LU502605B1 - Optically controlled terahertz modulator with low power consumption and low insertion loss and preparation method thereof - Google Patents
Optically controlled terahertz modulator with low power consumption and low insertion loss and preparation method thereof Download PDFInfo
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- LU502605B1 LU502605B1 LU502605A LU502605A LU502605B1 LU 502605 B1 LU502605 B1 LU 502605B1 LU 502605 A LU502605 A LU 502605A LU 502605 A LU502605 A LU 502605A LU 502605 B1 LU502605 B1 LU 502605B1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/13—Function characteristic involving THZ radiation
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses an optically controlled terahertz modulator with low power consumption and low insertion loss, which includes a quartz substrate, a silicon thin film, a silicon nano-needle array structure and a graphene thin film all arranged in sequence; graphene thin film is multilayer; the invention also provides a preparation method thereof. With quartz as substrate material, it reduces the insertion loss of terahertz wave by the device substrate; the utilization rate of pump light is improved by forming silicon thin film on the surface of quartz substrate and preparing silicon nano-needle array structure; taking the contact part of the silicon nano-needle array structure and graphene thin film as the working source area, under the stimulation of pump light, the effective regulation of terahertz wave is realized.
Description
LU502605
OPTICALLY CONTROLLED TERAHERTZ MODULATOR WITH LOW POWER
CONSUMPTION AND LOW INSERTION LOSS AND PREPARATION METHOD
THEREOF
The invention relates to the technical field of terahertz wave regulation, and in particular to an optically controlled terahertz modulator with low power consumption and low insertion loss and a preparation method thereof.
Terahertz wave is an electromagnetic wave with a frequency of 0.1-10 THz, and it is between millimeter wave and infrared light. Compared with microwave and light wave, terahertz wave has low energy, strong penetrating power and rich spectral information, and 1s widely used in communication, security inspection, nondestructive testing, medical imaging, etc. However, due to lack of suitable terahertz sources and detectors, terahertz band cannot be developed and utilized for a long time.
In recent years, with the emergence of terahertz quantum cascade lasers and terahertz quantum well detectors, terahertz sources and detection technologies have been promoted and developed. However, compared with the development of terahertz source and detection technology, optically controlled terahertz modulator technology is still lagging behind, and that limits the development and application of terahertz technology. As core device of terahertz technology, optically controlled terahertz modulator is self-evident.
The existing terahertz wave modulators are generally divided into electronically controlled modulators and optically controlled modulators. The electronically controlled modulator uses resonance enhancement characteristics to improve the transmittance, and the modulation depth is high but the modulation bandwidth is narrow. Optically controlled modulator uses photo-generated carriers to increase absorption rate, and it has high modulation bandwidth, but it requires high pump power, so that increases cost and structural complexity. At the same time, due to the limitation of materials, the insertion loss of the modulator is large.
Therefore, aiming at the problems of high operating power, high insertion loss and complex structure of the existing optically controlled terahertz modulator, it is particularly urgent to develop a low-cost optically controlled terahertz modulator with low operating power
LU502605 consumption, low insertion loss and simple structure.
In view of the above problems, the present invention provides an optically controlled terahertz modulator with low power consumption and insertion loss, and it uses quartz as the base material to reduce the insertion loss of terahertz waves by the device base. The silicon thin film is formed on the surface of quartz substrate and the silicon nano-needle array structure is prepared to improve the utilization rate of pump light. Taking the contact part of the silicon nano-needle array structure and graphene thin film as the working source area, under the stimulation of pump light, the effective regulation of terahertz wave 1s realized.
In order to achieve the above objective, the invention adopts the following technical scheme: an optically controlled terahertz modulator with low power consumption and low insertion loss includes a quartz substrate, a silicon thin film, a silicon nano-needle array structure and a graphene thin film all arranged in sequence; graphene thin film is multilayer.
