KR970003502B1 - Laser vpe method and apparatus thereof - Google Patents

Abstract

The present invention is about laser-assisted vapor phase epitaxy method and apparatus thereof which can reduce crystal knitting depending on lattice discordance and coefficient of thermal expansion among nitride compound by coating grown on board of heterologous material.Laser-assisted vapor phase epitaxy method and it's apparatus comprise vacuum bath and laser light feed apparatus generating laser light; laser light induction device inducing laser light to vacuum bath; reaction gas feed device inflowing reaction material to the inside of vacuum bath and vacuum maintenance device maintaining vacuum state of the inside of vacuum bath.

Description

Laser VPE Method and Its Devices

1 is a schematic cross-sectional view showing a laser-assisted vapor phase epitaxy (VPE) device according to the present invention,

2 is a side view showing in detail the vacuum chamber portion in the laser VPE apparatus according to FIG.

3 is a scanning electron micrograph of a gallium nitride single crystal thin product manufactured by the laser VPE method of the present invention,

FIG. 4 is a diffraction photograph of RHEED (replection high energy electron diffraction) of a gallium nitride single crystal thin film manufactured by the laser VPE method of the present invention.

* Description of the symbols for the main parts of the drawings *

1: vacuum chamber 2: laser light supply device

3: laser light guide means 4: reactor body supply means

5: vacuum holding means 6: substrate

7: laser light 8: closed tube

9: laser reflector 10: aperture

11 lens 12 attenuator

13: brewster window 14: nitrogen gas supply means

15: resistance heater 16: copper rod

17: screw 18: K type thermocouple

19: mass flow regulator 20: gas cylinder

21 gas valve 22 beam stopper

23 turbo pump 24 gate valve

25: quadrupole mass spectrometer

The present invention relates to a laser laser-assisted vapor phase epitaxy (VPE) method and apparatus for coating a nitride compound on a surface of a double object, and more particularly, to a nitride (N) compound of another type. By coating the image with wavelength-resonant laser light energy, the nitride compound can be grown at a relatively lower temperature by a hetero-epitaxy method based on photochemical reaction to grow the coating without defect structure. A new laser VPE method that can be used, and a laser VPE device configured to use this VPE method.

Conventionally, a halide vapor phase expitaxy (VPE) method has been mainly used as a method for preparing heteroepitaxy for coating growth of a nitride compound on a substrate of a dissimilar material. This method is described in H.P. Maruska and J.J. Developed by Tietjen, Applied physics letter, Vol. 15 (1969), P. 327], lattice mismatch between substrates of dissimilar materials and nitride-grown nitride compounds due to coating growth of heteroepitaxial nitride compounds at temperatures as high as 1100 ° C. And crystal defects due to thermal expansion aberration are mixed and have a non-stoichiometric defect structure due to mitrogen vacanay.

In addition, MOCVD (metalorganic chemical vapor deposition) has been developed [H. M. Manasevit et al; Journal of electrochemical society Vol. 118 (1971) P. 1864], this method also has the same problem as the above-mentioned halide VPE method because the epitaxially grown nitride compound is coated and grown at a high temperature around 1000 占 폚.

Recently, the molecular beam epitaxy method, RF-excited plasma method, DC-biased reaction sputtering method for coating growth of heteroepitaxial nitride compound at low temperature ), And electron cyclotron resonance plasma (Electron cyclotron resonance plasma) method, etc. are used, but since these methods are non-selective energy, the nitrogen in the ionic state is easily released and the nitide compound is heteroepiated on the substrate. There is a problem that it is difficult to grow the coat in a dark manner.

Therefore, in order to solve the problems in the conventional method of coating a heteroepitaxial nitride compound as described above, by growing and coating the heteroepitaxial nitride compound using laser light energy at low temperature. It is an object of the present invention to provide a laser VPE method and apparatus for reducing crystalline defects due to lattice mismatch and thermal expansion coefficient difference between a substrate of a heterogeneous material and a nitride compound coated on the substrate.

Hereinafter, the present invention will be described in detail.

According to the present invention, a nitride compound is coated and grown in a thin film on a substrate made of a heterogeneous material, which is heteroepitaxially irradiated, but irradiated with laser light on a substrate in a vacuum chamber, and a wavelength resonance photochemical with a photoreactive raw material introduced into the vacuum chamber. The laser VPE method of coating and growing the heteroepitaxial nitride compound by reaction and photothermal reaction on a board | substrate is characterized by the above-mentioned.

