KR970000442Y1 - Anti-oscillation apparatus of treated piece in the plasma reaction tube - Google Patents

Anti-oscillation apparatus of treated piece in the plasma reaction tube Download PDF

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KR970000442Y1
KR970000442Y1 KR2019930028104U KR930028104U KR970000442Y1 KR 970000442 Y1 KR970000442 Y1 KR 970000442Y1 KR 2019930028104 U KR2019930028104 U KR 2019930028104U KR 930028104 U KR930028104 U KR 930028104U KR 970000442 Y1 KR970000442 Y1 KR 970000442Y1
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reaction tube
vacuum
sample
plasma reaction
plasma
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KR2019930028104U
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KR950021397U (en
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이선용
김오규
권영규
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포항종합제철 주식회사
조말수
재단법인 산업과학기술연구소
백덕현
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없슴.No content.

Description

플라즈마(Plasma)반응관의 시료 흔들림 방지장치Sample shake prevention device of plasma reaction tube

제1도는 종래 플라즈마 반응관의 사시도.1 is a perspective view of a conventional plasma reaction tube.

제2도는 종래 플라즈마 반응관의 종단면도.2 is a longitudinal sectional view of a conventional plasma reaction tube.

제3도는 본 고안에 따른 플라즈마 반응관의 종단면도3 is a longitudinal sectional view of the plasma reaction tube according to the present invention

제4도는 본 고안의 따른 플라즈마 반응관에서 일반 시료 사용시 반응기판부의 평면도.Figure 4 is a plan view of the reactor plate when using a common sample in the plasma reaction tube according to the present invention.

제5도는 본 고안에 따른 플라즈마 반응관에서 조각난시료 사용시 반응기판부의 평면도.5 is a plan view of the reactor plate portion when using a fragment sample in the plasma reaction tube according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 공정가스 유입구 2 : 상부플레이트(plate)1: process gas inlet 2: top plate

3 : 유리 챔버 (chamber) 4 : 시료3: glass chamber 4: sample

5 : 반응기판 6 : 방전방지 보호망5: reactor plate 6: discharge protection network

7 : 반응기판지지기등 8 : 진공배출구7: reactor plate support, etc. 8: vacuum outlet

9 : 하부플레이트(plate) 10 : 방지홀(hole)9: lower plate 10: prevention hole

11 : 방지홀(hole)진공 배출구 12 : 방응관 진공 배출구11: prevention hole vacuum outlet 12: vacuum tube vacuum outlet

13 : 방지홀 마개 14 : 공기배출구13: prevention hole stopper 14: air outlet

본 고안은 반도체 제조공정인 플라즈마(plasma)건식 에칭(etching)과 플라즈마(plasma)화학증착에 사용되는 플라즈마 반응관에 있어서, 특히 상기 공정시 반응기판의 시료 흔들림 방지장치에 관한 것이다.The present invention relates to a plasma reaction tube used for plasma dry etching and plasma chemical vapor deposition, which is a semiconductor manufacturing process, and more particularly, to an apparatus for preventing sample shaking of a reactor plate during the process.

최근 반도체 소자의 집적도의 증가와 다양한 구조를 갖는 반도체 소자의 제조에 대한 요구의 증대로 저온에서 절연막 형성의 필요성을 증대시키고 있으며, 또한 반도체 소자의 초집적화로 인한 패턴(pattern) 선폭의 감소는 에칭마스크(mask)와 동일한 크기의 패턴을 에칭해야만 하는 반도체 제조 공정상의 기술이 요구되고 있다.Recently, the necessity of insulating film formation at low temperatures is increasing due to the increase in the degree of integration of semiconductor devices and the demand for the manufacture of semiconductor devices having various structures. There is a demand for technology in the semiconductor manufacturing process that must etch a pattern having the same size as a mask.

