MX2008016392A - Panel-shaped semiconductor module. - Google Patents

Abstract

A solar battery module as a panel-shaped semiconductor module includes: a plurality of rod-type semiconductor elements (1) arranged in a matrix formed by a plurality of rows and columns for generation; a conductive connection mechanism for connecting the semiconductor elements (1) in the respective columns in series and electrically connecting the semiconductor elements (1) in the respective rows in parallel; and a conductive internal-mounting metal case (3) connected to the semiconductor elements (1) and constituting the conductive connection mechanism. The semiconductors (1) of the respective rows are contained in reflection surface forming grooves (20) of the internal-mounting metal case (3). The positive electrodes of the semiconductor elements (1) are connected to a bottom plate while the negative electrodes of the semiconductor elements (1) are connected to a finger lead (25). The upper surface is covered by a transparent cover.

Description

SEMICONDUCTOR MODULE WITH PANEL SHAPE TECHNICAL FIELD The present invention relates to a semiconductor module that receives or emits light in the form of a panel, and particularly with a semiconductor module comprising multiple semiconductor elements in the form of a rod (semiconductor devices).

BACKGROUND TECHNOLOGY A variety of solar batteries (solar battery modules and solar battery panels) have been proposed, which comprise external lenses to provide a large output power through a small area that receives light. However, because the larger areas are made in solar silicon batteries and the production cost of solar battery cells and solar battery modules is reduced, the collection of light by external lenses is used less. On the other hand, in the solar battery that uses semiconductors of an expensive compound, such as gallium arsenide (GaAs), the collection of light by external lenses is supposed to be economical and is proposed in many documents.

U.S. Patent No. 4,136,436 and U.S. Patent No. 6,204,545, by the inventor of the present application, propose a spherical or partially spherical solar battery cell made of a granular silicon crystal as a technique for Efficient use of expensive silicon raw material. The inventor of the present application proposed in the Japanese Patent Laid-Open Publication No. 2001-168369, a solar battery module having spherical solar battery cells, in which a reflective plate is provided in the back in a manner in close contact. The inventor has also proposed in International Publication No. WO03 / 056633, a spherical solar battery cell housed in a synthetic resin capsule having a larger diameter than the cell and filled with a synthetic resin for the collection of light. It has a smaller collection power compared to the use of external lenses, however, it can be done in a relatively simple structure. U.S. Patent Publication No. 5,482,568 discloses a solar battery with a micromirror in which multiple cone-shaped reflecting mirrors are provided in a housing, a solar battery cell having a surface receiving light flat, placed at the bottom of each cone, sunlight collected by the cone illuminates the upper surface of the solar battery cell, and heat is released from the underside of the cone. The flat solar battery cell receives light only on the upper surface and the reflection loss is not small. Therefore, it is difficult to sufficiently increase the use ratio of the incident light. In addition, this solar battery with a micro-mirror has the cells of solar batteries in the bottom of the housing, to prevent the cells of solar batteries from heating up due to the collection of light. U.S. Patent Publication No. 5,355,873 discloses a solar battery module of the light collection type, which has spherical solar battery cells. A sheet of thin metal (common electrode) has multiple almost hemispherical recesses with reflective internal surfaces. Limbs are formed in the centers of the recesses to support the cells of solar batteries. A conductive mesh holds multiple cells of solar batteries in their middle parts. The multiple cells of solar batteries are placed in multiple recesses and are electrically connected to the extremities. The multiple cells of solar batteries are connected in parallel by the conductive mesh and the sheet. The cells of solar batteries do not have an electrode in the upper part, the bottom or at either end and, therefore, the distribution of the electric current is non-uniform inside the cell of solar batteries. Thus, it is difficult to improve the efficiency of the generation of electric power. In addition, all the cells of solar batteries mounted on the sheet are connected in parallel, which is inconvenient to increase the output voltage of the solar battery module. US Patent Laid-Open Publication No. 2002/0096206, discloses a solar battery module in which spherical solar battery cells are provided in the centers of multiple partially spherical recesses, respectively, the recesses have each , a reflecting internal surface, the multiple recesses are formed by two thin metal plates and an insulating layer between them, and the two metal layers are connected to the positive and negative electrodes of the spherical solar battery cell, in the background of the same, to connect in parallel multiple cells of solar batteries. In the previous solar battery module, the spherical solar battery cells are electrically connected to the two thin metal plates in the part of the fund. This causes a disadvantage in that the distance between the surface receiving light from the upper half and the positive and negative electrodes of a spherical solar battery cell is large, and the loss of resistance after the recovery of the output electrical current is increased. . In addition, all the solar battery cells of the solar battery module are connected in parallel, which is inconvenient to increase the output voltage of the solar battery module. The inventor of the present application described in International Publication No. WO02 / 35612, a semiconductor element that receives or emits light in the form of a rod, which has a pair of electrodes on either end face and a solar battery module that uses the semiconductor element. However, when this rod-shaped semiconductor element has a larger length / diameter ratio, the resistance between the electrodes is increased. Therefore, the ratio is desirably adjusted to approximately 1.5 or less. Patent Document 1: U.S. Patent Publication No. 4,136,436; Patent Document 2: U.S. Patent Publication No. 6,204,545; Patent Document 3: Patent Publication Japanese Available to the Public No. 2001-168369; Patent Document 4: International Publication No. WO03 / 056633; Patent Document 5: U.S. Patent Publication No. 5,482,568; Patent Document 6: U.S. Patent Publication No. 5,355,873; and Patent Document 7: U.S. Patent Publication No. 2002/0096206.

