KR970002100Y1 - Wafer evaporation apparatus - Google Patents
Wafer evaporation apparatus Download PDFInfo
- Publication number
- KR970002100Y1 KR970002100Y1 KR2019940007472U KR19940007472U KR970002100Y1 KR 970002100 Y1 KR970002100 Y1 KR 970002100Y1 KR 2019940007472 U KR2019940007472 U KR 2019940007472U KR 19940007472 U KR19940007472 U KR 19940007472U KR 970002100 Y1 KR970002100 Y1 KR 970002100Y1
- Authority
- KR
- South Korea
- Prior art keywords
- flange
- ring
- cooling water
- plate
- cooling
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
내용없음.None.
Description
제1도는 종래 장치를 나타낸 종단면도.1 is a longitudinal sectional view showing a conventional device.
제2도는 본 고안 장치를 나타낸 종단면도.Figure 2 is a longitudinal cross-sectional view showing the device of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
3 : 냉각판 4 : 플랜지3: cold plate 4: flange
5 : 오링 7 : 냉각수공급관5: O-ring 7: Cooling water supply pipe
8 : 오링보호판 9 : 냉각수분기관8: O-ring protective plate 9: Cooling water distribution pipe
본 고안은 웨이퍼 증착장비에서 석영튜브내를 진공상태로 유지하기 위해 사용되는 오링의 보호장치에 관한 것으로서, 좀더 구체적으로는 그 구조를 개선하여 오링이 고온에서도 견딜 수 있도록 한 것이다.The present invention relates to an O-ring protection device used to maintain a vacuum in a quartz tube in a wafer deposition equipment, and more specifically, to improve the structure so that the O-ring can withstand high temperatures.
첨부도면 제1도는 종래의 장치를 나타낸 종단면도로서, 증착로(1)내에 설치된 석영튜브(2)를 웨이퍼(도시는 생략함)의 증착공정시 외부의 공기와 차단시켜 진공상태(4×10-³Torr)로 유지시키기 위해 냉각판(3)과 플랜지(4)에 각각 오링(5)을 설치하도록 되어 있고 상기 석영튜브의 입구를 폐쇄시키는 캡(6)과 플랜지(4), 그리고 냉각판(3)과 플랜지(4)에는 공정시 발생되 고온(약750-810oC)으로부터 오링(5)을 보호하도록 1개의 냉각수공급관(7)을 연결하여 공정시 상기 냉각수공급관으로 상온(20oC)의 냉각수를 공급하도록 되어있다.FIG. 1 is a longitudinal sectional view showing a conventional apparatus, in which a quartz tube 2 installed in a deposition furnace 1 is blocked by external air during the deposition process of a wafer (not shown) and is vacuumed (4 × 10). O-rings (5) are provided in the cooling plate (3) and the flange (4), respectively, in order to maintain the torr. 3) and the flange 4 is connected to one cooling water supply pipe (7) to protect the O-ring (5) from the high temperature (approximately 750-810 o C) generated during the process at room temperature (20 o C) to the cooling water supply pipe during the process To supply coolant.
그러나 이러한 종래의 장치는 냉각수공급관이 1개밖에 없기 때문에 웨이퍼의 증착공정시 플랜지(4)에서 발생되는 온도를 100oC이하로 냉각시킬 수 없게 되므로 오링(5)을 플랜지(4)에 장착후 2-4일정도 지난 후에는 플랜지로 전도되는 고온에 의해 오링이 변형 및 파손되어 공정가스가 누설(Leak)되었으므로 고정진행을 중단하고 오링을 교체한 다음 플랜지를 재조립하여야 되었다.However, since the conventional apparatus has only one cooling water supply pipe, the temperature generated in the flange 4 during the deposition process of the wafer cannot be cooled to 100 o C or less, and thus the O-ring 5 is mounted on the flange 4. After 2-4 days, the O-ring deformed and broken due to the high temperature conducted to the flange, and the process gas leaked. Therefore, the fixing process was stopped, the O-ring was replaced, and the flange was reassembled.
이에따라 석영튜브내를 다시 진공상태로 유지시키기 위해서는 24시간이상 소요되었으므로 생산성이 저하되는 문제점을 갖게된다.Accordingly, it takes more than 24 hours to maintain the vacuum in the quartz tube again, so there is a problem that the productivity is lowered.
본 고안은 종래의 이와같은 문제점을 해결하기 위해 안출한 것으로서, 그 구조를 개선하여 플랜지측에 설치되는 오링이 공정시 고온에 의해 변형되지 않도록 하는데 그 목적이 있다.The present invention has been made in order to solve such a problem in the prior art, and its purpose is to improve its structure so that the O-ring installed on the flange side is not deformed by high temperature during the process.
상기 목적을 달성하기 위한 본 고안의 형태에 따르면, 냉각판과 플랜지에 각각 오링을 설치하여 상기 냉각판과 플랜지내로 냉각수를 공급하도록 된 것에 있어서, 냉각판과 접속되는 플랜지의 외측으로 오링보호판을 설치하고 상기 냉각판과 오링보호판 그리고 플랜지에는 냉각수분기관을 각각 연결하여 냉각수공급관을 통해 공급된 냉각수가 냉각수분기관으로 공급되도록하여서 된 웨이퍼증착장비의 오링보호장치가 제공된다.According to an aspect of the present invention for achieving the above object, in order to supply the cooling water into the cooling plate and the flange by installing the O-ring on the cooling plate and the flange, respectively, to install the O-ring protective plate on the outside of the flange connected to the cooling plate The cooling plate, the O-ring protection plate, and the flange are connected to a cooling water distributor, respectively, so that the cooling water supplied through the cooling water supply pipe is supplied to the cooling water distributor.