The invention take quartz as a substrate, and that reduces the insertion loss of terahertz wave; silicon nano-needle array structure is formed on the surface of silicon thin film, and that has great absorption capacity for pump light and reduces the reflectivity of pump light, thus improving the utilization rate of pump light and reducing power consumption. When the pump light is stimulated and irradiated in the silicon nano-needle array structure, the light trapping effect and the oscillation feedback effect are generated, and a large number of photo-generated carriers are generated in the silicon nano-needle array structure. Due to the weak absorption of visible light by graphene thin film, the number of photo-generated carriers is much smaller than that generated by silicon nano-needle array structure. Therefore, a large number of photo-generated carriers in the silicon nano-needle array structure quickly migrate to the graphene thin film and reach an equilibrium state, and a carrier depletion layer is formed at the silicon nano-needle array structure. Graphene thin film is affected by the injection of a large number of diffused carriers, the carrier concentration increases rapidly, and that will lead to a significant decrease in terahertz transmittance; and then the deep modulation of terahertz transmission intensity is realized under low power pump light.
Optionally, thickness of the quartz substrate is 300-500 um; the silicon thin film is an
N-type silicon thin film with a thickness of 80-200 um and a resistivity of 1000-5000 Q-m; diameter of the nano needles of the silicon nano-needle array structure is 100-300 nm, and the 1206800 length is 3-8 um; the graphene thin film is P-type graphene with 2-4 layers.
The heterojunction structure formed by N-type silicon thin film and P-type graphene promotes the rapid diffusion of photo-generated carriers in silicon to graphene layer. The generation and diffusion of photo-generated carriers improve the conductivity of graphene and increase the absorption of terahertz waves. By changing the power of the pump light to adjust the concentration of photo-generated carriers, the effective regulation of terahertz wave is realized.
A preparation method of an optically controlled terahertz modulator with low power consumption and low insertion loss, which includes the following steps: (1) using plasma enhanced chemical vapor deposition (PECVD) to grow undoped silicon thin film on quartz substrate, and doping to form silicon thin film; (2) using metal-assisted chemical etching method to etch the silicon nano-needle array structure on the silicon thin film; and (3) using wet transfer method to transfer graphene thin film to the surface of silicon nano-needle array structure.
Optionally, the specific steps of the step (1) are as follows: placing the quartz substrate in a
PECVD chamber, and filling the mixed gas of hydrogen and silane to grow an undoped silicon thin film; using muffle furnace to diffuse phosphorus pentoxide on the surface of silicon thin film to form silicon thin film.
Optionally, proportion of hydrogen in the mixed gas of hydrogen and silane in step (1) is 96-99%; the diffusion temperature in muffle furnace is 300-500°C and the diffusion time is 5-10 min.
Optionally, the specific steps of step (2) are as follows: 1) cleaning the surface of the silicon thin film; 2) using the mixed solution of AgNO; and HF to deposit a layer of silver nanoparticles on the surface of silicon thin film; 3) etching the surface of the silicon thin film with etching solution; and 4) cleaning the surface of the silicon thin film to obtain a silicon nano-needle array structure.
Optionally, in step 1), firstly cleaning the oxide layer on the surface of the silicon thin film by HF, and then using acetone, alcohol and deionized water for ultrasonic cleaning and drying for later use; in step 4), using aqua regia for cleaning. 1206800
Optionally, in step 2), the concentration of AgNO; is 0.02-0.08 mol/L, the volume concentration of HF is 3-7%, and the deposition time is 10-20 s.
Ag ion has good etching effect, and other metal ions either can't be used for etching, or the diameter of them is too large.
Optionally, the etching solution in step 3) is a mixed solution of HF and H:0», wherein the volume concentration of HF is 3-7% and the volume concentration of H,O, is 2-5%; the etching temperature is 50-70°C and the etching time is 20-30 min.
According to the above technical scheme, compared with the prior art, the invention discloses an optically controlled terahertz modulator with low power consumption and low insertion loss, using quartz as a substrate material to reduce the insertion loss of terahertz waves by device substrate; a silicon thin film is formed on the surface of quartz substrate and a silicon nano-needle array structure is prepared; by using the light trapping effect and multiple oscillation feedback stimulation effect of the pump light in the silicon micro-nano structure, the photoelectric conversion efficiency of the modulation device stimulated by the pump light is effectively improved, and the regulation of terahertz wave is realized under extremely low pump light power.
