KR970702506A - Channel waveguides and their applications - Google Patents

Abstract

The present invention relates to integrated optical channel waveguides and their applications as switches, modulators and sensors.

The channel waveguide has a shape of a channel-like structure which is located inside or on top of the planar substrate material and is defined by a narrow geometrically narrow shape, the confinement being perpendicular to the direction of propagation of light.

Single-mode integrated optical broadband channel waveguides have been described, which can, for example, guide light from the entire visible wavelength range, which is single mode, which effectively, ie consists of low light attenuation, and thus a practical single mode white light channel. It is known as a waveguide. If desired, light can be switched or modulated wavelength dependently or wavelength independent by, for example, electro-optical means.

The channel waveguide is basically manufactured by means of known processes, for example by changing the refractive index.

Description

Channel waveguides and their applications

Since this is an open matter, no full text was included.

3 is a diagram of the course and structure of the refractive index in RiKTP-SOWCW.

Claims (25)

The channel-like structure can be produced or a channel-like structure made of a suitable material can be applied by means of a process of varying the refractive index inside or on the surface-like substrate material 1; The shape and material parameters of the channel waveguide 2 thus manufactured are set in dependence on the wavelength range transmitted in the ultraviolet visible or infrared region, and thus the wavelength for single mode optical guidance in relation to the wavelength λ. The minimum width of the range (when λ and Δ λ are given in nm) is given by Δ λ = 0.48 × λ-85nn Where the parameters are: refractive index of the substrate (n ₁ ), refractive index of the plate (n ₃ ), refractive index of the refractive index distribution (f (x, y) (n ₂ ) on the surface, refractive index in the waveguide region Distribution (n _w = f (x, y), the cross-sectional shape of the channel waveguide (width α and depth t) and the position range of the channel waveguide in or above the substrate Δ λ> 0.48 × λ-85nm For example, the effective refractive index of the fundamental mode (N ₀ ) for each given wavelength (λ) in order to ensure single-mode operation of the channel waveguide 2 within, i.e., within a range between λ ₁ and λ ₁ + Δ λ As such, the single mode range is, from a technical point of view, on the one hand by the effective intrinsic vibration of the fundamental mode (N ₀ ) at wavelength λ ₁ + Δ λ and on the other hand by the lateral first mode (N ₁₎ at wavelength λ ₁ . ) Or the effective intrinsic vibration of the first direction N _{10 in} the depth direction; The effective refractive index Neff of the mode guided in the channel waveguide for transmission with a technically sufficient efficiency is at least 5 × the refractive index of the surrounding material, n _s , which is specified as the greater of the substrate refractive index n _l or the refractive index n ₃ . ^{Has a} value as large as 10 ⁻⁵ ; The minimum functional value (λ _min ) of the available wavelengths and the maximum possible value (λ _max ) of the available wavelengths are determined by the transmission range of the material used, and thus, a channel waveguide set as a single mode integrated optical broadband channel waveguide. . The channel waveguide according to claim 1, wherein the channel structure is narrowly defined in a two-dimensional plane perpendicular to the propagation direction (Z-axis) of light. The method of claim 1, wherein the channel-like structure is narrowly defined in a two-dimensional plane perpendicular to the propagation direction (Z axis) of the light, the wavelength dependence (dispersion) necessary for light wave guidance, ≧ 0, where n _s = n for n ₁ > n ₃ ; In the case of n ₃ > n ₁ , the channel waveguide is characterized in that n _s = n _3, that is, an increase in refractive index (n ₂ -n ₃ ). The method of claim 1, wherein the channel structure is not narrowly defined in a two-dimensional plane perpendicular to the propagation direction (Z-axis) of light, wavelength dependence (dispersion) necessary for light wave guidance, ≧ 0, where n _s = n for n ₁ > n ₃ ; In the case of n ₃ > n ₁ , the channel waveguide is characterized in that n _s = n _3, that is, an increase in refractive index (n ₂ -n ₃ ). The method of claim 1 wherein the shape and material parameters are in the wavelength range (when lambda and Δλ are expressed in nm). Δ λ> 0.48 × λ-85nm It can be set to ensure single mode operation of the channel waveguide within, the minimum value of the available wavelength (λ _min ; about 350 nm) and the maximum value of the available wavelength (λ _max dir 4 μm) by the optical transmission range of KTiOPO ₄ . The wavelength range Δλ transmitted in a single mode within the visible light spectrum, determined, includes a wavelength range greater than 350 nm, thus becoming a SOWCW set as a single mode white optical channel waveguide, rubidium ↔ potassium ion exchanged potassium tea Channel waveguide consisting of tanyl phosphate (KTiOPO ₄ ). 