LU72684A1 - - Google Patents
Info
- Publication number
- LU72684A1 LU72684A1 LU72684A LU72684A LU72684A1 LU 72684 A1 LU72684 A1 LU 72684A1 LU 72684 A LU72684 A LU 72684A LU 72684 A LU72684 A LU 72684A LU 72684 A1 LU72684 A1 LU 72684A1
- Authority
- LU
- Luxembourg
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LU72684A LU72684A1 (instruction) | 1975-06-09 | 1975-06-09 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LU72684A LU72684A1 (instruction) | 1975-06-09 | 1975-06-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
LU72684A1 true LU72684A1 (instruction) | 1975-09-29 |
Family
ID=19727954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LU72684A LU72684A1 (instruction) | 1975-06-09 | 1975-06-09 |
Country Status (1)
Country | Link |
---|---|
LU (1) | LU72684A1 (instruction) |
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1975
- 1975-06-09 LU LU72684A patent/LU72684A1/xx unknown