In order to explain the embodiment of the invention or the technical scheme in the prior art more clearly, the drawings used in the embodiment will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the invention. For ordinary technicians in the field, other drawings can be obtained according to these drawings without making creative efforts.
FIG. 1 is a schematic structural diagram of an optically controlled terahertz modulator according to Embodiment 1 of the present invention; where 1 is quartz substrate, 2 is silicon thin film, 3 is silicon nano-needle array structure, and 4 is graphene thin film.
FIG. 2 is a scanning electron microscope cross-sectional view of the silicon nano-needle array structure in Embodiment 1 of the present invention.
FIG. 3 is a schematic diagram of the optical control terahertz modulator test in Embodiment
1 of the present invention.
LU502605
FIG. 4 shows the modulation depth of the terahertz wave frequency of 1.0 Thz when the 808 nm laser 1s stimulated by different pump light power for the optically controlled terahertz modulator in Embodiment 1 of the present invention.
FIG. 5 shows the modulation depth of the optically controlled terahertz modulator with different terahertz wave frequencies under the stimulation of 808 nm laser with 50 mW/mm? pump power in Embodiment 1 of the present invention.
FIG. 6 shows the modulation depths of the optically controlled terahertz modulator with different terahertz wave frequencies under the stimulation of 808 nm laser with 50 mW/mm? pump power in Comparative Embodiment 1 of the present invention.
FIG. 7 shows the modulation depth of the terahertz wave frequency of 1.0 Thz when the 808 nm laser is stimulated by different pump light power for the optically controlled terahertz modulator in Comparative Embodiment 2 of the present invention.
FIG. 8 shows the insertion loss of the optically controlled terahertz modulator at different terahertz wave frequencies in Embodiment 1 and Comparative Embodiment 3 of the present invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, but not all of them. Based on the embodiment of the present invention, all other embodiments obtained by ordinary technicians in the field without making creative efforts are within the protection scope of the present invention.
Embodiment 1
As shown in FIG. 1, an optically controlled terahertz modulator with low power consumption and low insertion loss comprises a quartz substrate 1, a silicon thin film 2, a silicon nano-needle array structure 3 and a graphene thin film 4 all arranged in sequence; the graphene thin film has two layers.
The thickness of quartz substrate is 400 um; the silicon thin film is N-type silicon thin film with a thickness of 100 um and a resistivity of 3000 Q-cm; the diameter of the nano needles of the silicon nano-needle array structure is 100-300 nm, and the length is 3-8 um; graphene thin film is P-type graphene.
LU502605
The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss, which includes the following steps: (1) placing 400 um thick quartz substrate in PECVD chamber, filling mixed gas of hydrogen and silane (the volume ratio of the mixed gas is 96%), and the undoped silicon thin film being grown on the surface of quartz substrate; (2) diffusing phosphorus pentoxide by muffle furnace, carrying out N-type doping on the surface of undoped silicon thin film, preparing silicon thin film with resistivity of 3000 Q-cm; the diffusion temperature being 400°C and the diffusion time being 8 min; (3) first cleaning the oxide layer on the surface of the silicon thin film by HF, ultrasonic cleaning with acetone, alcohol and deionized water for 5 min, and drying for later use; (4) preparing a mixed solution containing 0.05 mol/L. AgNOs and 5% HF, dropping it onto the surface of the cleaned silicon thin film for 15 s with a dropper, and depositing a layer of silver nanoparticles on the surface of the silicon thin film; (5) preparing etching solution containing 5% HF and 2% HzO>; putting the quartz substrate-silicon thin film deposited with silver nanoparticles in a constant-temperature oven at a constant temperature of 60°C, and dropping the etching solution onto the surface of the silicon thin film deposited with silver nanoparticles with a dropper for 25 min to complete the acid etching; (6) washing the surface of quartz-silicon thin film with aqua regia for 60 min, and obtaining the silicon nano-needle array structure on the surface of silicon thin film (FIG. 2); and (7) transferring P-type graphene to the surface of silicon nano-needle array structure by wet transfer method, and transferring two layers in total; PN heterojunction structure being formed between P-type graphene and silicon nano-needle array structure.
