MXPA97004442A

MXPA97004442A - Organic devices emitters of light of colorsmultip

Info

Publication number: MXPA97004442A
Application number: MXPA/A/1997/004442A
Authority: MX
Inventors: S Sapochek Linda; E Burrows Paul; E Thompson Mark; R Forrest Stephen; M Mccarty Dennis
Original assignee: The Trustees Of Princeton University
Priority date: 1994-12-13
Filing date: 1997-06-12
Publication date: 1998-11-09

Abstract

An organic multicolored light emitting device (29) employs vertically stacked layers of double heterostructure devices made of organic compounds: the vertical stacked structure is formed on a substrate consisting of a glass base (37) having a transparent coating of ITO (35) or similar metal, the vertical stacked arrangement of three LED devices of double heterostructure (20, 21, 22), each made of a suitable organic material, is derived forward by batteries (30, 31, 32). ), a current flows from these batteries to anode terminals (40, 41, 42), and finally to the terminal cathode (43), as a result, light is emitted from each of the LEDs (20, 21, 22); stacking in such a way that the double heterostructure with the longest wavelength is over the top of the stack, this constitutes the red light emitter over the top with the wavelength device more cuts emitting blue light at the bottom, and the device that emits green light in the middle of the stack, the upper metal layer (26I) is transparent, followed by a metallic contact layer (26M), these layers form the layer ( 26), each subsequent one (26) is separated from the adjacent layer (26) by organic layers of EL (20E, 21E and 22E) and void conduction layers (20T and 22).

Description

ORGANIC DEVICES MULTI COLOR LIGHT EMITTERS FIELD OF THE INVENTION This invention relates to organic multi-color light emitting devices and very particularly to such devices for use in electronic visual presentations on flat panels.

BACKGROUND OF THE INVENTION Electronic visual presentation is an indispensable way in modern society to provide information and is used in television sets, computer terminals and in a multitude of other applications. No other medium offers its speed, versatility and interactivity. The well-known technologies of visual presentations include visual presentations of plasma, light-emitting diodes (LEDs), thin-film electroluminescent visual presentations, etc. Primary non-emissive technology makes use of the electro-optical properties of a class of organic molecules known as liquid crystals (LCe) or liquid crystal displays (LCDs). LCDs operate in a highly reliable manner but have relatively low contrast and resolution, and require high-power backlighting. Active matrix visual presentations employ a disposition of transistors, each capable of activating a single LC image element. There is no doubt that the technology regarding visual presentations of flat panel is a significant issue and is progressing continuously. See an article entitled "Flat Panel Displays," Scientific American, March 1993, pgs. 90-97 by S. U. Depp and Ul. E. Howard. In that article, it is indicated that it is expected that by 1995 only visual panel presentations will not form a market of between $ 5 and $ 5 billion. A desirable factor for any visual presentation technology is the ability to provide a high-resolution full-color visual presentation at a good light level and at a competitive price. Visual color presentations operate with the three primary colors red (R), green (G) and blue (B). There has been considerable progress in the demonstration of red, green and blue emitting devices (LEDs) using thin film organic materials. These thin film materials are deposited under high vacuum conditions. Such techniques have been developed in many places around the world and work is being done with this technology in many research facilities. Currently, the most favored highly efficient organic emissive structure is referred to as the double heterostructure LED which is shown in Figure IA and is designated as a prior art. This structure is very similar to inorganic, conventional LEDs that use materials such as GaAs or InP. In the device shown in Figure 1A, a glass support layer 10 is coated with a thin layer of indium tin oxide (ITO) 11, layers 10 and 11 forming the substrate 8. A layer is then deposited predominantly hole transporter (HTL) 12, thin (100-500 fi), organic, on layer 11 of ITO. Shown on the surface of the HTL layer 12 is a thin emission (EL) 13 layer (typically, 50fl-100A). If the layers are too thin there may be a lack of continuity in the film and the thicker films tend to have a high internal resistance that requires a higher power operation. The emissive layer (EL) 13 provides the site of recollection for electrons injected from an electron transport layer (ETL) 14 of 100-3 OOfi thick with holes from the HTL 12 layer. The ETL material is characterized by its mobility is considerably higher than that of holes. Some examples of ETL, EL and HTL materials according to the prior art are disclosed in U.S. Patent No. 5,294,870 entitled "Organic Electrolurninescent Multicolor Image Display Device", issued March 15, 1994 to Tang et al. The EL 13 layer is often contaminated with a highly fluorescent dye to adjust the color and increase the electrolucent efficiency of the LED. The device is completed as shown in Figure 1A by depositing metal contacts 15, 16 and the upper electrode 17. The contacts 15, 16 are typically manufactured from indium or Ti / Pt / Au. The electrode 17 is often a double layer structure consisting of an alloy such as Mg / Ag 17 'which makes contact directly with the organic ETL 14 layer and a metal layer 17"with high work function such as gold ( Au) or silver (Ag) on Mg / Ag. The thick metal 17 '' is opaque. When the appropriate deviation voltage is applied between the upper electrode 17 and the contacts 15 and 16, the emission of light occurs through the glass substrate 10. An LED device of Figure IA has luminescent efficiencies of 0.05% external 4% depending on the color of emission and its structure. Another known organic emissive structure referred to as a single heterostructure is shown in Figure IB and designated as prior art. The difference of this structure relative to that of Figure IA is that the EL layer 13 also serves as the ETL layer, eliminating the ETL layer 14 of Figure IA. However, the device of Figure IB, for efficient operation, must incorporate an EL 13 layer having good electron transport capacity, or otherwise a separate ETL layer 14 must be included as shown for the device of the Figure IA. Currently, the highest efficiencies in green LED's have been observed. In addition, excitation voltage of 3 10 volts has been achieved. These advanced and very promising demonstrations have used amorphous or highly polycrystalline organic layers. These structures undoubtedly limit the mobility of the load conveyors through the film, which limits the current and increases the excitation voltage. The migration and growth of crystallites that originates from the polycrystalline state is a pronounced time of failure in such devices. Degradation of electrode contacts is also a pronounced failure mechanism. Still another known LED device is shown in Figure IC, which illustrates a typical cross-sectional view of a single-layer LED (polymer). As shown, the device includes a glass support layer 1, coated by a thin layer 3 of ITO, to form the base substrate. The thin organic layer 5 of spin-coated polymer, p >For example, it is formed on ITO layer 3 and provides all the functions of the HTL, ETL and EL layers of the previously described devices. A metal electrode layer 6 is formed on the organic layer 5. The metal is typically Mg, Ca or other metals conventionally used. ? e describes an example of a multi-color electroluminescent image visual display device employing organic compounds for the light emitting image elements in Tang et al., U.S. Patent No. ,294,870. This patent discloses a plurality of light emitting image elements containing an organic medium for emitting blue light in the regions of the blue emission image subelements. Fluorescent means are laterally separated in the region of the blue emission image element. The fluorescent media absorbs the light emitted by the organic medium and emits red and green light in different regions of the image subelement. The use of doped materials with fluorescent dyes to emit green or red light with blue light absorption from the blue image subelement region is less efficient than direct formation by means of green or red LEDs. The reason is that the efficiency will be the product of (quantum efficiency for EL) * (quantum efficiency for fluorescence) * (l-transmittance). Thus, an inconvenience of this visual presentation is that different laterally separated image subelement regions are required for each color emitted.

BRIEF DESCRIPTION OF THE INVENTION It is an object of the present invention to provide a multi-color organic light emitting device which employs various types of organic electroluminescent media, each one emitting a different color. It is a further object of this invention to provide such a device in a multiple color and high definition visual presentation in which the organic media are exposed in a stacked configuration such that any color can be emitted from a common region of the display. It is another object of the present invention to provide a three-color light emitting organic device which is extremely reliable and relatively inexpensive to produce. It is an additional objective to provide such a device which is put into practice by the development of organic materials similar to those materials used in the electroluminescent diodes, to obtain an organic LED that is highly reliable, compact, efficient and requires low excitation voltages for s? use in visual presentations of RGB. In one embodiment of the invention, a multi-color light emitting device (LED) structure comprises at least one first and second organic LEDs stacked one on top of, and preferably three, to form a layer structure, each LED being separate one from the other by a transparent conductive layer to allow each device to receive a separate bypass voltage to emit light through the stack.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. Ifl is a cross-sectional view of an organic double-heterostrictor light emitting (LED) device, typical according to the prior art. Figure ID is a cross-sectional view of a light emitting device (LED), of a single, organic heterostructure, typical according to the prior art. Figure IC is a cross-sectional view is a known structure of LED, single-layer polymer according to the prior art. Figures 2A, 2B and 2C are cross-sectional views of a three-color image element, integrated which uses light emitting (LED), organic crystalline devices, respectively, according to the embodiments of this invention, respectively. Figures 3-11 show a variety of organic compounds which can be used to understand the active emission layers to generate the various colors. Lae FIGS. 12 (A-E) illustrate a shade covering process for the manufacture of a multi-color LED according to the invention. Figures 13 (A-F) illustrate a dry etching process for the manufacture of the multiple color LED according to the invention. Figure 14A shows a multiple color LED of an embodiment of this invention configured to facilitate packing thereof. Figure 14B shows a cross-sectional view of an hermetic package for another embodiment of the invention. Figure 14C is a cross-sectional view taken along 14C-14C of Figure 14B. Figure 15 is a block diagram showing a visual display of RGB which uses LED devices according to this invention together with the set of excitation circuits of the display. Figure 16 shows an LE.D device of another embodiment of the invention that extends the number of LEDs stacked to N, where L is an integer 1, 2, 3, N.

