KR980006674A - High power laser diode manufacturing method - Google Patents

High power laser diode manufacturing method Download PDF

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Publication number
KR980006674A
KR980006674A KR1019960026369A KR19960026369A KR980006674A KR 980006674 A KR980006674 A KR 980006674A KR 1019960026369 A KR1019960026369 A KR 1019960026369A KR 19960026369 A KR19960026369 A KR 19960026369A KR 980006674 A KR980006674 A KR 980006674A
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KR
South Korea
Prior art keywords
layer
forming
etching solution
selective etching
laser diode
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Application number
KR1019960026369A
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Korean (ko)
Inventor
이상용
김돈수
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960026369A priority Critical patent/KR980006674A/en
Publication of KR980006674A publication Critical patent/KR980006674A/en

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  • Semiconductor Lasers (AREA)

Abstract

본 발명은 반도체 패키지 공정에서 칩을 몰딩하는데 사용되는 몰드 다이를 개시한다. 이 레이저 다이오드의 제조방법은 활성층 위에 두께의 제1클래드층을 형성하는 단계;제1클래드층과 조성비가 다른 식각저지층을 형성하는 단계;식각 저지층 위에 제2클래드층을 형성하는 단계;클래드층 위에 소정 패턴을 콘택층과 실리콘산 화막층을 순차적으로 형성하는 단계; 제2클래드 층을 비선택 식각용액으로 소정 깊이까지 식각하는 단계; 전 단계에서 식각되지 않고 제2 클래드층을 선택식각용액으로 식각하는 단계를 포함한다.The present invention discloses a mold die for use in molding a chip in a semiconductor package process. A method for fabricating a laser diode includes the steps of forming a first cladding layer having a thickness on an active layer, forming an etch stop layer having a composition ratio different from that of the first cladding layer, forming a second cladding layer on the etch stop layer, Sequentially forming a contact layer and a silicon oxide layer in a predetermined pattern; Etching the second clad layer to a predetermined depth using a non-selective etching solution; And etching the second cladding layer with the selective etching solution without being etched in the previous step.

Description

고출력 레이저 다이오드 제조방법High power laser diode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도와 제3도는 본 발명의 실시예에 따른 고출력 레이저 다이오드FIGS. 2 and 3 illustrate a high power laser diode according to an embodiment of the present invention.

Claims (5)

황성층 위에 소정 두께의 제1클래드층을 형성하는 단계;상기 제1클래드층과 조성비가 다른 식각저지층을 형성하는 단계;상기 식각 저지층위에 제2클래드층을 형성하는 단계;클래드층 위에 소정 패턴의 콘택층과 실리콘산화막층을 순차적으로 형성하는 단계;상기 제2클래드 층을 비선택 식각용액으로 소정 깊이까지 식각하는 단계;상기 단계에서 식각되지 않고 남은 제2클래드층을 선택식각용액으로 식각하는 단계를 포함하는 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.Forming a first clad layer having a predetermined thickness on the buffer layer, forming an etch stop layer having a composition ratio different from that of the first clad layer, forming a second clad layer on the etch stop layer, Etching the second clad layer to a predetermined depth using a non-selective etching solution, etching the second clad layer that has not been etched in the step of removing the second clad layer using a selective etching solution, Wherein the step of forming the high-power laser diode comprises the steps of: 제1항에 있어서, 상기 식각저지층은 A10.8Ga0.2As인 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.The method of claim 1, wherein the etch stop layer is A 10.8 Ga 0.2 As. 제1항 또는 제2항에 있어서, 상기 비선택 식각용액은 NH4OH;H2O2;H2O=1:1:6인 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.The method of claim 1 or 2, wherein the non-selective etching solution is NH 4 OH, H 2 O 2, H 2 O = 1: 1: 6. 제1항 또는 제2항에 있어서, 상히 선택식각용액은 타르타닉산:H2O2:H2O=5g:50cc:100cc인 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.The method of manufacturing a high power laser diode according to claim 1 or 2, wherein the highly selective etching solution is tartaric acid: H 2 O 2 : H 2 O = 5 g: 50 cc: 100 cc. 제1항 또는 제2항에 있어서, 상기 비선택 식각용액은 NH4OH;H2O2;H2O=1:1:6이고, 선택식각용액은 타르타닉산:H2O2:H2O=5g:500cc:100cc인 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.3. The method of claim 1 or 2, wherein the non-selective etching solution is selected from the group consisting of NH 4 OH, H 2 O 2, H 2 O = 1: 1: 6 and the selective etching solution is tartanic acid: H 2 O 2 : H 2 O = 5 g: 500 cc: 100 cc. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960026369A 1996-06-29 1996-06-29 High power laser diode manufacturing method KR980006674A (en)

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KR1019960026369A KR980006674A (en) 1996-06-29 1996-06-29 High power laser diode manufacturing method

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KR1019960026369A KR980006674A (en) 1996-06-29 1996-06-29 High power laser diode manufacturing method

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KR980006674A true KR980006674A (en) 1998-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210059151A (en) * 2019-11-14 2021-05-25 주식회사 오이솔루션 Method for processing semiconductor wafer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210059151A (en) * 2019-11-14 2021-05-25 주식회사 오이솔루션 Method for processing semiconductor wafer

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