KR970054560A - 함몰전극형 태양전지의 제조방법 - Google Patents
함몰전극형 태양전지의 제조방법 Download PDFInfo
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- KR970054560A KR970054560A KR1019950059493A KR19950059493A KR970054560A KR 970054560 A KR970054560 A KR 970054560A KR 1019950059493 A KR1019950059493 A KR 1019950059493A KR 19950059493 A KR19950059493 A KR 19950059493A KR 970054560 A KR970054560 A KR 970054560A
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- South Korea
- Prior art keywords
- semiconductor substrate
- oxide film
- forming
- electrode
- silicon oxide
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims abstract 6
- 239000000758 substrate Substances 0.000 claims abstract 19
- 239000004065 semiconductor Substances 0.000 claims abstract 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract 7
- 239000004020 conductor Substances 0.000 claims abstract 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 4
- 230000015572 biosynthetic process Effects 0.000 claims abstract 4
- 238000000151 deposition Methods 0.000 claims abstract 4
- 239000012535 impurity Substances 0.000 claims abstract 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract 4
- 239000010936 titanium Substances 0.000 claims abstract 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 3
- 150000001875 compounds Chemical class 0.000 claims abstract 3
- 239000001301 oxygen Substances 0.000 claims abstract 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 238000007747 plating Methods 0.000 claims abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052861 titanite Inorganic materials 0.000 claims 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
본 발명은 p형 반도체 기판에 텍스처링을 실시하여 기판 전면과 후면에 피라미드 구조를 형성하는 단계; 상기 반도체 기판 전면에 n형 불순물을 확산하여 pn접합으로 n+층을 형성하는 단계; 반도체 기판 전면에서 전극 형성 영역을 제외한 나머지 영역에 티탄과 산소를 함유하는 화합물을 분무증착하여 산화규소막과 산화티탄막을 형성한 다음, 반도체 기판 후면에 산화규소막과 산화티탄막을 형성하는 단계; 상기 반도체 기판 전면의 전극 형성 영역에 홈을 형성하는 단계; 상기 홈내부로 n형 불순물을 도핑하는 단계; 상기 반도체 기판 후면에 도전성 물질을 증착시켜 도전물질층을 형성하는 단계; 상기 반도체 기판 전면의 홈과 반도체 기판 후면의 도전물질층 상부에 전도성 금속을 도금하여 전면전극과 후면전극을 각각 형성하는 단계를 포함하는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법을 제공한다. 본 발명에 따르면, 낮은 제조원가로 산화규소막보다 큰 굴절율을 갖는 산화티탄막을 더 형성시킴으로써 반도체 기판 전면에서의 입사광 반사로 인한 광학적 손실을 감소시킬 수 있어서 전지의 변환효율이 향상된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 함몰전극형 태양전지의 구조를 나타낸 도면이다.
Claims (5)
- p형 반도체 기판에 텍스처링을 실시하여 기판 전면과 후면에 피라미드 구조를 형성하는 단계; 상기 반도체 기판 전면에 n형 불순물을 확산하여 pn접합으로 n+층을 형성하는 단계; 반도체 기판 전면에서 전극 형성 영역을 제외한 나머지 영역에 티탄과 산소를 함유하는 화합물을 분무증착하여 산화규소막과 산화티탄막을 형성한 다음, 반도체 기판 후면에 산화규소막과 산화티탄막을 형성하는 단계; 상기 반도체 기판 전면의 전극 형성 영역에 홈을 형성하는 단계; 상기 홈내부로 n형 불순물을 도핑하는 단계; 상기 반도체 기판 후면에 도전성 물질을 증착시켜 도전물질층을 형성하는 단계; 상기 반도체 기판 전면의 홈과 반도체 기판 후면의 도전물질층 상부에 전도성 금속을 도금하여 전면전극과 후면전극을 각각 형성하는 단계를 포함하는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법.
- 제1항에 있어서, 상기 산화규소막과 산하티탄막을 형성하는 단계에서 티탄과 산소를 함유한 화합물이 테트라이소프로필 티타나이트, 티타늄 테트라클로라이드로 이루어진 군으로부터 선택되는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법.
- 제1항에 있어서, 상기 산화규소막의 두께가 100∼200Å가 되도록 형성하는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법.
- 제1항에 있어서, 상기 산화티탄막의 두께가 600∼720Å가 되도록 형성하는 것을 특징으로 하는 함몰전극형 태양전지의 제조방법.
- 제1항에 있어서, 상기 전극이 니켈, 구리, 은, 티타늄 및 팔라듐, 주석, 아연, 인듐 및 그 산화물로 이루어진 군으로부터 선택된 적어도 하나인 것을 특징으로 하는 함몰전극형 태양전지의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950059493A KR100322734B1 (ko) | 1995-12-27 | 1995-12-27 | 함몰전극형 태양전지의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950059493A KR100322734B1 (ko) | 1995-12-27 | 1995-12-27 | 함몰전극형 태양전지의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970054560A true KR970054560A (ko) | 1997-07-31 |
| KR100322734B1 KR100322734B1 (ko) | 2002-06-20 |
Family
ID=37460752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950059493A KR100322734B1 (ko) | 1995-12-27 | 1995-12-27 | 함몰전극형 태양전지의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100322734B1 (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104022183B (zh) * | 2014-05-30 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | 一种超薄柔性晶体硅电池的制备方法 |
-
1995
- 1995-12-27 KR KR1019950059493A patent/KR100322734B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100322734B1 (ko) | 2002-06-20 |
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