따라서 이러한 공정을 실현하기 위해서 플라즈마를 이용한 고진공하에서 공정을 진행하여 공정의 재현성 및 수율을 높이고 있다.Therefore, in order to realize such a process, the process is performed under high vacuum using plasma to increase the reproducibility and yield of the process.

상기 플라스마를 이용한 공정으로는 플라즈마 건식 에칭과 플라즈마 화학 증착 공정이 이용되고 있으며 상기 공정을 진행할 시에는 플라즈마 반응관을 사용하여 공정을 진행한다.Plasma dry etching and plasma chemical vapor deposition processes are used as the process using the plasma, and the process is performed using a plasma reaction tube during the process.

상기 공정은 플라즈마 반응관내에 시료를 집어 넣고 진공상태를 만든 후 공정에 사용되는 공정가스를 취입하고, 동시에 양전극을 고주파를 이용하여 전계시킴으로써 플라즈마를 발생시켜 공정에 부합되도록 패턴을 에칭하거나 절연막을 형성 증착하는 공정이다.The process involves placing a sample in a plasma reaction tube, creating a vacuum state, blowing the process gas used for the process, and simultaneously generating a plasma by electric field using a high frequency electrode to etch a pattern or forming an insulating film in accordance with the process. It is a process of vapor deposition.

제1도 및 제2도는 종래 플라즈마(plasma) 반응관의 사시도의 종단면도이며, 플라즈마 건식에칭 또는 화학증착 공정은 반응기판(5) 위에 시료(4)를 올려 놓은 후, 진공펌프(pump)를 이용하여 플라즈마 반응관 내의 공기를 반응기판(5) 측면의 공기배출구(14)를 통해 진공배출구(8)로 진공배출시키고, 공정가스유입구(1)로 공정가스를 취입함과 동시에 고주파를 이용전극을 전계시켜 플라즈마를 발생시킴으로 이루어진다.1 and 2 are longitudinal cross-sectional views of a perspective view of a conventional plasma reaction tube. In the plasma dry etching or chemical vapor deposition process, after placing the sample 4 on the reactor plate 5, a vacuum pump is applied. The air in the plasma reaction tube is evacuated to the vacuum discharge port 8 through the air discharge port 14 on the side of the reactor plate 5, and blows the process gas into the process gas inlet 1, and at the same time uses a high frequency electrode. Is generated by generating an plasma.

그러나, 종래 플라즈마 반응관에서는 진공배출시 내부공기가 반응기판(5) 측면의 공기배출구(14)를 통해 진공배출구(8)로 배출되므로 상기 공기배출구(14) 주면에 공기의 와류와 진동으로 인해 반응기판(5)위의 시료(4)가 흔들려 한쪽으로 이동되고, 공정가스 유입과 동시에 공정이 진행될 때에도 일정한 진공압력이 요구됨으로써 계속하여 진공배출이 행해지며 그 결과 시료(4)의 미세한 떨림이 연속적으로 일어난다.However, in the conventional plasma reaction tube, since the internal air is discharged to the vacuum discharge port 8 through the air discharge port 14 on the side of the reactor plate 5 due to the vortex and vibration of the air on the main surface of the air discharge port 14 The sample 4 on the reactor plate 5 is moved to one side by shaking, and a constant vacuum pressure is required even when the process proceeds at the same time as the process gas inflow, so that the vacuum is discharged continuously. It happens continuously.

결국 시료(4)의 균일한 에칭 및 증착이 어려워지며, 또한 실험용으로 다수개의 조각난 시료(4)들을 동시에 사용할 경우에는 시료(4)들이 섞이는 문제점이 있었다.As a result, it becomes difficult to uniformly etch and deposit the sample 4, and also when the plurality of fragmented samples 4 are used simultaneously for the experiment, there is a problem that the samples 4 are mixed.