DESCRIPTION OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION As in the solar battery modules described in the previous publications, when cells of granular solar cells are used spherical or partially spherical, to constitute a module of solar batteries, the number of points for electrically connect the electrodes of the solar battery cells to the positive and negative electrode conductors of the module, and the number of wired connections are increased, which is inconvenient for mass production. When the spherical solar battery cells are mounted in the partially spherical recess centers and the light is collected by the reflective surfaces of the recesses to illuminate the cells of solar batteries with sunlight, there are spaces between the recesses, which is disadvantageous in that the proportion of use of the incident sunlight is increased. In addition, the ratio of the surface receiving light from the recesses that collect light to the surface receiving light from the solar battery cells in a flat view can not be greatly increased. Therefore, it is difficult to increase the output power relative to the light input to the surface of the solar battery module. For the collection of light by means of lenses in a solar battery module that has cells of granular solar batteries, the same number of circular lenses is required in the flat views as in the cells of solar batteries. This large number of lenses complicates the structure. To use a light collection mechanism of the type that reflects light, a cooling mechanism is necessary to effectively cool the cells of solar batteries, because the cells of solar batteries are heated significantly. When the reflecting surface is partially spherical, it is difficult to create a uniform passage of the cooling fluid. In such a case, it is not easy to improve the performance of the Cooling When multiple cells of solar batteries in a solar battery module are connected in parallel, the output voltage of the solar battery module is equal to the output voltage of the solar battery cells. However, it is desirable that the output voltage of the solar battery module can be changed, and in the case of a panel that emits light in which multiple diodes that emit light are installed, the input voltage to the panel can be changed. The object of the invention of the present application is to provide a semiconductor module in the form of a panel using semiconductor elements having an area receiving greater light, without increasing the resistance between the electrodes, providing a semiconductor module in the form of a panel having a smaller number of electrical connection points of the semiconductor elements and wired connections, providing a semiconductor module in the form of a panel having a higher gathering power, providing a semiconductor module in the form of an advantageous panel for forming a part of the lens, and providing a semiconductor module in the form of an advantageous panel for improving cooling performance. 52-562 MEANS TO SOLVE THE PROBLEM. The panel-shaped semiconductor module that relates to the present invention is a semiconductor module that receives or emits panel-shaped light, characterized in that it comprises multiple rod-shaped semiconductor elements, each having the ability to emit or receive light , and an axis and placed in multiple rows and columns with their conducting direction aligned and their axes oriented in the direction of the row, a conductor connection mechanism that electrically connects in parallel multiple semiconductor elements in each row, and electrically connects in series multiple semiconductor elements in each column, and a conductive internal metal housing that houses the multiple semiconductor elements and that constitutes the conductive connection mechanism. The multiple semiconductor elements each have a rod-shaped base, consisting of a po-type semiconductor crystal of type n, another conductive layer formed on a base surface, except for an area strip and having a type of conductivity different from the base, an almost cylindrical pn joint formed by the base and another conductive layer, and first and second electrodes formed on the surface of the base in 52-562 any side of the strip-shaped axis parallel to the axis and connected in an ohmic manner to the area strip of the base and the other conductive layer, respectively. The internal metal casing comprises multiple slits forming a reflective surface, each housing a row of multiple semiconductor elements and having a width that decreases from an opening to the bottom. The slits forming a reflective surface each comprise a background plate that reflects light and a pair of oblique plates that reflect light that extend upwards from either end of the bottom plate in an integrated manner. The bottom plate has a mounting projecting in a central portion in a widthwise direction, in which a corresponding row of multiple semiconductor elements is placed and to which one of the first and second electrodes of the semiconductor elements is electrically connected. Multiple finger leads are electrically connected to one of the oblique plates of each slit forming the reflecting surface and electrically connected to each other of the first and second electrodes of a corresponding row of multiple semiconductor elements. A cutting slot to cut the conductive part that forms a short circuit with the first and second electrodes of a row 52-562 Corresponding multiple semiconductor elements are formed in the bottom plate on one side of the assembly over the entire length of the row.

ADVANTAGES OF THE INVENTION The semiconductor element has a base, another conductive layer having a different type of conductivity than that of the base, a gasket pn, and first and second electrodes. The first and second electrodes are provided on the surfaces of the base on either side of the shaft in the form of a strip parallel to the axis and connected in an ohmic manner to the base and to another conductive layer, respectively. Therefore, the distance between the first and second electrodes never exceeds the diameter of the base, even if the ratio of the axial length to the diameter of the base is increased. Therefore, the ratio can be increased to a desired value. Next, the semiconductor element increases in length, so that the number of points for electrically connecting multiple semiconductor elements can decrease, simplifying the structure of the conductive connection mechanism. The conductor connection mechanism connects in parallel multiple semiconductor elements in each row, and connects multiple elements in series 52-562 semiconductors in each column. When some semiconductor elements fail for some reason, the current flows through an alternating path passing the semiconductor elements with fault, so all the normal semiconductor elements continue to work. The internal metal shell comprises multiple slits forming a reflective surface having a width that decreases from the opening to the bottom. Each slit that forms the reflecting surface comprises a bottom plate that reflects light and a pair of oblique plates that reflect light. A corresponding row of multiple semiconductor elements is placed in a mounting provided in the central portion of the bottom plate of the slit forming the reflecting surface. One of the first and second electrodes of the multiple semiconductor elements is electrically connected to the assembly. Thus, in the case of a semiconductor module receiving light, light collected by the reflecting surfaces of the slits forming a reflecting surface can enter the semiconductor elements. The width at the opening of the slits that form a reflective surface can be three or four times greater or includes much larger than the diameter of the semiconductor elements, to increase the ratio of the slit that forms the 52-562 reflective surface (part of light collection) to the surface that receives light from the semiconductor elements, thereby increasing the amplification to collect light. In other words, a smaller number of semiconductor elements can be used effectively to obtain a high output energy. In addition, the semiconductor elements are placed in a mount projecting from the central portion of the bottom plate of the slit that forms the reflecting surface. The light reflected by the bottom plate can enter the lower half of the semiconductor element. Each row of multiple semiconductor elements is housed in each of the multiple slits forming a reflecting surface. Therefore, multiple cylindrical lenses corresponding to multiple slits forming a reflecting surface, respectively, can be advantageously used. The multiple grooves forming a reflecting surface formed by the internal metal housing each comprise a bottom plate and a pair of oblique plates. The internal metal housing can be constituted by a sheet of a metal plate, reducing the number of parts and simplifying the structure. 