MD3291G2 - Process for obtaining fulleren layers - Google Patents
Process for obtaining fulleren layersInfo
- Publication number
- MD3291G2 MD3291G2 MDA20060075A MD20060075A MD3291G2 MD 3291 G2 MD3291 G2 MD 3291G2 MD A20060075 A MDA20060075 A MD A20060075A MD 20060075 A MD20060075 A MD 20060075A MD 3291 G2 MD3291 G2 MD 3291G2
- Authority
- MD
- Moldova
- Prior art keywords
- layers
- obtaining
- sublimation
- fulleren
- zones
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to the technologies for obtaining semiconductor layers, especially for obtaining layers of C60, C70 fullerens of high order, of high purity and doped, in amorphous, polycrystalline and monocrystalline state, of relatively great thickness, meant for manufacturing memory elements with information high density, protecting screens, power sources, electronic and optoelectronic elements.The process, according to the invention, consists in that it includes the fulleren sublimation by heating of evaporation zone up to temperatures exceeding the crystallization temperature and creation of positive temperature gradient and vapour condensation onto a support. Obtaining of fullerene layers is carried out in closed volume, divided into independent zones with uniform temperatures. The sublimation of fullerens and, optionally, of doping substances (composite materials) is carried out up to saturated vapours and stable partial pressure. Passing of vapours from the sublimation zones into the condensation zone takes place through a guiding section. The temperature gradients between the zones are established according to the conditions of vapour condensation onto the uniformly heated support and the layer growth rate.The result of application of the process consists in obtaining fulleren layers of high purity and composite layers of predetermined composition, with uniform thickness within great limits, homogeneous in structure, with uniform distribution of doping elements, with stable electric and optical properties.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060075A MD3291G2 (en) | 2006-03-02 | 2006-03-02 | Process for obtaining fulleren layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20060075A MD3291G2 (en) | 2006-03-02 | 2006-03-02 | Process for obtaining fulleren layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD3291F1 MD3291F1 (en) | 2007-04-30 |
| MD3291G2 true MD3291G2 (en) | 2007-11-30 |
Family
ID=38164585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20060075A MD3291G2 (en) | 2006-03-02 | 2006-03-02 | Process for obtaining fulleren layers |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3291G2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09288197A (en) * | 1996-02-20 | 1997-11-04 | Toshiba Corp | Reactor bottom part working device and method |
| RU2135648C1 (en) * | 1997-06-11 | 1999-08-27 | Санкт-Петербургский государственный технический университет | Method of preparing crystalline fullerenes |
-
2006
- 2006-03-02 MD MDA20060075A patent/MD3291G2/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09288197A (en) * | 1996-02-20 | 1997-11-04 | Toshiba Corp | Reactor bottom part working device and method |
| RU2135648C1 (en) * | 1997-06-11 | 1999-08-27 | Санкт-Петербургский государственный технический университет | Method of preparing crystalline fullerenes |
Also Published As
| Publication number | Publication date |
|---|---|
| MD3291F1 (en) | 2007-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zheng et al. | Space‐Confined Synthesis of 2D All‐Inorganic CsPbI3 Perovskite Nanosheets for Multiphoton‐Pumped Lasing | |
| Deng et al. | Anisotropic strain relaxation of graphene by corrugation on copper crystal surfaces | |
| Park et al. | Epitaxial graphene growth by carbon molecular beam epitaxy (CMBE) | |
| Zhao et al. | The influence of thermal gradient on pyrocarbon deposition in carbon/carbon composites during the CVI process | |
| He et al. | Beaklike SnO2 nanorods with strong photoluminescent and field‐emission properties | |
| Tan et al. | Self‐aligned single‐crystalline hexagonal boron nitride arrays: toward higher integrated electronic devices | |
| Zhou et al. | Vertically aligned Zn2SiO4 nanotube/ZnO nanowire heterojunction arrays | |
| KR102100925B1 (en) | Substrate assembly, method of forming the substrate assembly, and electronic device comprising the same | |
| Yakuphanoglu et al. | Temperature dependence of the optical band gap and refractive index of poly (ethylene terepthalate) oligomer–DDQ complex thin film | |
| Zhang et al. | High‐speed preparation of< 111>‐and< 110>‐oriented β‐SiC films by laser chemical vapor deposition | |
| Chen et al. | Amplifying surface energy difference toward anisotropic growth of all‐inorganic perovskite single‐crystal wires for highly sensitive photodetector | |
| JP6190562B2 (en) | Graphene growth method | |
| Liu et al. | UV surface‐enhanced Raman scattering properties of SnSe2 nanoflakes | |
| Nakayama et al. | Super H2O-barrier film using Cat-CVD (HWCVD)-grown SiCN for film-based electronics | |
| Silva et al. | Direct synthesis of electrowettable carbon nanowall–diamond hybrid materials from sacrificial ceramic templates using HFCVD | |
| Wang et al. | Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism | |
| Rani et al. | Effect of swift heavy ion irradiation on structure, optical, and gas sensing properties of SnO2 thin films | |
| Yuan et al. | Direct chemical vapor deposition synthesis of graphene super-hydrophobic transparent glass | |
| Vettumperumal et al. | Enhancement of optical conductivity in the ultra-violet region of Cs doped ZnO sol gel thin films | |
| Liu et al. | Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+/Yb3+ Co‐doped WS2 Monolayer | |
| Wang et al. | Selective‐Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration | |
| Wei et al. | Synthesis and Growth Mechanism of SiC/SiO 2 Nanochains Heterostructure by Catalyst‐Free Chemical Vapor Deposition | |
| Van Khai et al. | Diameter‐and density‐controlled synthesis of well‐aligned ZnO nanowire arrays and their properties using a thermal evaporation technique | |
| KR20160144194A (en) | Method for preparing graphene using solid carbon source | |
| Vemuri et al. | A powerful approach to develop nitrogen-doped graphene sheets: theoretical and experimental framework |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |