KR960039200A - Oxidizer and Oxidation Method - Google Patents

Oxidizer and Oxidation Method Download PDF

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Publication number
KR960039200A
KR960039200A KR1019950008716A KR19950008716A KR960039200A KR 960039200 A KR960039200 A KR 960039200A KR 1019950008716 A KR1019950008716 A KR 1019950008716A KR 19950008716 A KR19950008716 A KR 19950008716A KR 960039200 A KR960039200 A KR 960039200A
Authority
KR
South Korea
Prior art keywords
gas
flow rate
control device
opening
rate control
Prior art date
Application number
KR1019950008716A
Other languages
Korean (ko)
Inventor
박준식
김경태
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950008716A priority Critical patent/KR960039200A/en
Priority to JP8088030A priority patent/JPH08288275A/en
Publication of KR960039200A publication Critical patent/KR960039200A/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Abstract

습식산화공정시 가스주입 초기에 발생하는 수소가스의 과도형상에 방지하기 위한 산화장치 및 산화방법에 관해 개시되어 있다. 산소가스의 유량을 제어하기 위한 제1유량제어장치와, 제1유량제어장치에 연결된 제1개폐수단을 구비하는 제1가스배관; 수소가스의 유량을 제어하기 위한 제2유량제어장치와, 제2유량제어장치의 입력단에 연결된 제2개폐수단을 구비하는 제2가스배관; 제1가스배관 및 제2가스배관을 통과한 가스들을 반응시키기 위한 반응관; 및 반응수단에서 발생한 물질을 이용하여 반도체기판을 산화시키기 위한 공정튜브를 구비하는 산화장치에 있어서, 일단은 제2유량제어장치와 제2개폐수단 사이에 연결되고, 타단은 제1의 가스공급기에 연결되며, 제1의 가스를 개폐하기 위한 제3개폐수단을 구비하는 제3가스배관을 더 구비하는 것을 특징으로 한다. 따라서, 간단한 구조 및 방법으로서 종래의 습식산화시 수소가스의 과도현상을 방지할 수 있으므로, 제품의 신뢰성 및 생산효율을 향상시킬 수 있다.An oxidation apparatus and an oxidation method for preventing a transient shape of hydrogen gas generated at the beginning of gas injection in a wet oxidation process are disclosed. A first gas pipe having a first flow rate control device for controlling a flow rate of oxygen gas and a first opening and closing means connected to the first flow rate control device; A second gas pipe having a second flow rate control device for controlling a flow rate of hydrogen gas, and a second opening and closing means connected to an input terminal of the second flow rate control device; A reaction tube for reacting gases passing through the first gas pipe and the second gas pipe; And a process tube for oxidizing the semiconductor substrate using the material generated from the reaction means, wherein one end is connected between the second flow control device and the second opening and closing means, and the other end is connected to the first gas supplier. It is connected, characterized in that it further comprises a third gas pipe having a third opening and closing means for opening and closing the first gas. Therefore, as a simple structure and method, it is possible to prevent the transient phenomenon of hydrogen gas during the conventional wet oxidation, thereby improving the reliability and production efficiency of the product.

Description

산화장치의 및 산화방법Oxidation apparatus and oxidation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 산화장치이다.3 is an oxidizer according to the present invention.

Claims (11)