DETAILED DESCRIPTION OF THE INVENTION Figure IA has been described and is an organic light emitting device of double heterostructure, according to the prior art. The basic construction of the device of Figure IA is used in this invention as will be described. Referring to Figure 1A, the schematic cross-section of an integrated, highly compact RGB image element structure that is implemented by the organic layers developed or vacuum deposited is shown in one embodiment of the invention. Based on the ability to develop organic materials on a wide variety of materials (including ITO metal), a stack of dual heterostructures (DH) of LEDs 20, 21 and 22 can be constructed in one embodiment of the invention. For illustrative purposes, the LED 20 e considers in a lower portion of the stack, the LED 21 in an intermediate position of the stack and the LED 22 in a top position of the stack, in the example of Figure 2A. The stack is also shown being oriented vertically in Figure 2A, but the LED can be oriented in any other way. In other embodiments, a stack of single heterostructure (SH) LEDs (see Figure IB) or a stack of polymer-based LED devices (see Figure IC) are viable alternatives to DH LED's, with SH devices equally viable as DH devices for light emieoree. Also, the SH and DH devices comprising a combination of light-emitting, vacuum-deposited and polymeric materials, are considered to be within the spirit and scope of this invention. Each structure of the device as device 20, consists of an HTL 20H layer deposited in vacuum or developed or deposited in some other way on the surface of an ITO layer 35. An upper layer ETL 20T is superimposed on an EL layer 20E between the previous one and the HTL 20H layer, for example, shown in the construction of the device of Figure 2A. The ETL 20T layer and other ETL layers to be described are composed of talee organic materials such as M (8-hydroxy.quinolate), (M = metal ion, - n = 2-4). Some examples of other suitable organic ETL materials can be found in U.S. Patent No. 5, 249, 870 assigned to Tang et al. Formed in the upper part of the ETL 20T layer, it has a thin, semitransparent 26M metal layer with a low working function (preferably, <4 eV) which has a thickness typically less than 50ñ. Some suitable materials proposed include Mg, Mg / Ag, and As. Laid on top of the metal layer 26M is another conductive, thin, transparent ITO layer 261. (For convenience herein, the double layer structure of the metal layer 26M and the ITO layer 261 are referred to as layers 26 of ITO / etal). Each of the double heterostructure devices 20, 21 and 22 has a lower layer HTL formed for a transparent conductive layer of 261 or 35 of ITO. Immediately one EL layer is deposited and then another ETL layer. Each of the HTL, ETL, ITO, and The metal and organic layers are transparent because of their composition and minimum thickness. Each HTL layer can be 50-1000fi thick; and each layer 261 and 35 of ITO can be 1000 / 4000fi thick. For optimal operation, each of the layers should preferably be held toward the lower ends of the previous scales. In this way, each LED 20, 21 and 22 (excluding the ITO / rpetal layers) is preferably close to the 200fi of groeor. If the SH LED devices are used to provide the LED's, 21, 22, instead of the DH LED devices, the ETL and EL layers are provided by a single layer, such as a layer 13, as previously described for the SH of the Figure ID.

This layer 13 is typically alkynolate. This is shown in Figure 2B, where the layers EL 20E, 21E and 22E, respectively, they provide the functions of the layers both EL and ETL. However, an advantage of the DH LED's stack of Figure 2A, with respect to the stack of SH LED's of Figure 2B, is that the DH LED's stack allows a generally thinner construction with high efficiency. In Figures 2A and 2B, although the rentros of each of the LED's are separated from each other, the total light beam of each device is substantially coincident between the LEDs 20, 21 and 22. While the light beams are coincident in the concentric configuration, the emitting or non-emitting device closest to the glass substrate will be transparent to the device by the emitting devices further away from the glass sub-layer. However, the diodes 20, 21 and 22 do not need to be separated from one another and can alternatively be stacked concentrically one on top of the other, over which the light beam of each device is completely coincident with the others. A concentric configuration of Figure 12E is shown which will be described below with respect to the methods of manufacturing the devices. Note that there is no difference in function between the separated and concentric configurations. Each device emits light through the glass substrate 37 in a subetanially omnidirectional pattern. With the tensions in derivation, the three LEDs in the stack 29 are conserved to provide desired color and brightness of emission for a particular image element at any time. In this way, each LED co or 22, 21 and 20 can be excited simultaneously, with the beams as red, green and blue, respectively, for example, directed through and visible by means of the transparent layers, as shown schematically in Figures 2A and 2B. Each DH structure 20, 21 and 22 is able, with the application of a suitable excitation voltage, to emit a light of different color. The LED 20 of double heterostructure emits blue light. The LED 21 of double heterostructure emits green light, while the LED 22 of double heterostructure (DH) emits red light. Different combinations or individual forms of LEDs 20, 21 and 22 can be activated to selectively obtain the desired color of light for the respective image element partially dependent on the magnitude of the current of each of the LEDs 20, 21 and 22. In the example of Figures 2A and 2B, the LEDs 20 21 and 22 are derived directly by the batteries 32, 31 and 30, respectively. The current flows from positive terminal of each battery 32, 31 and 30, to the node terminal 40, 41, 42, respectively, of its associated LEDs 20, 21 and 22, respectively, through the layers of each respective device, and from the terminals 21, 21 and 43 which serve as cathode terminals to the negative terminals of each battery 32, 31 and 30, respectively. As a result, the light of each of the LEDs 20, 21 and 22 is emitted. The dielectric LEDs 20, 21 and 22 are made selectively exitable including means (not shown) for selectively switching the batteries 32, 31 and 30, respectively, connecting and disconnecting from s? respective LED. In the embodiments of the invention, with respect to Figures 2A and 2B, the upper contact 261 ITO for the LED 22 is transparent, making the three-color device shown for upward-facing visual presentation applications useful. However, in another embodiment of the invention, an upper contact 261 is formed from a coarse metal, such as either Mg / Ag, In, Ag, or Au, to reflect the light emitted upwardly back through of substrate 13, to substantially increase the efficiency of the device. The total efficiency of the device can also be increased by forming thin film, dielectric, multi-layer coating between glass substrate 37 and ITO layer 35, to provide an anti-reflective surface. Three sets of antireflective layers are required, one to form the antireflection coating at each wavelength emitted from the various layers. In another embodiment, the device of Figure 2A is connected in an opposite or inverted manner, to provide light emission from the top of the stack instead of the bottom like the previous one. An example of an inverted structure, with reference to Figure 12, is to replace the ITO layer 35 with a mirror layer, mirror, reflective. The blue LED 20 is then provided by exchanging the HTL 20H layer and the ETL 20T layer, the EL 20E layer remaining interleaved between the last two layers. In addition, the metal contact layer 26M is now deposited on top of the ITO layer 261. Each of the portions of the green LED 21 and the red LED 22 of the stack are constructed with inverted layers (the HTL and EL layers of each are exchanged, followed by inverting the metal and ITO layers) as described for LED 20 inverted blue. Note that in the inverted structure, the blue device 20 must be in the upper part and the red device 22 in the lower part. Also, the polarities of the batteries 30, 31 and 32 are reversed. As a result, the current flow through the devices 20, 21 and 22, respectively, is in the opposite direction with respect to the embodiment of Figure 2A, when it is derived directly to emit light. The device in the cross-section view has a profile such as step or stair, in this example. The transparent contact areas 261 (ITO) allow separate derivation of each image element in the stack and the material can further be used as a stop of the engraving during the process steps. The separate derivation of each DH LED structure 20, 21 and 22 allows adjustment of the cut zones of the output of the image element to any of the various desired colors of the visible spectrum as defined by the CI6 chromaticity standard (Commission Internationale de l'Eclairage / International Commission on Lighting). The blue emission LED 20 is placed at the bottom of the stack and is the largest of the three devices. The blue is at the bottom because it is transparent to red and green light. Finally, the sectioning of the materials using the ITO / metal transparent layers 26 facilitates the fabrication of this device as will be described. They are the eingular membrane members of the vacuum development and the manufacturing processes associated with the organic compounds which make the LED devices of the image element shown in Figures 2A, 2B and 2C possible. The vertical arrangement of the layers shown in Figures 2A, 2B and 2C takes into account the three-color image elements for the smallest possible area, making them ideal therefore for high definition visual presentations. As seen in Figures 2A, 2B and 2C, each DH structure 20, 21 and 22 of the devices can emit light designated by arrows B, G and R, respectively, either simultaneously or separately. Before the light is emitted it is substantially of the entire transverse portion of each LED 20, 21 and 22, according to which the arrows R, G and B are not repreecious of the width of the real emitted light, respectively. In this way, the addition or subtraction of the colors R, G and B is integrated by the eye, causing different colors and shades to be perceived. This is well known in the field of color vision and the color of visual presentations. In the off-center configuration shown, the red, green and blue light beams are substantially coincident. If the devices are made sufficiently small, ie approximately 50 microns or less, any of a variety of stacking colors can be produced. However, it will look like a color that originates from a single image element. The organic materials used in the DH structure are dewooled one on top of the other or are stacked vertically with the device 22 with the largest wavelength indicating the red light on top and the element 20 with the shortest wavelength indicator of blue light on the bottom. In this way, the absorption of light in the image element or in the devices is minimized. Each of the DH LED devices is separated by the ITO / etal layers 26 (specifically, the semi-transparent rnetal layers 26M and the indium-tin oxide layers 261). The ITO layers 261 can also be treated with metal deposition to provide different contact areas on the exposed ITO surfaces, such as the contacts 40, 41, 42 and 43. These contacts 40, 41, 42 and 43 are manufactured from indium, platinum, gold, silver or alloys such as Ti / Ot / Au, Cr / Au, Mg / Ag, for example. The techniques for the deposition of contacts using conventional metal deposition or vapor deposition are well known. The contacts, such as 40, 41, 42 and 43, allow the separate derivation of each LED in the stack. The significant chemical differences between the organic LED materials and the transparent electrodes 261 allow the electrodes to act as layers for etch retention. This allows selective engraving and exposure of each image element during the procedure of the device. Each LED 20, 21, 22 has its own derivative voltage source, in this example schematically shown as the batteries 32, 31 and 30, respectively, which allows each LED to emit light. It is understood that suitable templates can be employed instead of the batteries 30, 31, 32, respectively. As it is known, the LED requires a minimum threshold attention to emit light (each DH LED) and therefore this activating voltage is shown schematically by means of the battery symbol. Layers 20E, 21E, 22E EL can be made from organic compounds selected according to their ability to produce all primary colors and intermediate colors thereof. Organic compounds organically selected from trivalent complexes of metal quinolates, trivalent complexes of bridged metal quinolates, quivalent complexes of tin-metal complexes, complexes of metal-acetyl-acetone complexes, bidentate metal ligand complexes, bisphosphonates, divalent metal maleonitrilodithiolate complexes, molecular ce transfer complexes, aromatic and heterocyclic polymers and mixed rare earth chelates, as will be described herein below. The trivalent complexes of metal quinolates are represented by the structural formula shown in Figure 3, where M is a trivalent metal ion selected from groups 3-13 of the periodic table and the lanthanides. Al + 3, Ga + 3 and In + 3 are the preferred trivalent ions of rnetal. The R in Figure 3 includes hydrogen, substituted and unsubstituted alkyl, aryl and heterocyclic groups. The alkyl group can be straight or branched chain and preferably has 1 to 8 carbon atoms. Some examples of suitable alkyl groups are methyl and ethyl. The preferred aryl group is phenyl and in some examples the heterocyclic group for R include pyridyl, imidazole, furan and thiophene. The alkyl, aryl and heterocyclic groups of R p >they can be substituted at least with a substituent selected from aryl, halogen, cyano and alkoxy, preferably having from 1 to 8 carbon atoms. The preferred halogen is chlorine. Group L of Figure 3 represents a ligand that includes picolylmethyl ketone, the unsubstituted and unsubstituted salicylaldehyde (for example salicylaldehyde substituted with barbituric acid), a group of the formula R (0) C0- wherein R is as defined above , halogen,? n group of the formula RO- wherein R is as defined above, and quinolates (for example 8-hydroxyquinoline) and derivatives of the miemoe (for example q? inolatoe substituted with barbituric acid). Preferred complexes covered by the formula shown in Figure 3 are those in which M is Ga + 3 and L is chlorine. Such compounds generate blue emission. When M is Ga + 3 and L is methyl carboxylate, ee produce complexes that emit in the region of blue to blue / green. A yellow or red emission is expected by using either n-substituted salicylaldehyde with barbituric acid or an 8-hydroxyquinoline substituted with barbituric acid for the L group. Green emissions can be produced by using a quinolate for the L group. Trivalent complexes of Metal-bonded quinolates that can be employed in the present invention are shown in Figures 4A and 4B. These complexes generate green emies and exhibit superior environmental stability compared to the trisquinolates (complexes of Figure 3 wherein L is a quinolate) used in the devices according to the prior art. The trivalent metal ion M used in the complexes is as defined above being preferred Al + 3, Ga + 3 or In + 3. The group Z shown in Figure 4A has the formula SiR where R ee as defined above. Z can also be a group of the formula P = 0 which forms a phosphate.

