LU502469B1 - Dysprosium ion-activated pyrosilicate mixed crystal and solid state laser in visible region thereof - Google Patents
Dysprosium ion-activated pyrosilicate mixed crystal and solid state laser in visible region thereof Download PDFInfo
- Publication number
- LU502469B1 LU502469B1 LU502469A LU502469A LU502469B1 LU 502469 B1 LU502469 B1 LU 502469B1 LU 502469 A LU502469 A LU 502469A LU 502469 A LU502469 A LU 502469A LU 502469 B1 LU502469 B1 LU 502469B1
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- Prior art keywords
- laser
- solid state
- crystal
- transmittance
- semiconductor laser
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- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 239000007787 solid Substances 0.000 title claims abstract description 29
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 238000002834 transmittance Methods 0.000 claims description 29
- 238000005086 pumping Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 abstract description 2
- 238000007747 plating Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1606—Solid materials characterised by an active (lasing) ion rare earth dysprosium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1655—Solid materials characterised by a crystal matrix silicate
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The present invention discloses a dysprosium ion-activated pyrosilicate mixed crystal and a solid state laser in visible region, and relates to the field of solid state laser materials and devices. The molecular formula of the crystal is (Lu(1-x-y)RexDyy)2Si2O7, where 0<x≤0.1, 0<y<0.8, and Re is a certain element of element Y and element Gd and a combination of several elements. The crystal is used as a gain medium and is pumped using a semiconductor laser with a wavelength near 447 nm, so as to output high-performance solid state laser lights in visible regions of 570-595 nm and 480-500 nm.
Description
BL-5528
DYSPROSIUM ION-ACTIVATED PYROSILICATE MIXED CRYSTALAND 502469
SOLID STATE LASER IN VISIBLE REGION THEREOF
[01] The present invention relates to the field of solid laser materials and devices.
[02] Solid state lasers in a visible region have important application value in display, military, biomedicine, underwater communications, and the like. Ion Dy*” has a rich energy level structure. The use of “Fon to “His and*Fop to °Hi3p transitions can emit blue laser light near a wavelength of 490 nm and yellow laser light near a wavelength of 580 nm. At present, there are still a few of kinds of crystals that realize running of Dy** ion-activated solid state lasers in a visible region, and only Dy*":ZnWOs,
Dy**:KGd(WO4), Dy**:KY(WO4),, Dy**:YAG and Dy*":Tb**: LiLuF4 are publically reported. A pyrosilicate mixed crystal belongs to a monoclinic system and has a low-symmetric crystal structure, which is conductive to improving the probability of radiation transition between related energy levels of ion Dy**. The mixed crystal helps to broaden an absorption peak and improve the absorption efficiency of the crystal for pumped light, thereby improving the running efficiency of lasers in a visible region. In addition, this kind of crystal has stable physical and chemical properties, high hardness and good thermal properties, and can withstand high-power laser pumping, thereby outputting high-power laser light.
[03] The present invention aims to provide a dysprosium ion-activated pyrosilicate mixed laser crystal. This kind of crystal is used as a gain medium, thus outputting blue solid state laser light in a region of 480-500 nm and yellow solid state laser light in a region of 570-595 nm.
[04] The present invention includes the following technical solution:
[05] 1. A dysprosium ion-activated pyrosilicate mixed laser crystal characterized in that the molecular formula of the crystal is (Lug-xy)RexDyy)2Si207, where 0<x<0.1, 0<y<0.8, and Re is a certain element of element Y and element Gd and a combination of several elements.
[06] 2. A solid state laser in a region of 570-595 nm, characterized by being composed of a semiconductor laser pumping system, a laser resonant cavity and a gain medium, wherein the crystal according to 1 is used as a gain medium of the laser; the semiconductor laser pumping system includes a semiconductor laser with a wavelength near 447 nm, and an optical coupler placed between the semiconductor laser and the resonant cavity; the laser resonant cavity is composed of an input mirror and an output mirror; the input mirror is designed to have a transmittance of 7>80% at a wavelength near 447 nm and has a transmittance of 7<0.5% at a band of 570-595 nm; and the output mirror is designed to have a transmittance of 0.5%<7<10% at a band of 570-595 nm.
