KR960035633A - DRAM refresh circuit - Google Patents

DRAM refresh circuit Download PDF

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Publication number
KR960035633A
KR960035633A KR1019950004713A KR19950004713A KR960035633A KR 960035633 A KR960035633 A KR 960035633A KR 1019950004713 A KR1019950004713 A KR 1019950004713A KR 19950004713 A KR19950004713 A KR 19950004713A KR 960035633 A KR960035633 A KR 960035633A
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KR
South Korea
Prior art keywords
dram
cpu
circuit
dram refresh
refresh
Prior art date
Application number
KR1019950004713A
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Korean (ko)
Inventor
김선오
Original Assignee
김광호
삼성전자 주식회사
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950004713A priority Critical patent/KR960035633A/en
Publication of KR960035633A publication Critical patent/KR960035633A/en

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Abstract

본 발명은 DRAM 리프레쉬 회로에 관한 것이다.The present invention relates to a DRAM refresh circuit.

본 발명은 각종 데이터를 처리하는 한편 시스템 전체를 제어하는 CPU와, 소정의 데이터를 저장하는 DRAM과, 상기 CPU와 DRAM의 커뮤니케이션을 중계해주는 DRAM 콘트롤러를 구비하는 DRAM 리프레쉬 회로에 있어서, 상기 DRAM 콘트롤러가 데이터를 임시로 저장하기 위한 복수의 버퍼와, 그 버퍼를 활성화시키기 위한 디코더 또는 선택성 로직 회로와, RAS 및 CAS를 제어하기 위한 RAS/CAS 제어회로와, 상기 CPU의 동작을 대기 시키기 위한 타이밍 회로를 구비하고 있다.The present invention provides a DRAM refresh circuit comprising a CPU for processing various data and controlling the entire system, a DRAM for storing predetermined data, and a DRAM controller for relaying communication between the CPU and the DRAM. A plurality of buffers for temporarily storing data, a decoder or selective logic circuit for activating the buffer, a RAS / CAS control circuit for controlling RAS and CAS, and a timing circuit for waiting for operation of the CPU. Equipped.

따라서 DRAM 리프레쉬를 행할 경우, 종래의 방식에서 처럼 CPU를 무조건 정지시키는 것이 아니라, CPU가 리프레쉬 중인 DRAM을 엑세스 할 때에만 CPU를 정지시킴으로써 CPU의 성능 저하를 방지할 수 있으며, 따라서 CPU의 운용효율 향상에 따른 작업시간 증대의 효과를 얻을 수 있다.Therefore, when the DRAM refresh is performed, the CPU performance is prevented by stopping the CPU only when the CPU accesses the DRAM being refreshed, instead of stopping the CPU unconditionally as in the conventional method, thereby improving the operating efficiency of the CPU. The work time can be increased according to the.

Description

디램 리프레쉬 회로DRAM refresh circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 DRAM 리프레쉬 회로의 구성을 래갸적으로 나타내 보인 블럭도, 제3도는 제2도의 DRAM 리프레쉬 회로에 있어서, DRAM 코트롤러의 내부 회로구성도.FIG. 2 is a block diagram showing the configuration of a DRAM refresh circuit according to the present invention. FIG. 3 is an internal circuit diagram of a DRAM coat roller in the DRAM refresh circuit of FIG.

Claims (3)

각종 데이터를 처리하는 한편 시스템 전체를 제어하는 CPU와, 소정의 데이터를 저장하는 DRAM과, 상기 CPU와 DRAM의 커뮤니케이션을 중계해주는 DRAM 콘트롤러를 구비하는 DRAM 리프레쉬회로에 있어서, 상기 DRAM 콘트롤러가 데이터를 임시로 저장하기 위한 복수의 버퍼와, 그 버퍼를 활성화시키기 위한 디코더 또는 선택성 로직 회로와, RAS 및 CAS를 제어하기 위한 RAS/CAS 제어회로와, 상기 CPU의 동작을 대기시키기 위한 타이밍 회로를 구비하여 된 것을 특징으로 하는 DRAM 리프레쉬회로.A DRAM refresh circuit comprising a CPU that processes various data and controls the entire system, a DRAM that stores predetermined data, and a DRAM controller that relays communication between the CPU and the DRAM, wherein the DRAM controller temporarily stores the data. A plurality of buffers for storing data, a decoder or selective logic circuit for activating the buffer, a RAS / CAS control circuit for controlling RAS and CAS, and a timing circuit for waiting for operation of the CPU. DRAM refresh circuit, characterized in that. 제1항에 있어서, 상기 CPU와 DRAM 콘트롤러 사이에는 DRAM의 어드레스를 오직 DRAM 콘트롤러를 통해서만 입/출력할 수 있도록 하는 어드레스 버스가 설치되어 있는 것을 특징으로 하는 DRAM 리프레쉬 회로.The DRAM refresh circuit according to claim 1, wherein an address bus is provided between the CPU and the DRAM controller to allow input / output of DRAM addresses only through the DRAM controller. 제1항에 있어서, 상기 CPU와 DRAM 콘트롤러 사이에는 DRAM 리프레쉬중 일 경우 DRAM 리프레쉬가 완료될 때까지 CPU의 동작을 소정 시간동안 대기시키기 위한 신호 전송을 위해 별도의 대기신호 전송용 버스가 설치되어 있는 것을 특징으로 하는 DRAM 리프레쉬 회로.The method of claim 1, wherein a separate standby signal transmission bus is provided between the CPU and the DRAM controller to transmit a signal for waiting the operation of the CPU for a predetermined time until the DRAM refresh is completed during the DRAM refresh. DRAM refresh circuit, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950004713A 1995-03-08 1995-03-08 DRAM refresh circuit KR960035633A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950004713A KR960035633A (en) 1995-03-08 1995-03-08 DRAM refresh circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950004713A KR960035633A (en) 1995-03-08 1995-03-08 DRAM refresh circuit

Publications (1)

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KR960035633A true KR960035633A (en) 1996-10-24

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Application Number Title Priority Date Filing Date
KR1019950004713A KR960035633A (en) 1995-03-08 1995-03-08 DRAM refresh circuit

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980070330A (en) * 1997-01-02 1998-10-26 윌리엄비.켐플러 Variable standby memory circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980070330A (en) * 1997-01-02 1998-10-26 윌리엄비.켐플러 Variable standby memory circuit

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