KR970022322A - Semiconductor Acceleration Detection Device - Google Patents

Semiconductor Acceleration Detection Device Download PDF

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Publication number
KR970022322A
KR970022322A KR1019950034436A KR19950034436A KR970022322A KR 970022322 A KR970022322 A KR 970022322A KR 1019950034436 A KR1019950034436 A KR 1019950034436A KR 19950034436 A KR19950034436 A KR 19950034436A KR 970022322 A KR970022322 A KR 970022322A
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KR
South Korea
Prior art keywords
substrate
piezoresistor
resistance value
adjacent
respect
Prior art date
Application number
KR1019950034436A
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Korean (ko)
Inventor
조남규
Original Assignee
정몽원
만도기계 주식회사
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Publication date
Application filed by 정몽원, 만도기계 주식회사 filed Critical 정몽원
Priority to KR1019950034436A priority Critical patent/KR970022322A/en
Publication of KR970022322A publication Critical patent/KR970022322A/en

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Abstract

본 발명은 반도체식 가속도 검출장치에 관한 것으로, 기판(10), 가속도를 힘으로 변환시키기 위한 사각형상의 질량부(30), 상기 질량부(30)의 각 모서리를 상기 기판(10)에 지지시키는 빔(20), 상기 질량부(30)측에 인접한 빔(20)의 가장자리 및 상기 기판(10)측에 인접한 빔(20)의 가장자리에 각각 형성되어 빔(20)에 작용하는 응력를 저항값으로 변환하는 압저항체(R5-R8;R9-R12)를 구비하며, 상기 질량부(30)측에 인접하게 형성되며 상호 대각선으로 대향하는 각 압저항체(R9,R12; Rl0,Rl1)를 직렬연결하여 대각선으로 대향시키며, 상기 기판(10)측에 인접하게 형성되며 상호 대각선으로 대향하는 각 압저항체(R5,R8;R6,R7)를 직렬연결하여 대각선으로 대향시켜 브릿지를 형성하도록 상기 압저항체쌍(R9,R12;Rl0,Rl1)과 연결하고 각 압저항체쌍(R9,R12;Rl0,Rl1)과 각 압저항체쌍(R5,R8;R6,R7)의 접속점에서 출력(V1,V2)을 인출하도록 하며, 상기 압저항체(R5-R12)는 인장응력에 대하여 저항값이 증가하고 압축응력에 대하여 저항값이 감소하는 압저항체인 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor acceleration detection apparatus, wherein a substrate 10, a rectangular mass portion 30 for converting acceleration into a force, and each corner of the mass portion 30 are supported on the substrate 10. The stress applied to the beam 20 formed at the edge of the beam 20 adjacent to the mass part 30 and the edge of the beam 20 adjacent to the substrate 10 side is applied to the resistance value. Piezoelectric resistors R5-R8; R9-R12 for conversion, and are formed adjacent to the mass part 30 side and connect the piezoelectric resistors R9, R12; Rl0, Rl1 that are diagonally opposite to each other in series. The piezoresistor pairs are formed to be diagonally opposed to each other, and are formed adjacent to the substrate 10 and diagonally opposed to each other in series to form a bridge by diagonally opposing the piezoresistors R5, R8; R6, and R7. R9, R12; Rl0, Rl1) and each piezoresistor pair (R9, R12; Rl0, Rl1) and each piezoresistor pair (R5, R8; R6, R7) Outputs V1 and V2 are drawn out at the connection point of the piezoelectric resistors R5-R12. The piezo resistors are characterized in that the resistance value increases with respect to the tensile stress and the resistance value decreases with respect to the compressive stress.

Description

반도체식 가속도검출장치Semiconductor Acceleration Detection Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 반도체식 가속도 검출장치의 평면도,3 is a plan view of a semiconductor acceleration detection apparatus according to the present invention,

제4도는 제3도에 도시한 반도체식 가속도 검출장치의 등가회로도.4 is an equivalent circuit diagram of the semiconductor acceleration detection device shown in FIG.