[07] 3. The solid state laser according to 2, characterized in that the input mirror and the output mirror are respectively directly plated on one or two opposite end surfaces of 1
BL-5528 the gain medium. LU502469
[08] 4. A solid state laser in a region of 480-500 nm, characterized by being composed of a semiconductor laser pumping system, a laser resonant cavity and a gain medium, wherein the crystal according to 1 is used as a gain medium of the laser; the semiconductor laser pumping system includes a semiconductor laser with a wavelength near 447 nm, and an optical coupler placed between the semiconductor laser and the resonant cavity; the laser resonant cavity is composed of an input mirror and an output mirror; the input mirror is designed to have a transmittance of 7>80% at a wavelength near 447 nm and has a transmittance of 7<0.5% at a band of 480-500 nm; and the output mirror is designed to have a transmittance of 0.5%<7<10% at a band of 480-500 nm.
[09] 5. The solid state laser according to 4, characterized in that the input mirror and the output mirror are respectively directly plated on one or two opposite end surfaces of the gain medium.
[10] Beneficial effects of implementation of the technical solution of the present invention are as follows: The (Lua-x-yRexDyy)2S1207 crystal is used as a gain medium, so that solid state laser lights in regions of 570-595 nm and 480-500 nm with high output power and high efficiency can be obtained.
[11] FIG 1 is an X-Ray Diffraction (XRD) spectrum of a laser crystal prepared in
Embodiment 1.
[12] FIG 2 is an emission spectrogram of a sample prepared in Embodiment 1.
[13] Example 1: An end of a 447nm semiconductor laser pumps a (Luo57Y04Dyo.03)2Si207 crystal to output 573nm solid laser light.
[14] The (Luos7Y04Dyo.03)2S1207 laser crystal is grown by using a pulling method.
The crystal belongs to monoclinic system having three optical principal axes: X, Y and Z.
After orientation with a polarizing microscope, an XY plane is used as a light pass surface, and the crystal sample with a thickness of 15 mm (an end area is generally square millimeter to square centimeter) is cut; and after its end surface is polished, the crystal sample is placed into a laser cavity. The transmittance of a laser cavity input mirror at a wavelength of 447 nm is 7=90%, and the transmittance at a wavelength of 573 nm is 7=0.2%; and the transmittance of a laser cavity output mirror at a wavelength of 573 nm is 7=2.0%. End pumping of the 447nm semiconductor laser is used to output continuous solid state laser light with a wavelength of 573nm. The same purpose can also be achieved by directly plating the laser cavity input mirror and the laser cavity output mirror on two end surfaces of the laser crystal respectively.
[15] Example 2: An end of a 447nm semiconductor laser pumps a (Luo57Yo4Dy0.03)2S1207 crystal to output 495nm solid state laser light.
[16] By use of the laser crystal sample in Example 1, the transmittance of a laser cavity input mirror at a wavelength of 447 nm is 7=85%, and the transmittance at a wavelength of 495 nm is 7=0.3%; and the transmittance of a laser cavity output mirror at a wavelength of 495 nm is 7=1.5%. End pumping of the 447nm semiconductor laser 2
BL-5528 is used to output continuous solid state laser light with a wavevlength of 495nm. The LU502469 same purpose can also be achieved by directly plating the laser cavity input mirror and the laser cavity output mirror on two end surfaces of the laser crystal respectively.
[17] Example 3: An end of a 447nm semiconductor laser pumps a (Luo66Yo3Dy0.04)2S1207 crystal to output 482nm solid state laser light.
[18] The (LuoesYo3Dyo04)2S1207 laser crystal is grown by using a pulling method.
The crystal belongs to monoclinic system having three optical principal axes: X, Y and Z.
After orientation with a polarizing microscope, an XY plane is used as a light pass surface, and the crystal sample with a thickness of 12 mm (an end area is generally square millimeter to square centimeter) is cut; and after its end surface is polished, the crystal sample is placed into a laser cavity. The transmittance of a laser cavity input mirror at a wavelength of 447 nm is 7=80%, and the transmittance at a wavelength of 482 nm is 7=0.2%; and the transmittance of a laser cavity output mirror at a wavelength of 482 nm is 1.0%, and the transmittance at a band o 485-500 nm is 7>5%. End pumping of the 447nm semiconductor laser is used to output continuous solid state laser light with a wavelength of 482nm. The same purpose can also be achieved by directly plating the laser cavity input mirror and the laser cavity output mirror on two end surfaces of the laser crystal respectively.
[19] Example 4 An end of a 447nm semiconductor laser pumps a (Luo.75Gdo 2Dyo.05)2S1207 crystal to output 589nm solid state laser light.
[20] The (Luo.75Gdo2Dyo.05)2S1207 laser crystal is grown by using a pulling method.
The crystal belongs to monoclinic system having three optical principal axes: X, Y and Z.