The divalent metal complexes of Schiff base include those shown in Figures 5A and 5B where i is a divalent metal selected from groups 2-12 of the periodic table, preferably Zn (See, Y. Hanada, et al., " Blue Electrolu inescence in Thin Films of Axomethin-Zinc Complexes ", -.aponeee Journal of Applied Physics Vol. 32, pp. L511-L513 (1993). The group R1 was selected from among the structural formulas shown in Figures 5A and 5B. The group R1 is preferably coordinated to the metal of the complex via the amine or nitrogen of the pyridyl group X is selected from hydrogen, alkyl, alkoxy, each having 1 ß carbon atoms, aryl, io n heterocyclic group, The complex is phenyl, and the preferred heterocyclic group is selected from pyridyl, imidazole, furan, and thiophene.The X groups affect the solubility of divalent metal-Schiff complexes in organic solvents. div The particular chiff metal baee metal shown in Figure 5B emits at a wavelength of 520 n. The tin metal (iv) complexes employed in the present invention in the EL layers generate green emissions. Included among these complexes are those having the formula SnL.i2L22 wherein H is selected from salicylaldehydes, salicylic acid or quinolones (for example 8-hydroxyqoline). L2 includes all of the groups previously held for R except hydrogen. For example, the metal complexes of 00 tin (iv) where L1 is a quinolate and L2 is phenyl have an emission wavelength (cn.) of 504nm, resulting in the wavelength of photol measurements? inoscence in the solid state. The tin metal (iv) complexes also include those having the structural formula of Figure 6 wherein Y is sulfur or NR2 wherein R2 is selected from hydrogen and alkyl and aryl, substituted or unsubstituted. The alkyl group can be straight or branched chain and preferably has 1 to 8 carbon atoms. The preferred aryl group is phenyl. Substituents for the alkyl and aryl groups include alkyl and alkoxy having from 1 to 8 carbon atoms, cyano and halogen. L3 may be selected from alkyl, aryl, halide, q? Inolates (e.g., 8-hydroxyquinoline), salicylaldehyde, salicylic acid and maleonitrilodithiolate ("mnt"). When A is S and Y is CN and L3 is "rnnt", an emission between red and orange is expected. The M (acetylacetonate) 3 complexes shown in Figure 7 generate a blue emission. The metal ion M is selected from the trivalent metals of groups 3-13 of the periodic table and the lanthanides. The preferred metal ions are Al * 3, Ga + 3 and In + 3. The group R in Figure 7 is the same as defined for R in Figure 3. For example, when R is methyl and M is selected from Al + 3, Ga + 3 and In + 3, respectively, the wavelengths resulting from the measurements of the photolminoscence in the solid state which is 15m / 445 »» and 457n », respectively, (See 3. Kido et al," Organic Electrolu inescent Devices using Lanthanide Cornplexes ", Journal of Alloye and Compound, Vol. 92, pp. 30-33 (1993). The bidentate metal complexes employed in the present invention generally produce blue emissions. Such complexes have the formula MDL * 2 where M is selected from trivalent metalee of groups 3-13 of the periodic table and thelaniants. The preferred metal ions are: A1 + 3, Ga + 3, In + 3 and Sc + 3. D is a bidentate ligand examples of which are shown in Figure SA. More specifically, the bidentate ligand D includes 2-picolylcetonee, 2-quinaldylcetones and 2- (or phenoxy) pyridinetones wherein the groups R in Figure 8A as defined above. Preferred groups for L * include acetylacetonate; compounds of the formula 0R3R wherein R3 is selected from Si, C and R is selected from the same groups as described above; 3, 5-di (t-b?) - phenol; 2, 6-di (t-b?) - phenol; 2, 6-di (t-bu) -cresol; and H2 Bpz2, showing the last comp? estoe in lae Figures 8B-8E, respectively. By way of example, the wavelength (mm) resulting from the photoluminescence measurement in the solid state of aluminum (picolimethyl ketone) bis C2, 6-di (t-b?) - phenoxide] is 420 nm. The creasol derivative of the above compound also measured 420nm. The (picolylmethyl ketone) bis (0SiPh3) of aluminum and the (4-methoxy-picolylmethyl ketone) bis (acetylacetonate) of scandium each measured 433nm, while the C2- (0-phenoxy) pyridine3 bis C2, 6-di (t- bu) phenoxide] of aluminum measured 450nm. The other components of the invention are another clause of compunds that can be used in accordance with the present invention for the EL layers. The bisphosphonates are represented by the general formula: 2 »(03P-organic-P03) and is a metal ion. It is a tetravalent metal ion (for example Zr + *, Ti + ¿and Hf + 4) when X and Y are both equal to 1. When X is 3 and is 2, the metal ion M is in the divalent state and includes, for example, Zn + 2, C? +2 and Cd + 2. The term "organic" as used in the above formula eignifies any aromatic or heterocyclic fl amenomer compound that can be defoaned with foefonate groups. Preferred biefonephonate compounds include phenylenevinylene bisphonophones such as those shown in Figures 9A and 9B. Specifically, Figure 9A shows β-styrenyl-ethexyl bisphophonates and Figure 9B shows 4'-phenyl divinyl phosphonates wherein R is as previously described and R * is selected from unsubstituted and unsubstituted alkyl groups. , which preferably have 1-8 carbon atoms, and aryl. The alkyl groups are methyl and ethyl. The preferred aryl group is phenyl. Preferred silicates for the alkyl and aryl groups include at least one substituent selected from aryl, halogen, cyano, alkoxy, preferably having from 1 to 8 carbon atoms. The divalent aleonitrilodithiolate ("mnt") metal complexes have a structural formula shown in Figure 10. The divalent metal ion M3 includes all the metal ions having a +2 charge, preferably transition metal ions such as Pt + t Zn + 2 and Pd + 2. ? i is selected from cyano and substituted or unsubstituted phenyl. Preferred eubititutents for phenyl are selected from alkyl, cyano, chloro and 1,2,2-tricyanovinyl. L5 represents a group that has no charge. Preferred groups for L.s include P (0R) 3 and P (R) 3 wherein R is co or described above and L5 can be a chelating ligand such as, for example, 2, 2'-dipyridyl; phenanthroline; 1,5-cyclooctadiene; or bis (diphenylphosphino) methane. Table 1 shows some illustrative examples of the emission wavelengths of various combinations of these compounds, obtained from CE. Johnson et al., "Lu inescent Iridium (I), Rhodium (I), and Platin? M (II) Dithiolate Complexes", Journal of the American Chemical Society, Vol. 105, pg. 1795 (1983).

TABLE I COMPLEX WAVE LENGTH * CPlatinoil, 5-c? Clooctad? Na) (mnt) l 560nrn rPlatmo (P (0Et) 3) 2 (rnnt)] 566nrn CPlat? No (P (0Ph) 3) 2 (rnnt) l 605nm CPlat? No (b? S (d? Phen? Lfoef? No) methane) (mnt) -I 610nm CPlat? No (PPh3) 2 (rnnt)] 652nm «• Wavelength resulting from the measurement of the photoLuminence in the solid state The molecular charge transfer complexes employed in the present invention for the EL layers are those that include an electron receptor structure in complex with an electron donor structure. Figures 11A-11E show a variety of suitable electron receivers that can form a load transfer complex with one of the electron donating structures shown in FIGS.

