Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
  • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Read Only Memory (AREA)
• Non-Volatile Memory (AREA)
• Semiconductor Memories (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=5856632

Family Applications (1)

Country Status (6)

• 1973
  • 1973-09-11 IT IT28764/73A patent/IT993186B/it active
  • 1973-09-17 LU LU68431A patent/LU68431A1/xx unknown
  • 1973-09-17 FR FR7333238A patent/FR2244231A1/fr active Granted
  • 1973-09-17 NL NL7312782A patent/NL7312782A/xx unknown
  • 1973-09-17 JP JP10485073A patent/JPS4970543A/ja active Pending
  • 1973-09-18 BE BE135758A patent/BE804980A/xx unknown

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