In addition, the present invention provides a device for coating a nitride compound on a substrate made of a heterogeneous material heteroepitaxially with a thin film, comprising: a vacuum chamber, a light supply device for outputting laser light, and a light for guiding the laser light to the vacuum chamber And a laser VPE apparatus comprising: an induction means, a reactor body supply means for introducing a reaction raw material into the vacuum chamber, and a vacuum holding means for maintaining a vacuum state in the vacuum chamber.

Referring to the present invention in more detail as follows.

The laser VPE method according to the present invention advantageously provides the growth conditions of the coating by supplying an excessively excited nitrogen element on the substrate by using laser light energy based on the wavelength resonance photochemical reaction. Since the problem of mismatch defect structure can be reduced, the heteroepitaxial nitride compound can be grown at a lower temperature than any other coating growth technology invented so far.

The laser VPE method of the present invention looks at the basic mechanism in which the solid surface is activated by the laser light thermal reaction on the substrate surface along with the vapor phase photolysis reaction of the reactant. The chemical bonds in the photocatalytic reaction result in the formation of highly reactive photodegradable species or atoms. Subsequently, when the laser beam is irradiated onto the substrate, a photodecomposition species or atoms are deposited on the surface of the substrate activated by the photothermal reaction, thereby coating the heteroepitaxial nitride compound.

In particular, the laser VPE method of the present invention is capable of coating growth at a deposition temperature of 530 ℃ to 800 ℃, which is lower than about 400 ℃ compared to the conventional method because the use of the selected laser light to the specific reaction material This is because it induces wavelength resonance photochemical reaction. However, there is a problem in the activation of the substrate at a temperature lower than 530 ℃, the crystal is destroyed by excessive energy supply at a temperature higher than 800 ℃.

In order to explain the laser VPE method according to the present invention, the laser VPE method will be described as an embodiment with the configuration of the laser VPE device shown in FIGS.

The laser light used in the laser VPE method is guided into the vacuum chamber and irradiated onto the substrate located inside the vacuum chamber. In this case, the incoming photoreaction material causes a gas phase photolysis reaction and a laser light thermal reaction also occurs on the substrate to increase the coating growth. The solid surface of the substrate is activated to improve the conditions. In this process, the reaction process between the reactant gas and the product gas is controlled by mass spectrometry means such as a quadrupole mass analyzer.

Due to the characteristics of the present invention, since the compound coating growth of the nitride compound is performed using laser light, a vacuum brewster window is attached to allow the laser light to flow into the vacuum bath and remain after the reaction. In order to dissipate the laser light, a beam stopper is installed and used.

In addition, in the present invention, because the light of the short wavelength of the vacuum ultraviolet or ultraviolet ray region is used, it reacts with oxygen molecules in the atmosphere and causes loss of laser energy. By installing a material pipe and filling the inner space with nitrogen gas, laser light is introduced into the vacuum chamber without losing energy. In this case, the acrylic protective tube absorbs light of a short wavelength in the ultraviolet or ultraviolet region, which is very harmful to the human body, and also serves as a safety device.

The laser light source used in the present invention oscillates light having a short wavelength in the ultraviolet or ultraviolet region from 193 nm to 351 nm with high energy having an average output of 0.5 to 50 W, and can continuously supply a pulse duration of 30 to 50 mJ / cycle. It must consist of a laser. As an example, a pulsed excimer laser is suitable, and in addition, an argon ion laser, a yag laser, a carbon dioxide laser and the like can be used. At this time, the size of the laser beam is about 10 × 20 (mm × mm) adjustable to a suitable size and intensity.

In addition, the intensity of the light irradiated from the laser light source is introduced into the vacuum chamber at a suitable intensity by a laser reflector, an aperture, a lens capable of focusing or dispersing the light, and an attenuator. The intensity is preferably 30 to 300 mJ and 10 to 50 Hz. If the intensity of the light is greater than 300mJ and 50Hz, the crystal structure becomes rough. If the light intensity is less than 30mJ and 10Hz, the gas phase photolysis reaction and the activation of the solid surface are insufficient, resulting in poor coating growth.

The laser light, once introduced into the vacuum chamber, is adjusted to be incident at an oblique or vertical angle toward a substrate placed on a small crucible type resistive type heater made of tantalum (Ta) metal foil. The impinging reactants excite, while activating the surface of the irradiated substrate, which can induce heterogeneous coating growth of the nitride compound even at relatively low temperatures.