이하, 본 고안을 일 실시예로 도시한 첨부된 도면 제2도를 참고로하여 더욱 상세히 설명하면 다음과 같다.Hereinafter, with reference to the accompanying drawings, Figure 2 showing the present invention as an embodiment in more detail as follows.
첨부도면 제2도는 본 고안 장치를 나타낸 종단면도로서, 종래의 구성과 동일한 부분은 그 설명을 생략하고 동일부호를 부여하기로 한다.2 is a longitudinal cross-sectional view showing the device of the present invention, the same parts as in the conventional configuration will be omitted and the same reference numerals will be given.
본 고안은 냉각판(3)과 접속되는 플랜지(4)의 외측으로 공정진행시 고온에 의해 오링(5)이 파손 또는 변형되는 것을 방지하는 오링보호판(8)이 설치되어 있고 냉각수를 공급하는 냉각수공급관(7)에는 냉각수분기관(9)이 분기되어 상기 냉각판(3)과 오링보호판(8) 그리고 플랜지(4)와 각각 연결되어 있다.The present invention is provided with an O-ring protection plate (8) which prevents the O-ring (5) from being damaged or deformed by high temperature when the process proceeds to the outside of the flange (4) connected to the cooling plate (3), the cooling water for supplying cooling water The cooling water distributor 9 is branched to the supply pipe 7 and connected to the cooling plate 3, the O-ring protection plate 8, and the flange 4, respectively.
이와같이 구성된 본 고안의 작용, 효과를 설명하면 다음과 같다.Referring to the operation, effects of the present invention configured as described above are as follows.
먼저 석영튜브(2)내에 증착하고자하는 웨이퍼를 적재하고 캡(6)을 닫으면 오링(5)에 의해 석영튜브(2)내부가 외부와 차단된다.First, when the wafer to be deposited is loaded in the quartz tube 2 and the cap 6 is closed, the inside of the quartz tube 2 is blocked by the O-ring 5 from the outside.
이러한 상태에서 진공장비의 가동으로 석영튜브내부를 진공상태로 유지한 다음 히터(도시는 생략함)에 의해 석영튜브내를 가열하면서 반응가스를 석영튜브내로 흘려보내면 반응가스가 반응을하게 되므로 증착물질이 웨이퍼의 표면에 달라붙는다. 상기 동작시 석영튜브(2)내는 고온(750-810oC)을 유지하게 되지만, 냉각판(3)과 오링보호판(8) 그리고 플랜지(4)로 냉각수분기관(9)을 통해 냉각수가 각각 공급되어 냉각효율을 증대시키게 되므로 석영튜브내부를 실링하는 오링(5)이 과열되지 않게되고, 이에따라 공정중에 오링이 파손 또는 변형되지 않게 된다.In this state, the reaction gas flows into the quartz tube while the inside of the quartz tube is kept in a vacuum state by the operation of the vacuum equipment and then heated in the quartz tube by a heater (not shown). It sticks to the surface of this wafer. In this operation, the quartz tube 2 maintains a high temperature (750-810 o C), but the cooling water through the cooling water distribution pipe 9 to the cooling plate 3, the O-ring protection plate 8 and the flange 4, respectively. Since the supply increases the cooling efficiency, the O-ring 5 sealing the inside of the quartz tube is not overheated, so that the O-ring is not broken or deformed during the process.
이상에서와 같이 본 고안은 플랜지부근으로 전도되는 고온을 약 40oC까지 낮출 수 있어 공정중에 오링의 파손으로 유해가스가 석영튜브의 외부로 누설(Leak)되는 것을 방지할 수 있게되므로 완전성을 도모하게됨은 물론 오링의 파손에 따른 교체작업을 하지않아도 되므로 생산성을 향상시키게 되는 효과를 얻게된다.As described above, the present invention can reduce the high temperature conducted near the flange to about 40 ° C., thus preventing the harmful gas from leaking to the outside of the quartz tube during breakage of the O-ring during the process, thereby improving its integrity. Of course, there is no need to replace the operation due to the breakage of the O-ring, thereby improving the productivity.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940007472U KR970002100Y1 (en) | 1994-04-11 | 1994-04-11 | Wafer evaporation apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940007472U KR970002100Y1 (en) | 1994-04-11 | 1994-04-11 | Wafer evaporation apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950031483U KR950031483U (en) | 1995-11-22 |
| KR970002100Y1 true KR970002100Y1 (en) | 1997-03-19 |
Family
ID=19380733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940007472U KR970002100Y1 (en) | 1994-04-11 | 1994-04-11 | Wafer evaporation apparatus |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970002100Y1 (en) |
-
1994
- 1994-04-11 KR KR2019940007472U patent/KR970002100Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950031483U (en) | 1995-11-22 |
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