KR970053161A - Semiconductor Devices with Inclined Bonding Pads - Google Patents

Semiconductor Devices with Inclined Bonding Pads Download PDF

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Publication number
KR970053161A
KR970053161A KR1019950047323A KR19950047323A KR970053161A KR 970053161 A KR970053161 A KR 970053161A KR 1019950047323 A KR1019950047323 A KR 1019950047323A KR 19950047323 A KR19950047323 A KR 19950047323A KR 970053161 A KR970053161 A KR 970053161A
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KR
South Korea
Prior art keywords
bonding
layers
layer
semiconductor device
sides
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Application number
KR1019950047323A
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Korean (ko)
Inventor
홍성학
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950047323A priority Critical patent/KR970053161A/en
Publication of KR970053161A publication Critical patent/KR970053161A/en

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Abstract

본 발명은 와이어가 본딩되는 영역인 본딩패드를 경사지게 형성하여 소자의 소형화를 이루고 와이어의 본딩력을 최대화 할 수 있도록 구성한 반도체 패캐이지를 개시한다.The present invention discloses a semiconductor package configured to incline a bonding pad, which is an area to which wires are bonded, to achieve miniaturization of the device and to maximize the bonding force of the wires.

본 발명은 소자 제조공정을 거친 실리콘 기판상에 다수의 접합층을 형성하고 각 접합층 양측에 절연층을 형성한 후 각 접합층의 상부에는 도전성의 금속이 증착된 다수의 본딩 패드가 형성되며, 각 본딩 패드의 양측의 절연층 상부에는 보호층이 구성된 반도체 소자의 각 접합층을 상부면이 경사진 상태로 구성하고 경사진 각 접합층 표면에 도전성의 금속을 균일하게 증착시켜 상부면이 경사진 상태의 다수의 본딩 패드를 구성하였다.According to the present invention, after forming a plurality of bonding layers on the silicon substrate subjected to the device manufacturing process and forming an insulating layer on both sides of each bonding layer, a plurality of bonding pads on which conductive metals are deposited are formed on the bonding layers. Each bonding layer of the semiconductor element having the protective layer is formed on the inclined top surface, and the conductive metal is uniformly deposited on the inclined surface of each bonding layer, and the top surface is inclined on the insulating layers on both sides of each bonding pad. A plurality of bonding pads in a state were configured.

Description

경사진 본딩 패드를 구비한 반도체 소자Semiconductor Devices with Inclined Bonding Pads

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따른 반도체 소자의 본딩 패드의 부분 단면도.3 is a partial cross-sectional view of a bonding pad of a semiconductor device according to the present invention.

Claims (4)

소자 제조공정을 거친 실리콘 기판상에 다수의 접합층을 형성하고 각 접합층 양측에 절연층을 형성한 후 상기 각 접합층의 상부에는 도전성의 금속이 증착된 다수의 본딩 패드가 형성되며, 상기 각 본딩 패드의 양측의 절연층 상부에는 보호층이 구성된 반도체 소자에 있어서, 상기 각 접합층은 상부면을 경사지게 구성하고 경사진 상기 각 접합층 표면에 도전성의 금속을 균일하게 증착시켜 상부면이 경사진 상태의 다수의 본딩 패드를 구비한 것을 특징으로 하는 반도체 소자.After forming a plurality of bonding layers on the silicon substrate subjected to the device manufacturing process, and forming an insulating layer on both sides of each bonding layer, a plurality of bonding pads on which the conductive metal is deposited are formed on the bonding layers. In a semiconductor device having a protective layer formed on an insulating layer on both sides of a bonding pad, each of the bonding layers has an inclined top surface, and uniformly deposits conductive metal on the inclined surface of each bonding layer, thereby inclining the top surface. A semiconductor device comprising a plurality of bonding pads in a state. 제1항에 있어서, 상기 각 접합층 및 각 접합층에 증착된 금속층은 와이어로 서로 접속되는 리드를 향하여 상향 경사지게 구성한 것을 특징으로 하는 반도체 소자.The semiconductor device according to claim 1, wherein each of the bonding layers and the metal layers deposited on the bonding layers is inclined upwardly toward leads connected to each other by wires. 소자 제조공정을 거친 실리콘 기판상에 다수의 접합층을 형성하고 각 접합층 양측에 절연층을 형성한 후 상기 각 접합층의 상부에는 도전성의 금속이 증착된 다수의 본딩 패드가 형성되며, 상기 각 본딩 패드의 양측에 절연층 상부에는 보호층이 구성된 반도체 소자에 있어서, 상기 각 접합층 표면에 도전성의 금속을 경사지게 증착시켜 구성된 상부면이 경사진 상태의 다수의 본딩 패드를 구비한 것을 특징으로 하는 반도체 소자.After forming a plurality of bonding layers on the silicon substrate subjected to the device manufacturing process, and forming an insulating layer on both sides of each bonding layer, a plurality of bonding pads on which the conductive metal is deposited are formed on the bonding layers. In a semiconductor device having a protective layer formed on the insulating layer on both sides of the bonding pads, a plurality of bonding pads having inclined top surfaces formed by inclining a conductive metal on the surface of each bonding layer are inclined. Semiconductor device. 제3항에 있어서, 상기 각 접합층에 증착된 금속층은 와이어로 서로 접속되는 리드를 향하여 상향 경사지게 구성한 것을 특징으로 하는 반도체 소자.4. The semiconductor device according to claim 3, wherein the metal layers deposited on the bonding layers are inclined upwardly toward leads connected to each other by wires. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950047323A 1995-12-07 1995-12-07 Semiconductor Devices with Inclined Bonding Pads KR970053161A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950047323A KR970053161A (en) 1995-12-07 1995-12-07 Semiconductor Devices with Inclined Bonding Pads

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950047323A KR970053161A (en) 1995-12-07 1995-12-07 Semiconductor Devices with Inclined Bonding Pads

Publications (1)

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KR970053161A true KR970053161A (en) 1997-07-29

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