MD2013F1 - Solar cell - Google Patents
Solar cellInfo
- Publication number
- MD2013F1 MD2013F1 MD20010247A MD20010247A MD2013F1 MD 2013 F1 MD2013 F1 MD 2013F1 MD 20010247 A MD20010247 A MD 20010247A MD 20010247 A MD20010247 A MD 20010247A MD 2013 F1 MD2013 F1 MD 2013F1
- Authority
- MD
- Moldova
- Prior art keywords
- frontal
- solar cell
- barier
- monocrystal
- potential
- Prior art date
Links
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention refers to the unconventional power sources, namely, to the solar power transformers. The solar cell includes a Si monocrystal having on its frontal surfaces a potential barier of MOS or Shottky type, as well as ohmic contacts applied on its frontal and back surfaces. On the monocrystal frontal and back surfaces there are formed a porous nanometric structure, and the potential barier volume charge field includes a porous nanometric structure.Claims: 1Fig.: 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20010247A MD2013G2 (en) | 2001-07-31 | 2001-07-31 | Solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20010247A MD2013G2 (en) | 2001-07-31 | 2001-07-31 | Solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
MD2013F1 true MD2013F1 (en) | 2002-09-30 |
MD2013G2 MD2013G2 (en) | 2003-04-30 |
Family
ID=19739917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20010247A MD2013G2 (en) | 2001-07-31 | 2001-07-31 | Solar cell |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD2013G2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD3737G2 (en) * | 2007-03-26 | 2009-05-31 | Институт Прикладной Физики Академии Наук Молдовы | Bilateral solar cell and process for manufacture thereof |
MD4182C1 (en) * | 2011-04-15 | 2013-04-30 | Государственный Университет Молд0 | Semiconductor device with relief p-n junction (embodiments) |
MD4261B1 (en) * | 2011-05-12 | 2013-11-30 | Государственный Университет Молд0 | Method for manufacturing a semiconductor device with relief p-n junction (embodiments) |
-
2001
- 2001-07-31 MD MDA20010247A patent/MD2013G2/en unknown
Also Published As
Publication number | Publication date |
---|---|
MD2013G2 (en) | 2003-04-30 |
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