산소가스의 유량을 제어하기 위한 제1유량제어장치와 상기 제1유량제어장치에 연결된 제1개폐수단을 구비하는 제1가스배관; 수소가스의 유량을 제어하기 위한 제2유량제어장치와 상기 제2유량제어장치의 입력단에 연결된 제2개폐수단을 구비하는 제2가스배관; 상기 제1가스배관 및 제2가스배관을 통과한 가스들을 반응시키기 위한 반응관; 및 상기 반응수단에서 발생한 물질을 이용하여 반도체기판을 산화시키기 위한 공정튜브를 구비하는 산화장치에 있어서, 일단은 상기 제2유량제어장치와 제2개폐수단 사이에 연결되고, 타단은 제1의 가스공급기에 연결되며, 상기 제1의 가스를 개폐하기 위한 제3개폐수단을 구비하는 제3가스배관을 더 구비하는 것을 특징으로 하는 산화장치.A first gas pipe having a first flow rate control device for controlling the flow rate of oxygen gas and a first opening and closing means connected to the first flow rate control device; A second gas pipe having a second flow rate control device for controlling a flow rate of hydrogen gas and a second opening and closing means connected to an input terminal of the second flow rate control device; A reaction tube for reacting gases passing through the first gas pipe and the second gas pipe; And a process tube for oxidizing the semiconductor substrate using the substance generated in the reaction means, wherein one end is connected between the second flow control device and the second opening and closing means, and the other end is a first gas. And a third gas pipe connected to the feeder and having a third opening and closing means for opening and closing the first gas. 제1항에 있어서, 상기 제1의 가스는 산소가스와 반응하지 않는 가스인 것을 특징으로 하는 산화장치.The oxidizing apparatus according to claim 1, wherein the first gas is a gas that does not react with oxygen gas. 제2항에 있어서, 상기 제1의 가스는 질소가스 또는 헬륨가스인 것을 특징으로 하는 산화장치.The oxidizing apparatus according to claim 2, wherein the first gas is nitrogen gas or helium gas. 산소가스를 반응관에 주입하는 제1공정; 상기 산소가스와 반응하지 않는 제1의 가스를 반응관에 주입하는 제2공정; 상기 제1의 가스의 주입을 차단하는 제3공정; 및 수소가스를 반응관에 주입시켜, 상기 산소가스와 반응시키는 제4공정으로 진행되는 것을 특징으로 하는 산화방법.A first step of injecting oxygen gas into the reaction tube; A second step of injecting a first gas that does not react with the oxygen gas into a reaction tube; A third step of blocking injection of the first gas; And a fourth step of injecting hydrogen gas into the reaction tube and reacting with the oxygen gas. 제4항에 있어서, 상기 제2공정은, 수소가스의 유량을 제어하기 위한 제2유량제어장치에서 과도현상이 일어나는 시간동안 진행되는 것을 특징으로 하는 산화방법.5. The oxidation method according to claim 4, wherein the second step is performed during a time period in which a transient phenomenon occurs in a second flow rate control device for controlling the flow rate of hydrogen gas. 제4항에 있어서, 상기 제1의 가스는 질소가스 또는 헬륨 가스인 것을 특징으로 하는 산화방법.The oxidation method according to claim 4, wherein the first gas is nitrogen gas or helium gas. 제4항에 있어서, 상기 제1의 가스와 수소가스는 동일한 가스배관을 통해 반응관에 주입되는 것을 특징으로 하는 산화방법.The oxidation method according to claim 4, wherein the first gas and the hydrogen gas are injected into the reaction tube through the same gas pipe. 산소가스를 반응관에 주입하는 제1공정; 상기 산소가스와 반응하지 않는 제1의 가스와 수소가스를 동시에 상기 반응관에 주입하는 제2공정; 및 상기 제1의 가스의 주입을 차단하는 제3공정으로 진행되는 것을 특징으로 하는 산화방법.A first step of injecting oxygen gas into the reaction tube; A second step of simultaneously injecting a first gas and a hydrogen gas which do not react with the oxygen gas into the reaction tube; And a third step of interrupting the injection of the first gas. 제8항에 있어서, 상기 제1의 가스와 수소가스는 동일한 가스배관을 통해 반응관에 주입되는 것을 특징으로 하는 산화방법.The oxidation method according to claim 8, wherein the first gas and the hydrogen gas are injected into the reaction tube through the same gas pipe. 제10항에 있어서, 상기 제2공정은, 수소가스의 유량을 제어하기 위한 제2유량제어장치에서 과도현상이 일어나는 시간동안 진행되는 것을 특징으로 하는 산화방법.The oxidation method according to claim 10, wherein the second step is performed during a time period in which a transient phenomenon occurs in a second flow rate control device for controlling the flow rate of hydrogen gas. 제8항에 있어서, 상기 제1의 가스는 질소가스 또는 헬륨가스 인 것을 특징으로 하는 산화방법.The oxidation method according to claim 8, wherein the first gas is nitrogen gas or helium gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950008716A 1995-04-13 1995-04-13 Oxidizer and Oxidation Method KR960039200A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950008716A KR960039200A (en) 1995-04-13 1995-04-13 Oxidizer and Oxidation Method
JP8088030A JPH08288275A (en) 1995-04-13 1996-04-10 Oxidation device and oxidation method

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Application Number Priority Date Filing Date Title
KR1019950008716A KR960039200A (en) 1995-04-13 1995-04-13 Oxidizer and Oxidation Method

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KR960039200A true KR960039200A (en) 1996-11-21

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361958B1 (en) * 1997-12-10 2003-04-26 가부시키가이샤 후지킨 How to Moisture Proprietorship
KR100781407B1 (en) * 2004-06-22 2007-12-03 동경 엘렉트론 주식회사 Substrate processing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361958B1 (en) * 1997-12-10 2003-04-26 가부시키가이샤 후지킨 How to Moisture Proprietorship
KR100781407B1 (en) * 2004-06-22 2007-12-03 동경 엘렉트론 주식회사 Substrate processing device

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Publication number Publication date
JPH08288275A (en) 1996-11-01

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