KR980006674A - High power laser diode manufacturing method - Google Patents
High power laser diode manufacturing method Download PDFInfo
- Publication number
- KR980006674A KR980006674A KR1019960026369A KR19960026369A KR980006674A KR 980006674 A KR980006674 A KR 980006674A KR 1019960026369 A KR1019960026369 A KR 1019960026369A KR 19960026369 A KR19960026369 A KR 19960026369A KR 980006674 A KR980006674 A KR 980006674A
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- KR
- South Korea
- Prior art keywords
- layer
- forming
- etching solution
- selective etching
- laser diode
- Prior art date
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- Semiconductor Lasers (AREA)
Abstract
본 발명은 반도체 패키지 공정에서 칩을 몰딩하는데 사용되는 몰드 다이를 개시한다. 이 레이저 다이오드의 제조방법은 활성층 위에 두께의 제1클래드층을 형성하는 단계;제1클래드층과 조성비가 다른 식각저지층을 형성하는 단계;식각 저지층 위에 제2클래드층을 형성하는 단계;클래드층 위에 소정 패턴을 콘택층과 실리콘산 화막층을 순차적으로 형성하는 단계; 제2클래드 층을 비선택 식각용액으로 소정 깊이까지 식각하는 단계; 전 단계에서 식각되지 않고 제2 클래드층을 선택식각용액으로 식각하는 단계를 포함한다.The present invention discloses a mold die for use in molding a chip in a semiconductor package process. A method for fabricating a laser diode includes the steps of forming a first cladding layer having a thickness on an active layer, forming an etch stop layer having a composition ratio different from that of the first cladding layer, forming a second cladding layer on the etch stop layer, Sequentially forming a contact layer and a silicon oxide layer in a predetermined pattern; Etching the second clad layer to a predetermined depth using a non-selective etching solution; And etching the second cladding layer with the selective etching solution without being etched in the previous step.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도와 제3도는 본 발명의 실시예에 따른 고출력 레이저 다이오드FIGS. 2 and 3 illustrate a high power laser diode according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026369A KR980006674A (en) | 1996-06-29 | 1996-06-29 | High power laser diode manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026369A KR980006674A (en) | 1996-06-29 | 1996-06-29 | High power laser diode manufacturing method |
Publications (1)
Publication Number | Publication Date |
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KR980006674A true KR980006674A (en) | 1998-03-30 |
Family
ID=66240480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960026369A KR980006674A (en) | 1996-06-29 | 1996-06-29 | High power laser diode manufacturing method |
Country Status (1)
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KR (1) | KR980006674A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210059151A (en) * | 2019-11-14 | 2021-05-25 | 주식회사 오이솔루션 | Method for processing semiconductor wafer |
-
1996
- 1996-06-29 KR KR1019960026369A patent/KR980006674A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210059151A (en) * | 2019-11-14 | 2021-05-25 | 주식회사 오이솔루션 | Method for processing semiconductor wafer |
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