KR960042738A - Data transfer and word line control circuit of multiport memory - Google Patents
Data transfer and word line control circuit of multiport memory Download PDFInfo
- Publication number
- KR960042738A KR960042738A KR1019950011419A KR19950011419A KR960042738A KR 960042738 A KR960042738 A KR 960042738A KR 1019950011419 A KR1019950011419 A KR 1019950011419A KR 19950011419 A KR19950011419 A KR 19950011419A KR 960042738 A KR960042738 A KR 960042738A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- output
- word line
- data
- data transfer
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Abstract
1. 청구범위에 기재된 발명이 속한 기술분야1. TECHNICAL FIELD OF THE INVENTION
다이내믹 메모리 셀을 가지는 저장섹션과 저장섹션의 컬럼방향의 직렬포트를 구비하는 멀티포트 메모리에 관한 것이다.A multiport memory having a storage section having a dynamic memory cell and a serial port in the column direction of the storage section.
2. 발명이 해결하고자 하는 기술적 과제2. Technical problem to be solved by the invention
로우 어드레스 스트로브신호와 출력인에이블신호의 타이밍 마진에 제한을 받게 되는 것을 개선한다.Row address strobe signal And output enable signal Improved timing margins
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
다이내믹 메모리 셀과 데이타 전송 게이트와 각각 로우 및 컬럼으로 정의되는 비트라인 및 워드라인을 포함하는 저장섹션과, 저장섹션에서 컬럼방향의 데이타를 직렬 액세스하는 직렬포트와, 저장섹션의 데이타를 직렬포트로 전송하기 위한 데이타 전송 사이클에 있어서 저장섹션의 선택된 워드라인의 데이타를 데이타 전송 게이트신호에 의해 직렬포트로 전송시키는 수단을 구비한 멀티포트 메모리에 있어서, 로우 어드레스 스트로브신호의 인에이블에 응답하여 저장섹션의 하나의 워드라인을 선택하여 인에이블시키고 이후 출력인에이블신호의 액티브 시점으로부터 일정 지연후 워드라인을 디제이블시키는 워드라인 제어수단을 구비한다.A storage section including a dynamic memory cell and a data transfer gate, and bit lines and word lines defined as rows and columns, respectively, a serial port for serial access of column data in the storage section, and a serial port for data in the storage section. A multiport memory having means for transferring data of a selected word line of a storage section to a serial port by a data transfer gate signal in a data transfer cycle for transmission, the storage section responsive to enabling the row address strobe signal. Word line control means for selecting and enabling one word line and for disabling the word line after a predetermined delay from the active time point of the output enable signal.
4. 발명의 중요한 용도4. Important uses of the invention
티포트 메모리에 있어서 워드라인을 제어하는데 이용한다.It is used to control word lines in the teapot memory.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제6도는 본 발명에 따른 데이타 전송 및 워드라인 제어를 위한 로우 어드레스 스트로브신호 버퍼회로도, 제7도는 본 발명에 따른 전송모드신호 발생회로도.6 is a row address strobe signal buffer circuit for data transmission and word line control according to the present invention, and FIG. 7 is a transmission mode signal generating circuit diagram according to the present invention.
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950011419A KR0146543B1 (en) | 1995-05-10 | 1995-05-10 | Data transfer and word line control circuit for multiport memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950011419A KR0146543B1 (en) | 1995-05-10 | 1995-05-10 | Data transfer and word line control circuit for multiport memory |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960042738A true KR960042738A (en) | 1996-12-21 |
KR0146543B1 KR0146543B1 (en) | 1998-11-02 |
Family
ID=19414082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950011419A KR0146543B1 (en) | 1995-05-10 | 1995-05-10 | Data transfer and word line control circuit for multiport memory |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0146543B1 (en) |
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1995
- 1995-05-10 KR KR1019950011419A patent/KR0146543B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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KR0146543B1 (en) | 1998-11-02 |
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