Figures 11F-11J. The group R as shown in Figures HA and 11H is the same as described above. Films are prepared from these charge transfer materials either by evaporating donor and cell receptor molecules separated on the substrate, or by directly evaporating the previously made charge transfer complex. The emission wavelengths can vary from red to blue, depending on which receptor is coupled with which donor. Aromatic and heterocyclic com pound polymers that are fluorescent in the solid state ee can be employed in the present invention for EL-coatings. Such polymers can be used to generate a variety of different color emissions. Table II provides examples of suitable polymers and the color of their associated emissions.

TABLE II POLYMER COLOR OF THE EMISSION Poly (para-phenylenevinylene) blue to green poly (dialkoxyphenylenevinylene) red / orange poly (thiophene) red poly (phenylene) blue poly (phenylacetylene) yellow to red poly (N-vinylcarbazole) blue The mixed chelates of earth rare for s? Use in the present invention includes any elements of lantharides (for example La, Nd,?, Eu, and Tb) linked to a bidentate or heterocyclic aromatic ligand. The bidentate ligand serves to transport carriers (for example electrons) but does not absorb the energy of the emission. In this way, bidentate ligands serve to transfer energy to the metal. Some examples of ligand in mixed rare earth chelates include salicylaldehyde and derivae of loe miemoe, ealicylic acid, quinolates, Schiff base ligands, acelacetonates, phenatroline, bipyridine, quinoline and pyridine. The hollow-supplying layers 20H, 21H and 22H can be constituted of a porphorinic compound. In addition, the hole transporter layers 20H, 21H and 22H may have at least one tertiary vortex-carrying aromatic mine which is composed which contains at least one trivalent nitrogen atom which is bonded only to the carbon atoms. , so one of which is a member of an aromatic ring. For example, the aromatic tertiary amine can be an arylamine, such as a monoarylamine, diarylamine, triallylamine or a polymeric arylamine. Other suitable aromatic tertiary amines, as well as all porphyrinic cornp? Eetoe, are described in Tang et al., U.S. Patent of E.U.A. No. 5,294,870, the teachings of which are hereby incorporated by reference in their entirety, provided that any such teachings are not inconsistent with any teaching herein. The fabrication of a three-color stacked organic LED picture element according to the present invention or any of two methods can be effected: A shade covering process or etching procedure in Eeco. The two procedures to be described suppose, for illustrative purposes, a double-heterostructure LED construction, that is, that it uses only one layer of organic substrate for each layer of active emieion, with light emerging from the lower surface of the glass eubrubber. . It should be understood that organic LED's of multiple heterojunction having multiple layers of organic compounds for each active emission layer and / or inverted structures (emerging light from the upper surface of the stack) can also be manufactured by one skilled in the art by making slight modifications to the described methods. The steps of the shadow covering process according to the present invention are illustrated in Figures 12 (A-E). A glass substrate 50 to be coated with an ITO layer 52 is first cleaned from submerging the substrate 50 for about 5 minutes in trichlorethylene or similar boiling chlorinated hydrocarbon. This is followed by rinsing in acetone for about 5 minutes and then in methyl alcohol for about 5 minutes. The substrate 50 is then vented to dry with ultra high purity nitrogen (UHP). All the cleaning solvents that are used are preferably of "electronic type". After the purification procedure, the layer 52 of ITO is formed on the vacuum substrate 50 using conventional methods of electronic purification or electronic emission. A blue emission LED 55 (see Figure 12B) is then fabricated on the ITO layer 52 as follows. A shadow mask 73 is placed in predetermined outer portions of the ITO layer 52. The shadow mask 73 and other mascarae during the shadow coating process must be introduced and removed between the process steps without exposing the device to moisture, oxygen and other contaminants that would reduce the operational duration of the device. This can be done by changing the shell in an environment charged with nitrogen or an inert gas, or by placing the nuts remotely on the surface of the device in the vacuum environment by remote control techniques. By opening the mask 73, a 50-lOOfl gap transport layer (HTL) of 50-lOOfl and a 50-200fi blue emission layer (shown in Figure 12B) are sequentially deposited without air-conditioning, i.e. -ai empty. An electron transport layer (ETL) is then deposited having preferably a thickness of 50-lOOOfi over EL 56. The ETL 58 is then finished with a semitransparent metal layer 60M which may preferably consist of a 10% Ag layer. in 90% Mg or another layer of metal or metal alloy of low working function, for example. The layer 60M is very thin, preferably less than 100fi. Layers 54, 56, 58 and 60M can be deposited by any of a number of conventional directional deposition techniques such as vapor phase deposition, ion beam deposition, electron beam deposition, electron deposition and laser cutting. An ITO contact layer 601 of approximately 1000-40008 thickness is then formed on a metal layer 60M by means of conventional electronic deposition methods or electronic beams. For the convenience of the preemer, the interleaving layers 60M and 601 will be transferred and displayed as a single layer 60, which is substantially the same as the layer 26 of FIG. 2. The new metal portion 60M The low working function of each layer 60 makes contact directly with the ETL layer beneath it while the ITO layer 601 makes contact with the HTL layer immediately above it. Note that the entire manufacturing procedure of the device is carried out in the best way by maintaining the vacuum all the time without affecting the gap between the steps. Figure 12C shows an LED 65 which emits green light and which is manufactured above the layer 60 using substantially the same shade and deposition coding techniques as those used for manufacturing the LED 55 which emits blue light . The LED 65 comprises the HTL 62, the green emission layer 64 and the ETL 66. The second thin 60M metal layer is deposited (<100fi thick, thin enough to be semitransparent but not eminently thin to lose electrical continuity) on the ETL 66 layer, from another ITO layer 601 of 1000-400GA thick to form a second interlayer layer 60. Shown in Figure 12D is an ELD 75 of red emission manufactured on layer 60 (on the 601 to be specified), which method is used to cover the covering of metal and metal deposition. The red emitting LED 75 consists of an HTL 70, an EL 73 of red emission and an ETL 74. An elongated layer 60 is then formed of intercalation of the layers 601 and 60M on the LED 75. As described above for the modality of Figure 2, similarly, the upper transparent ITO layer 601 can be replaced in an alternative embodiment with an appropriate metal electrode which also serves to operate co or mirror to reflect upwardly directed light back through the substrate. , thereby reducing the light losses from the upper part of the device. Each layer ETL 74, 66 and 58 has a groeor of 50-200A; each layer HTL 54, 62 and 70 ee of 100-500fi of groeor; and each layer EL 56, 64 and 72 ee 50-1000fi thick. For optimal brightness and efficiency, each of the layers including the ITO / etal layers should be kept as close as possible to the lower end of the anterior layers. The formation of the electrical contacts 51 and 59 on the ITO layer 52 and the electrical contacts 88, 89, 92, 94 and 96 on the ITO portion 601 of the ITO / metal layers 60 is preferably performed deep in? I just step. These electrical contacts can be indium, platinum, gold, silver or combinations such as Ti / Pt / Au, Cr / Au or Mg / Ag. They can be deposited by vapor deposition or other suitable techniques for the deposition of metals after covering the rest of the device. The final step in the shade covering process covers the entire device with an insulating layer 97 as shown in Figure 12E, with the exception of all metal contacts 51, 59, 88, 89, 92, 94 and 96 that are protected. The insulating layer 97 is impermeable to moisture, oxygen and other contaminants thereby preventing contamination of the LEDs. The insulating layer 97 can be SiO2, or nitrite of silicon such as Si2N3 or another electron deposited, electronically position or CVD enhanced pyrolytic isolate or enhanced with plasma. The deposition technique used must not raise the device temperature above 120 ° C since these high temperatures can degrade the characteristics of the LED. The dry etching process for manufacturing the stack of the LED according to the invention is illustrated in Figures 13 (A-F). Referring to FIG. 13A, a glass substrate 102 of the same is first debugged as in the above-described coating method described above. It is depoeited after an ITO layer 101 on the glass sub-layer 102 in a vacuum using conventional methods of electronic depoeition or electronic beams. An HTL 104 is then deposited with a blue-viewing EL 105, an ETL 106 and an intercalation layer comprising the metal layer 107M and the cap > to 1071 of ITO, all of them generally from the same thicknesses as in the shade covering process, on the entire surface of the ITO layer 101, using either conventional vacuum position techniques or in the case of spin coating or storing polymers. The ITO / metal interlayer layer 107 consists of a metal layer 107M with a low working portion, with a thickness of 100 μl deposited directly on the ETL layer 106 and an ITO layer 1071 of 1000-40008 thickness on the layer. 107M metal. Especially the upper surface of the ITO layer 1071, a layer of 1000fi-2000fi thickness of cover material 108 of silicon nitride or silicon dioxide is deposited using CVD of low temperature plasma. A photoreactive photographic layer 109 such as HPR 1400J is spun onto layer 108 of silicon nitride. As shown in Figure 13B, the outer portions 110 (see Figure 13A) of the photoresist layer 109 are exposed and removed using standard photolithographic procedures. The external positions 110 exposed correspond to the areas a in which the lower layer 101 of ITO has to be exposed and electrically contacted. Referring to FIG. 13C, the outer regions 111 (defined in FIG. 13B) of the layer 108 of silicon nitride corresponding to the photoresist areas are removed, using a CF-j: 02 plasma afterwards, using a crushing technique. ions? another plasma etch, the exposed outer positions of the ITO / metal layers 1071 and 107M are removed. It is employed after an O2 plam to sequentially remove the corresponding exposed outer portion of the ETL layer 106, the EL layer 105 and the HTL layer 104, respectively, and also to remove the photoresist layer 109 shown in Figure 13B. Finally, a CF4: 02 plasma is again applied to remove mask 108 from silicon nitride, with the resulting configuration of the blue emission LED shown in Figure .1.3B. The same sequence of the steps of the etching procedure in eeco is used to make the green LED 115 on top of the blue emitting LED, except that it overlaps as shown, followed by a photoresist mask 113 as shown in the Figure 13E to cover the outer portion of the ITO layer 101. Then the deposition of the HTL 114 layer, the EL 116 green emulsion layer etc. is carried out. (see Figure 13F). The same photolithography and etching techniques used for the manufacture of blue emission LEDs are then used to complete the formation of the green emitting LED 115. The red illumination LED 117 is formed in the eonda of the green emission LED, using euberant in the same way as the etching procedure in eeco. A passivation layer 119 similar to layer 97 of FIG. 12E is deposited afterwards on the stack of LEDs with the configuration suitable for exposing the electrical contacts, as described by the shadow covering process. A photoresistive lens is used that allows dry etching of the holes in the passivation layer 119. Next, the thread 152 is depoeited in the holes. A final photoresist layer and excess metal is removed by a "peel" process. After fabrication of the LED stack, whether it is done by shade coating, dry etching or other method, the stack must be properly packed to achieve acceptable operation and priority of the device. Figure 14 (A-C) illustrates the embodiments of the invention to facilitate packaging and to provide hermetic packing for up to 4 of the multi-color LED devices of the invention, for example. The reference numeral members used in Figures 14 (A-B) indicate the respective identical characteristics as in Figure 12E. The packaging with the almost identical structure of Figure 13F can also be used. Referring to Figure 14A, after coating the entire device with an insulating layer 97, such as SINx for example, access holes 120, 122 and 124 are formed using known etching and photopubbing techniques to expose the upper layers of 60M metal. ', 60M' ', and 60M' '', for LED (light emitting organic diode) blue devices. green and red, respectively, in this example. After that, appropriate paths of metal circuits 126, 128 and 130 (typically of gold material) are deposited in a path of the exposed metal layers 60M ', 60M ", and 60M"', respectively, to the protrusions of its indium solder located at an edge 132, 133 and 134 respectively, using the conventional process steps, Similarly, an anode electrode termination is provided through the metal circuit path 75 (Au., for example) formed to have an inner end that makes contact with the ITO layer 52 and an outer end that terminates in an indium boss protrusion 136 located at one end, this provided with two by a conventional method. The device is then coated with additional insulating material such as SINx to form an insulated cover such as welding protuberances 132, 133, 134 and 136 which are exposed along an edge. In this way, the organic LED device can be easily packaged using conventional techniques, or the packaging mode of the invention as described immediately below. A method for being four multi-color LED devices on a common substrate 50 in a packaged configuration will now be described, with respect to Figures 14A, 14B, and 14C, respectively, for 4 embodiments of the invention. The starting material includes a glass substrate 50 coated with an indium-tin oxide (ITO) overcoat. The following steps are used to obtain the packaged organic arrangement of multiple color LEDs: 1. Cover layer 52 of ITO to deposit a layer 138 of SIOO2 in a concentric ring pattern with square band, in this example (you can create some another pattern), on top of layer 52 of ITO using conventional techniques. 2. Form 4 stacks of 3-color LEDs that share common layers in region 140 over layer 138 of ISO 12 using methods co or those taught above to obtain, for example, any of the structures in Figure 12E or 13F, and 14 TO. 3. Deposit the metal contacts 170 through 181 through the shadow covering. Each one ends at the outer ends on the layer 138 of SIO2, to provide the bearings 170 to 181 ', respectively, for correction or external electrical connection. Note that contacts 126, 128 and 130 in Figure 14A are the same as every 3 successive contacts 170-181, respectively. Each group of 3 contacts, from 170 to 172, 173 to 175, 176 to 178, and 179 to 181, ends in e? inside ? another ends to provide an electrical connection with the metal layers 60M ', 60M' ', and 60M' '', respectively, of each of the four organic LED devices, respectively. Another metal contact 182 is deposited by shadow covering on the edge of the ITO layer 52 common to the 4 LED devices, to provide a common anode connection, in this example, not through the covering and To the appropriate chemical tank the 4 LED diepoeitivos are made in completely independent layers, 4 marinade contacts will have to be provided, respectively, for the last disposition that can be operated multiplexed. The multi-color LED arrangement that is described in this example is a non-multiplexed arrangement. 4.- Depositing by surplus covering, for example, a second stage 184 of SIO2 of a continuous band or ring exiting the exposed joint bearings 170 'to 181', using either electronic replacement, or plasma enhanced CVD, whose position by electronic vision, for example. 5.- Deposit pb ~ Sn and other low temperature fusion solder in a band or continuous ring 186 on top of the second layer or band 184 of SIO2. 6. - Deposit on the bottom of a cover glass 188 or a metal ring 190 that coincides with the seal ring 186. 7. Install the cover glass 188 on the beam, as shown in FIG. 14, by joining the metal ring 190 against the welding ring 186. 8.- Place the assembly in an atmosphere of inert gas, such as dry nitrogen, and apply heat to the fusion welding ring 186 to obtain a germ-like optics, with the inert gas captured in the interior region 192. Referring to Figure 15 , an indicator 194 appears to be an organic LED indicator of RGB. The 195 points are ellipses. A complete indicator such as a 194 comprises a plurality of image elements such as 196. The image elements are arranged as an XY matrix to cover the entire surface area of a glass sheet coated with ITO. Each image element includes a stacked LED structure like the one shown in Figure 2. Instead of having di erential fixations such as batteries 30, 31 and 32 (Figure 2), each line of the designated terminals in Figure 2 as blue (B), green (G) and red (R) is removed and is coupled to the appropriate 197 and 198 processors in the ??? horizontal and vertical, respectively, all low control of a visual display generator 199 that can be a television unit. Consequently, each array of LEDs have at least 2 axes (x, y), and each LED intersects at least 2 of the axes. Also, the axis of the X's can represent? N horizontal axis and the axis of the G? N vertical axis. It is well known now that television signals such as the NTSC label are converted to color components R, G and B for visual color presentations. They are ??? computer monitors that use red, green and blue as primary colors. Controllers of positive screens are also known by vertical and horizontal scanning techniques. The entire arrangement of the image element structures deposited on the surface of the array is explored using typical XY scanning technique such as using XY orientation. This technique is used in the visual presentations of the active matrix. Can you use the modulation of ??? of puleo to excite eelectiva entre lae entrances red, green and blue of each of the elements of DH LED image according to the content of precious signals. In this way, each of the LEDs on each identifier line is addressed and targeted selectively and directed by many means such as signals in the population of the pulse width or by voltages generated in the ladder to allow these crops of emitting uric colors or multiple colors, as another light emitted from such structures creates an image that has a predetermined shape and color. Also, each of the XY axes can be sequentially scanned and each of the selected LEDs in the array partially excited to emit light and produce an image with sequentially created colors vertically. The selected LEDs can be excited simultaneously. As indicated above, the technique of the vertical arrangement of the layers shown in Figure 2 allows in the manufacture of the 3 color DH LED image element within extremely small areas. This allows to provide high definition visuals such as visual presentations that have from 300 to 600 lines per 2.54 cm resolution or more. Each high resolution would be obtainable using prior art grants of which the organic emission layers or fluorescent media which generate the different colors which are naturally saturated one from the other. Based on modern standards, an LED device can be provided as shown in Figure 2 with an effective area small enough to allow the hundreds of imaging elements to be vertically and horizontally appealed within the 6.45 cm area. Thus, manufacturing techniques allow an extremely high resolution with high light intensity to be achieved. Figure 16 shows another embodiment of the invention for a multi-color LED device that includes the appeal and up to N individual LEDs, where N is an integer 1,2,3 N. Depending on the state of the technology in any future time, they will have a practical limit. The N stacked levels of LEDs can be provided, for example, using either the steps of the shadow cover process previously described in FIGS. 12 (a-e), or the dry etching process illustrated in Figures 13a to 13f. The base or bottom portion of a stacked arrangement in Figure 16 is a glass substrate 102 as shown in Figure 13f, for example with a layer 10.1 of ITO formed on the substrate 102. Upon immediate access to the first LED die, and e eecting the LEDs in this example, each successively includes on the ITO layer 101 an HTL layer 154, an EL layer 156, an ETL layer 158, a metal layer 160 and an ITO layer 162. The LED device 164 of the next level also includes an upper metal layer (see layer 152 of Figure 13f) higher than ITO thereof. A peacekeeping layer 119 is deposited on the lapillant, as in the color stack of Figure 13 f. The material for each EL 156 layer of each LED device is selected to provide a particular color for the associated LED. As the 3-color device, devices with shorter wavelength (blue) should be lower in the stack than the longer wavelength device (red) to avoid optical absorption by the red editing layers. The colors selected for each respective LED and the actual number of stacked LEDs are dependent on the particular application and the desired capacity of colors and tonality to be provided. Such multi-color devices may also be used in optical communications networks, in which each optical channel is transmitted using a different wavelength emitted from a given device in the stack. The eminently concentric nature of the emitted light allows the coupling of several wavelengths into a single transmission optical fiber. In the practice of such stacked dispositions, such excess foci are formed by desiring the ITO layer 162 of each device followed by the dieting of the appropriate metallization to facilitate packing and electrical connection to each of the LED devices in the stack. similar to that described for the multi-color applied LED device of FIGS. 14A, 14B and 14C, for example. This device can be used to provide a low-cost, high-resolution, flat-power indicator of full high-gloss colors of any size. This extends the scope of this invention to microforests as small as a few millimeters to the size of a building. The images created in the visual presentation could be text or illustrations in full color, in any resolution depending on the size of the individual LEDs. Those skilled in the art can recognize various modifications to the embodiments of the invention described and illustrated herein. It is intended that such modifications be covered by the spirit and scope of the appended claims. For example, a multi-color stacked LED device, such as the 3-color device described above of Figure 2, in another embodiment of the invention can be provided by forming LED 20 from a polymer device as shown. in Figure IC, or from a deposited film of metal phosphonate, instead of having the 3 layers lying in vacuo. The remaining 3 stacked LEDs would be formed by vapor deposition.