52-562 The present invention may have the following several structures as the dependent claims. (1) The finger conductors are each formed by bending a lower end of a notched cutting part formed in the upper half of an oblique plate almost at right angles. (2) The cutting slots of the inner metal housing are each formed by drilling multiple joining rods to form a continuous cutting groove, after which one of the first and second electrodes of each row of multiple semiconductor elements is connected to the assembly and the other of the first and second electrodes is connected to the finger conductor. (3) An outer metal shell fitted on a lower side of the inner metal shell and having a cross section almost similar to that of the inner metal shell and an electrically insulating synthetic resin layer interposed between the first and Second metal covers and internal and external metal covers are joined and integrated via the electrically insulating synthetic resin layer. (4) In (3) above, extensions are provided, each extending beyond any end of the inner metal shell by a predetermined length in the row direction, in 52-562 any end of the outer metal casing in the direction of the row and side plug blocks made of an insulating material are adjusted and fixed to enclose the slots in the housing formed in the extensions. (5) In (4) above, the slits forming a reflecting surface of the inner metal shell are filled with a transparent flexible insulating synthetic resin material, to include the semiconductor elements and the finger conductors therein. (6) In (4) above, a synthetic resin glass cover member is provided fixed to the inner metal housing and the side connector blocks to cover the upper part of the inner metal housing. (7) In (6) above, the cover member has multiple parts of cylindrical lenses that correspond to multiple rows of semiconductor elements, respectively. (8) A conduit member forming a passage for a cooling fluid is provided on an external surface of the outer metal housing. (9) An antireflective coating is formed on the surfaces of the semiconductor elements, except for the areas where the first and second are provided. 52-562 second electrodes. (10) The base of the semiconductor elements is made of a monocrystalline Si or polycrystalline Si of type p, the other conductive layer is formed by spreading P, Sb or As as an impurity of type n, and the semiconductor elements are cells of solar batteries . (11) The base of the semiconductor elements is made of a monocrystalline Si or polycrystalline Si of type n, the other conductive layer is formed by diffusing B, Ga or Al as an impurity of type p, and the semiconductor elements are cells of solar batteries . (12) Semiconductor elements are diode elements that emit light, which have the ability to emit light.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a solar battery module that relates to Modality 1. Figure 2 is a cross-sectional view on line II-II in Figure 1. Figure 3 is a cross-sectional view in line III-III in Figure 1. Figure 4 is a plan view of the solar battery module with a cover member removed. 52-562 Figure 5 is an enlarged view of the central part of Figure 4. Figure 6 is a perspective view of the side plug block. Figure 7 is a perspective view of the central part of the slit forming the reflecting surface of the internal metal casing. Figure 8 is an enlarged cross-sectional view of the semiconductor element. Figure 9 is a cross-sectional view on line IX-IX in Figure 8. Figure 10 is an enlarged perspective view of the semiconductor element. Figure 11 is a circuit diagram equivalent to the conductive connection mechanism. Figure 12 is a perspective view equivalent to Figure 7 of a modified embodiment. Figure 13 is a cross-sectional view equivalent to Figure 2 of a solar battery module that relates to Modality 2. Figure 14 is an amplified cross-sectional view of a semiconductor element that emits light that is related to the Modality 3. Figure 15 is a cross-sectional view on line XIV-XIV in Figure 13. 52-562 DESCRIPTION OF THE NUMBERS M, Ma solar battery module (semiconductor module in the form of a panel) 1 semiconductor element 2 conductive connection mechanism 3 internal metal housing 4 external metal housing 4A extension 5 cover member 5a part of the cylindrical lenses 6 insulating synthetic resin material 7 synthetic resin layer 8 side connector block 11 base 12 diffusion layer 13 gasket pn 14 positive electrode 15 negative electrode 16 antireflection coating before 20 slit forming the reflected surface 21 bottom plate 21a assembly 22, 23 oblique plate 52-562 25, 25A finger conductor 26 cutting groove 35 conduit member 40 semiconductor element emitting light (diode element emitting light) 41 base 42 diffusion layer 43 gasket pn 44 positive electrode 45 negative gasket 46 antireflection coating BEST MODE FOR IMPLEMENTING THE INVENTION The panel-shaped semiconductor module of the present invention basically comprises semiconductor elements that receive or emit light in the form of a rod, placed in multiple rows and columns, a conductive connection mechanism that connects in parallel multiple semiconductor elements in each row and connecting in series multiple semiconductor elements in each column, and an internal metal housing that houses the multiple semiconductor elements and that constitutes the conductive connection mechanism, where the internal metal housing has multiple slits that form a surface reflective that house multiple rows of 52-562 semiconductor elements, respectively, and having a width that decreases from the opening to the bottom. 52-562 MODALITY 1 The panel-shaped semiconductor module that relates to Modality 1 is a module of solar batteries (panel of solar batteries) that receives sunlight and generates electrical energy. This solar battery module M will be described with reference to the drawings. As illustrated in Figures 1 to 5, the solar battery module comprises multiple semiconductor elements 1 having the ability to receive light, a conductive connection mechanism 2 electrically connecting the semiconductor elements 1 (see Figure 11), a housing of internal metal 3 housing the multiple semiconductor elements 1, an outer metal casing 4 fitted on the underside of the internal metal casing 3, a transparent cover member 5 covering the upper part of the internal metal housing 3, a synthetic resin insulating material of silicone rubber 6 inserted in the internal metal housing 3, a layer of synthetic resin 7 joining the covers of internal and external metal 3 and 4, multiple blocks of side plugs 8, and two reinforcement plates 9. As illustrated in Figures 8 to 10, the semiconductor element 1 is a cell of solar batteries in the form of a rod having a axis and an almost circular cross section (a partial circle near a 52-562 circle). The semiconductor element 1 has a