KR960038479A - Method for manufacturing an optical lithographic mask - Google Patents

Abstract

The present invention relates to phase-shifting optical lithographic masks. The phase-transferable optical lithography mask according to the present invention comprises a set of phase-shifting features 11 located within the phase-transition region and a set of enhanced alignment marks 13, 33 located within the alignment region of the mask. ≪ / RTI > Both of these sets are all located on a single plate of quartz 10. The method of the present invention includes a lift-off step to create a self-aligned region of the alignment mark with respect to the phase-transition wiring. All of the phase-transition wirings are patterned in a single step with all the alignment marks, all of which are made of a common material so as to be partially transparent to the optical radiation used in the optical lithographic system, ). Typically, the bottom layer is essentially oxynitride chromium. A strengthened alignment-mark shutter layer (12, 32) is located between the strengthened alignment mark and the phase-transition region to suppress leakage of optical radiation from the phase-transition wiring to the alignment mark region, And simultaneously with the mark. Further, the reinforced chip shutter layer (14, 34) can also be manufactured simultaneously with the reinforced alignment mat to suppress the leakage of optical radiation from one chip area to another chip area, all located on only one wafer Which is located between the chip areas.

Description

Method for manufacturing an optical lithographic mask

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FIG. 6 is a cross-sectional front view of several successive stages of a phase-shifting mask fabricated in accordance with a particular embodiment of the present invention; FIG.

Claims (7)

(a) a patterned layer having a first common thickness h and being partially transparent to optical radiation of wavelength lambda, with each portion located in at least a first (11) and second (12) Providing a transparent-layer substrate (10) on which a first layer of a first material is located on its upper major surface (b) forming a photoresist layer (15) of height H on the upper surface of the patterned first layer and the upper main surface of the substrate (c) in all of its areas covering the first area, in only a portion of its area covering the second area, and in its area lying between adjacent ones of the first and second areas A step of applying an impact with an electron beam to the photoresist layer (d) providing a light beam (UV) anywhere on the bottom of the photoresist layer before (c), or during (c), or after (c) (e) after the development, a portion of the photoresist layer that is (1) impacted by the electron beam, or (2) is in the second region but is not impacted by the electron beam or covers the patterned layer, Developing the photoresist layer such that only the side portion 31 of the photoresist layer remains undamaged (f) on any portion of the top surface of the undamaged portion of the photoresist layer, and on any area of the patterned first layer that does not cover the remaining portion of the photoresist layer, Depositing a second layer (21) of a second material that is chemically different and thick enough to be opaque to the radiation of wavelength lambda together with the patterned first layer, and (g) the residual of the photoresist so that the second layer is removed in all areas that are not removed from any areas 32, 33, 34 that cover the remaining portions of the photoresist layer but do not cover the remaining photoresist layer The method comprising the steps of: 2. The method of claim 1, further comprising: between step (d) and (e): (h) providing a different light beam anywhere on the sub-surface of the photoresist layer. The method of claim 2, further comprising, between steps (d) and (h), further comprising baking the photoresist layer 4. The method of claim 3, wherein the light beams of steps (d) and (h) each have essentially the same spectral content The method of claim 1, wherein essentially chromium is sputtered to deposit said second layer The method of claim 1, wherein the second layer has a thickness less than about (H-h) / 3 7. A method according to any one of claims 1 to 6, wherein step (a) essentially comprises depositing and sputtering chromium oxynitride to provide a patterned first layer