KR970017759A - Fuse stage selection circuit of semiconductor device - Google Patents

Fuse stage selection circuit of semiconductor device Download PDF

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Publication number
KR970017759A
KR970017759A KR1019950030034A KR19950030034A KR970017759A KR 970017759 A KR970017759 A KR 970017759A KR 1019950030034 A KR1019950030034 A KR 1019950030034A KR 19950030034 A KR19950030034 A KR 19950030034A KR 970017759 A KR970017759 A KR 970017759A
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KR
South Korea
Prior art keywords
selection circuit
fuse
node
mode selection
semiconductor device
Prior art date
Application number
KR1019950030034A
Other languages
Korean (ko)
Inventor
이철우
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950030034A priority Critical patent/KR970017759A/en
Publication of KR970017759A publication Critical patent/KR970017759A/en

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  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

본 발명은 반도체 장치의 퓨즈용단 선택회로에 관한 것으로서, 특히 모드선택회로부와 확인회로부를 구비한 반도체 장치의 퓨즈용단 선택회로에 있어서, 확인회로부는 대응하는 외부신호가 인가되는 패드와 노드C 사이에 연결된 다이오드; 모드선택회로부의 모드선택신호가 게이트에 인가되고 드레인이 노드C에 연결되고 소오스가 접지된 트랜지스터를 구비한 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fuse short selection circuit of a semiconductor device, and more particularly to a fuse short selection circuit of a semiconductor device having a mode selection circuit section and a verification circuit section, wherein the verification circuit section is provided between a pad and a node C to which a corresponding external signal is applied. Connected diodes; And a transistor in which the mode selection signal of the mode selection circuit unit is applied to the gate, the drain is connected to the node C, and the source is grounded.

따라서, 본 발명에서는 웨이퍼 및 패키지 레벨에서 퓨즈용단이 가능하고 회로구성의 간략화로 면적을 줄일 수 있다Therefore, in the present invention, fuse blown at the wafer and package level is possible, and the area can be reduced by simplifying the circuit configuration.

Description

반도체 장치의 퓨즈용단 선택회로Fuse stage selection circuit of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 퓨즈용단 선택회로의 구성을 나타낸 회로도.2 is a circuit diagram showing the configuration of a fuse selection circuit for fuses according to the present invention;

Claims (2)

모드선택회로부와 확인회로부를 구비한 반도체 장치의 퓨즈용단 선택회로에 있어서, 상기 확인회로부는 대응하는 외부신호가 인가되는 패드와 노드C 사이에 연결된 다이오드; 및 상기 모드선택회로부의 모드선택신호가 게이트에 인가되고 드레인이 상기 노드C에 연결되고 소오스가 접지된 트랜지스터를 구비한 것을 특징으로 하는 반도체 장치의 퓨즈용단 선택회로.A fuse selection circuit for a semiconductor device having a mode selection circuit portion and a confirmation circuit portion, the identification circuit portion comprising: a diode connected between a pad and a node C to which a corresponding external signal is applied; And a transistor having a mode selection signal of the mode selection circuit section applied to a gate, a drain connected to the node C, and a source grounded. 제1항에 있어서, 상기 모드선택회로부는 상기 패드에 인가되는 외부신호와 퓨즈용단모드신호를 입력하여 퓨즈용단 제어신호를 발생하는 입력수단; 내부전원전압과 노드B사이에 연결된 퓨즈; 상기 노드B와 접지 사이에 드레인 및 소오스가 연결되고 게이트에 상기 퓨즈용단 제어신호가 인가되는 트랜지스터; 및 상기 노드B의 상태에 따라 모드선택신호를 발생하는 출력수단을 구비하는 것을 특징으로 하는 반도체 장치의 퓨즈용단 선택회로.The electronic device of claim 1, wherein the mode selection circuit unit comprises: input means for inputting an external signal applied to the pad and a fuse short mode signal to generate a fuse control signal; A fuse connected between the internal power supply voltage and the node B; A transistor having a drain and a source connected between the node B and the ground, and a fuse control signal applied to a gate; And an output means for generating a mode selection signal in accordance with the state of the node B. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950030034A 1995-09-14 1995-09-14 Fuse stage selection circuit of semiconductor device KR970017759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950030034A KR970017759A (en) 1995-09-14 1995-09-14 Fuse stage selection circuit of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950030034A KR970017759A (en) 1995-09-14 1995-09-14 Fuse stage selection circuit of semiconductor device

Publications (1)

Publication Number Publication Date
KR970017759A true KR970017759A (en) 1997-04-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950030034A KR970017759A (en) 1995-09-14 1995-09-14 Fuse stage selection circuit of semiconductor device

Country Status (1)

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KR (1) KR970017759A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100458884B1 (en) * 2000-12-27 2004-12-03 가부시끼가이샤 도시바 Fuse circuit
KR100471139B1 (en) * 1997-11-18 2005-06-07 삼성전자주식회사 Semiconductor memory device having mode setting circuit
KR100761399B1 (en) * 2000-12-30 2007-09-27 주식회사 하이닉스반도체 Redundancy circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471139B1 (en) * 1997-11-18 2005-06-07 삼성전자주식회사 Semiconductor memory device having mode setting circuit
KR100458884B1 (en) * 2000-12-27 2004-12-03 가부시끼가이샤 도시바 Fuse circuit
KR100761399B1 (en) * 2000-12-30 2007-09-27 주식회사 하이닉스반도체 Redundancy circuit

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