rod-shaped base of a monocrystalline silicon of the type p 11, a diffusion layer of the type n 12 (corresponding to another conductive layer having a different type of conductivity than that of the base 11), a joint pn 13, positive and negative electrodes 14 and 15 and an antireflection facing 16. The semiconductor element 1 receives sunlight and generates a photovoltaic power of approximately 0.5 to 0.6 V. The base 11 is a column of monocrystalline silicon of the type p having a diameter of about 1.8 mm and a length of about 5 mm with a flat bottom section in the form of a strip (for example, having a width of about 0.6 mm) parallel to the axis of the column ( see Figure 9). The diffusion layer 12 is a conductive layer of the n-type formed by the thermal diffusion of P (phosphorus) in the part of the surface of the base 11, at a depth of 0.5 to 1.0 μ, except for one strip of area which includes the flat section lia and its vicinity at either end of it. The base of the type p 11 and the diffusion layer of type n 12 together form an almost cylindrical pn joint 13 (a partial cylinder near a cylinder) The joint pn 13 surrounds most of the periphery of the element 52-562 semiconductor 1 around the axis la. A strip of the positive electrode 14 having a width of about 0.4 mm is provided in the flat section Ia of the base 11. A strip of the negative electrode 15 having a width of approximately 0.4 mm is provided on the surface of the base 11 in a position through the axis from the positive electrode 14. The positive electrode 14 is formed by igniting a silver paste mixed with aluminum. The negative electrode 15 is formed by igniting a silver paste mixed with a small amount of antimony. The positive and negative electrodes 14 and 15 are provided on the surface of the base 11 on either side of the axis la in the form of a strip parallel to the axis la. The positive electrode 14 is connected in an ohmic manner to the base 11 and the negative electrode 15 is connected in an ohmic manner to the diffusion layer 12. An anti-reflective coating 16 consisting of a silicon oxide coating or a nitride coating of Silicon is formed on the surface of the semiconductor element 1, except for the areas where the positive and negative electrodes 14 and 15 are provided, for the purpose of antireflection and passivation of the silicon surface. When the semiconductor element 1 is illuminated with sunlight bm and 52-562 the monocrystalline silicon of the base 11 absorbs sunlight, carriers (electrons and holes) are generated, the pn 13 gasket separates the electrons from the holes, and a photovoltaic power is generated between the positive and negative electrodes 14 and 15. Even if the incident direction of sunlight entering the directions perpendicular to the axis changes it, the semiconductor element 1 has a uniform light receiving sensitivity and efficiently receives sunlight bm in a wide range of directions and generates electrical energy . As illustrated in Figure 10, the positive and negative electrodes 14 and 15 are placed almost symmetrically about the axis of the base 11. For the carriers generated in the base 11 after receiving the sunlight bm, the sum of the distances from any circumferentially different point, for example, A, B or C, to the positive and negative electrodes 14 and 15, is almost equal in any plane perpendicular to the axis of the base 11, namely (a + b) = ( a '+ b') »(a" + b "). The distribution of the photoelectric current is uniform with respect to the axis of the base 11 and the loss of resistance due to the non-uniform distribution can be reduced .. As illustrated in Figures 2, 4, 5 and 7, multiple semiconductor elements 1 are placed in multiple rows and columns in multiple slits that they form a reflective surface 20 of the internal metal casing 3 with its direction of conduction aligned and its axes oriented in the direction of the row. Multiple semiconductor elements 1 are placed with their positive electrode 14 in the bottom and their negative electrode 15 in the upper part, so they have a direction of conduction vertically downwards. The internal metal casing 3 is formed by piercing a thin plate of iron / nickel alloy (Ni 42% and Fe 58%) in a monolithic article in a press machine with a matrix with specific shape. The internal surface that receives light from the internal metal casing 3 has a mirror finish or is plated with gold or silver to improve the light reflection performance. As illustrated in Figures 2, 4, 5 and 7, the internal metal housing 3 comprises the same number of slits forming a reflective surface 20 similar to a channel as the rows of semiconductor elements 1, and flanges 3f and terminals of 3a coupling at the right and left ends. The slits forming a reflecting surface 20 have an inverted trapezoidal cross section having a width that decreases linearly from the opening to the bottom. Each slit that forms the reflecting surface 20 comprises a bottom plate 21 and a pair of oblique plates 22 and 23 extending upwards from either end of the bottom plate 21. The upper ends of the oblique plates 22 and 23 of the slits forming a reflective surface 20 adjacent ones are coupled by a narrow coupling plate 24. Each bottom plate 21 has a mounting 21a having a trapezoidal cross-section and protruding upward in the central position in the width direction. A corresponding row of multiple semiconductors 1 is placed in the assembly 21a and its positive electrodes 14 are attached to the assembly 21a using a conductive epoxy resin for the electrical connection. Multiple finger leads 25 extend integrally from the middle of the right oblique plate 23 of each slit forming the reflective surface 20 to electrically connect to the negative electrodes 15 of the corresponding row of multiple semiconductor elements 1, respectively. The negative electrodes 15 of the semiconductor elements 1 are attached to the finger conductors 25, using a conductive epoxy resin for the electrical connection. The finger conductors 25 are each formed by bending the lower end of a notched cutting part formed in the upper half of right oblique plate 23 at a right angle (see Figure 7). As illustrated in Figure 2, a cutting groove 26 is formed in each bottom plate 21 on the right side of the assembly 21a over the entire length in the row direction (the entire length of the inner metal shell 3) to cut the conduction of the multiple positive electrodes 14 of the corresponding row of multiple semiconductor elements 1 to the multiple finger conductors 25 to cut the conductive part forming a short circuit between the positive and negative electrodes 14 and 15 of the corresponding row of multiple semiconductor elements 1. Each cutting groove 26 is formed by piercing the connecting rods (not shown) of multiple perforated portions of the tie rods 26a to form a continuous cutting groove 26 after the positive electrodes 14 of each row of multiple semiconductors 1 are attached to assembly 21a and negative electrodes 15 are attached to finger conductors 25. As described above, after the multiple semiconductor elements 1 are placed in multiple rows and columns in the inner metal housing 3 with their positive electrodes 14 connected to the assembly 21a and their negative electrodes 15 connected to the finger conductors 25 and the cutting slot 26 way in 52-562 the bottom plate 21 of each slit forming the reflective surface 20, the semiconductor elements 1 in each row are connected in parallel by the internal metal casing 3 and multiple finger conductors 25 and multiple semiconductor elements in each column are connected in series by the internal metal housing 3 and multiple finger conductors 25. In this way, the internal metal housing 3 including multiple finger conductors 25, constitutes a conductive connection mechanism 2 that electrically connects in series multiple semiconductor elements 1 in each column and electrically