KR970054410A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
KR970054410A
KR970054410A KR1019950052206A KR19950052206A KR970054410A KR 970054410 A KR970054410 A KR 970054410A KR 1019950052206 A KR1019950052206 A KR 1019950052206A KR 19950052206 A KR19950052206 A KR 19950052206A KR 970054410 A KR970054410 A KR 970054410A
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KR
South Korea
Prior art keywords
semiconductor substrate
semiconductor device
trench
high concentration
concentration impurity
Prior art date
Application number
KR1019950052206A
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Korean (ko)
Other versions
KR0186187B1 (en
Inventor
이경일
손상희
Original Assignee
문정환
Lg 반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 문정환, Lg 반도체 주식회사 filed Critical 문정환
Priority to KR1019950052206A priority Critical patent/KR0186187B1/en
Publication of KR970054410A publication Critical patent/KR970054410A/en
Application granted granted Critical
Publication of KR0186187B1 publication Critical patent/KR0186187B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Abstract

본 발명은 반도체 소자에 관한 것으로, 게이트폭의 감소로 인해 나타나는 단채널 효과를 개선하여 고집적소자 제조시에 적합하도록 한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and improves short channel effects due to a reduction in gate width, thereby making it suitable for fabricating high integrated devices.

본 발명에 따른 반도체 소자는 반도체 기판; 상기 반도체 기판상에 형성된 트렌치; 상기 트렌치내에 형성된 게이트 절연막; 상기 게이트 절연막위에 형성되고, 상기 트렌치를 매립하는 게이트전극; 상기 게이트전극 양측의 반도체기판에 형성된 고농도 불순물 영역들; 상기 고농도 불순물영역들과 인접하는 반도체기판에 형성된 소오스/드레인 영역들을 포함하여 구성된다.A semiconductor device according to the present invention comprises a semiconductor substrate; A trench formed on the semiconductor substrate; A gate insulating film formed in the trench; A gate electrode formed on the gate insulating film and filling the trench; High concentration impurity regions formed in the semiconductor substrate on both sides of the gate electrode; And source / drain regions formed in the semiconductor substrate adjacent to the high concentration impurity regions.

Description

반도체 소자Semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제5도는 본 발명에 따른 반도체 소자의 단면도.5 is a cross-sectional view of a semiconductor device according to the present invention.

제6도는 본 발명에 따른 반도체 소자에 있어서, 게이트 길이에 따른 문턱전압의 변화를 나타낸 그래프.6 is a graph showing a change in threshold voltage according to a gate length in the semiconductor device according to the present invention.

Claims (5)

반도체 기판; 상기 반도체기판상에 형성된 트렌치; 상기 트렌치내에 형성된 게이트 절연막; 상기 게이트 절연막위에 형성되고, 상기 트렌치를 매립하는 게이트전극; 상기 게이트전극 양측의 반도체기판에 형성된 고농도 불순물 영역들; 상기 고농도 불순물 영역들과 인접하는 반도체 기판에 형성된 소오스/드레인 영역들; 을 포함하여 구성된 것을 특징으로 하는 반도체 소자.Semiconductor substrates; A trench formed on the semiconductor substrate; A gate insulating film formed in the trench; A gate electrode formed on the gate insulating film and filling the trench; High concentration impurity regions formed in the semiconductor substrate on both sides of the gate electrode; Source / drain regions formed in the semiconductor substrate adjacent to the high concentration impurity regions; A semiconductor device comprising a. 제1항에 있어서, 상기 트렌치의 깊이는 상기 소오스/드레인 영역들 깊이의 약 1∼2배임을 특징으로 하는 반도체 소자.The semiconductor device of claim 1, wherein a depth of the trench is about 1 to 2 times a depth of the source / drain regions. 제1항에 있어서, 상기 고농도 불순물영역들은 소오스/드레인 영역들 깊이보다 얕게 형성된 것을 특징으로 하는 반도체 소자.The semiconductor device of claim 1, wherein the high concentration impurity regions are formed to be shallower than the source / drain regions. 제1항에 있어서, 상기 고농도 불순물 영역들은 소오스/드레인 영역들의 전기전도도 보다 높은 전기전도도를 갖는 것을 특징으로 하는 반도체 소자.The semiconductor device of claim 1, wherein the high concentration impurity regions have a higher electrical conductivity than that of the source / drain regions. 제1항에 있어서, 상기 반도체기판의 불순물 농도는 약 5×1016∼5×1017/㎤인 것을 특징으로 하는 반도체 소자.The semiconductor device of claim 1, wherein an impurity concentration of the semiconductor substrate is about 5 × 10 16 to 5 × 10 17 / cm 3. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950052206A 1995-12-19 1995-12-19 Semiconductor device KR0186187B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950052206A KR0186187B1 (en) 1995-12-19 1995-12-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950052206A KR0186187B1 (en) 1995-12-19 1995-12-19 Semiconductor device

Publications (2)

Publication Number Publication Date
KR970054410A true KR970054410A (en) 1997-07-31
KR0186187B1 KR0186187B1 (en) 1999-03-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950052206A KR0186187B1 (en) 1995-12-19 1995-12-19 Semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521994B1 (en) * 1996-12-27 2005-12-21 페어차일드코리아반도체 주식회사 Trench gate type MOS transistor and its manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521994B1 (en) * 1996-12-27 2005-12-21 페어차일드코리아반도체 주식회사 Trench gate type MOS transistor and its manufacturing method

Also Published As

Publication number Publication date
KR0186187B1 (en) 1999-03-20

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