Wet transfer method: firstly uniformly spin-coating 4% PMMA solution (the solvent is anisole) on the surface of copper foil with P-type graphene, and the spin-coating speed being 3000 r/min and the spin-coating time being 30 s; placing spin-coated graphene on a hot plate at 100°C and baked for 5 min, so that PMMA is cured and tightly bonded with the graphene thin film, putting it into FeCl; corrosion solution (concentration: 1 mol/L) for 12 h, transferring the corroded PMMA/ graphene to deionized water and rinsing for 5 times to remove the impurities adsorbed on the surface of graphene, transferring rinsed PMMA/ graphene to the silicon nano-needle array structure and drying naturally, baking on a hot plate at 150°C for 10 min after the drying in the air, further removing the water at the interface between graphene and silicon 1206800 nanoneedle array structure and making them closely contact, washing with acetone and alcohol to remove PMMA, and using nitrogen to blow dry, that is, transferring P-type graphene to the surface of silicon nano-needle array.
Placing the prepared optically controlled terahertz modulator in a terahertz time domain spectroscopy system (FIG. 3), 808 nm continuous wave pump laser being irradiated on the surface of graphene thin film, then terahertz pulse with frequency of 1.0 THz being vertically projected on the surface of graphene thin film, and detecting the waveform and intensity of transmitted terahertz pulse on the side of quartz substrate. As shown in FIG. 4, with the increase of pump power, the modulation depth of optically controlled terahertz modulator increases, and the modulation depth reaches more than 85% at 50 mW/mm? pump power.
Embodiment 2
The optically controlled terahertz modulator prepared in Embodiment 1 is placed in a terahertz time domain spectroscopy system, and 808 nm, 50 mW/mm’? CW pump laser is irradiated on the surface of graphene thin film. Then terahertz pulses with different frequencies are vertically projected on the surface of graphene thin film, and the waveform and intensity of transmitted terahertz pulses are detected on the side of quartz substrate. As shown in FIG. 5, the modulation depth reaches more than 80% in the terahertz frequency band of 0.1-2.0 THz.
Comparative Embodiment 1
In Embodiment 1, the surface of the silicon thin film is not N-doped. (1) placing 400 um thick quartz substrate in PECVD chamber, filling mixed gas of hydrogen and silane (the volume ratio of the mixed gas is 96%), and the undoped silicon thin film being grown on the surface of quartz substrate; (2) first cleaning the oxide layer on the surface of the silicon thin film by HF, ultrasonic cleaning with acetone, alcohol and deionized water for 5 min, and drying for later use; (3) preparing a mixed solution containing 0.05 mol/L. AgNOs and 5% HF, dropping it onto the surface of the cleaned silicon thin film for 15 s with a dropper, and depositing a layer of silver nanoparticles on the surface of the silicon thin film; (4) preparing etching solution containing 5% HF and 2% HzO>; putting the quartz substrate-silicon thin film deposited with silver nanoparticles in a constant-temperature oven at a constant temperature of 60°C, and dropping the etching solution onto the surface of the silicon thin film deposited with silver nanoparticles with a dropper for 25 min to complete the acid 1206800 etching; (5) washing the surface of quartz-silicon thin film with aqua regia for 60 min, and obtaining the silicon nano-needle array structure on the surface of silicon thin film; and (6) transferring P-type graphene to the surface of silicon nano-needle array structure by wet transfer method, and transferring two layers in total.