Claims (3)

기판(10), 가속도를 힘으로 변환시키기 위한 사각형상의 질량부(30), 상기 질량부(30)의 각 모서리를 상기 기판(l0)에 지지시키는 빔(20), 상기 질량부(30)측에 인접한 빔(20)의 가장자리 및 상기 기판(10)측에 인접한 빔(20)의 가장자리에 각각 형성되어 빔(20)에 작용하는 응력을 저항값으로 변환하는 압저항체(R5-R8;R9-R12)를 구비하며, 상기 질량부(30)측에 인접하게 형성되며 상호 대각선으로 대향하는 각 압저항체(R9,R12;Rl0,Rl1)를 직렬연결하여 대각선으로 대향시키며, 상기 기판(10)측에 인접하게 형성되며 상호 대각선으로 대향하는 각 압저항체(R5,R8;R6,R7)를 직렬연결하여 대각선으로 대향시켜 브릿지를 형성하도록 상기 압저항체쌍(R9,R12;Rl0,Rl1)과 연결하고 각 압저항체쌍(R9,R12;Rl0,Rl1)과 각 압저항체쌍(R5,R8;R6,R7)의 접속점에서 출력(V1,V2)을 인출하도록 한 반도체식 가속도 검출장치.The substrate 10, the mass portion 30 for converting the acceleration into force, the beam 20 for supporting each edge of the mass portion 30 to the substrate 10, the mass portion 30 side Piezores (R5-R8; R9-) formed at edges of the beam 20 adjacent to the edge of the beam 20 adjacent to the substrate 10 and converting the stress acting on the beam 20 into resistance values. R12), which are formed adjacent to the mass part 30 side and diagonally oppose each piezo resistor R9, R12; Rl0, Rl1 in series to face each other diagonally, and face the substrate 10 side. Are formed adjacent to the piezoelectric resistors (R5, R8; R6, R7) diagonally opposite to each other in series to connect with the piezoelectric resistor pairs (R9, R12; Rl0, Rl1) to form diagonal bridges. A semiconductor type in which outputs V1 and V2 are drawn out at the connection point of each piezoresistor pair R9, R12; Rl0, Rl1 and each piezo resistor pair R5, R8; R6, R7. Speed detecting device. 제1항에 있어서, 상기 압저항체(R5-R12)는 인장용력에 대하여 저항값이 증가하며 압축응력에 대하여 저항값이 감소하는 압저항체인 것을 특징으로 하는 반도체식 가속도 검출장치.The semiconductor acceleration detection apparatus according to claim 1, wherein the piezoresistor (R5-R12) is a piezoresistor whose resistance value increases with respect to tensile strength and whose resistance value decreases with respect to compressive stress. 제1항에 있어서, 상기 압저항체(R5-R12)는 인장용력에 대하여 저항값이 감소하며 압축응력에 대하여 저항값이 증가하는 압저항체인 것을 특징으로 하는 반도체식 가속도 검출장치.The semiconductor acceleration detection device according to claim 1, wherein the piezoresistor (R5-R12) is a piezoresistor whose resistance value decreases with respect to tensile force and the resistance value increases with respect to compressive stress. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950034436A 1995-10-07 1995-10-07 Semiconductor Acceleration Detection Device KR970022322A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950034436A KR970022322A (en) 1995-10-07 1995-10-07 Semiconductor Acceleration Detection Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034436A KR970022322A (en) 1995-10-07 1995-10-07 Semiconductor Acceleration Detection Device

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KR970022322A true KR970022322A (en) 1997-05-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160120242A (en) 2015-04-07 2016-10-17 주식회사 씨에스파마 Chocolate and candy containing extract of garcinia cambogia and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160120242A (en) 2015-04-07 2016-10-17 주식회사 씨에스파마 Chocolate and candy containing extract of garcinia cambogia and manufacturing method thereof

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