LV15381B - Fe2o3/ca2fe2o5 photocatalyst system - Google Patents
Fe2o3/ca2fe2o5 photocatalyst system Download PDFInfo
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- LV15381B LV15381B LVP-17-40A LV170040A LV15381B LV 15381 B LV15381 B LV 15381B LV 170040 A LV170040 A LV 170040A LV 15381 B LV15381 B LV 15381B
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- 239000011941 photocatalyst Substances 0.000 title claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 239000002244 precipitate Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000012266 salt solution Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000000576 coating method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052729 chemical element Inorganic materials 0.000 description 4
- 230000001699 photocatalysis Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000033116 oxidation-reduction process Effects 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000006479 redox reaction Methods 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 238000013032 photocatalytic reaction Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000004887 air purification Methods 0.000 description 1
- 230000000844 anti-bacterial effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000012254 powdered material Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/0018—Mixed oxides or hydroxides
- C01G49/0036—Mixed oxides or hydroxides containing one alkaline earth metal, magnesium or lead
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/002—Mixed oxides other than spinels, e.g. perovskite
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/76—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36
- B01J23/78—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper combined with metals, oxides or hydroxides provided for in groups B01J23/02 - B01J23/36 with alkali- or alkaline earth metals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/40—Catalysts, in general, characterised by their form or physical properties characterised by dimensions, e.g. grain size
- B01J35/45—Nanoparticles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0201—Impregnation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/03—Precipitation; Co-precipitation
- B01J37/031—Precipitation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/082—Decomposition and pyrolysis
- B01J37/086—Decomposition of an organometallic compound, a metal complex or a metal salt of a carboxylic acid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/082—Decomposition and pyrolysis
- B01J37/088—Decomposition of a metal salt
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Description
[001] Izgudrojums attiecas uz ūdens attīrīšanas tehnoloģiju nozari un ir paredzēts lietošanai fotokatalīzes procesos redzamajā gaismā, piemēram, ūdens attīrīšanas reaktoros.The present invention relates to the field of water purification technology and is intended for use in visible light in photocatalysis processes, for example in water purification reactors.
Zināmais tehnikas līmenis [002] Fotokatalizators ir pusvadītāja savienojums, kurš absorbē gaismu ar enerģiju, lielāku par tā aizliegtās zonas enerģiju, un gaismas absorbcijas rezultātā veidojas elektronu un caurumu pāri, kas, ja tos nerekombinē, piedalās oksidēšanās-reducēšanās reakcijās uz fotokatalizatora virsmas ar adsorbēto ūdeni un skābekli no apkārtējās vides [1]. Rezultātā veidojas brīvie radikāļi, kas ir ļoti spēcīgi oksidētāji un reaģē gandrīz ar jebkuru organisko savienojumu, to noārdot līdz CO2 un H2O.BACKGROUND OF THE INVENTION A photocatalyst is a semiconductor compound that absorbs light with energy greater than that of its forbidden zone, and as a result of light absorption produces pairs of electrons and holes which, if not recombined, participate in oxidation-reduction reactions on the adsorbed surface of the photocatalyst water and oxygen from the environment [1]. The result is the formation of free radicals, which are very strong oxidants and react with almost any organic compound to decompose to CO2 and H2O.
[003] Šobrīd komerciāli pieejamais T1O2 fotokatalizators nav aktīvs redzamajā (saules) gaismā [2], jo tā aizliegtās zonas enerģija ir 3,2 eV - elektroni un caurumi var tikt inducēti ultravioletajā (UV) gaismā.Currently, the commercially available T1O2 photocatalyst is not active in visible (sun) light [2] because its exclusion zone energy is 3.2 eV - electrons and holes can be induced in ultraviolet (UV) light.
[004] Redzamajā gaismā aktīvi fotokatalizatori vai to sistēmas, kuras būtu pietiekami stabilas, ekonomiski izdevīgi ražojamas ar industrializējamām metodēm, komerciāli nav pieejamas.[004] In the visible light, active photocatalysts or systems thereof that are sufficiently stable, economically advantageous to be produced by industrialized methods, are not commercially available.
