KR970077308A - How to Remove Particles in Plasma Etching Process - Google Patents

How to Remove Particles in Plasma Etching Process Download PDF

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Publication number
KR970077308A
KR970077308A KR1019960015542A KR19960015542A KR970077308A KR 970077308 A KR970077308 A KR 970077308A KR 1019960015542 A KR1019960015542 A KR 1019960015542A KR 19960015542 A KR19960015542 A KR 19960015542A KR 970077308 A KR970077308 A KR 970077308A
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KR
South Korea
Prior art keywords
etching process
plasma
reaction chamber
present
plasma etching
Prior art date
Application number
KR1019960015542A
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Korean (ko)
Inventor
권혁남
Original Assignee
김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015542A priority Critical patent/KR970077308A/en
Publication of KR970077308A publication Critical patent/KR970077308A/en

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Abstract

본 발명은 플라즈마 식각공정에서의 파티클 제거방법에 관해 개시한다. 본 발명에 의한 파티클 제거방법은 반응챔버에서 플라즈마를 이용한 식각공정을 실시한 후 플라즈마 온(ON)상태로 상기 반응챔버내에 불활성가스를 플로우 시키면서 펌핑을 실시한다.The present invention discloses a particle removing method in a plasma etching process. In the method for removing particles according to the present invention, an etching process using a plasma is performed in a reaction chamber, and pumping is performed while flowing an inert gas into the reaction chamber in a plasma ON state.

따라서 본 발명에 의하면, 이러한 일련의 공정에 의하여 반응챔버내에서 발생되는 파티클을 충분히 제거할 수 있으므로 본 발명을 이용하면, 디바이스의 결함을 방지하여 수율을 높일 수 있다.Therefore, according to the present invention, since the particles generated in the reaction chamber can be sufficiently removed by the series of steps, the present invention can prevent defects in the device and increase the yield.

Description

플라즈마 식각공정에서의 파티클(particle)제거방법How to Remove Particles in Plasma Etching Process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도 및 제2도는 각각 질화막과 산화막을 식각했을 경우 본 발명 및 종래 기술에 의한 방법으로 파티클을 제거한 후의 결과를 나타낸 도면이다.FIGS. 1 and 2 are views showing the results of removing the particles by the method of the present invention and the conventional method when the nitride film and the oxide film are etched, respectively.

Claims (3)

반응챔버에서 플라즈마를 이용한 식각공정을 실시한 후 플라즈마 온(ON)상태로 상기 반응챔버내에 불활성가스를 플로우 시키면서 펌핑을 실시하는 것을 특징으로 하는 플라즈마 식각공정에서의 파티클 제거방법.Wherein the plasma is etched using a plasma in a reaction chamber, and pumping is performed while flowing an inert gas into the reaction chamber in a plasma ON state. 제1항에 있어서, 상기 불활성가스로는 Ar 또는 He을 사용하는 것을 특징으로 하는 플라즈마 식각공정에서의 파티클 제거방법.The method of claim 1, wherein the inert gas is Ar or He. 제1항에 있어서, 상기 펌핑을 실시하는 과정에서 상기 반응챔버의 공급되는 RF전력은 최소로 유지하는 것을 특징으로 하는 플라즈마 식각공정에서의 파티클 제거방법.2. The method of claim 1, wherein the RF power supplied to the reaction chamber is maintained at a minimum during the pumping process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015542A 1996-05-11 1996-05-11 How to Remove Particles in Plasma Etching Process KR970077308A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960015542A KR970077308A (en) 1996-05-11 1996-05-11 How to Remove Particles in Plasma Etching Process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015542A KR970077308A (en) 1996-05-11 1996-05-11 How to Remove Particles in Plasma Etching Process

Publications (1)

Publication Number Publication Date
KR970077308A true KR970077308A (en) 1997-12-12

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Application Number Title Priority Date Filing Date
KR1019960015542A KR970077308A (en) 1996-05-11 1996-05-11 How to Remove Particles in Plasma Etching Process

Country Status (1)

Country Link
KR (1) KR970077308A (en)

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