KR970077595A - Semiconductor leadframe - Google Patents

Semiconductor leadframe Download PDF

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Publication number
KR970077595A
KR970077595A KR1019960018750A KR19960018750A KR970077595A KR 970077595 A KR970077595 A KR 970077595A KR 1019960018750 A KR1019960018750 A KR 1019960018750A KR 19960018750 A KR19960018750 A KR 19960018750A KR 970077595 A KR970077595 A KR 970077595A
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KR
South Korea
Prior art keywords
plating layer
nickel
lead frame
layer formed
semiconductor
Prior art date
Application number
KR1019960018750A
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Korean (ko)
Other versions
KR0183652B1 (en
Inventor
박세철
이규한
Original Assignee
이대원
삼성항공산업 주식회사
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Publication date
Application filed by 이대원, 삼성항공산업 주식회사 filed Critical 이대원
Priority to KR1019960018750A priority Critical patent/KR0183652B1/en
Publication of KR970077595A publication Critical patent/KR970077595A/en
Application granted granted Critical
Publication of KR0183652B1 publication Critical patent/KR0183652B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

본 발명은 금속 소재의 베어프레임상에 형성된 다층도금층을 구비하고 있는 반도체 리드프레임에 있어서, 상기 다층 도금층이 제1니켈도금층; 상기 제1니켈 도금층 상부에 형성된 Cu도금층; 상기 Cu도금층 상부에 형성된 제2니켈 도금층; 상기 제2니켈 도금층 위에 형성된 Pd도금층을 포함하는 것을 특징으로 하는 반도체 리드프레임을 제공한다. 본 발명에 따르면, 알로이 42소재의 베어프레임상에 팔라듐을 이용한 선도금공정시, 알로이 42소재내의 철과 팔라듐의 유전계열상 차이가 큰데서 기인되는 부식성 문제를 해결하여 내부식성과 납땜성이 우수한 리드프레임을 얻을 수 있다.The present invention provides a semiconductor lead frame having a multilayer plating layer formed on a bare frame made of a metal material, the multilayer plating layer comprising: a first nickel plating layer; A Cu plating layer formed on the first nickel plating layer; A second nickel plating layer formed on the Cu plating layer; It provides a semiconductor lead frame comprising a Pd plating layer formed on the second nickel plating layer. According to the present invention, in the lead gold process using palladium on the bare frame of the alloy 42 material, it solves the corrosion problem caused by a large difference in the dielectric series of iron and palladium in the alloy 42 material to excellent corrosion resistance and solderability A lead frame can be obtained.

Description

반도체 리드프레임Semiconductor leadframe

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도 및 제5도는 본 발명에 따른 리드프레임에 적용된 도금층의 구조를 나타낸 단면도이다.4 and 5 are cross-sectional views showing the structure of the plating layer applied to the lead frame according to the present invention.

Claims (7)

금속 소재의 베어프레임상에 형성된 다층 도금층을 구비하고 있는 반도체 리드프레임에 있어서, 상기 다층 도금층이 제1니켈 도금층; 상기 제1니켈 도금층 상부에 형성된 Cu도금층; 상기 Cu도금층 상부에 형성된 제2니켈 도금층; 상기 제2니켈 도금층 위에 형성된 Pd도금층을 포함하는 것을 특징으로 하는 반도체 리드프레임.A semiconductor lead frame having a multilayer plating layer formed on a bare frame made of a metal material, the semiconductor lead frame comprising: a first nickel plating layer; A Cu plating layer formed on the first nickel plating layer; A second nickel plating layer formed on the Cu plating layer; And a Pd plating layer formed on the second nickel plating layer. 제1항에 있어서, 상기 Pd도금층 상부에 Pd-X합금 도금층이 더 형성되어 있는 것을 특징으로 하는 반도체 리드프레임.The semiconductor lead frame according to claim 1, further comprising a Pd-X alloy plating layer formed on the Pd plating layer. 제2항에 있어서, 상기 Pd-X합금 도금층이 주성분인 Pd과, 금(Au), 코발트(Co), 텅스텐(W), 은(Ag), 티타늄(Ti), 몰리브덴(Mo) 및 주석(Sn)으로 이루어진 군으로부터 선택된 적어도 하나의 금속으로 이루어져 있는 것을 특징으로 하는 반도체 리드프레임.The method of claim 2, wherein the Pd-X alloy plating layer is a main component of Pd, gold (Au), cobalt (Co), tungsten (W), silver (Ag), titanium (Ti), molybdenum (Mo) and tin ( And at least one metal selected from the group consisting of Sn). 제1항에 있어서, 상기 제1니켈 도금층이 니켈 스트라이크 도금층인 것을 특징으로 하는 반도체 리드프레임.The semiconductor lead frame according to claim 1, wherein the first nickel plating layer is a nickel strike plating layer. 제1항에 있어서, 상기 Cu도금층이 Cu스트라이크 도금층인 것을 특징으로 하는 반도체 리드프레임.The semiconductor lead frame according to claim 1, wherein the Cu plating layer is a Cu strike plating layer. 제1항에 있어서, 상기 베어프레임이 구리(Cu), 니켈(Ni), 철(Fe) 및 이들의 합금중에서 선택된 금속으로 형성된 것을 특징으로 하는 반도체 리드프레임.The semiconductor leadframe of claim 1, wherein the bare frame is formed of a metal selected from copper (Cu), nickel (Ni), iron (Fe), and alloys thereof. 제1항에 있어서, 상기 베어프레임이 니켈과 철의 합금으로 형성된 것을 특징으로 하는 반도체 리드프레임.The semiconductor leadframe of claim 1, wherein the bare frame is formed of an alloy of nickel and iron. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960018750A 1996-05-30 1996-05-30 Semiconductor leadframe KR0183652B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960018750A KR0183652B1 (en) 1996-05-30 1996-05-30 Semiconductor leadframe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960018750A KR0183652B1 (en) 1996-05-30 1996-05-30 Semiconductor leadframe

Publications (2)

Publication Number Publication Date
KR970077595A true KR970077595A (en) 1997-12-12
KR0183652B1 KR0183652B1 (en) 1999-03-20

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KR1019960018750A KR0183652B1 (en) 1996-05-30 1996-05-30 Semiconductor leadframe

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Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100450090B1 (en) * 1999-10-01 2004-09-30 삼성테크윈 주식회사 Lead frame of semiconductor package and method of plating the same

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Publication number Publication date
KR0183652B1 (en) 1999-03-20

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