The optically controlled terahertz modulator prepared above in a terahertz time domain spectroscopy system, and 808 nm, 50 mW/mm? CW pump laser is irradiated on the surface of graphene thin film. Then terahertz pulses with different frequencies are vertically projected on the surface of graphene thin film, and the waveform and intensity of transmitted terahertz pulses are detected on the side of quartz substrate. As shown in FIG. 6, the modulation depth reaches nearly 60% in the terahertz frequency band of 0.1-2.0 THz. The modulation depth of
Comparative Embodiment 1 is 20% lower than that of Embodiment 2. As the silicon thin film of
Comparative Embodiment 1 is not doped with N-type, it cannot form a PN heterojunction structure with P-type graphene, and the photo-generated carriers generated under the stimulation of pump light are less than those of Embodiment 2, so the modulation depth is lower than that of
Embodiment 2.
Comparative Embodiment 2
In Embodiment 1, the silicon nano-needle array structure is not etched on the surface of the silicon thin film, and P-type graphene is directly transferred to the surface of the silicon thin film. (1) placing 400 um thick quartz substrate in PECVD chamber, filling mixed gas of hydrogen and silane (the volume ratio of the mixed gas is 96%), and the undoped silicon thin film being grown on the surface of quartz substrate; (2) diffusing phosphorus pentoxide by muffle furnace, carrying out N-type doping on the surface of undoped silicon thin film, preparing silicon thin film with resistivity of 3000 Q-cm; the diffusion temperature being 400°C and the diffusion time being 8 min; (3) first cleaning the oxide layer on the surface of the silicon thin film by HF, ultrasonic cleaning with acetone, alcohol and deionized water for 5 min, and drying for later use; (4) transferring P-type graphene to the surface of silicon nano-needle array structure by wet transfer method, and transferring two layers in total; PN heterojunction structure being formed between P-type graphene and silicon nano-needle array structure. 10206008
The optically controlled terahertz modulator prepared above in a terahertz time domain spectroscopy system, and 808 nm pump laser is irradiated on the surface of graphene thin film.
Then terahertz pulse with a frequency of 1.0 THz is vertically projected on the surface of graphene thin film, and the waveform and intensity of transmitted terahertz pulses are detected on the side of quartz substrate. As shown in FIG. 7, with the increase of pump power, the modulation depth of optically controlled terahertz modulator increases, and the modulation depth is close to 75% at 50 mW/mm° pump power. The modulation depth of Comparative Embodiment 2 is 10% lower than that of Embodiment 1. Because the silicon nano-needle array structure of
Comparative Embodiment 2 1s not etched and the pump light reflected only once on the silicon thin film, the pump light 1s not fully utilized. The photo-generated carriers generated under the stimulation of the pump light are less than those of Embodiment 1, so the modulation depth is lower than that of Embodiment 1.
Comparative Embodiment 3
The silicon nano-needle array structure is etched directly on the 500 um thick N-type silicon substrate, and the P-type graphene is transferred, according to the method of Embodiment 1. (1) taking 500 um thick undoped silicon substrate; (2) diffusing phosphorus pentoxide by muffle furnace, carrying out N-type doping on the surface of undoped silicon substrate, preparing silicon substrate with resistivity of 3000 Q-cm; the diffusion temperature being 400°C and the diffusion time being 8 min; (3) first cleaning the oxide layer on the surface of the silicon substrate by HF, ultrasonic cleaning with acetone, alcohol and deionized water for 5 min, and drying for later use; (4) preparing a mixed solution containing 0.05 mol/L AgNO; and 5% HF, dropping it onto the surface of the cleaned silicon substrate for 15 s with a dropper, and depositing a layer of silver nanoparticles on the surface of the silicon substrate; (5) preparing etching solution containing 5% HF and 2% HO»; putting the silicon substrate deposited with silver nanoparticles in a constant-temperature oven at a constant temperature of 60°C, and dropping the etching solution onto the surface of the silicon substrate deposited with silver nanoparticles with a dropper for 25 min to complete the acid etching; (6) washing the surface of silicon substrate with aqua regia for 60 min, and obtaining the silicon nano-needle array structure on the surface of silicon substrate; and
LU502605 (7) transferring P-type graphene to the surface of silicon nano-needle array structure by wet transfer method, and transferring two layers in total; PN heterojunction structure being formed between P-type graphene and silicon nano-needle array structure.
