KR960038617A - Bidirectional-accessible mass memory device - Google Patents

Bidirectional-accessible mass memory device Download PDF

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Publication number
KR960038617A
KR960038617A KR1019950009964A KR19950009964A KR960038617A KR 960038617 A KR960038617 A KR 960038617A KR 1019950009964 A KR1019950009964 A KR 1019950009964A KR 19950009964 A KR19950009964 A KR 19950009964A KR 960038617 A KR960038617 A KR 960038617A
Authority
KR
South Korea
Prior art keywords
bidirectional
memory device
mass memory
accessible mass
accessible
Prior art date
Application number
KR1019950009964A
Other languages
Korean (ko)
Other versions
KR0143317B1 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950009964A priority Critical patent/KR0143317B1/en
Publication of KR960038617A publication Critical patent/KR960038617A/en
Application granted granted Critical
Publication of KR0143317B1 publication Critical patent/KR0143317B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Multi Processors (AREA)
KR1019950009964A 1995-04-26 1995-04-26 Bidirectional access possible memory KR0143317B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950009964A KR0143317B1 (en) 1995-04-26 1995-04-26 Bidirectional access possible memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950009964A KR0143317B1 (en) 1995-04-26 1995-04-26 Bidirectional access possible memory

Publications (2)

Publication Number Publication Date
KR960038617A true KR960038617A (en) 1996-11-21
KR0143317B1 KR0143317B1 (en) 1998-08-17

Family

ID=19413015

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950009964A KR0143317B1 (en) 1995-04-26 1995-04-26 Bidirectional access possible memory

Country Status (1)

Country Link
KR (1) KR0143317B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100472962B1 (en) * 1996-10-10 2005-06-07 조진영 Information exchange method using virtual port (DataTransmissionMethodusingVirtualPort)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1197867A3 (en) * 1996-06-06 2005-12-14 Freescale Semiconductor, Inc. Method for accessing memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100472962B1 (en) * 1996-10-10 2005-06-07 조진영 Information exchange method using virtual port (DataTransmissionMethodusingVirtualPort)

Also Published As

Publication number Publication date
KR0143317B1 (en) 1998-08-17

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