KR970006739B1 - Resonant tunneling transistor & method for manufacturing - Google Patents
Resonant tunneling transistor & method for manufacturing Download PDFInfo
- Publication number
- KR970006739B1 KR970006739B1 KR93010150A KR930010150A KR970006739B1 KR 970006739 B1 KR970006739 B1 KR 970006739B1 KR 93010150 A KR93010150 A KR 93010150A KR 930010150 A KR930010150 A KR 930010150A KR 970006739 B1 KR970006739 B1 KR 970006739B1
- Authority
- KR
- South Korea
- Prior art keywords
- conductive layer
- resonant tunneling
- layer
- manufacturing
- tunneling transistor
- Prior art date
Links
- 230000005641 tunneling Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
Abstract
A resonant tunneling device which can enable a switching action is disclosed. The resonant tunneling transistor coupled with capacitor comprises: a first conductive layer(6) formed in a silicon substrate(7); a first insulating layer(5) formed on the first conductive layer(6); a second conductive layer(3) formed on the first insulating layer(5); a second insulating layer(4) formed on the second conductive layer(3); a third conductive layer(1) and a fourth conductive layer(2) spaced apart from each other; a fourth insulating layer(4') formed on the third and fourth conductive layers(1,2); and a drain electrode(8), a source electrode(9) and a gate electrode(10) connected to the first conductive layer(6), the third conductive layer(1) and the fourth conductive layer(2), respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93010150A KR970006739B1 (en) | 1993-06-05 | 1993-06-05 | Resonant tunneling transistor & method for manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR93010150A KR970006739B1 (en) | 1993-06-05 | 1993-06-05 | Resonant tunneling transistor & method for manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950002060A KR950002060A (en) | 1995-01-04 |
| KR970006739B1 true KR970006739B1 (en) | 1997-04-29 |
Family
ID=19356847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR93010150A KR970006739B1 (en) | 1993-06-05 | 1993-06-05 | Resonant tunneling transistor & method for manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970006739B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190027652A (en) * | 2017-09-07 | 2019-03-15 | 재단법인대구경북과학기술원 | Tunneling Transistor and manufacturing the same |
-
1993
- 1993-06-05 KR KR93010150A patent/KR970006739B1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190027652A (en) * | 2017-09-07 | 2019-03-15 | 재단법인대구경북과학기술원 | Tunneling Transistor and manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR950002060A (en) | 1995-01-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050721 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |