MX9800692A - Elementos de memoria de celda unica de multiples bits, con borrado electrico y sobre-escritura directa y arreglos fabricados de ellos. - Google Patents

Elementos de memoria de celda unica de multiples bits, con borrado electrico y sobre-escritura directa y arreglos fabricados de ellos.

Info

Publication number
MX9800692A
MX9800692A MX9800692A MX9800692A MX9800692A MX 9800692 A MX9800692 A MX 9800692A MX 9800692 A MX9800692 A MX 9800692A MX 9800692 A MX9800692 A MX 9800692A MX 9800692 A MX9800692 A MX 9800692A
Authority
MX
Mexico
Prior art keywords
single cell
electrically erasable
memory elements
memory material
cell memory
Prior art date
Application number
MX9800692A
Other languages
English (en)
Other versions
MXPA98000692A (es
Inventor
Patrick J Klersy
David A Strand
Stanford R Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of MX9800692A publication Critical patent/MX9800692A/es
Publication of MXPA98000692A publication Critical patent/MXPA98000692A/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/828—Current flow limiting means within the switching material region, e.g. constrictions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)

Abstract

Un elemento de memoria operado eléctricamente (30) incluye un volumen de material de memoria (36) caracterizado por un gran intervalo dinámico de valores de resistencia eléctrica; y la capacidad de cuando menos una porcion de filamento que se ajustara por medio de la señal eléctrica seleccionada en cualquier valor de resistencia en el intervalo dinámico, sin importar el valor de resistencia previo del material para proporcionar una sola celda con capacidad de almacenaje para multiples bits. El elemento de memoria (30) también incluye un par de contactos (6, 8) incluye (1) una capa de película delgada (34, 38) preferentemente carbonitruro de titanio o siliconitruro de titanio, dispuesta adyacente al material de memoria (36) usada como barrera de difusion para inhibir la entrada de material extraño en el material de memoria (36), y (2) una capa de película delgada (32, 40), preferentemente una aleacion Ti-W, colocada dispuesta remota al material de memoria usada para proporcionar una barrera a la electromigracion, difusion de aluminio y proporcionar un contacto ohmico en la interfase de aluminio.
MXPA/A/1998/000692A 1995-07-25 1998-01-23 Elementos de memoria de celda unica de multiples bits, con borrado electrico y sobre-escritura directa y arreglos fabricados de ellos MXPA98000692A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/506,630 US5536947A (en) 1991-01-18 1995-07-25 Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US08506630 1995-07-25

Publications (2)

Publication Number Publication Date
MX9800692A true MX9800692A (es) 1998-07-31
MXPA98000692A MXPA98000692A (es) 1998-11-09

Family

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Also Published As

Publication number Publication date
EP0843901A1 (en) 1998-05-27
US5536947A (en) 1996-07-16
AU6504696A (en) 1997-02-26
KR19990035923A (ko) 1999-05-25
WO1997005665A1 (en) 1997-02-13
CA2227612C (en) 2006-05-30
KR100379322B1 (ko) 2003-07-16
EP0843901A4 (en) 1999-10-13
DE69634007T2 (de) 2005-12-29
JPH11510317A (ja) 1999-09-07
CA2227612A1 (en) 1997-02-13
DE69634007D1 (de) 2005-01-13
EP0843901B1 (en) 2004-12-08
JP4303316B2 (ja) 2009-07-29

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Legal Events

Date Code Title Description
FG Grant or registration
MM Annulment or lapse due to non-payment of fees