[005] Foto katalizatoru sistēmas ir pusvadītāju savienojumu kombinācija, kas tiek veidotas ar mērķi samazināt rekombināciju [3] un/vai uzlabot gaismas absorbcijas spēju [4]. Ir zināmas dažāda veida pusvadītāju sistēmas ar atšķirīgu lādiņu pārneses mehānismu [5]. Par efektīvākajām fotokatalizatoru sistēmām tiek uzskatītas sistēmas ar Z-shēmas fotoinducēto lādiņu pārneses mehānismu, jo sistēmai ir augsts redzamās gaismas absorbcijas potenciāls un zemāka fotoinducēto lādiņu rekombinācija, kā arī augsts oksidēšanās-reducēšanās potenciāls [6]· [006] Fotokatalizatoru sistēmās ar Z-shēmas fotoinducēto lādiņu mehānismu starp pusvadītājiem pastāv omiskais kontakts, kurš nodrošina fotoinducēto elektronu, no pusvadītāja ar pozitīvāku vadāmības zonas potenciālu, rekombināciju ar fotoinducētiem elektronu caurumiem, no pusvadītāja ar negatīvāku valences zonas potenciālu. Tādējādi fotoinducētie elektroni no pusvadītāja ar negatīvāko vadītspējas potenciālu un fotoinducētie elektronu caurumi no pusvadītāja ar pozitīvāko valences zonas potenciālu paliek neskarti un piedalās red-oks reakcijās.[005] Photo catalyst systems are a combination of semiconductor compounds designed to reduce recombination [3] and / or to improve light absorption [4]. Different types of semiconductor systems with different charge transfer mechanisms are known [5]. Systems with a Z-scheme photoinduced charge transfer mechanism are considered to be the most efficient photocatalyst systems because of their high visible light absorption potential and lower photoinduced charge recombination as well as high oxidation-reduction potential [6] · [006] Z-schemes photocatalyst systems There is an intrinsic contact between the photoinduced charge mechanism between the semiconductors, which provides the photoinduced electron, from the semiconductor with a more positive conductivity zone potential, from the recombination with the photoinduced electron holes, from the semiconductor with a negative valence zone potential. Thus, the photoinduced electrons from the semiconductor with the negative conductivity potential and the photoinduced electron holes from the semiconductor with the most positive valence potential remain intact and participate in redox reactions.
[007] Ir zināmi Z-shēmas savienojumi omiskā kontakta nodrošināšanai, kas satur cēlmetālu [7] vai savā starpā sapāroti n- un p- tipa pusvadītājos [8, 9]. Trūkumi zināmajām foto katalizatoru sistēmām ar Z-shēmas fotoinducēto lādiņu pārneses mehānismu ir šādi:[007] Z-circuit compounds for providing ohmic contact containing noble metal [7] or paired n- and p-type semiconductors [8, 9] are known. The disadvantages of known photo-catalyst systems with Z-circuit photoinduced charge transfer mechanism are as follows:
(i) komplicētas sintēzes metodes; (ii) nepieciešamība izmantot dārgus reaģentus; (iii) nepieciešamība izmantot toksiskus reaģentus; (iv) sastāvā iekļauti reti sastopami (dārgi) ķīmiskie elementi; (v) ierobežota sistēmu stabilitāte.(i) complicated synthesis methods; (ii) the need to use expensive reagents; (iii) the need to use toxic reagents; (iv) contains rare (expensive) chemical elements; (v) limited stability of systems.
[008] Tuvākā zināmā p- un n- tipa šauras aizliegtās zonas fotokatalizatoru sistēma ir РегОз/СщО [9] (izvēlēta par prototipu). Šajā sistēmā izmantotais Cu?O savienojums ir nestabils [10], kā arī heterostruktūras sintēzē izmantota komplicēta solvotermālā metode [9].[008] The closest known p- and n-type narrow-band photocatalyst system is РегОз / СщО [9] (selected as a prototype). The Cu? O compound used in this system is unstable [10] as well as the complex solvothermal method used in heterostructure synthesis [9].