connect in parallel multiple semiconductor elements 1 in each row (see Figure 11). As illustrated in Figures 2 to 5 and 7, an outer metal casing 4 having a cross section almost similar to the internal metal casing 3, fits on the underside of the internal metal casing 3. The casing outer metal 4 is formed by forming the same iron / nickel alloy plate (for example, having a thickness of 0.4 mm) as the internal metal housing 3. The outer metal housing 4 has flanges 4f at either end in the direction of the column. The outer metal casing 4 has at either end in the row direction, extensions 4A extending beyond any end of the casing 52-562 of internal metal 3 in the direction of the row by a predetermined length. The inner and outer metal covers 3 and 4 are joined and integrated together via a layer of electrically insulating synthetic resin 7 (having a thickness of 0.1 to 0.5 mm), consisting of a heat-resistant insulating adhesive such as polyimide resin introduced between them. As illustrated in Figures 3 and 5 to 7, the side plug blocks 8 made of an insulating material (e.g., a ceramic or glass material), fit into the slots of the housing of the cover 27 formed in the extensions. 4A of the outer metal casing 4 and are bonded thereto using a heat-resistant synthetic resin adhesive, such as polyimide resin, to completely seal the ends of the inner metal casing 3 in the row direction. The side connector blocks 8 have an oblique internal surface 8a inclined in a manner similar to the oblique plates 22 and 23 for improved light reception. As illustrated in Figure 2, a flexible transparent silicone rubber insulating synthetic resin material 6 is inserted into the slits forming a reflecting surface 20 of the inner metal housing 3 to include the semiconductor elements 1 and 52-562 the leads of finger 25, degassing under reduced pressure and curing. As illustrated in Figures 1, 2 and 3, there is provided a glass cover member or transparent synthetic resin 5 covering the upper part of the internal metal housing 3 and fixed to the internal metal housing 3 and blocks of metal. side plugs 8. The cover member 5 is desirably made of white reinforced glass or borosilicate glass. The cover member 5 has multiple portions of cylindrical lenses 5a corresponding to multiple rows of semiconductor elements 1, respectively, on the upper portions and coupling portions 5b fitted on the upper portions of multiple slits forming a reflecting surface 20 on the upper part. lower. The cover member 5 has flat portions 5c at the right and left ends in Figures 1 and 2. In order to fix the cover member 5 to the inner metal housing 3, the cover member 5 is attached to the housing of internal metal 3 with a thick layer of silicone resin applied to the entire surface of the underside of the cover member 5, whereby the cover member 5 is bonded to the silicone rubber 6 (insulating synthetic resin material) and the oblique plates 22 and 23 of multiple slits forming a surface 52-562 20, to other portions of the upper surface of the internal metal casing 3, and to the internal sides of multiple lateral plugs 8. Subsequently, the entire structure is heated under reduced pressure to cure the adhesive / sealant material. silicone resin 29. Here, the internal space of each slit forming the reflecting surface 20 is completely filled with the silicone rubber 6 and the adhesive / sealing material 29. The right and left flat portions 5c of the cover member 5 and the flanges 3f and 4f are held together by multiple metal or synthetic resin bolts 30. Here, the bolts 30 are insulated from the flanges 3f. As illustrated in Figures 1 and 3, a polyimide resin reinforcement plate 9 that closes the top of multiple blocks of side plugs 8 is provided and fixed using the same adhesive / sealing material as the adhesive / sealing material. 29 described above, to reinforce the integrity of the multiple blocks of side sockets 8 and the inner metal housing 3. As illustrated in Figures 1 to 5, the coupling end plates 3a are exposed at the right and left ends of the internal metal housing 3 .and extend over the entire length in the 52-562 direction of the row to connect electrically multiple modules of solar batteries or to connect the lines of recovery of the exit. Each coupling terminal plate 3a has multiple holes for bolts 31. Figure 11 shows a circuit equivalent to multiple semiconductor elements 1 and the conductive connection mechanism 2 of the solar battery module M described above. The semiconductor elements 1 are represented by the diodes 1A. In this equivalent circuit, multiple diodes 1A in each row are connected in parallel and multiple diodes 1A in each column are connected in series, whereby all the diodes are connected in series / parallel in a mesh circuit. The photovoltaic power is generated between the positive and negative electrode terminals 18 and 19. The function and advantages of the solar battery module M described above will be described hereinafter. The rod-shaped semiconductor elements 1 of this module of solar batteries M are almost symmetrical around their axes, and can receive sunlight in any direction (directions of more than approximately 270 degrees), exhibiting a sensitivity for a wide angle of reception of light. The housing of 52-562 Internal metal 3 has multiple slits forming a reflective surface 20 having a width that decreases linearly from the opening to the bottom. A row of multiple semiconductors 1 is placed at the bottom of each slit forming the reflecting surface 20. The slit that forms the reflective surface 20 has an internal surface that reflects light. Therefore, sunlight falls on the semiconductor elements 1 after multiple reflections on the inner surface of the slit forming the reflective surface 20. The width at the opening of the slit forming the reflective surface 20 may be 3 to 15 times larger than the diameter of the semiconductor elements 1, so that the ratio of the horizontal area of the slit forming the reflecting surface 20 (light collecting part) to the cross section receiving the projected light of the semiconductor elements 1 in each row, it is increased for a higher harvest power. Therefore, the required number or area that receives light from semiconductor elements 1 can be reduced, which is advantageous because of the cost of silicon and the cost of production. In addition, the semiconductor elements 1 are fixed in the assembly 21a of the bottom plate 21 of the slit forming the reflective surface 20. The light reflected by 52-562 The background plate and scattered light can easily enter the semiconductor elements 1, the semiconductor elements 1 have an interval to receive greater light. In addition, the semiconductor elements 1 can be easily placed and fixed using a conductive epoxy resin. The transparent flexible silicone rubber 6 is used to include the semiconductor elements 1 in the groove forming the reflecting surface 20. The semiconductor elements 1 are completely protected from external impact or moisture or air. The silicone rubber 6 absorbs the expansion or shrinkage of the solar battery module due to temperature changes. The refractive index of the silicone rubber 6 is close to that of the cover member 5 and to the antireflection coating 16, which reduces the reflection loss at the interface. Furthermore, the silicone rubber 6 optically couples the semiconductor elements 1, which makes it easier not only for the direct light collected, but also for the scattered light resulting from multiple internal reflections, from entering the semiconductor elements 1. In addition, the cover member 5 has portions of the cylindrical lenses 5, each corresponding to a groove forming the reflective surface 20. 