KR970024192A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- KR970024192A KR970024192A KR1019950039001A KR19950039001A KR970024192A KR 970024192 A KR970024192 A KR 970024192A KR 1019950039001 A KR1019950039001 A KR 1019950039001A KR 19950039001 A KR19950039001 A KR 19950039001A KR 970024192 A KR970024192 A KR 970024192A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- semiconductor device
- bpsg
- oxide film
- manufacturing
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체장치 및 그 제조방법에 관해 개시한다. 본 발명의 반도장치는 BPSG막을 한 구성요소로 구비하는 반도체장치에 있어서, 상기 BPSG막의 양쪽면과 접하는 서로 연결되지 않은 도전막중 어느 한 도전막에 전기적으로 안정한 상기 BPSG이외의 다른 절연막을 구비한다.The present invention relates to a semiconductor device and a manufacturing method thereof. A semiconductor device comprising a BPSG film as one component of the present invention comprises an insulating film other than the BPSG that is electrically stable on any one of the conductive films that are not connected to each other in contact with both surfaces of the BPSG film.
본 발명에 의하면, 상기 BPSG막의 어느 한 면에 절연막을 구비함으로 인해 상기 BPSG 막의 핀 홀(Pinhole)에 의한 그 상, 하부의 도전막간의 숏을 방지할 수 있고, 상기 BPSG막의 불순물 도핑농도가 감소되는 것을 막을 수 있다.According to the present invention, by providing an insulating film on one surface of the BPSG film, it is possible to prevent a short between the upper and lower conductive films due to the pinhole of the BPSG film, and the impurity doping concentration of the BPSG film is reduced. Can be prevented.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 종래 기술에 의한 반도체장치의 단면도,1 is a cross-sectional view of a semiconductor device according to the prior art,
제2도는 본 발명에 의한 반도체장치의 단면도,2 is a cross-sectional view of a semiconductor device according to the present invention;
제3도는 내지 제5도는 본 발명에 의한 반도체장치의 제조방법을 단계별로 나타낸 도면들이다.3 to 5 are steps illustrating a method of manufacturing a semiconductor device according to the present invention step by step.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950039001A KR970024192A (en) | 1995-10-31 | 1995-10-31 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950039001A KR970024192A (en) | 1995-10-31 | 1995-10-31 | Semiconductor device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970024192A true KR970024192A (en) | 1997-05-30 |
Family
ID=66586763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950039001A KR970024192A (en) | 1995-10-31 | 1995-10-31 | Semiconductor device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970024192A (en) |
-
1995
- 1995-10-31 KR KR1019950039001A patent/KR970024192A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |