KR970000723B1 - Mos fet of structure - Google Patents

Mos fet of structure Download PDF

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Publication number
KR970000723B1
KR970000723B1 KR93013696A KR930013696A KR970000723B1 KR 970000723 B1 KR970000723 B1 KR 970000723B1 KR 93013696 A KR93013696 A KR 93013696A KR 930013696 A KR930013696 A KR 930013696A KR 970000723 B1 KR970000723 B1 KR 970000723B1
Authority
KR
South Korea
Prior art keywords
region
ldd
gate electrode
ldd region
punch
Prior art date
Application number
KR93013696A
Other languages
Korean (ko)
Other versions
KR950004590A (en
Inventor
Joon-Hee Lim
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR93013696A priority Critical patent/KR970000723B1/en
Publication of KR950004590A publication Critical patent/KR950004590A/en
Application granted granted Critical
Publication of KR970000723B1 publication Critical patent/KR970000723B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A gate electrode(10) is formed on a first conductive-type semiconductor substrate(1). An LDD(lightly doped drain) region(8) of second conductive-type formed in the substrate(1) is overlap the gate electrode(10). Under the LDD region(8), a punch-through stopping region(7) is fully overlap the LDD region(8). The punch-through stopping region(7) is located only under the LDD region(8), thereby it is possible to prevent the back-bias effect of MOSFETs. Also, the LDD region(8) is located to the lower part of the gate electrode(10), thereby preventing a generation of the hot carreier.
KR93013696A 1993-07-20 1993-07-20 Mos fet of structure KR970000723B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93013696A KR970000723B1 (en) 1993-07-20 1993-07-20 Mos fet of structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93013696A KR970000723B1 (en) 1993-07-20 1993-07-20 Mos fet of structure

Publications (2)

Publication Number Publication Date
KR950004590A KR950004590A (en) 1995-02-18
KR970000723B1 true KR970000723B1 (en) 1997-01-18

Family

ID=19359632

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93013696A KR970000723B1 (en) 1993-07-20 1993-07-20 Mos fet of structure

Country Status (1)

Country Link
KR (1) KR970000723B1 (en)

Also Published As

Publication number Publication date
KR950004590A (en) 1995-02-18

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