Izgudrojuma mērķis un būtība [009] Izgudrojuma mērķis ir izstrādāt jaunu fotokatalizatoru sistēmu ar Z-shēmas fotoinducēto lādiņu pārneses mehānismu no dabā plaši sastopamiem ķīmiskajiem elementiem un to pusvadītāju savienojumiem ar šauru aizliegto zonu, izmantojot rūpnieciski izmantojamas ūdens sintēzes metodes.OBJECTIVE AND SUMMARY OF THE INVENTION The object of the present invention is to provide a novel photocatalyst system with a Z-scheme photoinduced charge transfer mechanism from naturally occurring chemical elements and their semiconductor compounds with a narrow exclusion zone using industrially available water synthesis methods.
[010] Izgudrojuma mērķis sasniegts, veidojot РегОз/СагРегОз fotokatalizatoru sistēmu. Izgudrojuma atšķirīgās pazīmes: (i) izmantota jauna savienojumu sistēma no dabā plaši sastopamiem ķīmiskiem elementiem; (ii) iegūšanai izmantotas ūdens sintēzes metodes.[010] The object of the present invention has been achieved by the creation of a Rehgoss / Sahrberg photocatalyst system. Distinctive features of the invention: (i) a novel compound system of naturally occurring chemical elements is used; (ii) water synthesis methods used.
[011] Fotokatalizatoru savienojumu РегОз/СагРегОз sistēmai ir Z-shēmas fotoinducēto lādiņu pārneses mehānisms - piemīt augsts oksidēšanās-reducēšanās potenciāls. РегОз ir n-tipa pusvadītājs, bet СагРегОз ir p-tipa pusvadītājs, n- un p- tipa pusvadītāju sapārošana vienā sistēmā nodrošina Z-shēmas lādiņu pārneses mehānismu. Šajā gadījumā tiek saglabāts īpaši liels skaits fotoģenerēto caurumu un elektronu oksidēšanās-reducēšanās reakcijām (parasti absolūti lielākais fotoinducēto elektronu un caurumu vairākums rekombinē, izdalot enerģiju siltuma veidā) uz fotokatalizatora virsmas, kā arī šo lādiņnesēju oksidēšanāsreducēšanās potenciāls dotajā fotokatalizatoru sistēmā (Z-shēma) tiek saglabāts maksimāli augsts.The system of photocatalysts of Ragszz / Zarzegzz has a Z-scheme photo-induced charge transfer mechanism with high oxidation-reduction potential. РегОз is an n-type semiconductor, while SergРзз is a p-type semiconductor, the pairing of n- and p-type semiconductors in one system provides a mechanism for transferring the Z-circuit charge. In this case, a particularly large number of photo-generated holes and electrons for oxidation-reduction reactions (usually the absolute majority of photo-induced electrons and holes recombine by dissipating energy in the form of heat) on the surface of the photocatalyst and the oxidation reduction potential of these carriers stored at maximum high.