On the other hand, the reaction raw materials are introduced at a constant speed toward the substrate located in the center of the vacuum chamber in a gaseous state, wherein the gas flow rate (speed) of the metal source is 0.04 ~ 0.4sccm The nitrogen source is introduced at a rate of 40-400 sccm.

In addition, nitrogen is introduced at a rate of about 20 sccm to prevent the formation of coatings on the burster window.

In this case, as the photoreactive raw material, a metal source selected from organometallic compounds such as trimethylgallium or triethylgallium and a nitrogen source capable of forming a heteroepitaxial nitride compound by ammonia or laser photolysis may be used.

Such gas inflow rate is determined in consideration of the kinetic correlation in the photolysis reaction by the laser. If the gas inflow rate is out of the above range, coating growth may not be balanced and lattice mismatch may occur between the substrate and the substrate. .

As such, in the present invention, in order to apply the laser VPE method and technology to coat and grow the nitride compound in a thin film on the substrate surface of energy heteroepitaxially, it is important to closely examine the thermal decomposition reaction of the reaction materials and the photolysis reaction by laser. Do.

Therefore, in order to elucidate such reaction mechanism, the present invention is carried out a kinetic study on the thermal decomposition of ammonia, trimethyl gallium, trimethyl aluminum in situ Fourier transform infrared spectroscopy (in- situ FT-IR Spectroscopy). Here it was carried out using a cold wall type closed reaction vessel.

In the reaction vessel, the reaction materials react immediately to form trimethylaluminum-ammonia adduct (TMA-NH ₃ adduct) and trimethylgallium-ammonia adduct (TMG-NH ₃ adduct). Also investigated.

As a result, it was found that the ammonia nitrogen-hydrogen (N-H) bond was broken at about 900 ° C. It was observed that trimethylgallium, trimethylaluminum, and other additives completely decomposed at around 500 ° C. However, according to the method for preparing a heteroepitaxial nitride compound thin film invented according to the present invention, the heteroepitaxial nitride compound thin film is not well formed at a temperature of 900 ° C. or lower, and even at a temperature of 1,000 ° C. or higher, It is known that crystals of heteroepitaxy nitride compounds of wurtzite type) are not easily grown.

Therefore, for the purpose of preparing a thin film of heteroepitaxial nitride compound at low temperature, it is necessary to investigate the phenomena of various pyrolysis reactions that may be involved in the growth of the thin film of heteroepitaxial nitride compound. The analysis was attempted in-situ using a quadrupole mass spectrometer.

Trimethylaluminum is decomposed by hot electrons emitted from tungsten filament in a quadrupole mass spectrometer. The decomposition forms at room temperature include aluminum (mass number: 27), monomethylaluminum (mass number: 42) and dimethylaluminum ( Mass number: 57) showed a characteristic peak due to the presence of ions. Increasing the temperature of the heater in the vacuum chamber to 300 DEG C tended to gradually decrease these three characteristic peak intensities due to the decomposition of trimethylaluminum. On the other hand, when the temperature reaches 600 ° C, characteristic peaks due to the presence of aluminum, monomethylaluminum and dimethylaluminum ions disappear completely.

The pyrolyzed form of trimethylgallium is also observed similarly to trimethylaluminum. The pyrolytic form of trimethylgallium can be accurately analyzed by the presence of gallium isotope and the natural abundance ratio of gallium isotope, which means that gallium isotopes of mass 69 and 71 Due to the presence of a natural substance of gallium at 60:40 and gallium-containing mass spectrum, the peaks of gallium-containing mass spectrum always coexist in the ratio of 60:40 with two peaks having a mass difference of 2 Because it is. For example, the peak of dimethylgallium (Ga (CH ₃ ) ₂ ) is present at the positions of mass numbers 99 and 101 with relative peak intensity ratios of 60% and 40%, respectively. Methylgallium (Ga (CH ₃ )) shows the same peak at 84 and 86, respectively. On the other hand, ammonia is thermally decomposed at a temperature of 900 ° C. or higher, which can be seen from the phenomenon in which the intensity of hydrogen peak generated by pyrolysis at 900 ° C. or higher increases significantly.

From the results of the above pyrolysis reactions, it was observed that the reactants were thermally decomposed by thermal energy, but at this pyrolysis temperature, the chemical deposition on the substrate was not performed well. In order to improve these results, by introducing laser light energy, a method for preparing a heteroepitaxial compound of a nitride compound at a temperature of about 400 ° C. lower than the thermal decomposition temperature of ammonia has been invented.

