LU51539A1 - - Google Patents

Info

Publication number
LU51539A1
LU51539A1 LU51539A LU51539A LU51539A1 LU 51539 A1 LU51539 A1 LU 51539A1 LU 51539 A LU51539 A LU 51539A LU 51539 A LU51539 A LU 51539A LU 51539 A1 LU51539 A1 LU 51539A1
Authority
LU
Luxembourg
Application number
LU51539A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of LU51539A1 publication Critical patent/LU51539A1/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C1/00Making non-ferrous alloys
    • C22C1/02Making non-ferrous alloys by melting
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C28/00Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/52Alloys
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • C30B9/04Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/12Salt solvents, e.g. flux growth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80Constructional details
    • H10N10/85Thermoelectric active materials
    • H10N10/851Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
LU51539A 1965-07-13 1966-07-12 LU51539A1 (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR24590A FR1458238A (fr) 1965-07-13 1965-07-13 Procédé de préparation d'alliage germanium-silicium

Publications (1)

Publication Number Publication Date
LU51539A1 true LU51539A1 (nl) 1966-09-12

Family

ID=8584464

Family Applications (1)

Application Number Title Priority Date Filing Date
LU51539A LU51539A1 (nl) 1965-07-13 1966-07-12

Country Status (6)

Country Link
BE (1) BE683847A (nl)
CH (1) CH459583A (nl)
ES (1) ES329013A1 (nl)
FR (1) FR1458238A (nl)
GB (1) GB1154579A (nl)
LU (1) LU51539A1 (nl)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0429019A1 (en) * 1989-11-20 1991-05-29 Nkk Corporation Method for producing a high reactive alloy

Also Published As

Publication number Publication date
GB1154579A (en) 1969-06-11
FR1458238A (fr) 1966-03-04
BE683847A (nl) 1966-12-16
ES329013A1 (es) 1968-03-16
CH459583A (fr) 1968-07-15

Similar Documents

Publication Publication Date Title
JPS494242B1 (nl)
JPS5029142B1 (nl)
JPS447616Y1 (nl)
DE2128317B2 (nl)
JPS4119103Y1 (nl)
JPS4516420Y1 (nl)
JPS4512917Y1 (nl)
BE676050A (nl)
BE675945A (nl)
SE322021B (nl)
BE666590A (nl)
BE675076A (nl)
LU51539A1 (nl)
SE318983B (nl)
NL6612266A (nl)
NL6600398A (nl)
BE666978A (nl)
BE686040A (nl)
BE685010A (nl)
BE684058A (nl)
BE676124A (nl)
BE676096A (nl)
BE676057A (nl)
BE676052A (nl)
BE675151A (nl)