Claims

NOVELTY OF THE INVENTION CLAIMS 1. - A structure for light emitting device (LED) multicolor comprising, a plurality of at least? N first and a second organic emisoreee emitting light (LED) stacked one on top of the other, to form a structure in cap > ae, with each LED spaced from one another by means of a tranepant conductive layer to allow each die to receive a separate directing potential to operate and emit light through the stack.
2. The structure for multicolor light emitting die according to claim 1, further characterized in that each of said LEDs emit a different wavelength of light and therefore? N color-different when directed.
3. The multi-color light dielectric structure structure according to claim 1, which includes at least one third diepoeitive and one light source stacked one on top of the other, respectively.
4. The structure of the light-emitting diode multi-colored according to claim 3, further characterized in that the first device emits the blue color (B), said second device emits the green color (G) and the third Dispoeitivo emits the color red (R). 5. - The structure for multicolored light emitting device according to claim 4, further characterized in that said devices are stacked in the following sequence along the vertical axis starting from a bottom and directed upwardly, where the first device emits a color blue, and has the second device to emit green color located on the upper part of the upper surface of said emitter-blue device, with the third device to emit a red color located in the upper part of the upper surface of said green emitting device, whereby said emitter-blue device of the shortest wavelength is in the lower part with the red emitting device of longer wavelength on the upper part when the structure is vertically aligned. 6. The structure for multicolored light emitting device according to claim 1, characterized p-orque each LED diepoeitivo is a tranepant double heteroestrturatura (DH) device made of materialee orgánicoe. 7. The structure for multicolored light emitting device according to claim 1, characterized in that each LED device is a device of a single transparent heterostructure made of organic materials. 8. The structure for multicolor light emitting die according to claim 6, further characterized said transparent conductive layer includes indium tin oxide (ITO). 9. The structure for multicolored light emitting device according to claim 7, further characterized in that said transparent conductive layer includes indium-tin oxide (ITO). 10. The structure for multicolored light emitting device according to claim 3, further characterized p > or said first, second and third organic LEDs are stacked in successive order on a common subetrato. 11. The structure for multi-color light emitting device according to claim 10, further characterized by said substrate being in the lower part of said LED structure, and the uppermost layer of said third organic LED included with material of indium-eetane oxide (ITO) which serves as a contact for a layer of underlying metal material. 12. The structure for multicolored light emitting device according to claim 6, further characterized in that said traneparent conductive layer comprises a metal layer having a working function of less than about four volts, and an ITO layer on said metallic layer. . 13. The structure for multicolored light emitting device according to claim 6, further characterized in that said organic material is selected from the group consisting of trivalent metal quinolate complexes, bridged trivalent metal quinolate complexes, trivalent metal complexes with Schiff base, tin metal complexes (iv), complexes of metal acetylacetonate, bidentate metal ligand complexes, bisphosphonates, trivalent metal malemonitrile lithium complexes, molecular charge transfer complexes, aromatic and heterocyclic polymers and mixed rare earth chelates. 14. The structure for multicolored light emitting device according to claim 13, further characterized in that the trivalent metal quinolate complexes have the following formula. wherein R is selected from the group q? e consisting of hydrogen, substituted and unsubstituted alkyl, aryl and a heteriocyclic group, L represents a ligand selected from the group q? e consisting of picolylmethyl ketone; substituted and unsubstituted salicylaldehyde; a group of the formula R (0) CO-, wherein R is as defined above; halogen; a group of the formula RO-, where R is as defined above; and quinolates and derivatives thereof. 15. The structure for multicolor light emitting die according to claim 13, further characterized in that the bidentate ligand complexes of metal have the following structure: MDL * 2 wherein M ee elects of trivalent metals of groups 3-13 of the periodic table and the lanthanides, D is a bidentate ligand and L * ee selects from the acetylacetonate-containing group; compounds of the formula OR3R wherein R3 is Si or C and R is selected from the group consisting of hydrogen, unsubstituted and substituted alkyl, aryl,? n heterocyclic group; 3, 5-deit-bu) phenol; 2, 6-di (t-b?) Phenol; 2,6-di (t-bu) cresol and? N compound of formula 16. - The structure of the multicolor light emitting device according to claim 15, further characterized in that D is selected from the group q? E consisting of 2-picoli1ceton s, 2-quinaIdilcetonae and 2- (o-phenoxy) pyridincetonae. 17.- The ect? Ct? Ra p > a multicolored light emitting device according to claim 13, further characterized in that the divalent metal complexes of Schiff base are selected from those having the formula where i is a divalent metal chosen from groups 2-12 of the periodic table, R is selected from the group consisting of wherein X is selected from the group consisting of hydrogen, alkyl, alkoxy, each having 1 to 8 carbon atoms, aryl, a heterocyclic group, phosphine, halogen and amine. 18. The structure for multicolored light emitting device according to claim 13, further characterized in that the aromatic and heterocyclic polymers are selected from the group consisting of poly (para-phenylene vinyl), poly (ialkoxyphenylenevinylene), poly (thiophene), poly (phenylene),? oli (phenylacetylene) and poly. (N-vinylcarbazole). 19. The structure of the multicolored light emitting device according to claim 13, further characterized in that the mixed rare earth chelates comprise a lanthanide bonded to a bidentate or heterocyclic aromatic group. 20. The structure for multicolored light emitting device according to claim 19, further characterized in that the aromatic or heterocyclic bidentate group is selected from the group consisting of ealicylaldehyde and derivatives thereof, salicylic acid, quinolates, ligands of Schiff base, acetylacetonates, phenanthroline, bipyridine, quinoline and pyridine. The structure for multicolored light emitting device according to claim 19, further characterized in that the divalent metal maleonitritytithiolate complexes have the formula where M3 is a metal that has a charge + 2, and is selected from the group that connects cyano and substituted and unsubstituted phenyl, and L.5 is a group that has no charge. 22. The structure for multicolored light emitting device according to claim 21, further characterized in that L5 is a group of the formula P (0R) 3 or P (R) 3, wherein R is selected from the group q? E It consists of hydrogen, substituted and unsubstituted alkyl, aryl and a halocyclic group. 23.- The structure for multicolored light emitting device according to claim 13, further characterized in that the bifophs have the formula? (03P-organic-P03) and, where M2 is a metal ion and organic represents an aromatic or heterocyclic fluorescent compound bi functionalized with phosphate groups. 24. The structure for multicolored light emitting device according to claim 13, further characterized in that trivalent metal quinolate complexes with bridge have the formula wherein M is a trivalent metal ion and Z is selected from SiR or P = 0, wherein R ee is selected from the group consisting of hydrogen, substituted or unsubstituted alkyl, aryl, or a heterocyclic group. 25. The structure for multicolored light emitting device according to claim 13, further characterized in that the tin metal complexes (iv) have the formula SnL 2l-22, wherein Ll is selected from the group consisting of salicylaldehydes, salicylic acid, and q? inolates and L2 ee selects from the gr? p > or which consists of substituate and unsubstituted alkyl, aryl and a heterocyclic group. 26. The structure for multicolored light emitting device according to claim 13, further characterized in that the molecular charge transfer complexes comprise an electron acceptor forming a complex with an electron donor. 27. The structure for multi-color light emitting device according to claim 1, further characterized in that said devices are stacked in a dependent order with and in accordance with the respective wavelength emission and absorption characteristics. 28. The structure for multicolored light emitting device according to claim 2, further characterized p > or the longest wavelength LED is on the top of the stack in the vertical direction, followed by the shorter wavelength LED, with the shortest LED on the bottom of the stack. 29. A structure for multicolored light emitting die comprising: a layer of transparent substrate that has deposited on a surface a first traneparent conductive reverend; a first light emitting device deposited on said first transparent conductive coating; a second conductive-transparent coating deposited on the surface of said first device, not in contact with said first coating; a second light source depoeited on the surface of said second coating; a third transparent conductive coating deposited on the surface of said second device, not in contact with said second coating; a third light emitting device deposited on the surface of said third reverend; and an additional conductive coating deposited on the surface of said third device not in contact with said third coating. 30. The structure for multicolored light emitting device according to claim 29, further characterized by said first, second, third and fourth conductive coatings are adapted to receive-individual sources of directing potential, respectively. 31.- The structure for multicolored light emitting die according to claim 29, further characterized in that said devices and conductive layers are deposited to form a stairway profile, with said transparent substrate of a length greater than said first device, the first device is of a length greater than the second device, said second device ee of a length greater than the third diepoeitive; each step is coated by said respective conductive coating adapted to apply operation potentials to said structures of the device, and said first to third transparent conductive coatings allow the light emitted by any of said devices, respectively, to pass through said transparent substrate layer . 32.- The structure for multicolored light emitting device according to claim 29, further characterized in that said additional conductive coating includes a third metal that reflects the light directed upwards back to said substr-ato. 33.- The structure for multicolored light emitting device according to claim 32, further characterized in that said additional conductive coating also includes a relatively thin indium-tin oxide (ITO) layer, between said coarse metal and said surface of the third Dispoeitive not in contact with said third coating; The ITO layer serves as a contact for a layer of sinewave material from said third iodine and light source. 34.- The structure for multicolored light emitting device according to claim 29, further characterized in that said transparent substrate is glass, said first conductive coating is indium-tin oxide (ITO) and each of the second, third and coating additional conductor, are comprised of an ITO layer disposed on a metal layer of low working function. 35. The structure for multicolored light emitting device according to claim 29, further characterized in that each of said devices are double heterostructures (DH); said first device is in operation when it is dirivated to emit blue light (B), said second device is in operation when it is directed to emit green light (G), said third device is in operation when it is directed to emit red light (R) . 36.- The structure p > A multi-colored light emitting device according to claim 35, further characterized in that each structure DH is comprised of organic components. 37.- The structure for multicolored light emitting device in accordance with claim 29, further characterized p > or each of said devices are individual hetero-structures (SH), said first device is in operation when it is directed to emit blue light (B), said second device is in operation when it is directed to emit green light (G), and said third device is in operation when it is redirected to emit red light (R). 38.- The structure for multicolored light emitting die according to claim 29, further characterized in that each of said devices are polymer structures, with said first device in operation when it is directed to emit blue light (B), said second dietary is in operation when it is directed to emit green light (G), and said third dietary is in operation when it is directed to emit red light (R). 39.