따라서, 본 고안은 상기와 같은 종래 문제점들을 해결하기 위하여 안출된 것으로, 시료의 위치 이동, 떨림 및 섞임없이 균일한 에칭 및 증착을 할 수 있는 플라즈마 반응관의 시료 흔들림 방지장치를 제공함에 있다.Accordingly, the present invention has been made to solve the conventional problems as described above, to provide a sample shake prevention device of the plasma reaction tube that can be uniformly etched and deposited without moving, shaking and mixing of the sample.

상기목적을 달성하기 위하여 본 고안은 공정가스유입구(1), 상부 플레이트(2), 반응기판(5), 진공배출구(8)를 포함하는 플라즈마 반응관에 있어서, 상기 반응기판(5)에 진공배출에 의해 시료(4)를 흡착 고정시키도록 형성시킨 복수개의 방지홀(10)과, 상기 방지홀(10)과 진공배출구(8) 사이에 설치되며 그 측면 복수개소에는 반응관 내부의 공기를 배출시키는 반응관 진공배출구(12)를 형성시킨 방지홀 진공배출구(11)를 갖추어서 구성되며, 상기 방지홀(10)은 조각난 시료를 흡착 고정시킬 수 있도록 방지홀 마개(13)로서 선택적으로 래폐되도록 하였다.In order to achieve the above object, the present invention is a plasma reaction tube including a process gas inlet (1), an upper plate (2), a reactor plate (5), and a vacuum outlet (8), and the vacuum in the reactor plate (5). A plurality of prevention holes 10 formed to adsorb and fix the sample 4 by discharge, and are provided between the prevention holes 10 and the vacuum discharge port 8, and air in the reaction tube is provided at a plurality of side surfaces thereof. It comprises a prevention hole vacuum discharge port 11 formed with a reaction tube vacuum discharge port 12 for discharging, wherein the prevention hole 10 is selectively closed as a prevention hole stopper 13 so as to adsorb and fix fragmented samples. It was made.

본 고안을 첨부된 도면을 참고하여 상세히 설명하면 다음과 같다.Referring to the present invention in detail with reference to the accompanying drawings as follows.

제3도, 제4에 도시한 바와 같이 플라즈마 건식 에칭 및 화학증착 공정은 먼저 가공하고자 하는 시료(4)를 반응기판(5)위에 올려 놓은 후, 진공펌프를 이용하여 플라즈마 반응관 내의 공기를 진공 배출시킬 때, 반응기판(5) 위에 놓여진 시료(4)는 방지홀(10)과 방지홀 진공배출구(11)를 통해 먼저 반응기판(5)에 흡착되고 동시에 공기배출구(14)와 반응관 진공 배출구(12)를 통해 플라즈마 반응관 내의 전체공기를 진공배출 시키며, 다음으로 공정가스유입구(1)를 통해 공정에 요구되는 가스를 취입하고 상부전극의 역할을 하는 상부 플레이트(2)와 하부전극이 되는 반응기판(5)은 고주파를 이용하여 전계시켜 플라즈마를 발생시킴으로써 진행된다.As shown in FIG. 3 and FIG. 4, in the plasma dry etching and chemical vapor deposition process, the sample 4 to be processed is first placed on the reactor plate 5, and then the air in the plasma reaction tube is vacuumed using a vacuum pump. When discharging, the sample 4 placed on the reactor plate 5 is first adsorbed to the reactor plate 5 through the prevention hole 10 and the prevention hole vacuum outlet 11, and at the same time, the air outlet 14 and the reaction tube vacuum. Through the outlet 12, the entire air in the plasma reaction tube is discharged in a vacuum, and the upper plate 2 and the lower electrode which inject the gas required for the process through the process gas inlet 1 and serve as the upper electrode are The reactor plate 5 to be advanced proceeds by generating an plasma by electric field using high frequency.

상기 공정진행 중에도 플라즈마 반응관 내부의 진공압력을 일정하게 유지시키기 위해 계속적인 진공배출을 행한다.Continuous vacuum discharge is performed to keep the vacuum pressure inside the plasma reaction tube constant during the process.