[012] Fotokatalizatoru savienojumu РегОз/СагРегОз sistēmai ir šādas priekšrocības: (i) pusvadītāji РегОз un СагРегОз ir ar šauru aizliegto zonu, tāpēc absorbē redzamo gaismu fotokatalītiskas reakcijas iespējamas saules gaismā, saules gaismas izmantošana ir pamats nulles enerģijas fotokatalīzes procesiem; (ii) fotokatalizatoru savienojumu РегОз/СагРегОз sistēmas sastāvā iekļauti dabā plaši sastopami ķīmiskie elementi - Fe, Ca un O; (iii) sistēmā iekļautie РегОз un СагРегОз pusvadītāju savienojumi fotokatalīzes reakcijās ir stabili; (iv) fotokatalizatoru savienojumu ЕегОз/СагРегСЬ sistēma iegūstama ar industrializējamām uz ūdeni balstītām ķīmiskajām metodēm.The system of photocatalyst compounds Rehgezz / Sagregg has the following advantages: (i) Raggaz and Raggezz semiconductors have a narrow exclusion zone, thus absorbing visible light photocatalytic reactions in possible sunlight, the use of sunlight is the basis for zero energy photocatalysis processes; (ii) the photocatalyst Rege / SAGREGOS system contains naturally occurring chemical elements - Fe, Ca and O; (iii) the RGB and RGB semiconductor compounds in the system are stable in the photocatalytic reactions; (iv) The EEG / SAG system of photocatalysts is obtainable by industrially water-based chemical methods.
[013] Fotokatalizatoru savienojumu РезОз/СагРезОз sistēma izmantojama fotokatalīzes procesos redzamajā gaismā: (i) ūdens attīrīšanā; (ii) dezinfekcijā; (iii) gaisa attīrīšanā; (iv) sterilām virsmām; (v) ūdens šķelšanai; (vi) ķīmisko savienojumu iegūšanai no apkārtējās vides CO2. Fotokatalizatoru savienojumu РезОз/СагРезОз sistēmu pārklājumi var kalpot kā antibakteriālas vai gaisu attīrošas virsmas, kas sniedz minēto efektu pie iekštelpas apgaismojuma.A photocatalyst compound system for use in visible light in photocatalytic processes: (i) water purification; (ii) disinfection; (iii) air purification; (iv) sterile surfaces; (v) water splitting; (vi) production of chemical compounds from ambient CO2. Coating systems for photocatalyst compound systems can serve as anti-bacterial or air purifying surfaces that provide this effect in indoor lighting.
[014] Fotokatalizatoru savienojumu РезОз/СагРезОз sistēmu iespējams izmantot gan pulverveida produktu iegūšanā, gan pārklājumos. Pulverveida materiālus iespējams izmantot fotokatalīzes reaktoru izgatavošanā vai jau esošu fotokatalizatoru reaktoru uzlabošanā, ļaujot kā gaismas avotu izmantot redzamo gaismu, nevis UV starojumu. Redzamās gaismas starojuma avoti patērē mazāk enerģijas un ir ievērojami lētāki.[014] The Razzez / Sagarzocz compound photocatalyst system can be used for both powdered products and coatings. Powdered materials can be used to make photocatalytic reactors or to upgrade existing photocatalyst reactors, allowing visible light instead of UV light to be used as a light source. Visible light sources consume less energy and are significantly cheaper.
[015] Fotokatalizatoru savienojumu FeiCh/CaiFeiOs sistēmu iegūšanas paņēmiens ir raksturīgs ar to, ka dzelzs saturošas amorfa rakstura nanoizmēra nogulsnes piesūcina ar Ca saturošu sāļu šķīdumu un termiski apstrādā: (i) žāvē temperatūrā līdz 100 °C pietiekama temperatūra, lai iztvaicētu ūdeni, žāvē tik ilgi, kamēr sauss; (ii) apdedzina temperatūrā līdz 1100 °C 1 stundu. Apdedzināšana par 1100 °C augstākās temperatūrās var izraisīt savienojumu reducēšanos, kāda elementa iztvaikošanu vai citu savienojumu veidošanos. Ilgāka apdedzināšana samazina īpatnējo virsmu, kas samazinās savienojumu aktivitāti.[015] A process for preparing photocatalyst compound FeiCh / CaiFeiOs systems is characterized in that the iron-containing amorphous nanoparticulate precipitate is impregnated with a Ca-containing salt solution and heat-treated: (i) dried to a temperature sufficient to 100 ° C to evaporate the water; as long as dry; (ii) calcined at 1100 ° C for 1 hour. Burning at temperatures above 1100 ° C may result in reduction of compounds, evaporation of some element or formation of other compounds. Prolonged firing reduces the specific surface area, which will reduce the activity of the compounds.