In addition, when the laser light is irradiated, it can be seen that trimethylgallium and trimethylaluminum molecules are easily decomposed as shown in the thermal decomposition. Moreover, it is noteworthy that the ammonia molecules decompose a considerable amount even at room temperature. This is by intermittently splitting the laser light with ammonia in the reactor, so that the mass spectrum of N, NH, NH ₂ ions formed as the ammonia molecules are split by light energy is in situ using a quadrupole mass spectrometer. Observed during tracking and analysis.

Thus, the relative amount of decomposed ions when irradiated with and without laser light is compared as shown in Table 1 below. Here, the increase rate of N ions is about 14%, which is a significant increase over other ions (NH = 9%, NH ₂ = 2%, NH ₃ ≤ 1%). This suggests that a considerable amount of N and NH ions are generated by photolysis, and these photolysates have sufficient reactivity to bond with lattice sites on the substrate surface.

TABLE 1

In addition, these processes excited by the laser light not only accelerate the reaction with the substrate surface activated by the laser light but also reduce the problem of crystal defects caused by nitrogen vacancy in particular. From this series of processes, it can be seen that the coating growth of heteroepitaxial nitride compounds can be made possible by the use of laser light energy, which allows wavelength resonance photochemical reactions to occur even at relatively low temperatures of 530 ° C. have.

On the other hand, according to the laser VPE method of the present invention, the laser photothermal reaction occurs on the surface by the laser light in the vacuum chamber and the surface is activated to maintain the temperature of 530 ~ 800 ℃ as described above, wherein the reaction in the vacuum Maintaining the pressure at 0.5-10torr and reacting for 10-60 minutes is the best condition for coating growth of the heteroepitaxial nitride thin film on the substrate.

An apparatus for practically applying such a laser VPE method according to the present invention is shown as an example in FIGS. 1 and 2. The laser VPE device of the present invention shown in the accompanying drawings can be modified within the scope to which the method of the present invention can be applied as one embodiment.

As shown in FIG. 1, the laser VPE apparatus of the present invention comprises a vacuum chamber 1, a laser light supply device 2, a laser light guide means 3, a reactor body supply means 4, and a vacuum tank holding means ( 5) etc. Five parts are organically connected so that the nitrate compound can be grown into a heteroepitaxial coating from the reaction material by using the laser light 7 on the substrate 6 located inside the vacuum chamber 1. It is a device configured to be.

In FIG. 1, the laser light 7 oscillated by the laser light supply means 1 passes through a closed tube 8 made of acrylic material, which forms the outer portion of the laser light guide means 3, without a loss of energy. 1) It is configured to flow inside. The closed tube 8 constituting the outside of the laser light guide means (3) is made of an acrylic material that can absorb light of a short wavelength in the vacuum ultraviolet or ultraviolet region in consideration of safety, the interior space is nitrogen gas Filling prevents energy loss. At this time, the inside of the closed tube 8 of the laser reflector 9 for adjusting the irradiation path of the laser light 7, the aperture 10, the lens 11 and the laser light 7 for connecting or dispersing light The attenuator 12 which controls an irradiation amount is arranged in order, and the laser light guide means 3 which guides the laser beam 7 to the vacuum chamber 1 with the said sealing tube 2 is comprised.

Therefore, the laser light 7 oscillated from the laser light supply device 2 controls the amount of light incident on the vacuum chamber 1 while passing through the laser light inducing means 3 and adjusts the laser light to an intensity suitable for the reaction. (7) can be introduced into the vacuum chamber (1).

According to the present invention, the vacuum chamber (1) is sealed tightly so that a high vacuum state can be maintained, and a quartz booster window (13) is attached to a portion into which the laser light (7) flows. In addition, in order to prevent the nitride compound from being deposited on the booster window 13 during the deposition reaction by the laser light 7, the nitrogen gas flowing from the position inside the vacuum chamber 1 toward the booster window 13 is carried out. The supply means 14 was installed.

As shown in FIG. 2, the laser light 7 introduced into the vacuum chamber 1 through the above-described booster window 13 is transferred to the tantalum (Ta) metal foil at the central position of the vacuum chamber 1. The laser beam 7 is excited to adjust the incident light at an oblique or vertical angle towards the substrate 6 placed on a small crucible-type resistive heater 15, which is made, and to collide with the laser photons. By activating the surface of the irradiated substrate 6, heteroepitaxial coating growth of the nitride compound can be induced at low temperature.