그리고 제5도는 본 고안에 따른 플라즈마 반응관에서 조각난 시료 사용시 반응기판부의 평면도로서 사용하지 않는 방지홀(10)은 방지홀 마개(13)로 막은 후 전술한 것과 동일한 과정으로 공정을 진행할 수 있음을 보여준다.FIG. 5 shows that the prevention hole 10 which is not used as a plan view of the reactor plate part when the sample fragmented in the plasma reaction tube according to the present invention is blocked by the prevention hole stopper 13 may be processed in the same process as described above. Shows.

전술한 과정에서 시료(4)는 방지홀(10)과 방지홀 진공배출구(11)를 통해 반응기판(5)에 먼저 흡착되므로 공기배출구(14)와 반응관 진공배출구(12)를 통한 진공배출시 시료(4)의 위치가 반응기판(5) 위에서 이동되지 않으며, 공정중 계속된 진공배출에도 미세한 떨림이 없으며 조각난 시료(4)를 사용시에는 방지홀 마개(13)를 사용함으로써 시료(4)의 섞임 및 떨림을 방지할 수 있는 효과를 거둘 수 있다.In the above-described process, since the sample 4 is first adsorbed to the reactor plate 5 through the prevention hole 10 and the prevention hole vacuum outlet 11, the vacuum is discharged through the air outlet 14 and the reaction tube vacuum outlet 12. The position of the sample 4 is not moved on the reactor plate 5, there is no slight vibration even in the vacuum discharge during the process, and when the fragmented sample 4 is used, the sample hole 4 is used by using the prevention hole cap 13. It is effective to prevent mixing and shaking.

따라서 본 고안은 종래 플라즈마 반응관에서 야기되었던 문제점들을 해결하여, 시료의 흔들림없이 균일한 플라즈마 건식 에칭 및 플라즈마 화학 증착 공정을 행할 수 있는 효과가 있는 것이다.Therefore, the present invention is to solve the problems caused in the conventional plasma reaction tube, it is possible to perform a uniform plasma dry etching and plasma chemical vapor deposition process without shaking the sample.

Claims (2)

공정가스 유입구(1), 상부 플레이트(2), 반응기판(5), 진공배출구(8)를 포함하는 플라즈마 반응관에 있어서, 상기 반응기판(5)에 진공배출에 의해 시료(4)를 흡착 고정시키도록 형성시킨 복수개의 방지홀(10)과, 상기 방지홀(10)과 진공배출구(8) 사이에 설치되며, 그 측면 복수 개소에는 반응관내부의 공기를 배출시키는 반응관 진공배출구(12)를 형성시킨 방지홀 진공배출구(11)를 갖추어서 구성된 것을 특징으로 하는 플라즈마 반응관의 시료흔들림 방지장치.In a plasma reaction tube including a process gas inlet 1, an upper plate 2, a reactor plate 5, and a vacuum outlet 8, the sample 4 is adsorbed by vacuum discharge to the reactor plate 5. A plurality of prevention holes 10 formed to be fixed and installed between the prevention holes 10 and the vacuum discharge port 8, the reaction tube vacuum discharge port 12 for discharging air in the reaction tube in a plurality of side surfaces Sample shake prevention device of the plasma reaction tube, characterized in that it comprises a prevention hole vacuum outlet (11) formed. 제1항에 있어서, 상기 방지홀(10)은 조각난 시료를 흡착 고정시킬 수 있도록 방지홀 마개(13)로서 선택적으로 개폐되도록 한 것을 특징으로 하는 플라즈마 반응관의 시료 흔들림 방지장치.The apparatus of claim 1, wherein the prevention hole (10) is selectively opened and closed as a prevention hole stopper (13) to adsorb and fix the fragmented sample.
KR2019930028104U 1993-12-16 1993-12-16 Anti-oscillation apparatus of treated piece in the plasma reaction tube KR970000442Y1 (en)

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