- A multi-colored indicator, which comprises: a plurality of multicolored light emitting device pixel structures diepueetae in rows and columns to provide an indicator surface with each pixel structure connecting at least one structure for multicolored light emitting device, wherein each device structure comprises first, second and third diepoeitive light emitters (LEDs), stacked one on top of the other to form a layered structure, with each LED separated by a transparent conductive layer, and with which indicator can be addressed by said conductive layers to cause said multicolored light emitting devices to emit light when they are directed. 40.- The multicolor multicolored pre-exhibition according to claim 39, further characterized in that said first LED emits blue light (B), said second LED emits green light (G) and said third LED emits red light (R). 4.1.- The multi-color visual presentation according to claim 39, further characterized in that each LED device is a die-component of double heterostructure (DH) capable of emitting light as a function of an organic compound used in said device. 42.- The multicolored visual presentation according to claim 39, further characterized in that each of said LED devices is an individual heterogeneous structure (SH) capable of emitting light as a function of an organic component used in said device. 43.- The multicolored visual presentation according to claim 39, further characterized in that each of said LED diepositive is a structured polymer device capable of emitting light as a function of an organic compound used in said device. 44. - The multicolored visual presentation according to claim 39, further characterized in that said plurality of structures for multi-color device are disposed in rows and columns on a glass substrate coated with a thin transparent layer of ITO and with each of said first, second and third LED devices of each pixel stacked on said substrate to form a separate pixel location. 45.- A method p > to fabricate a structure for dielectric and light multicolor (LED) comprising the pawns of: forming a first transparent conductive layer on a transparent substrate; depositing a first layer of conduction through holes on said first transparent conductive layer; depositing a first cap of organic emission on said first conduction layer by holes to provide a first color emission; depositing a first layer of electronic transport on said first emission layer; depositing a second transparent conductive layer on the first electronic transport layer, said second transparent conductive layer adapted to receive a first directing potential; depositing a second layer of conduction through holes on the second transparent conductive layer; depositing a second layer of organic emission on said second conduction layer by holes to provide a second color emission; depositing a second layer of electronic transport on said second emission layer; and depositing a third transparent conductive layer on said second electronic transport layer, the third transparent conductive layer is adapted to receive a second potential of dirivation. 46.- The method of compliance with the claim 45, further characterized in that it includes the step of shading a region of said first transparent conductive layer before depositing said first conductive layer through holes to expose said region of the first transparent conductive layer, thereby allowing said first potential of The dirivation is applied between the second transparent conductive layer and the region of the first transparent conductive layer. 47. The method according to claim 45, further characterized in that it includes the step of recording a region of the first conduction layer by gaps to expose a portion of said transparent first conductive layer, thereby allowing the first Directional potential is applied between the second transparent conductive layer and the exposed portion of the first transparent conductive layer. 48. A method of manufacturing a hermetically packed multicolored light emitting (LED) device comprising the steps of: forming a first conductive traneparent layer on a transparent substrate; enriching said first conductive layer by depositing a layer of SiO2 on it in a concentric pattern; forming a portion of the first layer of SiO2 in at least one multi-colored LED, each comprising at least one first and second organic light emitting devices (LEDs) stacked one on top of the other to form a layered structure on said first layer of SÍO2; depositing by means of a shadow masking a plurality of metal contacts or circuit paths each having a terminating end near an outer edge of the first layer of SIO2, and each having another terminating end on an individual directing electrode of said multicolored LED; dep > ositar by shadow masking a second layer of SIO2 co or a concentric ring with said first layer of SIO2 and on external portions of said plurality of metal contacts, but leaving exposed the ends thereof; depositing a low melting temperature solder ring on and concentric with, the second ring of SiO2; deposit on the bottom of a cover glass a metal ring located to match said welding ring; installing said cover glass on said substrate and at least one multicolored LED, with said welding ring resting against said metal ring on said cover glass; place said assembly in an inert gas atmosphere; and heating said weld ring to melt the weld and form an air tight seal, and trap said inert gae in a lower region between the p > lower art of said cover glass and the underlying eubst ato. 49. - The method according to claim 48, further characterized in that said step of forming multicolor LED also includes the formation of a plurality of multicolored LED devices on said first layer of Si? 2. 50.- The method of compliance with the claim 48, further characterized in that said inert gas includes dry nitrogen. 51. The method of compliance with the claim 48, further characterized in that said first transparent layer includes indium-tin oxide (ITO). 52.- The method of compliance with the claim 51, further characterized in that it includes the step of depositing a metal contact close to an edge of and on, said layer of metal. ITO to serve as a cathode electrode. 53.- The method of compliance with the claim 49, further characterized in that it includes the step of depositing a metal contact close to an edge and on said first transparent conductive layer to serve as a cathode electrode. 54. The method according to claim 53, further characterized in that said first transparent conductive layer includes indium-tin oxide (ITO). 55.- A multicolored excitable light emitting structure, comprising: at least three layers of conductive material; a dielectric light pattern (LED), excitable, traneparent, disposed between the adjacent layers of conductive material, respectively, so that said LEDs are stacked together with one of said layers of conductive material disposed between each two LEDs, and the others layer of eethan conductive material disposed on the outside of said LEDs; said layer of conductive material are disposed between adjacent LEDs and one of said outer layers is substantially transparent; and means on each of said layers of conductive material p > to connect to a dirivador to selectively excite each of said LEDs. 56.- The structure according to claim 55, further characterized in that each of said LEDs emits a different color. 57. The structure according to claim 56, further characterized in that said LEDs are stacked in a vertical diepoeition. 58.- The structure according to claim 57, further characterized in that it includes a third LED in said stack; the LED that is in the middle part, is in operation to emit light of a predetermined wavelength; one of the other LEDs is in operation to emit light of a larger wavelength; and the low beam LED is in operation to emit light of shorter wavelength. 59.- The structure according to claim 57, further characterized in that it includes a transparent substrate; said stack of LEDs and layers of conductive material are supported by said transparent substrate in an order corresponding to the wavelength of light that said LEDs emit; and said LED emitting the shortest wavelength is closer to said transparent substrate, so that the light emitted from each of said LEDs, when excited, is transmitted through the other LEDs and through said transparent substrate. 60.- The structure according to claim 59, further characterized in that it includes a layer of anti-reagent material disposed between the LED emitting the shortest wavelength and said traneparous substrate, so that the light emitted from each of the said LEDs when excited are not reflected from said transparent substrate. 61.- The structure according to claim 59, further characterized in that it includes a layer of reflective material adjacent said LED that emits the longest wavelength to reflect the light emitted from said LED back to said substrate. 62.- The structure according to claim 55, further characterized in that said layer of conductive material includes indium tin oxide (ITO) and a metal. 63.- The structure according to claim 62, further characterized in that said metal has a work function of less than four electronic volts. 64. - The structure according to claim 55, further characterized in that it includes a traneparent subetrato, said stack of LEDs and conductive material are supported by said transparent substrate in an order corresponding to the wavelength of light that said LEDs emit; and said LED emitting the shortest wavelength is closest to said transparent substrate so that the light emitted from each of said LEDs, when excited, is transmitted through the other LED and through said transparent substrate with absorption Substantially reduced. The structure according to claim 64, further characterized in that it includes a layer of antireflection material disposed between said LED that emits the shortest wavelength and said transparent substrate, so that the light emitted from each one of said LEDs, when excited, is not reflected from said transparent substrate. 66.- The structure according to claim 64, further characterized in that said layer of conductive material includes indium tin oxide (ITO) and a metal. 57.- The structure according to claim 66, further characterized in that said metal has a work function of less than four electronic volts. 68. - The structure according to claim 64, further characterized in that it includes a layer of reflective material adjacent said LED that emits the longest wavelength to reflect the light emitted from said LED back to said substrate. 69.- The structure according to claim 65, further characterized in that each of said LEDs is a double heterostructure. 70.- The structure according to claim 55, further characterized in that each of said LEDs is a single heterostructure. 71.- An excitable structure, emieora of light, which comprises:? N e? Bstrato transparent; a first layer of substantially transparent electrically conducting material supported on said subetrato; a transparent, excitable light emitting device (LED) supported on said first layer of substantially transparent electrically conductive material, said LED includes an emission layer; a second layer of electrically conductive material supported by said LED; and said LED is in operation to produce light and transmit it through said transparent substrate when it is excited. 72. The structure according to claim 71, further characterized in that said first and second layer comprise indium-ethane oxide. 73. The structure according to claim 72, further characterized in that said second layer comprises a metal layer that has a working function of less than four electronic volts. The structure according to claim 73, further characterized in that said metal is from the group that provided magnesium, arsenic and magnesium / gold alloy. The structure according to claim 71, further characterized in that it includes: said second layer of electrically conductive material substantially transparent; a second light emitting device (LED), excitable, transparent, resting on said second layer of electrically conductive material, said second LED includes an emission layer; a third layer of electrically conductive material supported by said second LED; and said second LED is in operation to produce light and transmit it through said first LED and through said transparent substrate when excited. 76.- The emittable light emitting structure according to claim 71, further characterized in that said emission layer includes at least one material selected from the group consisting of trivalent metal quinolate complexes, trivalent metal quinolate complexes with bridges , complexes of divalent metal with Schiff base, complexes of metallic tin (iv), complexes of acetylacetonate metal, complexes of ligand bidentate metal, bi phosphonates, complexes of maleonitrilditiolato of divalent rnetal, cornplejoe of traneferencia of molecular charge, polimery aromatics and heterocyclic and mixed earthquakes of rare earths. 77.- A multicolored excitable light emitting indicator, comprising: a plurality of excitable light emitting structures; each of said structures comprises a plurality of transparent light emitting devices (LEDs) that are stacked together; each of said LEDs and each of said structures is in operation to emit a different colored light when excited; and means for selectively exciting at least one of said LEDs in each of said structures so that the color produced by each of said structures of light is determined by which LEDs or LEDs, in each light-emitting structure, are excited. so that the light emitted from said structures produces an image having a predetermined shape and color. 78.