In addition, the tantalum (Ta) metal foil resistance heater 15 located in the center of the vacuum chamber 1 is fixed to the copper rod 16 for power supply with a screw 17, and the coating growth temperature of the nitride compound is measured. To this end, a K-type alumel-chromel thermocouple 18 is connected to the bottom of the tantalum (Ta) metal foil resistance heater 15.

Meanwhile, the reactant raw materials of the metal source and the nitrogen source forming the coating on the substrate 6 while causing the wavelength resonance photochemical reaction by the laser light 7 flowing into the vacuum chamber 1 are supplied to the reactor body supply means 4. It is supplied toward the substrate 6 located at the center of the inside of the vacuum chamber 1, and the outer diameter of each of them is introduced into the vacuum chamber 1 through a 1/8 inch electro polished stainless steel tube. It is introduced and fed from the Tee union. The mixed raw material is then injected into the vacuum chamber 1 toward the substrate 6 through the spirally immersed tube. At this time, the position of the reactant raw material is adjusted so as to be excited by the laser light 7 as it flows into the vacuum chamber 1. In the present invention, the injection speed of the reactors is controlled by a mass flow controller 19 to maintain a constant speed for each type of reactor from each gas cylinder 20. Reactors of a constant flow rate flows into the vacuum chamber 1 through the gas valve 21.

In addition, the laser light 7 remaining after the coating growth on the substrate 6 by reacting with the reactant is blocked by a beam stopper 22 disposed on the opposite side of the booster window 13. Be sure to

The vacuum holding means 5 for maintaining a constant vacuum state inside the vacuum chamber 1, preferably about 10 ^-6 torr, is vacuum measuring equipment (not shown) and diffusion. A quadrupole mass spectrometer that analyzes the reaction process of the reactor gas and the gas produced by the vacuum exhaust system consisting of a pump and a rotary pump (not shown), a turbo pump 23, a gate valve 24 and a bypass valve (not shown). By installing a mass spectrometer consisting of (25) so that a constant vacuum state is always maintained according to the reaction state analyzed by the mass spectrometer (15).

For example, a nitride compound is coated and grown on a substrate by performing the laser VPE method according to the present invention from the laser VPE device implemented as described above.

Example

In the present invention, it is very important to select a reactant whose coating growth is promoted by laser light as the reaction raw material. Therefore, trimethyl gallium was used as a metal source and ammonia was used as a nitrogen source.

In addition, the substrate 6 is chemically etched (0001) sapphire first with two or more concentrated acid mixtures at 150-200 ° C., and then thoroughly cleaned with tertiary distilled water and an organic solvent using an ultrasonic vibratior. After washing and drying, the washed substrate was once again surface treated at a high temperature of 1200 ° C. or higher before the laser VPE reaction.

Laser VPE reaction was carried out by the following method. After placing the substrate 6 on the metal foil heater 15 located in the center of the vacuum chamber 1, the vacuum chamber 1 was sealed tightly so that a high vacuum could be maintained. When the vacuum chamber holding means 5 is operated and the vacuum in the vacuum chamber 1 reaches about 5 × 10 ⁻⁴ Nm ⁻² , the temperature of the metal flake heater 15 is increased at a temperature of 1000 ° C. or higher for a certain time. The substrate 6 was activated while continuously flowing a small amount of hydrogen gas through (4).

Finally, the internal pressure of the vacuum chamber ¹ was lowered to 2 × 10 ⁻⁴ Nm ⁻² and the deposition reaction was started. The temperature of the substrate 6 was lowered to 530-800 ° C., which is the deposition temperature of the gallium nitride (GaN) thin film layer, and then stabilized for 10 minutes. Ammonia and trimethyl gallium are 40 to 400 sccm and 0.04 to 0.4 sccm, which are optimum flow rates for stoichiometric deposition, respectively, from the gas cylinder 20 to the mass flow regulator 19 and the gas valve 21. It flowed into the vacuum chamber 1 through. During the reaction, the total pressure inside the vacuum chamber was constantly kept constant in the range of 3 × 10 ¹ to 3 × 10 ³ Nm ^-2 .

The thin film was grown for a period of time within 1 hour while irradiating vertically or obliquely with a plate-shaped laser light energy having a 20-30 ns pulse duration of 193-351 nm wavelength at an intensity of 30-300 mJ and 10-50 Hz. After the reaction was completed, the flow of the reactants and the laser light energy was stopped.

