ИНСТИТУТ ЭЛЕКТРОННОЙ ИНЖЕНЕРИИ И НАНОТЕХНОЛОГИЙ "D. Ghitu"
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Priority to MDS20200070ApriorityCriticalpatent/MD1601Z/en
Publication of MDS20200070U2publicationCriticalpatent/MDS20200070U2/en
Publication of MD1601YpublicationCriticalpatent/MD1601Y/en
Publication of MD1601ZpublicationCriticalpatent/MD1601Z/en
The invention relates to the technology for producing thermoelectric materials based on bismuth with high power factor and can be used for producing thermoelectric energy in extreme conditions.The thermoelectric material based on bismuth, according to the invention, is produced by introducing 0.001 at.% Te into the Bi0.94 Sb0.06 alloy by thermal synthesis and is made by the Ulitovsky method in the form of microwire in glass insulation.
MDS20200070A2020-07-092020-07-09Thermoelectric material based on bismuth
MD1601Z
(en)
A kind of selenium tin compound semiconductor core/glass-clad composite material thermoelectric fiber and preparation method thereof with high thermoelectric figure of merit