- The visual presentation according to claim 77, further characterized in that said erect structures of excitable light are arranged in a formation, said formation includes at least two axes, and each of said light-emitting structures is at the intersection of at least two of said axes. 79.- The visual presentation according to claim 78, further characterized in that said axes define a horizontal axis and a vertical axis. 80. - The French pre-exhibition according to claim 78, further characterized in that said means for selectively exciting at least one of said LEDs in each of said structures, includes: means for selecting the light sources and the LEDs in those structures to be excited; and means for scanning in series each of said axes so that said means for selectively driving at least one of said LEDs along said axes so that the LEDs are selected in series in the interection of said axes to emit light, so that said image and said colors are produced in series. 81.- The present pre-exhibition according to claim 77, characterized in that said means for selectively exciting at least one of the LEDs in each of said structures includes: means for substantially driving the LEDs that are in said structures, so that the image and the colors are produced in series by means of said structures. 82.- The visual presentation according to claim 77, further characterized in that said means for selectively driving said LEDs are in operation to simultaneously excite the LEDs selected from said structures of said node and said colors are simultaneously produced by said means. LEDs selected from the structures. 83. - The vintage presentation according to claim 77, further characterized in that each of said structures includes: a transparent substrate; said LEDs each have a lower part and an upper part and define a stack of LEDs having a lower part and an upper part, said pile being supported on said transparent substrate; a first layer of substantially transparent electrically conductive material, said first layer being die gap between the lower LED and said transparent substrate; at least a second layer of substantially transparent electrically conductive material, said second layers being disposed between said adjacent LEDs; a first layer of electrically conductive material, this first layer is disposed adjacent to the upper part of said upper LEd; and means on each of said layers of electrically conductive material to be connected to a dirivator to selectively excite each of said LEDs. 84.- The visual presentation according to claim 83, further characterized in that each of said layers of electrically conductive and substantially transparent material and said layer of electrically conductive material, includes an indium-tin oxide layer. 85.- The visual presentation according to claim 83, further characterized in that each of said layers of electrically conductive, subenementally traneparent material, and said layer of electrically conductive material include a metal layer and an indium-tin oxide layer. . 86.- The visual presentation according to claim 85, further characterized in that said metal has a working function of less than about 4 electronic volts. 87.- The visual preview in accordance with claim 83, further characterized in that it includes a layer of reflective material disposed on the cap > of electrically conductive material adjacent to the top of said upper LED, so that the light from said LEDs is reflected through said transparent substrate by means of the layer of reflective material. 88.- The vintage presentation according to claim 87, further characterized in that said stack is supported by said transparent substrate in an order corresponding to the wavelength of the light emitted by said LED; and said LED emitting the shortest wavelength is closest to said transparent substrate so that the light emitted from each of said LEDs when excited is transmitted through the other LEDs and through said transparent light. 89.- The visual pre-exhibition according to claim 88, further characterized in that it includes a layer of anti-reflective material disposed between said LED emitting the shortest wavelength and said transparent substrate, so that the light emitted from each of said LEDs when excited is not reflected from said transparent substrate. 90.- The visual presentation according to claim 77, further characterized by including a traneparent substrate; each of said LEDs have a high part and a lower part; at least two layers of substantially transparent electrically conductive material, one of whose layers is disposed over said transparent stratum; the lower part of one of said LEDs in each of said structures is ap > Oyada on said layer of substantially transparent electrically conductive material; The other layer of substantially transparent electrically conductive material is disposed between the rest of said LEDs of mo < -to that said LEDs define a stack; a layer of electrically conductive material resting on top of said LED in said stack that is farthest from said transparent substrate; and means on each of said layers of subtrantially electrically conducting electrically conductive material and on said layer of electrically conductive material for connecting to a dirivator to selectively energize each of said LEDs. 91.- The vintage presentation according to claim 90, further characterized in that each of said layers of electrically conductive, sub-substantially traneparent material, and said layer of electrically conductive material includes a layer of indium-oxide oxide. 92.- The visual preview according to claim 90, further characterized in that said layers of electrically conductive material, subenementally traneparent, and each of said layers of electrically conductive material include a metal layer and an indium-tin oxide layer. . 93.- The visual presentation according to claim 92, further characterized in that said metal has a working function of approximately 4 electronic volts. 94.- The visual presentation according to claim 90, further characterized in that a layer of reflective material is disposed on said layer of substantially transparent electrically conductive material, adjacent to the upper part of said upper LED of light which is reflected light through of said substrate by means of said layer of reflective material. 95.- The structure according to claim 94, further characterized in that said LED stack is supported by said transparent euetrato in an order corresponding to the wavelength of the light that said LEDs emit, and said LED emitting the length The shorter wavelength is closer to said transparent substrate so that the light emitted from each of said LEDs when they are excited is transmitted through the other LEDs and through said traneparent euetrato. 96.- The structure according to claim 95, further characterized in that it includes a layer of anti-reflective material disposed between said LED that emits the short wavelength and said transparent substrate, so that the light emitted from each of said LEDs when excited, it is not reflected from said transparent substrate. 97.- The visual presentation according to claim 77, further characterized in that said plurality of LEDs include: tree LED; each of said LEDs is a double heterostructure (DH); the LED closest to the transparent substrate is in operation when it is turned on to emit blue light; the farthest LED of said transparent substrate is in operation when it is excited to emit red light; and the other LED is in operation when it is turned on to emit green light. 98.- The multi-color light emission visual presentation according to claim 97, further characterized in that each of said LEDs includes an emission layer containing an organic material selected from the group consisting of complexes of trivalent metal quinolate, complex trivalent metal quinolate with brig, divalent metal complexes with Schiff bae, tin metal complexes (iv), metal acetylacetonate complexes, bidentate metal ligand complexes, biphosphonates, divalent metal maleonitrildithiolate complexes, Molecular charge transfer, aromatic and heterocyclic polymers and mixtures of rare earths. 99.- The visual preview in accordance with claim 77, further characterized in that said plurality of LEDs include: three LEDs; each of said LEDs is an eole hetero structure (SH); The LED closest to the transparent substrate is in op > eration when it is excited to emit blue light; The furthest LED of said transparent substrate is in operation when it is excited to emit red light; and the other LED is in operation when it is turned on to emit green light. 100.- The multi-color light emission visual presentation according to claim 99, further characterized in that each of said LEDs includes an emission layer containing an organic material selected from the group consisting of trivalent metal q? Inolate complexes , Trivalent Metal Quinolate Complex with Bridge, Divalent Metal Complexes with Schiff Base, Tin Metal Complexes (IV), Metal Acetylacetonate Complexes, Metal Bidentate Ligand Complexes, Bi Phosphonates, Divalent Metal Maleonitrityl Diolate Complexes , molecular charge transfer complexes, aromatic and heterocyclic polymers and mixed rare earth chelates. 101. A method of manufacturing a multicolored excitable light emitting structure comprising the steps of: providing a transparent substrate; providing a first transparent electrically conductive layer on said transparent substrate; providing a first transparent light emitting diode (LED) on said substrate, said first LED being in operation when it is energized to emit a light of a predetermined first wavelength; providing a second electrically conductive, substantially transparent layer on said first LED; providing a second transparent light emitting diode (LED) on said substantially transparent second electrically conductive layer; said second LED is in operation when it is energized to emit a light of a second predetermined wavelength, which is larger than said first predetermined wavelength; and an electrically conductive layer on said second LED. 102. A method according to claim 101, further characterized in that said steps for providing the first and second LEDs comprise the formation of each of said LEDs; depositing an emission layer on each of said conduction layers by holes; and depositing an electron transport layer on each of said emission layers. 103. The method according to claim 102, further characterized in that each of said emission layers includes a material selected from the group consisting of trivalent metal quinolate complex, bridged metal quinolate complex, quivalent metal complexes of Schiff base, tin metal complexes (iv), metal acetylacetonate complexes, bidentate metal ligand complexes, and phosphonates, dithionium aleonitrildithiolate complexes, molecular charge transfer complexes, arornáticoe and heterocyclic polymers and q Mixed rare earths. 104. A method according to claim 103, characterized in that each of said electrically conductive substantially transparent layers and said electronically conductive layer is comprised of indium-tin oxide. 105. A method according to claim 102, further characterized in that it includes: the step of providing a substantially transparent metal layer between said LEDs; and a layer of said substantially transparent electrically conductive material on each of said subenementally tranep > metal layers; rente 106.- A method in accordance with the claim 105, further characterized in that said metal has a working function of less than about four electronic volts. 107. A method according to claim 105, further characterized in that said metal is of the group q? E consisting of magnesium, arsenic and magnesium / gold alloy. 108. - A method in accordance with the claim 101, further characterized in that said layer of electrically conductive material has a reflective surface to reflect the light emitted from said LEDs through said transparent substrate. 109. A method according to claim 101, further characterized in that it includes the steps of: providing an electrical contact on each of said layer of electrically conductive material, substantially transparent, and on said layer of electrically conductive material, so that each of said layers can be connected to a source of p-directing potential. 110.- A transparent light emitting diode (LED) that is transparent, comprising: an emission layer, a conduction layer by holes and an electronic transport layer; said emission layer is disposed between the hole conduction layer and the electronic transport layer; a first layer of electrically conductive, subenementally traneparent material, and a second layer of electrically conductive material; said first layer is on said conductive layer by holes, said second layer is on said electronic transport layer; and said emission layer consists of material selected from the group consisting of: trivalent metal-quinolate complexes, bridged trivalent metal quinolate complexes, divalent metal complexes with Schiff base, tin metal complexes (iv), complexes of metal acetylacetonate, bidentate metal ligand complexes, biphosphonate, divalent metal maleonitrildithiolate complex, molecular charge traneferon, aromatic and heterocyclic polymer and mixed rare earth chelates. 111. The device according to claim 110, further characterized in that said emission layer is not greater than about 200 fi of mirror; said conductive layer by holes is not greater than approximately 1000 fi of mirror; and said electronic transport layer is not greater than about 1000 fi in thickness.