Izgudrojuma realizācijas piemēri [016] 1. piemērs: pulverveida produktu sintēzē sākotnēji vienādās tilpuma attiecībās: sajauc 0,1 M Fe(NO3)3'9H2O ūdens šķīdumu ar 0,5 M urotropīna ūdens šķīdumu, iegūstot Fe staurošas nogulsnes. Nogulsnes filtrē un mazgā ar ūdeni. Pēc mazgāšanas caur nogulšņu slāni filtrē 1 M Са(ЫОз)2 ūdens šķīdumu. Nogulsnes žāvē 60 °C temperatūrā 1 stundu un termiski apstrādā (apdedzina) 820 °C temperatūrā 20 minūtes.EXAMPLES FOR CARRYING OUT THE INVENTION Example 1: Synthesizing a powder product initially in an equal volume ratio: mix 0.1 M Fe (NO3) 3'9H2O aqueous solution with 0.5 M aqueous urotropin solution to give a Fe precipitating precipitate. The precipitate is filtered off and washed with water. After washing through the sediment layer, filter 1 M Са (ЫОз) 2 aqueous solution. The precipitate is dried at 60 ° C for 1 hour and heat-treated at 820 ° C for 20 minutes.
[017] 2. piemērs: pārklājumu sintēzē Fe saturošu nogulšņu slāni uznes uz elektrovadoša substrāta (darba elektroda) virsmas, izmantojot elektroķīmisko nogulsnēšanu no 0,02 M FeCb ūdens šķīduma izmantojot Pt stiepli kā palīgelektrodu un pieliekot ārējās ķēdes potenciālu 1,2 V. Iegūto slāni iemērc 1 M CafNChh ūdens šķīdumā 1 minūti. Pārklājumu žāvē 60 °C temperatūrā 1 stundu un termiski apstrādā (apdedzina) 820 °C temperatūrā 20 minūtes.Example 2: In the synthesis of coatings, a layer of Fe-containing precipitate is deposited on the surface of an electrically conductive substrate (working electrode) using electrochemical precipitation from a 0.02 M FeCb aqueous solution using a Pt wire as an auxiliary electrode and applying an external circuit potential of 1.2 V. soak in 1 M CafNChh aqueous solution for 1 minute. The coating is dried at 60 ° C for 1 hour and heat-treated at 820 ° C for 20 minutes.
[018] Nogulsnes gan pulverveida, gan pārklājumu izgatavošanai ir amorfa rakstura, un to atsevišķu daļiņu izmēri ir mazāki par 100 nm.[018] The pellets for both powder and coating applications are amorphous and have individual particle sizes of less than 100 nm.
Izmantotie informācijās avoti [1] Akira Fujishima, Kenichi Honda, Electrochemical Photolysis of Water at a Semiconductor Electrode, Nature 238 (1972) 37-38.Sources of Information Used [1] Akira Fujishima, Kenichi Honda, Electrochemical Photolysis of Water at a Semiconductor Electrode, Nature 238, 37-38 (1972).
[2] Shama Rehman, Ruh Ullah, A.M. Butt, N.D. Gohar, Strategies of making TiCh and ZnO visible light active, J. Hazard. Mater. 170 (2009) 560-569.[2] Shama Rehman, Ruh Ullah, A.M. Butt, N.D. Gohar, Strategies of making TiCh and ZnO visible light active, J. Hazard. Mater. 170 (2009) 560-569.
[3] Li Li, Paul A. Salvador and Gregory S. Rohrer, Photocatalysts with internal electric fields, Nanoscale 6 (2014) 24-42.[3] Li Li, Paul A. Salvador and Gregory S. Rohrer, Photocatalysts with Internal Electric Fields, Nanoscale 6 (2014) 24-42.
