KR970003802A - Field oxide film formation method of semiconductor device - Google Patents

Field oxide film formation method of semiconductor device Download PDF

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Publication number
KR970003802A
KR970003802A KR1019950017298A KR19950017298A KR970003802A KR 970003802 A KR970003802 A KR 970003802A KR 1019950017298 A KR1019950017298 A KR 1019950017298A KR 19950017298 A KR19950017298 A KR 19950017298A KR 970003802 A KR970003802 A KR 970003802A
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KR
South Korea
Prior art keywords
film
oxide film
field oxide
forming
semiconductor device
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Application number
KR1019950017298A
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Korean (ko)
Inventor
한일근
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950017298A priority Critical patent/KR970003802A/en
Publication of KR970003802A publication Critical patent/KR970003802A/en

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Abstract

본 발명은 반도체 소자의 필드산화막 형성방법에 관한 것으로, 필드산화막 (Field Oxide) 성장시 사용되는 버퍼드 폴리실리콘막을 비정질실리콘막으로 형성한 후 열처리 공정을 통해 그레인(grain) 사이즈가 큰 폴리실리콘막으로 형성하므로써 소자분리특성을 향상시킬 수 있도록 한 반도체 소자의 필드산화막 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a field oxide film of a semiconductor device, wherein a polysilicon film having a large grain size is formed through an annealing process after forming a buffered polysilicon film used for growing a field oxide film. The present invention relates to a method for forming a field oxide film of a semiconductor device in which the device isolation characteristics can be improved by forming the same.

Description

반도체 소자의 필드산화막 형성방법Field oxide film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A 내지 제2C도는 본 발명에 따른 반도체 소자의 필드산화막 형성방법을 설명하기 위한 소자의 단면도.2A to 2C are cross-sectional views of a device for explaining a method of forming a field oxide film of a semiconductor device according to the present invention.

Claims (3)

반도체 소자의 필드산화막 형성방법에 있어서, 실리콘기판상에 패드 산화막, 비정질실리콘막 및 질화막을 순차적으로 형성시하는 단계와, 상기 질화막상에 필드영역이 확정되도록 감광막 패턴을 형성하는 단계와, 상기 감광막패턴을 식각마스크로 이용하여 상기 질화막을 식각한 후 상기 감광막패턴을 제거시키고 산화공정을 진행하여 상기 필드영역에 필드 산화막을 성정시키는 단계와, 상기 질화막, 비정질실리콘막 및 상기 패드 산화막을 순차적으로 제거하여 표면 평탄화를 이룬 필드 산화막을 형성하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 필드산화막 형성방법.A method of forming a field oxide film of a semiconductor device, the method comprising: sequentially forming a pad oxide film, an amorphous silicon film, and a nitride film on a silicon substrate; forming a photoresist pattern on the nitride film so as to determine a field region; Etching the nitride film using a pattern as an etch mask, removing the photoresist pattern, and performing an oxidation process to form a field oxide film in the field region, and sequentially removing the nitride film, the amorphous silicon film, and the pad oxide film. Forming a field oxide film having the surface planarized thereon. 제1항에 있어서, 상기 비정질실리콘막을 열처리 공정을 통해 그레인 사이즈가 큰 폴리실리콘막으로 형성되도록 하는 것을 특징으로 하는 반도체 소자의 필드산화막 형성방법.The method of claim 1, wherein the amorphous silicon film is formed into a polysilicon film having a large grain size through a heat treatment process. 제1항에 있어서, 상기 패드 산화막 식각공정시 상기 필드 산화막의 표면 평탄화와 활성영역의 크기를 증대시키기 위하여 과도식각하는 것을 특징으로 하는 반도체 소자의 필드산화막 형성방법.The method of claim 1, wherein in the pad oxide layer etching process, overetching is performed to increase the surface planarization of the field oxide layer and increase the size of the active region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950017298A 1995-06-24 1995-06-24 Field oxide film formation method of semiconductor device KR970003802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950017298A KR970003802A (en) 1995-06-24 1995-06-24 Field oxide film formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017298A KR970003802A (en) 1995-06-24 1995-06-24 Field oxide film formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970003802A true KR970003802A (en) 1997-01-29

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KR1019950017298A KR970003802A (en) 1995-06-24 1995-06-24 Field oxide film formation method of semiconductor device

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KR (1) KR970003802A (en)

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