The prepared optically controlled terahertz modulator is placed in a terahertz time domain spectroscopy system, then terahertz pulses with different frequencies are vertically projected on the surface of graphene thin film; the waveform and intensity of transmitted terahertz pulses are detected on one side of the silicon substrate, and the insertion loss of the modulator is obtained by comparing with the waveform and intensity of terahertz source pulses. At the same time, the optically controlled terahertz modulator prepared in Embodiment 1 is tested in the same way. As shown in FIG. 8, the insertion loss of Embodiment 1 is about 1.8 dB, and that of Comparative
Embodiment 3 is about 4.2 dB. Since the reflection and absorption of terahertz wave by silicon is higher than that of quartz, the insertion loss of Comparative Embodiment 3 is higher than that of
Embodiment 1.
In this specification, each embodiment is described in a progressive way, and the differences between each embodiment and other embodiments are highlighted, so the same and similar parts of each embodiment can be referred to each other. As for the device disclosed in the embodiment, it corresponds to the method disclosed in the embodiment, so the description is relatively simple, and refer to the description in the method section for relevant points.
The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be obvious to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. An optically controlled terahertz modulator with low power consumption and low insertion loss, characterized by comprising a quartz substrate, a silicon thin film, a silicon nano-needle array structure and a graphene thin film all arranged in sequence; the graphene thin film is multilayer.
2. The optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 1, characterized in that, thickness of the quartz substrate is 300-500 um; the silicon thin film is an N-type silicon thin film with a thickness of 80-200 um and a resistivity of 1000-5000 Q-m; diameter of the nano needles of the silicon nano-needle array structure is 100-300 nm, and the length is 3-8 um; the graphene thin film is P-type graphene with 2-4 layers.
3. A preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claims 1 or 2, which is characterized by comprising the following steps: (1) using plasma enhanced chemical vapor deposition to grow undoped silicon thin film on quartz substrate, and doping to form silicon thin film; (2) using metal-assisted chemical etching method to etch the silicon nano-needle array structure on the silicon thin film; and (3) using wet transfer method to transfer graphene thin film to the surface of silicon nano-needle array structure.
4. The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 3, characterized in that, the specific steps of the step (1) are as follows: placing the quartz substrate in a PECVD chamber, and filling the mixed gas of hydrogen and silane to grow an undoped silicon thin film; using muffle furnace to diffuse phosphorus pentoxide on the surface of silicon thin film to form silicon thin film.
5. The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 4, characterized in that, proportion of hydrogen in the mixed gas of hydrogen and silane in step (1) is 96-99%; the diffusion temperature in muffle furnace is 300-500°C and the diffusion time is 5-10 min.
6. The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 3, characterized in that, the specific steps of step (2) are as follows: LU502605 1) cleaning the surface of the silicon thin film; 2) using the mixed solution of AgNO3 and HF to deposit a layer of silver nanoparticles on the surface of silicon thin film: 3) etching the surface of the silicon thin film with etching solution; and 4) cleaning the surface of the silicon thin film to obtain a silicon nano-needle array Structure.
7. The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 6, characterized in that, in step 1), firstly cleaning the oxide layer on the surface of the silicon thin film by HF, and then using acetone, alcohol and deionized water for ultrasonic cleaning and drying for later use; in step 4), using aqua regia for cleaning.
8. The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 6, characterized in that, in step 2), the concentration of AgNO; is 0.02-0.08 mol/L, the volume concentration of HF is 3-7%, and the deposition time 1s 10-20 s.
9. The preparation method of the optically controlled terahertz modulator with low power consumption and low insertion loss according to claim 6, characterized in that, the etching solution in step 3) is a mixed solution of HF and H:O>, wherein the volume concentration of HF is 3-7% and the volume concentration of H:0> is 2-5%; the etching temperature is 50-70°C and the etching time 1s 20-30 min.
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| LU502605A LU502605B1 (en) | 2022-07-29 | 2022-07-29 | Optically controlled terahertz modulator with low power consumption and low insertion loss and preparation method thereof |
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