[4] Yajun Wang, Qisheng Wang, Xueying Zhan, Fengmei Wang, Muhammad Safdar and Jun He, Visible light driven type II heterostructures and their enhanced photocatalysis properties: a review, Nanoscale 5 (2013) 8326-8339.[4] Yajun Wang, Qisheng Wang, Xueying Zhan, Fengmei Wang, Muhammad Safdar and Jun He, Visible Light Driven Type II Heterostructures and Their Enhanced Photocatalytic Properties: A Review, Nanoscale 5 (2013) 8326-8339.
[5] Roland Marschall, Semiconductor Composites: Strategies for Enhancing Charge Carrier Separation to Improve Photocatalytic Activity, Adv. Funct. Mater. 24 (2014) 2421-2440.[5] Roland Marschall, Semiconductor Composites: Strategies for Enhancing Charge Carrier Separation to Improve Photocatalytic Activity, Adv. Funct. Mater. 24 (2014) 2421-2440.
[6] Peng Zhou, Jiaguo Yu, Mietek Jaroniec, All-Solid-State Z-Scheme Photocatalytic Systems, Adv. Mater. 2014, 26, 4920-4935.[6] Peng Zhou, Jiaguo Yu, Mietek Jaroniec, All-Solid-State Z-Scheme Photocatalytic Systems, Adv. Mater. 2014, 26, 4920–4935.
[7] Houfen Li, Hongtao Yu, Xie Quan, Shuo Chen, Yaobin Zhang, Uncovering the Key Role of the Fermi Level of the Electron Mediator in a Z-Scheme Photocatalyst by Detecting the Charge Transfer Process of WOj-metaLgCLXU (Metal = Cu, Ag, Au), ACS Appl. Mater. Interfaces 8 (2016) 2111-2119.[7] Houfen Li, Hongtao Yu, Xie Quan, Shuo Chen, Yaobin Zhang, Uncovering the Key Role of the Fermi Level of the Electron Mediator in a Z-Scheme Photocatalyst by Detecting the Charge Transfer Process of WOj-metaLgCLXU (Metal = Cu , Ag, Au), ACS Appl. Mater. Interfaces 8 (2016) 2111-2119.
[8] Nagarajan Srinivasan, Etsuo Sakai, Masahiro Miyauchi, Balanced Excitation between Two Semiconductors in Bulk Heterojunction Z-Scheme System for Overall Water Splitting, ACS Catal. 6 (2016) 2197-2200.[8] Nagarajan Srinivasan, Etsuo Sakai, Masahiro Miyauchi, Balanced Excitation between Two Semiconductors in Bulk Heterojunction Z-Scheme System for Overall Water Splitting, ACS Catal. 6 (2016) 2197-2200.
[9] Ji-Chao Wang, Lin Zhang, Wen-Xue Fang, Juan Ren, Yong-Yu Li, Hong-Chang Yao, Jian-She Wang, Zhong-Jun Li, Enhanced Photoreduction CO2 Activity over Direct Z-Scheme а-РегОз/СигО Hetero structures under Visible Light Irradiation, ACS Appl. Mater. Interfaces 7 (2015) 8631-8639.[9] Ji-Chao Wang, Lin Zhang, Wen-Xue Fang, Juan Ren, Yong-Yu Li, Hong-Chang Yao, Jian-She Wang, Zhong-Jun Li, Enhanced Photoreduction CO2 Activity Over Direct Z-Scheme а- РегОз / СигО Hetero structures under Visible Light Irradiation, ACS Appl. Mater. Interfaces 7 (2015) 8631-8639.
[10] Lingling Wu, Lok-kun Tsui, Nathan Swami, Giovanni Zangari, Photoelectrochemical Stability of Electrodeposited Cu?O Films, J. Phys. Chem. С 114 (2010) 11551-11556.[10] Lingling Wu, Lok-kun Tsui, Nathan Swami, Giovanni Zangari, Photoelectrochemical Stability of Electrodeposited Cu? O Films, J. Phys. Chem. С 114 (2010) 11551–11566.
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