2. The channel waveguide according to claim 1, wherein the cross-sectional shape of the SOWCW (2) is any shape, specifically, a channel shape (strip shape), a rectangle, an ellipse, a circle, a triangle, or a polygon. The structure of claim 1, wherein the structure forming the SOWCW 2 is embedded as a channel in the substrate material 1, or is embedded in the surface of the substrate material 1, or applied to the surface of the substrate material 1. Channel waveguide, characterized in that. The surface (x ″ -z ″) and the two regions (y′-Z ′ plane, y ″ -z ″ plane) parallel to the yz plane of the cross section of the SOWCW 2. A channel waveguide, which is limited by one plane (x'-z 'plane) parallel to the plane) and located in the interior (depth t) or above the surface by a predetermined amount. 2. The channel waveguide according to claim 1, wherein in the glass or dielectric crystals as the substrate material, the step of converting the refractive index to produce the SOWCW (2) consists of an ion exchange process or an ion-diffusion process. 10. The channel waveguide according to claim 9, wherein anisotropic diffusion of the material in which the dielectric constant, specifically, the diffusion coefficient in the depth direction is larger than the lateral diffusion constant in KTiOPO ₄ can be used. The rubidium-potassium ion exchange channel waveguide is embedded in Z-cut potassium titanyl phosphate (KTiOPO ₄ , KTP), the diffusion predominantly occurring only in the depth direction, Thus, KTP engines that satisfy the lateral limit conditions, exhibit only a weak dispersion of the refractive index increase needed for optical waveguide within the desired wavelength range, and additionally have high electron electromodulation of the linear KOP engine. A channel waveguide, characterized by the use of a substance. 8. The waveguide structure according to claims 1, 6 and 7, for injection molding or stamping or centrifugal force, for a SOWCW (2) consisting of a polymer or an ormosor or both on a suitable substrate material (1) such as silicon. A channel waveguide, which can be applied by a process. The epitaxial lamination process according to any one of claims 1 to 6, wherein a step for changing the refractive index in the waveguide region 2 is performed for the I II-VI or III-V semiconductor material as the substrate material 1. , Channel doping, alloying, implantation of heterostructures of triple or quadruple II-VI or III-V semiconductor materials, or for the production of rib waveguides or reverse rib waveguides. SOWCW according to claim 1, 6 and 7, which makes it possible to produce a combination of oxide or nitride layers different from Si, SiO ₂ and SiON layers inside on a suitable substrate material 1, preferably silicon. Channel waveguide, characterized in that the process for providing (2) is used. The channel waveguide according to claim 1, wherein the process for producing the SOWCW (2) on a suitable substrate material (1) is a sol-gel process. 8. The method of claim 1, 6, or 7, wherein the glass, dielectric crystals or laminations, polymers or ormosors, sol-gel layers, II-VI or III-V semiconductor materials, Si, SiO ₂ , SiON layers, or different A channel waveguide, characterized in that the step of changing the refractive index in the waveguide region (2) for the oxide or nitride layer is an ion implantation process. 17. The waveguide fabrication process (ion exchange or ion-diffusion in dielectric crystals or ion exchange in glass) is combined with an ion implantation process to obtain a narrowly defined waveguide structured SOWCW (2). A channel waveguide. The method of claim 1, wherein the SOWCW is planted in the substrate material as a square, sarapy, triangular, circular, oval or polygonal groove; Embedded in the substrate material; Placed on the substrate material as square, trapezoidal, triangular or polygonal channels; A waveguide with strip-shaped overlay, having a rectangular, trapezoidal, triangular or polygonal shape; A channel waveguide, characterized in that it is a rib waveguide or an inverted rib waveguide. Electro-optic modulation; Acoustic optical modulation; Thermo-optic modulation; Magneto-optical modulation; Visible optical modulation; Photothermal modulation; Change in effective refractive index due to