KR970022547A - Chemically Amplified Forged Resist Compositions - Google Patents

Abstract

The chemically amplified forged resist composition contains (A) an organic solvent, (B) a base resin, (C) a photoacid generator, and optionally (D) a dissolution rate regulator. The base resin (B) is a hydroxystyrene copolymer having different acid labile groups and Mw of 3,000-300,000.

The resist composition is highly sensitive to actinic radiation, such as far ultraviolet rays, electron beams and X-rays, and can be developed with aqueous bases to form patterns and thus suitable for use in fine patterning techniques.

Description

Chemically Amplified Forged Resist Compositions

Since this is an open matter, no full text was included.

1 is a graph showing the GPC elution curve of the polymer obtained in Synthesis Example 4. FIG.

Claims (12)

(A) an organic solvent, (B) a base resin in the form of a polymer having a repeating unit of the following general formula (1) and having a weight average molecular weight of 3,000 to 300,000 Wherein R ¹ is a hydrogen atom or a methyl group, R ² and R ³ are different acid labile groups, and p, q and r are 0.02 p / (p + q + r) 0.5, 0.01 q / (p + q + r) 0.3, 0 (p + q) / (p + q + r) A positive number satisfying 0.8, a is a positive number of 1 to 3), and (C) a chemically amplified forged resist composition comprising a photoacid generator. The resist composition of claim 1, further comprising (D) a dissolution rate adjusting agent. The compound according to claim 2, wherein the dissolution rate controlling agent (D) is a compound having a weight average molecular weight of 100 to 1,000 and having at least two phenolic hydroxyl groups in a molecule, wherein the address atom of the phenolic hydroxyl group is 10% by an acid labile group. A resist composition, characterized in that the compound substituted in the total average ratio of 100%. The compound according to claim 2, wherein the dissolution rate adjusting agent (D) is a compound having a weight average molecular weight of more than 1,000 to 3,000 and a phenolic hydroxyl group in the molecule, wherein the hydrogen atom of the phenolic hydroxyl group is more than 0% by an acid labile group. A resist composition, which is a compound partially substituted at a total average ratio of 60%. The compound according to claim 2, wherein the dissolution rate controlling agent (D) is a compound having a weight average molecular weight of (D-1) of 100 to 1,000 and having at least two phenolic hydroxyl groups in a molecule, wherein the hydrogen atom of the phenolic hydroxyl group is a wildfire. A compound substituted with a total average ratio of 10% to 100% by a ballast group, and (D-2) a compound having a weight average molecular weight of more than 1,000 to 3,000 and having a phenolic hydroxyl group in a molecule, wherein the hydrogen atom of the phenolic hydroxyl group is A resist composition, characterized in that it is a mixture of compounds partially substituted by an acid labile group at an overall average ratio of greater than 0% to 60%. The compound according to claim 3 or 5, wherein the compound having a weight average molecular weight of 100 to 1,000 and having at least two phenolic hydroxyl groups in a molecule is at least one compound selected from compounds of the following general formulas (6) to (16): Resist composition, characterized in that. Wherein R ¹³ and R ¹³ are independently selected from the group consisting of hydrogen and linear or branched alkyl of 1 to 8 carbon atoms and alkenyl group, R ¹⁴ is hydrogen, linear or molecular alkyl of 1 to 8 carbon atoms And an alkenyl group, and (R ¹⁸ ) _s -COOH, wherein R ¹⁵ is a-(CH ₂ ) _t -group where t is 2 to 10 carbon atoms, an arylene group having 6 to 10 carbon atoms, and a carbonyl group , Sulfonyl group, oxygen atom and sulfur atom, R ¹⁶ is selected from the group consisting of alkyl group of 1 to 10 carbon atoms, arylene group of 6 to 10 carbon atoms, carbonyl group, sulfonyl group, oxygen atom and sulfur atom R ¹⁷ is selected from the group consisting of a hydrogen atom, a linear or molecular alkyl group having 1 to 8 carbon atoms, an alkenyl group, a hydroxyl-substituted phenyl, and a naphthyl group, and R ¹⁸ is a straight chain having 1 to 10 carbon atoms Or a molecular alkylene group, k is (0 ) Is an integer of 5 to 5, s is 0 or 1, and m, n, m ', n', m "and n" are m + n = 8, m so that at least one hydroxyl group is bonded to each phenyl skeleton. Is a number satisfying '+ n' = 5 and m ″ + n ″ = 4, and α is a number such that the compound of formula (13) or (14) may have a molecular weight of 100 to 1,000. The compound according to claim 4 or 5, wherein the compound having a weight average molecular weight greater than 1,000 to 3,000 and having a phenolic hydroxyl group in the molecule is at least one compound selected from compounds having a repeating unit of the following general formula (17): Resist composition to be. Where R is an acid labile, c and d are 0 c / (c + d) A number satisfying 0.6. The compound of claim 1, wherein in formula (1), R ² is Wherein R ⁴ and R ⁵ are independently selected from the group consisting of a hydrogen atom and a straight or branched alkyl group having 1 to ⁶ carbon atoms, and R ⁶ is a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms ) And R ³ is the following general formula (3) Wherein R ⁷ is a straight or branched alkyl group having 1 to 6 carbon atoms, b is 0 or 1, and selected from the group consisting of a tetrahydropyranyl group, a tetrahydrofuranyl group and a trialkylsilyl group Resist composition, characterized in that. 9. The resist composition of claim 8, wherein R ² is an alkoxyalkyl group and R ³ is a tert-butoxycarbonyl group. The resist composition according to claim 1, further comprising (E) a basic compound as an additive. The resist composition according to claim 1, wherein the base resin (B) is a monodisperse polymer having a distribution of 1.0 to 1.5. The resist composition according to claim 1, wherein the photoacid generator (C) is an onium salt. ※ Note: The disclosure is based on the initial application.