further characterized in that the first layer consists of silicon. 66 - The atomizing device according to claim 24, further characterized in that the first layer consists of a semiconductor material. 67.- A method as claimed in claim 44, further characterized in that the first layer and the second layer consist of a gravel material and the formation of a gas supply chain and a liquid supply chain consists of engraving 31 material . 68. - The atomizing device according to claim 47, further characterized in that the first layer consists of a recordable material. 69 - The atomizer device according to claim 47, further characterized in that the first layer consists of silicon. 70.- The atomizer device according to claim 47, further characterized in that the first layer consists of a semiconductor material.