KR970003802A - Field oxide film formation method of semiconductor device - Google Patents
Field oxide film formation method of semiconductor device Download PDFInfo
- Publication number
- KR970003802A KR970003802A KR1019950017298A KR19950017298A KR970003802A KR 970003802 A KR970003802 A KR 970003802A KR 1019950017298 A KR1019950017298 A KR 1019950017298A KR 19950017298 A KR19950017298 A KR 19950017298A KR 970003802 A KR970003802 A KR 970003802A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- oxide film
- field oxide
- forming
- semiconductor device
- Prior art date
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- Local Oxidation Of Silicon (AREA)
Abstract
본 발명은 반도체 소자의 필드산화막 형성방법에 관한 것으로, 필드산화막 (Field Oxide) 성장시 사용되는 버퍼드 폴리실리콘막을 비정질실리콘막으로 형성한 후 열처리 공정을 통해 그레인(grain) 사이즈가 큰 폴리실리콘막으로 형성하므로써 소자분리특성을 향상시킬 수 있도록 한 반도체 소자의 필드산화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a field oxide film of a semiconductor device, wherein a polysilicon film having a large grain size is formed through an annealing process after forming a buffered polysilicon film used for growing a field oxide film. The present invention relates to a method for forming a field oxide film of a semiconductor device in which the device isolation characteristics can be improved by forming the same.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A 내지 제2C도는 본 발명에 따른 반도체 소자의 필드산화막 형성방법을 설명하기 위한 소자의 단면도.2A to 2C are cross-sectional views of a device for explaining a method of forming a field oxide film of a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017298A KR970003802A (en) | 1995-06-24 | 1995-06-24 | Field oxide film formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017298A KR970003802A (en) | 1995-06-24 | 1995-06-24 | Field oxide film formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970003802A true KR970003802A (en) | 1997-01-29 |
Family
ID=66524207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950017298A KR970003802A (en) | 1995-06-24 | 1995-06-24 | Field oxide film formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970003802A (en) |
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1995
- 1995-06-24 KR KR1019950017298A patent/KR970003802A/en not_active Application Discontinuation
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