52-562 Energy intensity of sunlight can be increased approximately 5 to 15 times through the collection of light by the parts of the cylindrical lenses 5a. The output energy of the semiconductor elements 1 can be increased approximately 7 to 15 times through the collection of the light by the parts of the cylindrical lenses 5a and the collection of the light by the slits forming a reflecting surface 20, in comparison with the case of no light collection by them. The conductive connection mechanism 2 connects in parallel multiple semiconductor elements 1 in each row and connects in series multiple semiconductor elements 1 in each column. When some semiconductor elements 1 fail for some reason (disconnection, poor connection, in the shadow, etc.), the current flows through an alternating path passing the semiconductor elements with fault, so all the normal semiconductor elements 1 continue working . The semiconductor elements 1 have an almost column-like rod shape. The positive and negative electrodes 14 and 15 are provided on the surface on either side of the shaft in the form of a strip parallel to the axis and are connected in an ohmic manner to the base 11 or 52-562 the diffusion layer 12. Therefore, no matter how much the axial length / diameter ratio of the base 11 is increased, the distance between the positive and negative electrodes 14 and 15 is smaller than the diameter of the base 11 and the resistance Electrical between the positive and negative electrodes 14 and 15 can be kept small. The semiconductor elements 1 can be increased in length to reduce the number of electrical connections of multiple semiconductor elements 1, thus simplifying the structure of the conductor connection mechanism 2. The solar battery module M is easily heated and, when heated, its Energy generation efficiency decreases. The inner and outer metal covers 3 and 4 are made of a thin metal plate and are integrated together. The internal metal housing 3 has multiple slits forming a reflecting surface similar to a channel 20, of which the inner surfaces serve as a light reflector / collector and the rear sides serve as a radiator. Particularly, the slits forming a reflective surface 20 have a cross-section in the shape of the upwardly projecting mounting 21a of the bottom plate 21, improving stiffness and strength, and increasing the heat dissipation area. Energy 52-562 The thermal absorbed by the solar battery module M is transmitted through the inner metal shell 3, the thin layer of synthetic polyimide resin 7, and the outer metal shell 4 and is released to the outside. The slits forming a reflective surface 20 of the internal metal housing 3 serve as a container for receiving the silicone rubber 6 and as a receiving part for engaging, and positioning the coupling part 5b of the cover member 5. The finger conductors 25 corresponding to the respective semiconductor elements 1 are integrally formed in an oblique plate 23 of a slit forming the reflective surface 20. The finger conductors 25 are attached to the negative electrodes 1 of the semiconductors 1 using a conductive epoxy resin. In this way, the separate connection conductors can be eliminated. The finger conductors 25 can be produced as cut parts with notches formed in the oblique plate 23 while the inner metal housing 3 is produced. With the assembly, the positive electrodes 14 of each row of multiple semiconductors 1 are attached to the assembly 21a using a conductive epoxy resin and then the notched cutting parts are bent to form the finger conductors 25, which then 52-562 bind to the negative electrodes 15 of the semiconductor elements 1, using a conductive epoxy resin. After all the finger conductors 25 are attached to the negative electrodes 15 of the semiconductor elements 1 in a solar battery module M, the connecting rods (not shown) which connect multiple perforated portions of the connecting rods 26a are pierced. . The finger conductors 25 also serve to mark the positions where the semiconductor elements are placed 1. The multiple tie rods serve to maintain the integrity of the internal metal housing 3 while the internal metal housing 3 is formed and allows the internal metal housing 3 is formed of a sheet of a metal plate, reducing the number of parts and simplifying the structure. The partial modifications of the modalities described above will be described hereinafter. 1) As illustrated in Figure 12, in place of the finger conductors 25, connection pieces 50 formed separately from the inner metal housing 3 are provided by drilling a conductive metal, such as a thin plate of iron and nickel , in the portions corresponding to the semiconductor elements 1 and the finger conductors 25A extending horizontally to the left are formed at the lower end of the 52-562 connecting pieces 50. The connection piece 50 is obtained by integrally forming a coupling section 50a to be attached to the coupling part 24 of the internal metal housing 3, the oblique sections 50b and 50c provided on either side of the coupling section 50a to be attached to oblique plates 22 and 23, and finger conductor 25A. For example, the connection piece 50 is attached to the coupling part 24 and the oblique plates 22 and 23 on either side thereof using a conductive epoxy resin and the leading end of the finger conductor 25A is attached to the negative electrode 15 of the corresponding semiconductor element 1 using a conductive epoxy resin for the electrical connection. Here, the coupling section 50a and the oblique sections 50b and 50b have a width of, for example, 2 to 3 mm and the finger conductor 25A has a width of, for example, 0.5 to 1 mm. 2) The solar battery module M described above has nine slits that form a reflective surface 20. However, several tens of rows and several tens of columns can be provided. The materials of the internal metal housing 3, the positive and negative electrodes 14 and 15, and the outer metal housing 4 and various materials of 52-562 Synthetic resin are not restricted to the modality described above, and can be changed by a person with ordinary experience in the field as appropriate. The diameter of the base 11 of the semiconductor elements 1 is not restricted to the modality described above and can be from about 1.0 to 2.5 mm. The axial length of the semiconductor elements 1 is not restricted to the modality described above and can be any length not less than 5.0 mm. The semiconductor elements 1 can have a length that extends over the entire row. In such a case, it is desirable that multiple leads 25 be provided at appropriate intervals in the row direction. 3) The base 11 of the semiconductor elements 1 can be a polycrystalline silicon of the type p and the impurity of the type n which forms the diffusion layer 12 can be Sb or As. Alternatively, the semiconductor elements 1 can comprise a silicon base monocrystalline or polycrystalline of the type n 11 and a diffusion layer 12, having an impurity of the type p such as B, Ga and Al. The joint pn 13 is not necessarily created by the diffusion layer 12. The joint pn 13 can be created by forming a film on the surface of the base 11 or 52-562 by injecting ions into the surface of the base 11 to form another conductive layer having a different conductivity type from that of the base 11. 4) The planar section Ia of the base 11 of the semiconductor elements 1 can be omitted. The base 11 can be in the form of a rod having a circular cross section and the positive electrode has the same shape as the negative electrode 15. In such a case, the positive and negative electrodes can be made of metallic materials of different colors, way that they can be distinguishable from each other. 5) The cross section of the slits forming a reflecting surface 20 of the internal metal housing 3 is not particularly restricted to the modality described above. Any slit having a width that decreases linearly or non-linearly from the opening to the bottom for the light collecting capacity can be used. The internal metal housing 3 of a solar module M can be constituted by multiple molded metal plates.

MODE 2 As illustrated in Figure 13, a solar battery module Ma (semiconductor module in the form of a panel) has a conduit member 35 fitted in the 52-562 lower side of the solar batteries M described above. The solar battery module Ma has the same structure as the solar battery module M, except for the conduit member 35. Therefore, the same components are designated by the same reference number and their explanation will be omitted. The conduit member 35 has an inverted trapezoidal body 35a which forms a cooling passage 36 together with the outer metal casing 4 for a natural forced flow of a cooling fluid such as air and cooling water, and the flanges 35f that are extend from the right and left ends of the body 35a. The flanges 35f are each fastened to the flat plate 5 of the cover member 5, the flange 3f of the internal metal housing 3, and the flange 4f of the outer metal housing 4 by multiple bolts 30 from below. With a cooling such as air and cooling water running through the cooling passage 36, the inner and outer metal covers 3 and 4 and the semiconductor elements 1 can be effectively cooled. Particularly, the inner and outer metal covers 3 and 4 have intricate outer surfaces and consequently have a large heat transfer area. . The semiconductor elements 1 are close to the cooler. Therefore, a high 52-562 cooling performance. MODALITY 3 This mode is related to semiconductor elements that emit light (diodes that emit light) applied to a module of diodes that emit high energy output light with a reflecting mechanism, which is a semiconductor module in the form of a panel. This module of diodes emitting high power output light with a reflective mechanism, comprises semiconductor elements that emit light instead of the semiconductor elements 1 of the solar battery module M described above. The semiconductor element that emits light will be described here later. As illustrated in Figures 14 and 15, a semiconductor element emitting light 40 has a rod-shaped base 41 consisting of a semiconductor crystal of type n, a diffusion layer of type p 42 formed in the surface portion of the base 41 (corresponding to another conductive layer having a different type of conductivity than the base), an almost cylindrical pn joint 43 formed by the base 41 and the diffusion layer 42, positive and negative electrodes 44 and 45, and a antireflective coating ante 46. Base 41 consists of a GaAs crystal of type n that has a diameter of 1.0 mm and a length of 5 52-562 mm with a flat bottom section 41b in the form of a strip (having a width of approximately 0.2 to 0.3 mm) parallel to the axis 41a. The diffusion layer 42 is formed by thermal diffusion of a p-type Zn (zinc) impurity in the surface part of the base 41 to a depth of 0.5 to 1.0 μp ?, except by an area strip consisting of the flat section 41b and its vicinity at either end thereof in the circumferential direction. The positive and negative electrodes 44 and 45 are made of silver-based materials. The negative electrode 44 is provided in the flat section 41b in the center, in the width direction in the form of a strip extending over the entire length and ohmically connected to the base 41. The positive electrode 44 is provided in the surface of the diffusion layer 42 at a position through the axis 41a of the base 41 of the negative electrode 45, and connected in an ohmic manner to the diffusion layer 42. A antireflection facing 46 consisting of a thin oxide coating of silicon or a coating of silicon nitride and having a passivation function, is formed on the surface of the base 41 and the diffusion layer 42, except for the areas where the positive and negative electrodes 44 and 45 are formed. The semiconductor element emitting light 40 emits light 52-562 infrared from near the seal pn 43 when a forward current runs from the positive electrode 44 to the negative electrode 45. Because the pn 43 gasket has a partial cylindrical shape near a cylinder, the infrared light generated crosses the surface of the semiconductor element 40 at a right angle and go outside. Therefore, the loss of internal reflection of the light is reduced, and the emission efficiency is improved compared to the light emitting diode of the prior art having a flat pn joint. In the module diodes that emit high energy output light with a reflective mechanism in which the. semiconductor elements emitting light 40 are installed in place of the semiconductor elements 1 of the modality described above, when a forward current is supplied from the positive terminal to the negative terminal, the forward current flows through all the semiconductor elements that emit light 40, leading to the emission of infrared light. The infrared light emitted from the semiconductor elements emitting light 40 exits through the portions of the cylindrical lenses 5a of the cover member 5 directly from the slit forming the reflective surface 20 or after being reflected on the reflective surfaces. 52-562 The semiconductor elements that emit light 40, increase their light output as the forward current is increased. Nevertheless, the loss by conversion leads to the generation of heat and the rise in temperature, which reduces the efficiency of light emission. The diode module that emits light is excellent in heat dissipation as the solar battery module M described above, and therefore, reduces the rise in module temperature. Therefore, a large light output can be obtained by supplying a large current to a small number of semiconductor elements that emit light 40, reducing the production cost of the diode module that emits light. The diode module that emits light can be a useful industrial infrared generation apparatus, such as a light source of medical equipment, various infrared sensors, and infrared illumination. The partial modifications in the diode module emitting light described above and the semiconductor element emitting light 40 will be described hereinafter. 1) The diode module that emits light may also have a conduit member such as the solar battery module Ma described above. 2) Several diodes that emit light are produced 52-562 using various semiconductor materials and emit light of various wavelengths of light emission according to the characteristics of the semiconductor material. Any diode that emits light produced using such various semiconductor materials can be used. Apart from infrared light, diodes that emit visible or ultraviolet light can also be used. The base can be constituted by a semiconductor crystal, for example, selected from GaAlAs, GaP, InGaP, GaN, GalnN and SiC. The SiC is a crystal and a hexagonal column monocrystal is provided. Such a hexagonal column monocrystal can be used to form the base. The pn junction of the semiconductor element that emits light is not necessarily created by a diffusion layer. The pn joint can also be created by forming a film on the surface of the base or by injecting ions into the surface of the base to create another conductive layer that has a different type of conductivity than that of the base.