After orientation with a polarizing microscope, an XY plane is used as a light pass surface, and the crystal sample with a thickness of 10 mm (an end area is generally square millimeter to square centimeter) is cut; and after its end surface is polished, the crystal sample is placed into a laser cavity. The transmittance of a laser cavity input mirror at a wavelength of 447 nm is 7=90%, and the transmittance at a wavelength of 589 nm is 7=0.2%; and the transmittance of a laser cavity output mirror at a wavelength of 589 nm is 7=1.5%, and the transmittance at a band of 570-585 nm is 7>5%. End pumping of the 447nm semiconductor laser is used to output continuous solid state laser light with a wavelength of 589nm. The same purpose can also be achieved by directly plating the laser cavity input mirror and the laser cavity output mirror on two end surfaces of the laser crystal respectively.
[21] Example 5: An end of a 447nm semiconductor laser pumps a
Dy**:(Luo33Gdo 6Dy0.07)2S1207 crystal to output 570nm solid state laser light.
[22] The Dy**:(Luo33GdosDyo.07)2Si207 laser crystal is grown by using a molten-salt growth method. The crystal belongs to monoclinic system having three optical principal axes: X, Y and Z. After orientation with a polarizing microscope, an XZ plane is used as a light pass surface, and the crystal sample with a thickness of 8 mm (an end area is generally square millimeter to square centimeter) is cut, and after its end surface is polished, the crystal sample is placed into a laser cavity. The transmittance of a laser cavity input mirror at a wavelength of 447 nm is 7=95%, and the transmittance at a wavelength of 570 nm is 7=0.1%; and the transmittance of a laser cavity output mirror at a wavelength of 570 nm is 7=2.5%. End pumping of the 447nm semiconductor laser 3
BL-5528 ; ; ; ; ; LU502469 is used to output continuous solid state laser light with a wavelength of 570nm.
The same purpose can also be achieved by directly plating the laser cavity input mirror and the laser cavity output mirror on two end surfaces of the laser crystal respectively. 4
Claims (4)
1. A dysprosium ion-activated pyrosilicate mixed crystal and a solid state laser in a visible region thereof, characterized in that the molecular formula of the crystal 1s (Lu(-xy)RexDyy)2Si2O7, where O<x 50.1, 0<y<0.8, and Re is a certain element of element Y and element Gd and a combination of several elements.
2. À solid state laser in a region of 570-595 nm, characterized by being composed of a semiconductor laser pumping system, a laser resonant cavity and a gain medium, wherein the crystal according to claim 1 is used as a gain medium of the laser; the semiconductor laser pumping system comprises a semiconductor laser with a wavelength near 447 nm, and an optical coupler placed between the semiconductor laser and the resonant cavity; the laser resonant cavity is composed of an input mirror and an output mirror, the input mirror is designed to have a transmittance of 7>80% at a wavelength near 447 nm and has a transmittance of 7<0.5% at a band of 570-595 nm; and the output mirror is designed to have a transmittance of 0.5%<7<10% at a band of 570-595 nm.
3. À solid state laser in a region of 480-500 nm, characterized by being composed of a semiconductor laser pumping system, a laser resonant cavity and a gain medium, wherein the crystal according to claim 1 is used as a gain medium of the laser; the semiconductor laser pumping system comprises a semiconductor laser with a wavelength near 447 nm, and an optical coupler placed between the semiconductor laser and the resonant cavity; the laser resonant cavity is composed of an input mirror and an output mirror, the input mirror is designed to have a transmittance of 7>80% at a wavelength near 447 nm and has a transmittance of 7<0.5% at a band of 480-500 nm; and the output mirror is designed to have a transmittance of 0.5%<7<10% at a band of 480-500 nm.
4. The solid state laser according to claim 2 and 3, characterized in that the input mirror and the output mirror are respectively directly plated on one or two opposite end surfaces of the gain medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU502469A LU502469B1 (en) | 2022-07-06 | 2022-07-06 | Dysprosium ion-activated pyrosilicate mixed crystal and solid state laser in visible region thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| LU502469A LU502469B1 (en) | 2022-07-06 | 2022-07-06 | Dysprosium ion-activated pyrosilicate mixed crystal and solid state laser in visible region thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| LU502469B1 true LU502469B1 (en) | 2024-01-09 |
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ID=89473745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| LU502469A LU502469B1 (en) | 2022-07-06 | 2022-07-06 | Dysprosium ion-activated pyrosilicate mixed crystal and solid state laser in visible region thereof |
Country Status (1)
| Country | Link |
|---|---|
| LU (1) | LU502469B1 (en) |
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2022
- 2022-07-06 LU LU502469A patent/LU502469B1/en active
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