KR970060494A - Capacitor structure - Google Patents

Capacitor structure Download PDF

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Publication number
KR970060494A
KR970060494A KR1019960001723A KR19960001723A KR970060494A KR 970060494 A KR970060494 A KR 970060494A KR 1019960001723 A KR1019960001723 A KR 1019960001723A KR 19960001723 A KR19960001723 A KR 19960001723A KR 970060494 A KR970060494 A KR 970060494A
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KR
South Korea
Prior art keywords
film
capacitor structure
lower electrode
silicon substrate
structure according
Prior art date
Application number
KR1019960001723A
Other languages
Korean (ko)
Other versions
KR100215791B1 (en
Inventor
김동천
조월렴
Original Assignee
구자홍
Lg 전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019960001723A priority Critical patent/KR100215791B1/en
Publication of KR970060494A publication Critical patent/KR970060494A/en
Application granted granted Critical
Publication of KR100215791B1 publication Critical patent/KR100215791B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

본 발명은 커패시터 구조에 관한 것으로, 커패시터의 전기적 특성(즉 유전율, 누설전류 등)을 개선하여 고집 적소자에 적합하도록 한 것이다.The present invention relates to a capacitor structure, which improves the electrical characteristics (that is, dielectric constant, leakage current, etc.) of a capacitor so as to be suitable for a highly integrated device.

본 발명에 따른 커패시터 구조는 실리콘 기판; 상기 실리콘 기판상에 형성되고, Pt막과 산화막을 포함하는 하부전극; 상기 하부전극상에 형성된 BaXSr1-XTiO3(0＜x＜1)막; 상기 BaXSr1-XTiO3(0＜x＜1)막위에 형성된 Pt막을 포함하여 구성된다.A capacitor structure according to the present invention includes: a silicon substrate; A lower electrode formed on the silicon substrate and including a Pt film and an oxide film; A Ba x Sr 1 - X TiO 3 (0 <x <1) film formed on the lower electrode; And a Pt film formed on the Ba x Sr 1 - X TiO 3 (0 <x <1) film.

Description

커패시터 구조Capacitor structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명에 따른 커패시터의 제1실시예.FIG. 3 is a first embodiment of a capacitor according to the present invention. FIG.

Claims (6)

실리콘 기판; 상기 실리콘 기판상에 형성되고, Pt막과 산화막을 포함하는 하부전극; 상기 하부전극상에 형성된 BaXSr1-XTiO3(0＜x＜1)막; 상기 BaXSr1-XTiO3(0＜x＜1)막위에 형성된 Pt막을 포함하여 구성된 것을 특징으로 하는 커패시터 구조.A silicon substrate; A lower electrode formed on the silicon substrate and including a Pt film and an oxide film; A Ba x Sr 1 - X TiO 3 (0 <x <1) film formed on the lower electrode; And a Pt film formed on the Ba x Sr 1 - X TiO 3 (0 <x <1) film. 제1항에 있어서, 상기 Pt막은 상기 실리콘기판상에 SiO2막이 더 형성되는 것을 특징으로 하는 커패시터 구조.The capacitor structure according to claim 1, wherein the Pt film further comprises an SiO 2 film formed on the silicon substrate. 제1항에 있어서, 상기 Pt막은 상기 산화막보다 얇게 형성되는 것을 특징으로 하는 커패시터 구조.The capacitor structure according to claim 1, wherein the Pt film is formed to be thinner than the oxide film. 제1항에 있어서, 상기 하부전극을 구성하는 Pt막과 산화막 사이에 Ti막이 형성된 것을 특징으로 하는 커패시터 구조.The capacitor structure according to claim 1, wherein a Ti film is formed between the Pt film and the oxide film constituting the lower electrode. 제1항에 있어서, 상기 산화막은 RuO2-X4(0≤x≤1) 또는 IrO2(0≤x≤1)중 1종인 것을 특징으로 하는 커패시터 구조.The capacitor structure according to claim 1, wherein the oxide film is one of RuO 2-X 4 (0 ? X ? 1) or IrO 2 (0 ? X ? 1). 제1항에 있어서, 상기 실리콘기판상에 다결정 실리콘막과, 상기 하부전극에 Pt막과 Ti막 및 Al막 또는 Ru막중 1종이 더 형성된 것을 특징으로 하는 커패시터 구조.The capacitor structure according to claim 1, wherein a polycrystalline silicon film is formed on the silicon substrate, and one of a Pt film, a Ti film, and an Al film or a Ru film is further formed on the lower electrode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960001723A 1996-01-26 1996-01-26 Capacitor device KR100215791B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960001723A KR100215791B1 (en) 1996-01-26 1996-01-26 Capacitor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960001723A KR100215791B1 (en) 1996-01-26 1996-01-26 Capacitor device

Publications (2)

Publication Number Publication Date
KR970060494A true KR970060494A (en) 1997-08-12
KR100215791B1 KR100215791B1 (en) 1999-08-16

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ID=19450151

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960001723A KR100215791B1 (en) 1996-01-26 1996-01-26 Capacitor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100533991B1 (en) * 1997-12-27 2006-05-16 주식회사 하이닉스반도체 Manufacturing method of high dielectric capacitor of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428500B2 (en) * 2001-07-13 2010-03-10 富士通マイクロエレクトロニクス株式会社 Capacitor element and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100533991B1 (en) * 1997-12-27 2006-05-16 주식회사 하이닉스반도체 Manufacturing method of high dielectric capacitor of semiconductor device

Also Published As

Publication number Publication date
KR100215791B1 (en) 1999-08-16

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