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Application filed by Benemérita Univ Autónoma De PueblafiledCriticalBenemérita Univ Autónoma De Puebla
Priority to MX2013001179ApriorityCriticalpatent/MX340597B/en
Publication of MX2013001179ApublicationCriticalpatent/MX2013001179A/en
Publication of MX340597BpublicationCriticalpatent/MX340597B/en
The present invention is related to a superficial emitter of electrons which emits electrons from a micrometric Graphene arrangement over silicon carbide. The emitter consists in a plurality of SiC barriers which are highly close and similar and which axes are parallel therebetween, formed by self-alignment with an equidistant separation. The operation of the device at low voltage is useful for obtaining an efficient emission, which results from the quantic mechanical tunneling between the barriers of the electrons injected from the cathode contact.
MX2013001179A2013-01-292013-01-29Superficial device for emitting electrons from an arrangement of silicon carbide barriers.
MX340597B
(en)
Ground bore, which comprises a handle, a cutting cone carried by the handle, and a seal assembly that forms a dynamic seal, the seal assembly including a rigid seal ring having elongated and shortened arm portions; method to provide a seal for an earth bore.