INDUSTRIAL APPLICABILITY The solar battery module is applicable to several fields as an apparatus for generating solar energy. The module that emits light is applicable to several fields according to the type of light generated. 52-562

Claims (1)

1. CLAIMS: 1. A semiconductor module that receives or emits light in the form of a panel, comprising: multiple rod-shaped semiconductor elements, each having the ability to receive or emit light and an axis and placed in multiple rows and columns with its direction of aligned conduction and its axes oriented in the direction of the row; a conductor connection mechanism that connects in parallel multiple semiconductor elements in each row and electrically connects in series multiple semiconductor elements in each column; and a conductive internal metal housing that houses the multiple semiconductor elements and constitutes the conductive connection mechanism; each of the multiple semiconductor elements comprises: a rod-shaped base consisting of a p-type or n-type semiconductor crystal; another conductive layer formed on the surface of the base, except for an area strip and having a different conductivity type than the base; an almost cylindrical board formed by the base and the other conductive layer; and first and second electrodes formed in the surfaces of the base on either side of the shaft, in a strip shape parallel to the axis and connected in an ohmic manner to the strip of area of the base and another conductive layer, respectively; the internal metal housing comprises multiple slits forming a reflective surface, each housing a row of multiple semiconductor elements and having a width that decreases from an opening to the bottom; the slits forming a reflective surface each comprise a back plate that reflects light and a pair of oblique plates reflecting light that extend upwards from either end of the bottom plate in an integrated manner; the bottom plate having a mounting projecting in a central portion in the width direction, in which a corresponding row of multiple semiconductor elements is placed and to which one of the first and second electrodes of the semiconductor elements is electrically connected; and multiple metal finger leads electrically connected to one of the oblique plates of each slit forming the reflecting surface and electrically connected to each other of the first and second electrodes of the corresponding row of multiple 52-562 semiconductor elements that are provided, and a cutting slot for cutting a conductive part that forms a short circuit of the first and second electrodes of a corresponding row of multiple semiconductor elements that are formed in the bottom plate on one side of the assembly over the entire length of the row. 2. The panel-shaped semiconductor module according to claim 1; wherein the finger conductors are each formed by bending a lower end of a notched portion formed in the upper half of the oblique plate almost at right angles. 3. The panel-shaped semiconductor module according to claim 2; wherein the cutting grooves of the inner metal housing are each formed by piercing multiple joining rods to form a continuous cutting groove after one of the first and second electrodes of each row of multiple semiconductor elements is connected to the assembly, and the other of the first and second electrodes is connected to the finger conductor. 4. The panel-shaped semiconductor module according to any of claims 1 to 3; wherein an outer metal casing fitted on the underside of the inner metal casing and having a cross section almost similar to that of the inner casing is provided. 52-562 Internal metal shell and a layer of electrically insulating synthetic resin interposed between the inner and outer metal covers, and the inner and outer metal covers are joined and integrated via the electrically insulating synthetic resin layer. 5. The panel-shaped semiconductor module according to claim 4; wherein extensions extending beyond the inner metal casing are provided in the row direction by a predetermined length, at either end of the outer metal casing in the row direction and the side plugs blocks made of an insulating material are fitted in, and are fixed to the slots in the housing formed in the extensions. 6. The panel-shaped semiconductor module according to claim 5; wherein the slits forming a reflective surface of the inner metal shell are filled with a transparent flexible insulating synthetic resin material to include the semiconductor elements and the finger conductors therein. The panel-shaped semiconductor module according to claim 5; wherein a glass or synthetic resin cover member fixed to the inner metal housing and to the side connector blocks for covering the upper part of the inner metal housing is provides 8. The panel-shaped semiconductor module according to claim 7; wherein the cover member has multiple portions of the cylindrical lenses corresponding to multiple rows of semiconductor elements, respectively. 9. The panel-shaped semiconductor module according to any of claims 1 to 3; wherein a duct member forming a passage for a cooling fluid is provided on the external surface of an outer metal casing. 10. The panel-shaped semiconductor module according to any of claims 1 to 3; wherein an antireflective coating is formed on the surfaces of the semiconductor elements, except for areas where the first and second electrodes are provided. 11. The panel-shaped semiconductor module according to any of claims 1 to 3; where the base of the semiconductor elements is made of a monocrystalline Si or polycrystalline Si of the p type, the other conductive layer is formed by spreading P, Sb or As as an impurity of type n, and the semiconductor elements are cells of solar batteries . 12. The panel-shaped semiconductor module according to any of claims 1 to 3; wherein the base of the semiconductor elements is made of a monocrystalline Si or polycrystalline Si of type n, the other conductive layer is formed by diffusing B, Ga or Al as an impurity of type n, and the semiconductor elements are cells of solar batteries. The panel-shaped semiconductor module according to any of claims 1 to 3; wherein the semiconductor elements are elements of diodes that emit light that have the ability to emit light.