The gallium nitride monocrystalline thin film prepared from the laser VPE device and the result of coating the nitride compound on the substrate by using the method according to the above embodiment was observed with an electron microscope, and as shown in FIG. It is composed of 20μm diameter crystal grains and all the crystals were found to be arranged in the C-axis direction perpendicular to the (0001) plane.

The deposited film could completely cover the entire surface of the substrate with a deposition time of a few minutes. As a result, its growth rate was about 500 nm / min during deposition. The crystal structure of the deposited film was confirmed by an X-ray diffractometer and a reflection high energy electron diffraction (RHEED). Representative X-ray diffraction spectra of the deposited gallium nitride single crystal thin film show three major X-ray diffraction patterns at 2θ = 34.5 ° (d = 2.589 °), 72.6 ° (d = 1.295 °) and 125.3 ° (d = 0.863 °). Peaks are observed, corresponding to the (002), (004) and (006) planes of gallium nitride single crystals, respectively. From the X-ray diffraction analysis, the deposited thin film was confirmed to have a burzite structure, and the RHEED analysis also showed that the formed thin film was a single crystal thin film as shown in FIG.

In addition, the gallium nitride single crystal thin film prepared according to the present invention was measured by the van der Pauw method (carrier concentration) value of 2 × 10 ¹⁸ ~ 10 ¹⁹ cm ^-3 and the hole mobility ( Hall mobility) value was observed to have electrical properties in the range of 2 ~ 20 cm ² V ^-1 S ^-1 .

As described above, when the nitride compound is coated and grown on the substrate by the laser VPE method using the laser VPE device according to the present invention, a single wavelength of light is continuously reacted in a constant pulse form unlike the conventional method. By irradiating inwardly, the reaction raw material can be selectively excited, and the deposition rate on the substrate is very fast, and the deposit to be obtained can be controlled relatively easily by reaction kinetics depending on the selective wavelength.

In addition, due to the inherent light collecting property of the laser light, a fine and precise thin film can be formed on the localized area, and a semiconductor structure having a microstructure can be manufactured by irradiating the laser light on the desired area for deposition.

In addition, the photothermal reaction and photolysis reaction by laser light energy enables low temperature growth, thereby greatly reducing the impurity content of the grown semiconductor thin film and improving the crystallinity of the thin film.

Claims (6)

An apparatus for growing a nitride compound into a thin film heteroepitaxially on a substrate made of a heterogeneous material, comprising: a vacuum chamber (1), a laser light supply device (2) for outputting laser light, and a vacuum chamber (1) Laser light guiding means (3) for guiding up to), a reactor body supply means (4) for introducing a reaction raw material into the vacuum chamber (1) and a vacuum holding means (5) for maintaining a vacuum state inside the vacuum chamber (1) Laser VPE device, characterized in that consisting of. The vacuum chamber (1) according to claim 1, wherein the vacuum chamber (1) is attached to the portion where the laser light (7) flows, and a booster window (13) is attached to the nitrogen gas from the internal position toward the booster window (13). Nitrogen gas supply means (14) is provided, the laser VPE apparatus, characterized in that the beam stopper 22 is installed on the opposite side of the booster window (13). 3. The vacuum chamber (1) according to claim 1 or 2, wherein the resistance heater (15) of the metal foil is fixed to the copper rod (16) for supplying power to the inner center thereof with a screw (17). 15) A laser VPE apparatus, characterized in that a K-type thermocouple (18) is connected below, and a substrate (6) is placed on the resistive electric (15). The method of claim 1, wherein the laser light guide means (3) focuses or disperses a laser reflector (9), an aperture (10), and a light to adjust an irradiation path of the laser light (7) inside the closed tube (8). A laser VPE device, characterized in that it comprises a lens (11), and an attenuator (12) for adjusting the dose of laser light (7). The method of claim 1, wherein the reactor supply means (4) by adjusting the injection speed to the mass flow controller 19 according to the type of the reactor body through each of the gas cylinder 20 through the gas valve 21 through the vacuum chamber ( Laser VPE device, characterized in that it is configured to be sprayed toward the substrate (6) of 1). The vacuum holding device (5) according to claim 1, wherein the vacuum holding means (5) comprises a vacuum evacuation system consisting of a vacuum measuring device, a diffusion pump, and a rotary pump, a turbo pump (23), a gate valve (24), a bypass valve, and a quadrupole mass spectrometer (25). It is composed of a mass spectrometer consisting of a), the laser VPE device characterized in that a constant vacuum state is maintained by analyzing the reaction process of the reaction gas and the product gas analyzed by the mass spectrometer (25).