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Application filed by Univ De Stat Din MoldovafiledCriticalUniv De Stat Din Moldova
Priority to MD99-0249ApriorityCriticalpatent/MD1653G2/en
Publication of MD1653F1publicationCriticalpatent/MD1653F1/en
Publication of MD1653G2publicationCriticalpatent/MD1653G2/en
The invention refers to the radio electronic engineering and may be used for obtaining thin-filmed heterostructures of the AIIBVI binary compounds for photoresistors and phototransformers manufacturing. A process for obtaining thin-filmed heterostructures on the AIIBVI binary compounds basis includes vacuum deposition on the support at presence of the temperature gradient between the evaporator and the support, of a compounds stratum with a narrow-band component by means of evaporation in the quasi-closed volume at further heat and chemical treatment and of a compounds stratum with wide-band component by means of discrete evaporation.Claims: 1Fig.: 3
MD99-0249A1999-10-121999-10-12Process for thin-filmed heterostructures obtaining
MD1653G2
(en)
Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device