KR970030797A - NAND Flash Memory Devices - Google Patents

NAND Flash Memory Devices Download PDF

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Publication number
KR970030797A
KR970030797A KR1019950040719A KR19950040719A KR970030797A KR 970030797 A KR970030797 A KR 970030797A KR 1019950040719 A KR1019950040719 A KR 1019950040719A KR 19950040719 A KR19950040719 A KR 19950040719A KR 970030797 A KR970030797 A KR 970030797A
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KR
South Korea
Prior art keywords
select transistor
flash memory
film thickness
string
gate insulating
Prior art date
Application number
KR1019950040719A
Other languages
Korean (ko)
Inventor
최정달
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950040719A priority Critical patent/KR970030797A/en
Publication of KR970030797A publication Critical patent/KR970030797A/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

플래쉬 메모리소자에 대해 기재되어 있다. 이는, 다수의 메모리 셀 트랜지스터가 스트링 선택 트랜지스터와 그라운드 선택 트랜지스터 사이에 직렬로 연결되는 낸드형의 플래쉬 메모리소자에 있어서, 그라운드 선택 트랜지스터의 게이트절연막 두께와 스트링 선택 트랜지스터의 게이트절연막 두께는 서로 다르고, 선택 트랜지스터들의 게이트절연막 두께는 메모리 셀 트랜지스터의 게이트절연막 두께 보다 두꺼운 것을 특징으로 한다. 따라서, 스트링 전류의 분포를 줄이게 되어, 종래 기술의 문제점인 프로그램된 셀 상태에 따른 스트링 전류의 큰 차이에 의한 오동작이나, 스트링 전류 감소에 따른 데이터의 센싱시간의 증가 문제를 해결할 수 있다.Flash memory devices are described. In the NAND type flash memory device in which a plurality of memory cell transistors are connected in series between a string select transistor and a ground select transistor, the gate insulation film thickness of the ground select transistor and the gate insulation film thickness of the string select transistor are different from each other. The gate insulating film thickness of the transistors is greater than the gate insulating film thickness of the memory cell transistor. Accordingly, the distribution of the string currents can be reduced, thereby solving the problem of malfunction due to a large difference in the string currents according to the programmed cell state or an increase in the sensing time of the data due to the decrease in the string currents.

Description

낸드형 플래쉬 메모리 소자NAND Flash Memory Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4도는 상기 제2도의 Ⅲ-Ⅲ' 선을 잘라 본 단면도로서, 본 발명의 일 실시예로 제조된 낸드형 플래쉬 메모리소자를 나타낸다.4 is a cross-sectional view taken along line III-III ′ of FIG. 2 and illustrates a NAND flash memory device manufactured according to an embodiment of the present invention.

제5도는 상기 제2도의 Ⅲ-Ⅲ' 선을 잘라 본 단면도로서, 본 발명의 다른 실시예로 제조된 낸드형 플래쉬 메모리소자를 나타낸다.FIG. 5 is a cross-sectional view taken along line III-III ′ of FIG. 2 and illustrates a NAND flash memory device manufactured according to another embodiment of the present invention.

Claims (4)

다수의 메모리 셀 트랜지스터가 스트링 트랜지스터와 그라운드 선택 트랜지스터 사이에 직렬로 연결되는 낸드형의 플래쉬 메모리소자에 있어서, 그라운드 선택 트랜지스터의 게이트절연막 두께와 스트링 선택 트랜지스터의 게이트절연막 두께는 서로 다르고, 상기 선택 트랜지스터들의 게이트절연막 두께는 메모리 셀 트랜지스터의 게이트절연막 두께 보다 두꺼운 것을 특징으로 하는 낸드형 프래쉬 메모리소자.In a NAND type flash memory device in which a plurality of memory cell transistors are connected in series between a string transistor and a ground select transistor, the gate insulation film thickness of the ground select transistor and the gate insulation film thickness of the string select transistor are different from each other. The NAND flash memory device having a gate insulating film thickness greater than that of a memory cell transistor. 제1항에 있어서, 상기 메모리 셀 트랜지스터의 게이트전극은 플로우팅 게이트와 컨트롤 게이트가 적층된 형태로 형성되어 있는 것을 특징으로 하는 낸드형 플래쉬 메모리소자.The NAND flash memory device of claim 1, wherein the gate electrode of the memory cell transistor is formed by stacking a floating gate and a control gate. 제1항에 있어서, 상기 그라운드 선택 트랜지스터의 게이트절연막은 상기 스트링 선택 트랜지스터의 게이트절연막 보다 두껍게 형성되는 것을 특징으로 하는 낸드형 플래쉬 메모리소자.The NAND flash memory device of claim 1, wherein the gate insulating layer of the ground select transistor is formed to be thicker than the gate insulating layer of the string select transistor. 제1항에 있어서, 상기 스트링 선택 트랜지스터의 게이트절연막은 상기 그라운드 선택 트랜지스터의 게이트절연막 보다 두껍게 형성되어 있는 것을 특징으로 하는 낸드형 플래쉬 메모리소자.The NAND flash memory device of claim 1, wherein the gate insulating film of the string select transistor is formed thicker than the gate insulating film of the ground select transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950040719A 1995-11-10 1995-11-10 NAND Flash Memory Devices KR970030797A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950040719A KR970030797A (en) 1995-11-10 1995-11-10 NAND Flash Memory Devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040719A KR970030797A (en) 1995-11-10 1995-11-10 NAND Flash Memory Devices

Publications (1)

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KR970030797A true KR970030797A (en) 1997-06-26

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990071463A (en) * 1998-02-05 1999-09-27 가나이 쓰토무 Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990071463A (en) * 1998-02-05 1999-09-27 가나이 쓰토무 Semiconductor integrated circuit device

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