KR970051165A - Compound memory device - Google Patents
Compound memory device Download PDFInfo
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- KR970051165A KR970051165A KR1019950057002A KR19950057002A KR970051165A KR 970051165 A KR970051165 A KR 970051165A KR 1019950057002 A KR1019950057002 A KR 1019950057002A KR 19950057002 A KR19950057002 A KR 19950057002A KR 970051165 A KR970051165 A KR 970051165A
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- type memory
- memory
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- Static Random-Access Memory (AREA)
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Abstract
본 발명은 복수의 메모리 형태를 구비한 복합 메모리 장치에 관한 것으로서, 주변의 제어로직과 워드라인 및 비트라인을 공유하는 서로 다른 형태의 제1형태 메모리 셀 및 제2형태 메모리셀; 및 상기 워드라인을 입력으로 하여 제1형태 메모리셀과 제2형태 메모리 셀을 선택적으로 동작시키는 제1형태 메모리/제2형태 메모리 선택부를 포함함을 특징으로 한다.The present invention relates to a complex memory device having a plurality of memory types, comprising: a first type memory cell and a second type memory cell of different types sharing word lines and bit lines with peripheral control logic; And a first type memory / second type memory selector configured to selectively operate a first type memory cell and a second type memory cell by using the word line as an input.
상술한 바와 같이 본 발명에 의하여, 두가지 형태의 메모리 셀을 하나의 메모리 칩 내에 함께 둠으로써 메모리 용량 증가에 따른 칩의 크기를 줄일 수 있다.As described above, according to the present invention, by placing two types of memory cells together in one memory chip, it is possible to reduce the size of the chip as the memory capacity increases.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 일실시예에 따른 RAM과 ROM을 구비한 복합 메모리 장치의 메모리 어레이 부분 및 워드라인 제어 부분을 도시한 것이다. 제3도는 6-TR SRAM과 NOR 형태의 ROM기능을 하는 메모리로서 메모리 셀 어레이 부분과 워드라인 제어 부분을 도시한 것이다.2 illustrates a memory array portion and a word line control portion of a complex memory device having RAM and ROM according to an embodiment of the present invention. FIG. 3 shows a memory cell array portion and a word line control portion as a memory having a 6-TR SRAM and a NOR type ROM function.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057002A KR970051165A (en) | 1995-12-26 | 1995-12-26 | Compound memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057002A KR970051165A (en) | 1995-12-26 | 1995-12-26 | Compound memory device |
Publications (1)
Publication Number | Publication Date |
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KR970051165A true KR970051165A (en) | 1997-07-29 |
Family
ID=66618244
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950057002A KR970051165A (en) | 1995-12-26 | 1995-12-26 | Compound memory device |
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KR (1) | KR970051165A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060057161A (en) * | 2004-11-23 | 2006-05-26 | 주식회사 하이닉스반도체 | Circuit for selecting type of combo memory |
KR100639001B1 (en) * | 1999-02-02 | 2006-10-25 | 마츠시타 덴끼 산교 가부시키가이샤 | Semiconductor memory device |
-
1995
- 1995-12-26 KR KR1019950057002A patent/KR970051165A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100639001B1 (en) * | 1999-02-02 | 2006-10-25 | 마츠시타 덴끼 산교 가부시키가이샤 | Semiconductor memory device |
KR20060057161A (en) * | 2004-11-23 | 2006-05-26 | 주식회사 하이닉스반도체 | Circuit for selecting type of combo memory |
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