injection or release of free charge carriers in the semiconductor material; Electrooptic, acousto-optic, thermo-optic, magneto-optical, visible or photothermal modulation with the Fabry-Perot effect; Change in effective refractive index by injection or release of free charge carriers in a semiconductor material using the Fabry-Mero effect; Electro-optic, acousto-optic, thermo-optic, magneto-optical, visible or thermo-optic interception modulation; Blocking modulation due to a change in effective refractive index due to the injection or release of free charge carriers in the semiconductor material; Controllable waveguide amplification; Controllable polarization conversion; Based on one principle of waveguide mode switching, the size of the light in the SOWCW 2; External to the SOWCW 2 using the SOWCW as a wavelength selective broadband optical switch or broadband modulator to influence brightness, phase or polarization, or by means of a phase shifter or polarizer as an external device (such as a Pockel cell). In which wavelength selective transduction or orphan modulation occurs. 20. The apparatus of claim 19, further comprising a suitable substrate material and a corresponding modulation device; And for a light guided in a waveguide comprising at least two separate wavelengths λ _i or one or more wavelength ranges Δλ _i , single mode guidance of different wavelengths in the SOWCW 2 is given, A wavelength selective modulation may be performed by means of a modulation device, wherein the modulation is phase modulation, means for converting the effective refractive index of the guided light wave, amplitude modulation or luminance modulation using a Fabry-Perot resonator, or Amplitude modulation or luminance modulation, i.e., blocking modulation, by means of lowering the refractive index to the refractive index n ₁ of the substrate or to the refractive index n ₃ of the plate, or to specify the effect of the linear electron optical sensor r _ijk component. Method of using the SOWCW, characterized in that the adjustment of the polarization state of the light guided in the waveguide, which can be implemented by using. Use as a wavelength-independent broadband optical switch or broadband modulator for controlling the amplitude or brightness of light in the waveguide 2 based on the principle of electron absorption modulation; Or outside the waveguide by means of a change in the coupling effective rate between the light source and the waveguide, modulation of the light source itself, or additionally as a light weakening device (e.g. a wedge filter) as an external device, or by a controllable polarizing transducer associated with a polarizing SOWCW or polarizing device. A method of using SOWCW in connection with causing wavelength-independent conversion or modulation of light. At least one wavelength of light from the broad wavelength spectrum, for detecting transmission, reflection, or scattering changes, or changes in effective refractive index of the guided mode in the channel waveguide, is coupled into the overinput E of the SOWCW 2, A method of using SOWCW as a sensor, wherein photometric or coherent measurements of the influence of a measurement medium on light guided within a channel waveguide are measured. 23. The method of claim 22, wherein the influence of the measurement medium on the microscopic field of the guided mode is measured, wherein the measurement medium is brought into contact with the surface of the SOWCW 2 in only one region of the waveguide (correlation window 6). How to use SOWCW as a sensor. 23. The method of claim 22, wherein the reflectance of the waveguide output is determined by: the measuring medium acting as a reflector, the reflector being located or in contact with a predetermined distance from the waveguide longitudinal section; Or the reflector uses a predetermined reflecting material as a reflecting coating or uses the reflecting material itself as a reflecting material, the reflecting material changing reflectance depending on the peripheral measurement medium; Or the reflector is located at a predetermined distance from the longitudinal cross section of the waveguide, and the measurement medium is located between the longitudinal cross section of the waveguide and the reflector; A method of using SOWCW as a sensor, characterized in that it is determined by measuring retroreflected light or transmitted light or both. 25. The method according to claim 23 or 24, wherein the image and the window 6 or reflector 9 are reacted by a reactant which changes the properties affecting the light guided within the SOWCW 2 depending on the ambient measurement medium. Method of using SOWCW as a sensor, characterized in that the coating. ※ Note: The disclosure is based on the initial application.